WO2008142758A1 - 電力用半導体モジュール - Google Patents

電力用半導体モジュール Download PDF

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Publication number
WO2008142758A1
WO2008142758A1 PCT/JP2007/060250 JP2007060250W WO2008142758A1 WO 2008142758 A1 WO2008142758 A1 WO 2008142758A1 JP 2007060250 W JP2007060250 W JP 2007060250W WO 2008142758 A1 WO2008142758 A1 WO 2008142758A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat
power semiconductor
heat dissipater
semiconductor module
module
Prior art date
Application number
PCT/JP2007/060250
Other languages
English (en)
French (fr)
Inventor
Osamu Soda
Yuji Ohnishi
Kazunori Inami
Toshio Uchida
Original Assignee
Sansha Electric Manufacturing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sansha Electric Manufacturing Co., Ltd. filed Critical Sansha Electric Manufacturing Co., Ltd.
Priority to PCT/JP2007/060250 priority Critical patent/WO2008142758A1/ja
Publication of WO2008142758A1 publication Critical patent/WO2008142758A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

【課題】　 小型軽量の電力用半導体モジュール内により多くの半導体素子を内蔵する。 【解決手段】　放熱器取付面を有するモジュール筐体２と、モジュール筐体２によって保持される共通ユニット３ａ～３ｃからなる。共通ユニット３ａ～３ｃは、半導体素子５４が配設された回路面及びその反対側の放熱面を有するセラミック基板５０と、上記放熱面を露出させ回路面を耐熱性樹脂によって封止するパッケージ３５とを有する。モジュール筐体２は、放熱器取付面上において上記放熱面を露出させる開口部２３ａ～２３ｃと、放熱器９を取り付けるための放熱器取付部２４と、共通ユニット３ａ～３ｃを放熱器９との間に挟み込むユニット当接部２７，２８とを有する。この様な構成により、小型軽量の電力用半導体モジュール内に多くの半導体素子を内蔵することができる。
PCT/JP2007/060250 2007-05-18 2007-05-18 電力用半導体モジュール WO2008142758A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/060250 WO2008142758A1 (ja) 2007-05-18 2007-05-18 電力用半導体モジュール

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/060250 WO2008142758A1 (ja) 2007-05-18 2007-05-18 電力用半導体モジュール

Publications (1)

Publication Number Publication Date
WO2008142758A1 true WO2008142758A1 (ja) 2008-11-27

Family

ID=40031485

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/060250 WO2008142758A1 (ja) 2007-05-18 2007-05-18 電力用半導体モジュール

Country Status (1)

Country Link
WO (1) WO2008142758A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013146212A1 (ja) * 2012-03-28 2013-10-03 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP2013225555A (ja) * 2012-04-20 2013-10-31 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
CN104218032A (zh) * 2013-06-04 2014-12-17 富士电机株式会社 半导体装置
US9312192B2 (en) 2012-03-28 2016-04-12 Fuji Electric Co., Ltd. Semiconductor device
US9385061B2 (en) 2012-03-28 2016-07-05 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN109417068A (zh) * 2017-01-17 2019-03-01 富士电机株式会社 半导体装置
CN109906509A (zh) * 2017-10-10 2019-06-18 新电元工业株式会社 模块以及电力转换装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03178156A (ja) * 1989-12-06 1991-08-02 Mitsubishi Electric Corp 半導体装置
JPH1084078A (ja) * 1996-09-06 1998-03-31 Hitachi Ltd パワー半導体装置
JPH10256411A (ja) * 1997-03-12 1998-09-25 Sansha Electric Mfg Co Ltd 電力用半導体モジュール
JP2001036005A (ja) * 1999-07-23 2001-02-09 Fuji Electric Co Ltd 半導体装置
JP2002203942A (ja) * 2000-12-28 2002-07-19 Fuji Electric Co Ltd パワー半導体モジュール
JP2006332291A (ja) * 2005-05-25 2006-12-07 Keihin Corp パワードライブユニット

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03178156A (ja) * 1989-12-06 1991-08-02 Mitsubishi Electric Corp 半導体装置
JPH1084078A (ja) * 1996-09-06 1998-03-31 Hitachi Ltd パワー半導体装置
JPH10256411A (ja) * 1997-03-12 1998-09-25 Sansha Electric Mfg Co Ltd 電力用半導体モジュール
JP2001036005A (ja) * 1999-07-23 2001-02-09 Fuji Electric Co Ltd 半導体装置
JP2002203942A (ja) * 2000-12-28 2002-07-19 Fuji Electric Co Ltd パワー半導体モジュール
JP2006332291A (ja) * 2005-05-25 2006-12-07 Keihin Corp パワードライブユニット

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2833405A4 (en) * 2012-03-28 2016-01-13 Fuji Electric Co Ltd SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF
US9385061B2 (en) 2012-03-28 2016-07-05 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN104170086A (zh) * 2012-03-28 2014-11-26 富士电机株式会社 半导体装置及半导体装置的制造方法
US9312192B2 (en) 2012-03-28 2016-04-12 Fuji Electric Co., Ltd. Semiconductor device
JPWO2013146212A1 (ja) * 2012-03-28 2015-12-10 富士電機株式会社 半導体装置及び半導体装置の製造方法
US9379083B2 (en) 2012-03-28 2016-06-28 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2013146212A1 (ja) * 2012-03-28 2013-10-03 富士電機株式会社 半導体装置及び半導体装置の製造方法
US8637971B2 (en) 2012-04-20 2014-01-28 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device
JP2013225555A (ja) * 2012-04-20 2013-10-31 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
CN104218032A (zh) * 2013-06-04 2014-12-17 富士电机株式会社 半导体装置
US9504154B2 (en) 2013-06-04 2016-11-22 Fuji Electric Co., Ltd. Semiconductor device
CN109417068A (zh) * 2017-01-17 2019-03-01 富士电机株式会社 半导体装置
CN109417068B (zh) * 2017-01-17 2022-05-06 富士电机株式会社 半导体装置
CN109906509A (zh) * 2017-10-10 2019-06-18 新电元工业株式会社 模块以及电力转换装置
CN109906509B (zh) * 2017-10-10 2022-10-28 新电元工业株式会社 模块以及电力转换装置

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