WO2008142760A1 - 電力用半導体モジュール - Google Patents

電力用半導体モジュール Download PDF

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Publication number
WO2008142760A1
WO2008142760A1 PCT/JP2007/060252 JP2007060252W WO2008142760A1 WO 2008142760 A1 WO2008142760 A1 WO 2008142760A1 JP 2007060252 W JP2007060252 W JP 2007060252W WO 2008142760 A1 WO2008142760 A1 WO 2008142760A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
face
pattern
substratum
ceramic
Prior art date
Application number
PCT/JP2007/060252
Other languages
English (en)
French (fr)
Inventor
Osamu Soda
Yuji Ohnishi
Kazunori Inami
Toshio Uchida
Original Assignee
Sansha Electric Manufacturing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sansha Electric Manufacturing Co., Ltd. filed Critical Sansha Electric Manufacturing Co., Ltd.
Priority to EP07743687.1A priority Critical patent/EP2149903B1/en
Priority to KR1020097014565A priority patent/KR101064024B1/ko
Priority to PCT/JP2007/060252 priority patent/WO2008142760A1/ja
Priority to US12/451,157 priority patent/US7994635B2/en
Priority to JP2009515029A priority patent/JP5328645B2/ja
Priority to CN2007800512169A priority patent/CN101675520B/zh
Publication of WO2008142760A1 publication Critical patent/WO2008142760A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Inverter Devices (AREA)

Abstract

　セラミック基板の反りを抑制し、かつ、放熱効率が低下するのを防止する。 　放熱器が取り付けられるモジュール筐体と、モジュール筐体によって保持される共通ユニットからなる。共通ユニットは、半導体素子が配設された回路面及び放熱器に当接する放熱面を有するセラミック基板と、放熱面を露出させるとともに回路面を耐熱性樹脂により封止して形成されるパッケージとを有する。回路面及び放熱面は、それぞれセラミック基板に形成された金属層５１からなり、放熱面を形成している金属層５１は、その周縁部に沿って延びる溝部からなる緩衝パターン５１２が形成されることにより、緩衝パターン５１２よりも内側に形成された放熱パターン５１０と、緩衝パターン５１２よりも外側に形成された外周パターン５１１とを有する。この様な構成により、セラミック基板の反りを抑制し、かつ、放熱効率が低下するのを防止することができる。
PCT/JP2007/060252 2007-05-18 2007-05-18 電力用半導体モジュール WO2008142760A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP07743687.1A EP2149903B1 (en) 2007-05-18 2007-05-18 Semiconductor module for electric power
KR1020097014565A KR101064024B1 (ko) 2007-05-18 2007-05-18 전력용 반도체모듈
PCT/JP2007/060252 WO2008142760A1 (ja) 2007-05-18 2007-05-18 電力用半導体モジュール
US12/451,157 US7994635B2 (en) 2007-05-18 2007-05-18 Power semiconductor module
JP2009515029A JP5328645B2 (ja) 2007-05-18 2007-05-18 電力用半導体モジュール
CN2007800512169A CN101675520B (zh) 2007-05-18 2007-05-18 电力用半导体模块

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/060252 WO2008142760A1 (ja) 2007-05-18 2007-05-18 電力用半導体モジュール

Publications (1)

Publication Number Publication Date
WO2008142760A1 true WO2008142760A1 (ja) 2008-11-27

Family

ID=40031487

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/060252 WO2008142760A1 (ja) 2007-05-18 2007-05-18 電力用半導体モジュール

Country Status (6)

Country Link
US (1) US7994635B2 (ja)
EP (1) EP2149903B1 (ja)
JP (1) JP5328645B2 (ja)
KR (1) KR101064024B1 (ja)
CN (1) CN101675520B (ja)
WO (1) WO2008142760A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013229369A (ja) * 2012-04-24 2013-11-07 Denso Corp モールドパッケージ
JP2016058563A (ja) * 2014-09-10 2016-04-21 三菱電機株式会社 半導体装置およびその製造方法
US9917031B2 (en) 2013-09-30 2018-03-13 Fuji Electric Co., Ltd. Semiconductor device, and method for assembling semiconductor device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5481104B2 (ja) * 2009-06-11 2014-04-23 ルネサスエレクトロニクス株式会社 半導体装置
JP5233854B2 (ja) 2009-06-12 2013-07-10 日本電産株式会社 軸受装置、スピンドルモータ、及びディスク駆動装置
JP5019082B1 (ja) * 2011-03-25 2012-09-05 栗田工業株式会社 液体加熱方法及び液体加熱装置並びに加熱液体供給装置
JP5528641B1 (ja) * 2012-10-03 2014-06-25 新電元工業株式会社 電子機器
KR20150074649A (ko) * 2013-12-24 2015-07-02 삼성전기주식회사 반도체 패키지 및 그 제조 방법
JP6578795B2 (ja) * 2015-08-04 2019-09-25 富士電機株式会社 半導体装置及び半導体装置の製造方法
CN105811787A (zh) * 2016-05-18 2016-07-27 珠海格力电器股份有限公司 一种全密封换流组件
CN107369741A (zh) * 2017-07-13 2017-11-21 东莞市凯昶德电子科技股份有限公司 带一体式金属围坝的led支架模组及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09237869A (ja) 1996-02-29 1997-09-09 Hitachi Ltd 樹脂封止型パワーモジュール装置及びその製造方法
JPH1084059A (ja) * 1996-09-09 1998-03-31 Toshiba Corp 窒化けい素回路基板
JP2001036005A (ja) * 1999-07-23 2001-02-09 Fuji Electric Co Ltd 半導体装置
JP2006140401A (ja) * 2004-11-15 2006-06-01 Toshiba Corp 半導体集積回路装置
JP2006332291A (ja) * 2005-05-25 2006-12-07 Keihin Corp パワードライブユニット

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3241508A1 (de) * 1982-11-10 1984-05-10 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungstransistor-modul
JPH0777246B2 (ja) * 1989-10-31 1995-08-16 株式会社住友金属セラミックス セラミックス回路基板
US5760333A (en) * 1992-08-06 1998-06-02 Pfu Limited Heat-generating element cooling device
JPH07161925A (ja) * 1993-12-09 1995-06-23 Mitsubishi Electric Corp パワーモジュール
JP3316714B2 (ja) * 1994-05-31 2002-08-19 三菱電機株式会社 半導体装置
JP3919398B2 (ja) * 1999-10-27 2007-05-23 三菱電機株式会社 半導体モジュール
JP2002344094A (ja) * 2001-05-15 2002-11-29 Dowa Mining Co Ltd パワーモジュール用回路基板
JP3910383B2 (ja) * 2001-07-17 2007-04-25 株式会社日立製作所 パワーモジュールおよびインバータ
JP2005064291A (ja) * 2003-08-14 2005-03-10 Nissan Motor Co Ltd 絶縁シートおよびこの絶縁シートを用いた半導体装置組立体
JP4821537B2 (ja) * 2006-09-26 2011-11-24 株式会社デンソー 電子制御装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09237869A (ja) 1996-02-29 1997-09-09 Hitachi Ltd 樹脂封止型パワーモジュール装置及びその製造方法
JPH1084059A (ja) * 1996-09-09 1998-03-31 Toshiba Corp 窒化けい素回路基板
JP2001036005A (ja) * 1999-07-23 2001-02-09 Fuji Electric Co Ltd 半導体装置
JP2006140401A (ja) * 2004-11-15 2006-06-01 Toshiba Corp 半導体集積回路装置
JP2006332291A (ja) * 2005-05-25 2006-12-07 Keihin Corp パワードライブユニット

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2149903A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013229369A (ja) * 2012-04-24 2013-11-07 Denso Corp モールドパッケージ
US9917031B2 (en) 2013-09-30 2018-03-13 Fuji Electric Co., Ltd. Semiconductor device, and method for assembling semiconductor device
JP2016058563A (ja) * 2014-09-10 2016-04-21 三菱電機株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
CN101675520B (zh) 2011-07-20
JPWO2008142760A1 (ja) 2010-08-05
EP2149903A1 (en) 2010-02-03
KR20090089468A (ko) 2009-08-21
EP2149903A4 (en) 2011-11-09
KR101064024B1 (ko) 2011-09-08
US20100127387A1 (en) 2010-05-27
EP2149903B1 (en) 2019-10-30
CN101675520A (zh) 2010-03-17
JP5328645B2 (ja) 2013-10-30
US7994635B2 (en) 2011-08-09

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