JP6351874B2 - 炭化珪素エピタキシャル基板および炭化珪素半導体装置 - Google Patents
炭化珪素エピタキシャル基板および炭化珪素半導体装置 Download PDFInfo
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- JP6351874B2 JP6351874B2 JP2017554137A JP2017554137A JP6351874B2 JP 6351874 B2 JP6351874 B2 JP 6351874B2 JP 2017554137 A JP2017554137 A JP 2017554137A JP 2017554137 A JP2017554137 A JP 2017554137A JP 6351874 B2 JP6351874 B2 JP 6351874B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 341
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 341
- 239000000758 substrate Substances 0.000 title claims description 131
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 239000012535 impurity Substances 0.000 claims description 121
- 239000013078 crystal Substances 0.000 claims description 90
- 230000007423 decrease Effects 0.000 claims description 10
- 230000009467 reduction Effects 0.000 claims description 8
- 230000003247 decreasing effect Effects 0.000 claims description 7
- 230000006866 deterioration Effects 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000008859 change Effects 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005424 photoluminescence Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
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- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
図1および図2を参照して、本実施の形態のpinダイオード100(炭化珪素半導体装置)は、炭化珪素エピタキシャル基板51を用いて製造されたものである。言い換えれば、pinダイオード100は炭化珪素エピタキシャル基板51を有している。炭化珪素エピタキシャル基板51は、n型(一の導電型)の炭化珪素単結晶基板10と、n型の第1の炭化珪素層21と、n型の第2の炭化珪素層22と、n型の第3の炭化珪素層23(活性層)とを有している。第1の炭化珪素層21は炭化珪素単結晶基板10上に設けられている。第1の炭化珪素層21は炭化珪素単結晶基板10上に直接設けられていてよい。第2の炭化珪素層22は第1の炭化珪素層21上に設けられている。第2の炭化珪素層22は第1の炭化珪素層21上に直接設けられていてよい。第3の炭化珪素層23は第2の炭化珪素層22上に設けられている。第3の炭化珪素層23は第2の炭化珪素層22上に直接設けられていてよい。第1の炭化珪素層21、第2の炭化珪素層22および第3の炭化珪素層23は、炭化珪素単結晶基板10上のエピタキシャル成長によって形成されたエピタキシャル層である。エピタキシャル成長はCVD法によって行われ得る。
図8を参照して、本実施の形態の炭化珪素エピタキシャル基板52はバッファ層29を有している。バッファ層29は、第1の面S1と、第1の面S1と反対の第2の面S2とを有している。バッファ層29は炭化珪素から作られている。バッファ層29は、第2の炭化珪素層22上でのエピタキシャル成長によって形成され得る。
図9を参照して、本実施の形態の炭化珪素エピタキシャル基板53は、実施の形態2(図8)における炭化珪素エピタキシャル基板52のバッファ層29に代わり、バッファ層29vを有している。バッファ層29と同様、バッファ層29vは、第1の面S1と、第1の面S1と反対の第2の面S2とを有している。バッファ層29vは炭化珪素から作られている。バッファ層29vは、第2の炭化珪素層22上でのエピタキシャル成長によって形成され得る。
(実施例1)
炭化珪素単結晶基板10(図2)として、オフ角4度、直径75mm(3インチ)、結晶多形4H、導電型n型、不純物濃度5×1018cm-3を有する炭化珪素基板が用意された。炭化珪素基板の表面は、あらかじめ、機械研磨および化学機械研磨により鏡面に加工されていた。表面における基底面転位密度は500個cm-2であった。
実施例1と同様に準備された炭化珪素単結晶基板10(図8)上に、エピタキシャル成長層が形成された。具体的には、まず、不純物濃度が5×1018cm-3となるように窒素ガス流量を調整された状態で成長が開始された。成長が始まると同時に窒素ガス流量を一定の割合で減少させることで、炭化珪素単結晶基板10上に、不純物濃度が5×1018cm-3から5×1017cm-3まで線形に減少するようなバッファ層が200nmの厚みで形成された。続いて、不純物濃度が5×1017cm-3の第1の炭化珪素層21が形成された。次に、不純物濃度が5×1017cm-3から1×1019cm-3まで線形に増加するようなバッファ層を500nmの厚みで成長させた後に、不純物濃度が1×1019cm-3の第2の炭化珪素層22が500nmの厚みで形成された。さらに、不純物濃度が5×1019cm-3から3×1016cm-3まで線形に減少するようなバッファ層29が10μmの厚みで形成された。バッファ層29上に不純物濃度が3×1016cm-3の第3の炭化珪素層23が10μmの厚みで形成された。
実施例1と同様に準備された炭化珪素単結晶基板10(図3)上に、エピタキシャル成長層が形成された。具体的には、まず、不純物濃度5×1017cm-3の第1の炭化珪素層21が500nmの厚みで形成された。続いて、窒素ガス流量を調整することで、不純物濃度が3×1016cm-3の第3の炭化珪素層23が10μmの厚みで形成された。以上により、炭化珪素エピタキシャル基板59を得た。その全体のフォトルミネッセンスイメージを取得したところ、第3の炭化珪素層23中の基底面転位密度は100個cm-2であった。この炭化珪素エピタキシャル基板59を用いて、バイポーラ素子であるpinダイオードが作製された。
Claims (10)
- 第1の不純物濃度を有する一の導電型の炭化珪素単結晶基板(10)と、
前記炭化珪素単結晶基板(10)上に設けられ、前記第1の不純物濃度よりも低い第2の不純物濃度を有する前記一の導電型の第1の炭化珪素層(21)と、
前記第1の炭化珪素層(21)上に設けられ、前記第1の不純物濃度よりも高い第3の不純物濃度を有する前記一の導電型の第2の炭化珪素層(22)と、
前記第2の炭化珪素層(22)上に設けられ、前記第2の不純物濃度よりも低い第4の不純物濃度を有する前記一の導電型の第3の炭化珪素層(23)と、
を備える、炭化珪素エピタキシャル基板(51〜53)。 - 前記第3の不純物濃度は2×1019cm-3以下である、請求項1に記載の炭化珪素エピタキシャル基板(51〜53)。
- 前記第3の不純物濃度は5×1018cm-3以上である、請求項1または2に記載の炭化珪素エピタキシャル基板(51〜53)。
- 前記第2の不純物濃度は5×1016cm-3以上、1×1019cm-3以下である、請求項1から3のいずれか1項に記載の炭化珪素エピタキシャル基板(51〜53)。
- 前記第4の不純物濃度は1×1014cm-3以上、5×1016cm-3以下である、請求項1から4のいずれか1項に記載の炭化珪素エピタキシャル基板(51〜53)。
- 第1の面(S1)と前記第1の面(S1)と反対の第2の面(S2)とを有し、炭化珪素から作られたバッファ層(29,29v)をさらに備え、
前記第1の面(S1)は前記第2の炭化珪素層(22)に面しており、前記第2の面(S2)は前記第3の炭化珪素層(23)に面しており、前記バッファ層(29,29v)は、前記第1の面(S1)から前記第2の面(S2)へ向かって連続的に減少する不純物濃度プロファイルを有している、請求項1から5のいずれか1項に記載の炭化珪素エピタキシャル基板(51〜53)。 - 第1の面(S1)と前記第1の面(S1)と反対の第2の面(S2)とを有し、炭化珪素から作られたバッファ層(29v)をさらに備え、
前記第1の面(S1)は前記第2の炭化珪素層(22)に面しており、前記第2の面(S2)は前記第3の炭化珪素層(23)に面しており、
前記バッファ層(29v)の前記第1の面(S1)と前記第2の面(S2)との間の地点を中間地点とすると、前記バッファ層(29v)は、不純物濃度が、前記第1の面(S1)から前記中間地点へ向かって連続的に第1の減少率で減少し、かつ前記中間地点から前記第2の面(S2)へ向かって第2の減少率で連続的に減少する不純物濃度プロファイルを有しており、
前記第1の減少率は前記第2の減少率よりも小さい、
請求項1から5のいずれか1項に記載の炭化珪素エピタキシャル基板(53)。 - 第1の不純物濃度を有する一の導電型の炭化珪素単結晶基板(10)と、
前記炭化珪素単結晶基板(10)上に設けられ、前記第1の不純物濃度よりも低い第2の不純物濃度を有する前記一の導電型の第1の炭化珪素層(21)と、
前記第1の炭化珪素層(21)上に設けられ、前記第1の不純物濃度よりも高い第3の不純物濃度を有する前記一の導電型の第2の炭化珪素層(22)と、
前記第2の炭化珪素層(22)上に設けられ、前記第2の不純物濃度よりも低い第4の不純物濃度を有する前記一の導電型の第3の炭化珪素層(23)と、
前記第3の炭化珪素層(23)上に設けられた、前記一の導電型と異なる導電型の第4の炭化珪素層(124,224,324)と、
を備える、炭化珪素半導体装置(100,200,300)。 - 前記炭化珪素単結晶基板(10)に電気的に接続された第1の電極(101,201,301)と、
前記第4の炭化珪素層(124,224,324)に電気的に接続された第2の電極(102,202,302)と、
をさらに備える、請求項8に記載の炭化珪素半導体装置(100,200,300)。 - 前記第1の電極(101,201,301)は前記炭化珪素単結晶基板(10)にオーミック接続されており、前記第2の電極(102,202,302)は前記第4の炭化珪素層(124,224,324)にオーミック接続されている、請求項9に記載の炭化珪素半導体装置(100,200,300)。
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