JP6356550B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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JP6356550B2
JP6356550B2 JP2014183972A JP2014183972A JP6356550B2 JP 6356550 B2 JP6356550 B2 JP 6356550B2 JP 2014183972 A JP2014183972 A JP 2014183972A JP 2014183972 A JP2014183972 A JP 2014183972A JP 6356550 B2 JP6356550 B2 JP 6356550B2
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insulating substrate
case
semiconductor device
resin
outer edge
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JP2016058563A5 (enExample
JP2016058563A (ja
Inventor
義貴 大坪
義貴 大坪
吉田　博
博 吉田
藤野　純司
純司 藤野
菊池　正雄
正雄 菊池
村井　淳一
淳一 村井
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2014183972A priority Critical patent/JP6356550B2/ja
Priority to US14/717,309 priority patent/US9443778B2/en
Priority to DE102015213495.4A priority patent/DE102015213495B4/de
Priority to CN201510575213.1A priority patent/CN105405815B/zh
Publication of JP2016058563A publication Critical patent/JP2016058563A/ja
Publication of JP2016058563A5 publication Critical patent/JP2016058563A5/ja
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    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
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    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
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    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
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    • H10W72/07552—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in structures or sizes
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2014183972A 2014-09-10 2014-09-10 半導体装置およびその製造方法 Active JP6356550B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014183972A JP6356550B2 (ja) 2014-09-10 2014-09-10 半導体装置およびその製造方法
US14/717,309 US9443778B2 (en) 2014-09-10 2015-05-20 Semiconductor device and manufacturing method thereof
DE102015213495.4A DE102015213495B4 (de) 2014-09-10 2015-07-17 Halbleitervorrichtung und Herstellungsverfahren dafür
CN201510575213.1A CN105405815B (zh) 2014-09-10 2015-09-10 半导体装置及其制造方法

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JP2014183972A JP6356550B2 (ja) 2014-09-10 2014-09-10 半導体装置およびその製造方法

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JP2018108039A Division JP2018133598A (ja) 2018-06-05 2018-06-05 半導体装置およびその製造方法

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JP2016058563A JP2016058563A (ja) 2016-04-21
JP2016058563A5 JP2016058563A5 (enExample) 2017-01-19
JP6356550B2 true JP6356550B2 (ja) 2018-07-11

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US (1) US9443778B2 (enExample)
JP (1) JP6356550B2 (enExample)
CN (1) CN105405815B (enExample)
DE (1) DE102015213495B4 (enExample)

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JP7571434B2 (ja) * 2020-09-15 2024-10-23 富士電機株式会社 半導体装置
EP3979313B1 (de) * 2020-09-30 2022-11-30 SEMIKRON Elektronik GmbH & Co. KG Leistungselektronische einrichtung und leistungshalbleitermodul damit
JP7378379B2 (ja) * 2020-11-02 2023-11-13 三菱電機株式会社 パワー半導体モジュール及び電力変換装置
JP7487695B2 (ja) * 2021-03-26 2024-05-21 三菱電機株式会社 半導体装置
JP7615834B2 (ja) * 2021-03-30 2025-01-17 株式会社三社電機製作所 半導体装置及び放熱器組立体並びに半導体装置及び放熱器の組立方法
JP7580349B2 (ja) * 2021-07-01 2024-11-11 日立Astemo株式会社 パワー半導体装置
JP7749955B2 (ja) * 2021-07-09 2025-10-07 富士電機株式会社 半導体モジュールおよびその製造方法
JP7830911B2 (ja) * 2021-12-02 2026-03-17 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
US20240023285A1 (en) * 2022-07-13 2024-01-18 Quantum-Si Incorporated Flexible metal chip cooling interface
JP7728236B2 (ja) * 2022-09-01 2025-08-22 三菱電機株式会社 ベース板、半導体装置、ベース板の製造方法および半導体装置の製造方法
JP2024075016A (ja) * 2022-11-22 2024-06-03 三菱電機株式会社 半導体装置および半導体装置の製造方法
EP4432345B1 (en) * 2023-03-16 2025-05-07 Hitachi Energy Ltd Insulated metal substrate and method for producing an insulated metal substrate
US12543611B2 (en) * 2023-04-19 2026-02-03 Littelfuse, Inc. Method to connect power terminal to substrate within semiconductor package
JP2025174033A (ja) * 2024-05-16 2025-11-28 三菱電機株式会社 半導体装置の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1201836B (it) * 1986-07-17 1989-02-02 Sgs Microelettronica Spa Dispositivo a semiconduttore montato in un contenitore segmentato altamente flessibile e fornite di dissipatore termico
DE3915707A1 (de) * 1989-05-13 1990-11-22 Asea Brown Boveri Kunststoffgehaeuse und leistungshalbleitermodul mit diesem gehaeuse
JP3225457B2 (ja) 1995-02-28 2001-11-05 株式会社日立製作所 半導体装置
JP3519299B2 (ja) 1999-01-06 2004-04-12 芝府エンジニアリング株式会社 半導体装置
JP3919398B2 (ja) * 1999-10-27 2007-05-23 三菱電機株式会社 半導体モジュール
JP2002315357A (ja) 2001-04-16 2002-10-25 Hitachi Ltd インバータ装置
JP2006100640A (ja) 2004-09-30 2006-04-13 Hitachi Metals Ltd セラミックス回路基板及びこれを用いたパワー半導体モジュール
JP5061717B2 (ja) * 2007-05-18 2012-10-31 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
JP5328645B2 (ja) * 2007-05-18 2013-10-30 株式会社三社電機製作所 電力用半導体モジュール
JP2009130168A (ja) * 2007-11-26 2009-06-11 Nissan Motor Co Ltd 半導体装置および半導体装置の絶縁方法
JP5285347B2 (ja) * 2008-07-30 2013-09-11 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置
US8237260B2 (en) * 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate
DE102009026558B3 (de) * 2009-05-28 2010-12-02 Infineon Technologies Ag Leistungshalbleitermodul mit beweglich gelagerten Schaltungsträgern und Verfahren zur Herstellung eines solchen Leistungshalbleitermoduls
JP5362624B2 (ja) * 2010-03-09 2013-12-11 株式会社三社電機製作所 パワー半導体モジュール
JP5602095B2 (ja) * 2011-06-09 2014-10-08 三菱電機株式会社 半導体装置
US9117795B2 (en) * 2012-02-09 2015-08-25 Fuji Electric Co., Ltd. Semiconductor device
JP2013229369A (ja) * 2012-04-24 2013-11-07 Denso Corp モールドパッケージ
CN104170079B (zh) * 2012-09-13 2018-06-29 富士电机株式会社 半导体装置、针对半导体装置的安装散热部件的方法和半导体装置的制造方法

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