DE102015213495B4 - Halbleitervorrichtung und Herstellungsverfahren dafür - Google Patents

Halbleitervorrichtung und Herstellungsverfahren dafür Download PDF

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Publication number
DE102015213495B4
DE102015213495B4 DE102015213495.4A DE102015213495A DE102015213495B4 DE 102015213495 B4 DE102015213495 B4 DE 102015213495B4 DE 102015213495 A DE102015213495 A DE 102015213495A DE 102015213495 B4 DE102015213495 B4 DE 102015213495B4
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insulating substrate
housing
semiconductor device
thickness
substrate
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English (en)
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DE102015213495A1 (de
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Yoshitaka Otsubo
Hiroshi Yoshida
Junji Fujino
Masao Kikuchi
Junichi Murai
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858Bonding techniques
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    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6775385B2 (ja) * 2015-11-10 2020-10-28 昭和電工株式会社 パワーモジュール用ベース
KR101922874B1 (ko) * 2015-12-21 2018-11-28 삼성전기 주식회사 전자 부품 패키지
JP6409846B2 (ja) * 2016-10-18 2018-10-24 トヨタ自動車株式会社 半導体装置
US9929066B1 (en) * 2016-12-13 2018-03-27 Ixys Corporation Power semiconductor device module baseplate having peripheral heels
CN114975302A (zh) * 2016-12-27 2022-08-30 新唐科技日本株式会社 半导体装置
JP6625044B2 (ja) * 2016-12-28 2019-12-25 三菱電機株式会社 半導体装置およびその製造方法
DE112017003669B4 (de) * 2017-02-13 2022-08-25 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
JP6946698B2 (ja) * 2017-03-31 2021-10-06 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6766744B2 (ja) * 2017-05-10 2020-10-14 株式会社豊田自動織機 半導体モジュール
JP2018195717A (ja) * 2017-05-17 2018-12-06 富士電機株式会社 半導体モジュール、半導体モジュールのベース板および半導体装置の製造方法
JP7034613B2 (ja) * 2017-06-29 2022-03-14 太陽誘電株式会社 セラミック電子部品及びその製造方法、並びに電子部品実装基板
DE112018003419T5 (de) 2017-07-03 2020-08-20 Mitsubishi Electric Corporation Halbleiterbauelement
JP7013728B2 (ja) * 2017-08-25 2022-02-01 富士電機株式会社 半導体装置
JP6768612B2 (ja) * 2017-09-06 2020-10-14 三菱電機株式会社 半導体装置
JP6852649B2 (ja) * 2017-10-24 2021-03-31 株式会社オートネットワーク技術研究所 回路構成体及び回路構成体の製造方法
JP6827402B2 (ja) 2017-11-17 2021-02-10 三菱電機株式会社 半導体装置
KR102008278B1 (ko) * 2017-12-07 2019-08-07 현대오트론 주식회사 파워칩 통합 모듈과 이의 제조 방법 및 양면 냉각형 파워 모듈 패키지
WO2019116910A1 (ja) * 2017-12-13 2019-06-20 三菱電機株式会社 半導体装置および半導体装置の製造方法
EP3506344A1 (de) * 2017-12-29 2019-07-03 Siemens Aktiengesellschaft Halbleiterbaugruppe
JP2019129201A (ja) * 2018-01-23 2019-08-01 三菱電機株式会社 半導体装置、および、半導体装置の製造方法
JP7056366B2 (ja) * 2018-05-16 2022-04-19 富士電機株式会社 半導体モジュール及びそれを用いた半導体装置
JP7038645B2 (ja) * 2018-12-06 2022-03-18 三菱電機株式会社 半導体装置および半導体装置の製造方法
US11107962B2 (en) * 2018-12-18 2021-08-31 Soulnano Limited UV LED array with power interconnect and heat sink
KR102787083B1 (ko) * 2019-01-10 2025-03-26 울프스피드 인코포레이티드 전력 장치를 병렬화하기 위한 낮은 인덕턴스와 빠른 스위칭을 갖는 고전력 다층 모듈
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CN115315805B (zh) * 2020-03-26 2025-01-10 三菱电机株式会社 半导体装置及其制造方法
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JP7571434B2 (ja) * 2020-09-15 2024-10-23 富士電機株式会社 半導体装置
EP3979313B1 (de) * 2020-09-30 2022-11-30 SEMIKRON Elektronik GmbH & Co. KG Leistungselektronische einrichtung und leistungshalbleitermodul damit
JP7378379B2 (ja) * 2020-11-02 2023-11-13 三菱電機株式会社 パワー半導体モジュール及び電力変換装置
JP7487695B2 (ja) * 2021-03-26 2024-05-21 三菱電機株式会社 半導体装置
JP7615834B2 (ja) * 2021-03-30 2025-01-17 株式会社三社電機製作所 半導体装置及び放熱器組立体並びに半導体装置及び放熱器の組立方法
JP7749955B2 (ja) * 2021-07-09 2025-10-07 富士電機株式会社 半導体モジュールおよびその製造方法
JP2023082484A (ja) * 2021-12-02 2023-06-14 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
US20240023285A1 (en) * 2022-07-13 2024-01-18 Quantum-Si Incorporated Flexible metal chip cooling interface
JP7728236B2 (ja) * 2022-09-01 2025-08-22 三菱電機株式会社 ベース板、半導体装置、ベース板の製造方法および半導体装置の製造方法
EP4432345B1 (en) * 2023-03-16 2025-05-07 Hitachi Energy Ltd Insulated metal substrate and method for producing an insulated metal substrate
US20240355718A1 (en) * 2023-04-19 2024-10-24 Littelfuse, Inc. Method to connect power terminal to substrate within semiconductor package
JP2025174033A (ja) * 2024-05-16 2025-11-28 三菱電機株式会社 半導体装置の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4887149A (en) * 1986-07-17 1989-12-12 Sgs Microelectronica S.P.A. Semiconductor device mounted in a highly flexible, segmented package, provided with heat sink
DE3915707A1 (de) * 1989-05-13 1990-11-22 Asea Brown Boveri Kunststoffgehaeuse und leistungshalbleitermodul mit diesem gehaeuse
US20030094682A1 (en) * 1999-10-27 2003-05-22 Toshiaki Shinohara Semiconductor module and insulating substrate thereof
DE102008023711A1 (de) * 2007-05-18 2008-11-20 Fuji Electric Device Technology Co., Ltd. Halbleitermodul und Verfahren zur Herstellung eines Halbleitermoduls
JP2011187711A (ja) * 2010-03-09 2011-09-22 Sansha Electric Mfg Co Ltd パワー半導体モジュール

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3225457B2 (ja) 1995-02-28 2001-11-05 株式会社日立製作所 半導体装置
JP3519299B2 (ja) 1999-01-06 2004-04-12 芝府エンジニアリング株式会社 半導体装置
JP2002315357A (ja) 2001-04-16 2002-10-25 Hitachi Ltd インバータ装置
JP2006100640A (ja) 2004-09-30 2006-04-13 Hitachi Metals Ltd セラミックス回路基板及びこれを用いたパワー半導体モジュール
WO2008142760A1 (ja) * 2007-05-18 2008-11-27 Sansha Electric Manufacturing Co., Ltd. 電力用半導体モジュール
JP2009130168A (ja) * 2007-11-26 2009-06-11 Nissan Motor Co Ltd 半導体装置および半導体装置の絶縁方法
JP5285347B2 (ja) * 2008-07-30 2013-09-11 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置
US8237260B2 (en) * 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate
DE102009026558B3 (de) * 2009-05-28 2010-12-02 Infineon Technologies Ag Leistungshalbleitermodul mit beweglich gelagerten Schaltungsträgern und Verfahren zur Herstellung eines solchen Leistungshalbleitermoduls
JP5602095B2 (ja) * 2011-06-09 2014-10-08 三菱電機株式会社 半導体装置
JP5928485B2 (ja) * 2012-02-09 2016-06-15 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2013229369A (ja) * 2012-04-24 2013-11-07 Denso Corp モールドパッケージ
WO2014041936A1 (ja) * 2012-09-13 2014-03-20 富士電機株式会社 半導体装置、半導体装置に対する放熱部材の取り付け方法及び半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4887149A (en) * 1986-07-17 1989-12-12 Sgs Microelectronica S.P.A. Semiconductor device mounted in a highly flexible, segmented package, provided with heat sink
DE3915707A1 (de) * 1989-05-13 1990-11-22 Asea Brown Boveri Kunststoffgehaeuse und leistungshalbleitermodul mit diesem gehaeuse
US20030094682A1 (en) * 1999-10-27 2003-05-22 Toshiaki Shinohara Semiconductor module and insulating substrate thereof
DE102008023711A1 (de) * 2007-05-18 2008-11-20 Fuji Electric Device Technology Co., Ltd. Halbleitermodul und Verfahren zur Herstellung eines Halbleitermoduls
JP2011187711A (ja) * 2010-03-09 2011-09-22 Sansha Electric Mfg Co Ltd パワー半導体モジュール

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