JP6280362B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6280362B2 JP6280362B2 JP2013264794A JP2013264794A JP6280362B2 JP 6280362 B2 JP6280362 B2 JP 6280362B2 JP 2013264794 A JP2013264794 A JP 2013264794A JP 2013264794 A JP2013264794 A JP 2013264794A JP 6280362 B2 JP6280362 B2 JP 6280362B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- circuit
- voltage
- oxide
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 133
- 239000010408 film Substances 0.000 description 381
- 239000010410 layer Substances 0.000 description 262
- 238000003860 storage Methods 0.000 description 157
- 230000015654 memory Effects 0.000 description 111
- 230000006870 function Effects 0.000 description 92
- 239000003990 capacitor Substances 0.000 description 89
- 230000001186 cumulative effect Effects 0.000 description 89
- 239000001301 oxygen Substances 0.000 description 61
- 229910052760 oxygen Inorganic materials 0.000 description 61
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 60
- 238000000034 method Methods 0.000 description 57
- 239000013078 crystal Substances 0.000 description 51
- 239000011701 zinc Substances 0.000 description 45
- 238000006243 chemical reaction Methods 0.000 description 43
- 238000010586 diagram Methods 0.000 description 43
- 125000004429 atom Chemical group 0.000 description 42
- 239000012535 impurity Substances 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 37
- 239000000758 substrate Substances 0.000 description 36
- 239000011229 interlayer Substances 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 230000002829 reductive effect Effects 0.000 description 31
- 229910052710 silicon Inorganic materials 0.000 description 31
- 239000010703 silicon Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 29
- 230000004888 barrier function Effects 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000001257 hydrogen Substances 0.000 description 20
- 229910052739 hydrogen Inorganic materials 0.000 description 20
- 239000004020 conductor Substances 0.000 description 16
- 238000005070 sampling Methods 0.000 description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 15
- 239000002184 metal Substances 0.000 description 13
- 230000010355 oscillation Effects 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 238000001514 detection method Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 238000004364 calculation method Methods 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 230000008859 change Effects 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- 238000012937 correction Methods 0.000 description 8
- 230000009977 dual effect Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000010248 power generation Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 229910001868 water Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000014509 gene expression Effects 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- 229910052684 Cerium Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 238000004378 air conditioning Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000002003 electron diffraction Methods 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- 229910001416 lithium ion Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- -1 machines Substances 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 241000156302 Porcine hemagglutinating encephalomyelitis virus Species 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 2
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- FIPWRIJSWJWJAI-UHFFFAOYSA-N Butyl carbitol 6-propylpiperonyl ether Chemical compound C1=C(CCC)C(COCCOCCOCCCC)=CC2=C1OCO2 FIPWRIJSWJWJAI-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229910004612 CdTe—CdS Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- MBMLMWLHJBBADN-UHFFFAOYSA-N Ferrous sulfide Chemical compound [Fe]=S MBMLMWLHJBBADN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 235000015842 Hesperis Nutrition 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 235000012633 Iberis amara Nutrition 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 241001538551 Sibon Species 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- ZRXYMHTYEQQBLN-UHFFFAOYSA-N [Br].[Zn] Chemical compound [Br].[Zn] ZRXYMHTYEQQBLN-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000000502 dialysis Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004402 ultra-violet photoelectron spectroscopy Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/36—Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
- G01R31/382—Arrangements for monitoring battery or accumulator variables, e.g. SoC
- G01R31/3828—Arrangements for monitoring battery or accumulator variables, e.g. SoC using current integration
- G01R31/3832—Arrangements for monitoring battery or accumulator variables, e.g. SoC using current integration without measurement of battery voltage
- G01R31/3833—Arrangements for monitoring battery or accumulator variables, e.g. SoC using current integration without measurement of battery voltage using analog integrators, e.g. coulomb-meters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/36—Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
- G01R31/364—Battery terminal connectors with integrated measuring arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/36—Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
- G01R31/382—Arrangements for monitoring battery or accumulator variables, e.g. SoC
- G01R31/3828—Arrangements for monitoring battery or accumulator variables, e.g. SoC using current integration
- G01R31/3832—Arrangements for monitoring battery or accumulator variables, e.g. SoC using current integration without measurement of battery voltage
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
- G01R1/203—Resistors used for electric measuring, e.g. decade resistors standards, resistors for comparators, series resistors, shunts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Thin Film Transistor (AREA)
- Power Sources (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013264794A JP6280362B2 (ja) | 2012-12-28 | 2013-12-24 | 半導体装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012289080 | 2012-12-28 | ||
| JP2012289080 | 2012-12-28 | ||
| JP2012289094 | 2012-12-28 | ||
| JP2012289094 | 2012-12-28 | ||
| JP2013264794A JP6280362B2 (ja) | 2012-12-28 | 2013-12-24 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014142923A JP2014142923A (ja) | 2014-08-07 |
| JP2014142923A5 JP2014142923A5 (enExample) | 2017-01-12 |
| JP6280362B2 true JP6280362B2 (ja) | 2018-02-14 |
Family
ID=51016516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013264794A Expired - Fee Related JP6280362B2 (ja) | 2012-12-28 | 2013-12-24 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US9316695B2 (enExample) |
| JP (1) | JP6280362B2 (enExample) |
| CN (1) | CN103913707B (enExample) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013156207A (ja) * | 2012-01-31 | 2013-08-15 | Semiconductor Components Industries Llc | 流体の流量測定装置 |
| JP2014143185A (ja) | 2012-12-28 | 2014-08-07 | Semiconductor Energy Lab Co Ltd | 蓄電装置及びその充電方法 |
| WO2015140844A1 (ja) * | 2014-03-19 | 2015-09-24 | パナソニック インテレクチュアル プロパティ コーポレーション オブ アメリカ | 情報端末の制御方法及びプログラム |
| FR3022411B1 (fr) * | 2014-06-13 | 2016-07-15 | Dcns | Engin sous marin comportant des sources de stockage d'energie a base de batteries lithium-ion |
| JP6328498B2 (ja) * | 2014-06-20 | 2018-05-23 | 株式会社ミツトヨ | 位置検出器 |
| CN104198907A (zh) * | 2014-09-10 | 2014-12-10 | 广东美的集团芜湖制冷设备有限公司 | 功率器件漏电流检测装置及智能功率模块检测设备 |
| US9413354B2 (en) | 2014-12-23 | 2016-08-09 | Apple Inc. | Method for communication across voltage domains |
| CN104678311B (zh) * | 2015-01-29 | 2017-10-20 | 北京新能源汽车股份有限公司 | 电动汽车的动力电压状态的检测装置 |
| CN104897953A (zh) * | 2015-01-30 | 2015-09-09 | 中天储能科技有限公司 | 锂电池bms系统充放电电流精确采样计算电路及控制方法 |
| DE102015002071A1 (de) * | 2015-02-18 | 2016-08-18 | Audi Ag | Batteriezelle mit Überwachungsvorrichtung und zugehöriges Betriebsverfahren |
| JP6546452B2 (ja) * | 2015-06-02 | 2019-07-17 | ローム株式会社 | 電池残量推定装置、電池残量推定システム、およびバッテリーパック |
| US20170063112A1 (en) * | 2015-08-31 | 2017-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device with monitoring ic |
| CN106556790B (zh) * | 2015-09-24 | 2020-05-12 | 中芯国际集成电路制造(上海)有限公司 | 一种硅通孔传感器及检测方法、电子装置 |
| WO2017061066A1 (ja) * | 2015-10-05 | 2017-04-13 | ソニー株式会社 | 残量測定装置、電池パック、電動工具、電動式航空機、電動車両及び電源装置 |
| US9564217B1 (en) * | 2015-10-19 | 2017-02-07 | United Microelectronics Corp. | Semiconductor memory device having integrated DOSRAM and NOSRAM |
| US10177142B2 (en) * | 2015-12-25 | 2019-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Circuit, logic circuit, processor, electronic component, and electronic device |
| CN105652177B (zh) * | 2016-03-11 | 2018-11-06 | 广东明阳龙源电力电子有限公司 | 一种用于多规格igbt性能测试的测试工装 |
| CN105680107B (zh) * | 2016-03-16 | 2018-09-25 | 中国科学院上海微系统与信息技术研究所 | 一种基于soi工艺的电池管理芯片电路 |
| DE102016207355A1 (de) * | 2016-04-29 | 2017-11-02 | Ford Global Technologies, Llc | LED-Anordnung und Verfahren zur umgebungslichtabhängigen Helligkeitssteuerung von LEDs |
| WO2017192849A2 (en) * | 2016-05-04 | 2017-11-09 | The Research Foundation For The State University Of New York | Radio frequency energy harvesting apparatus and method for utilizing the same |
| US10678073B2 (en) * | 2016-07-22 | 2020-06-09 | Skorpios Technologies, Inc. | On-chip high capacitance termination for transmitters |
| CN107918756A (zh) * | 2016-10-11 | 2018-04-17 | 群创光电股份有限公司 | 指纹感测装置以及显示器 |
| US10135087B2 (en) * | 2016-12-09 | 2018-11-20 | Unienergy Technologies, Llc | Matching state of charge in a string |
| CN107068611A (zh) * | 2016-12-23 | 2017-08-18 | 苏州能讯高能半导体有限公司 | 半导体芯片、半导体晶圆及半导体晶圆的制造方法 |
| CN108376695B (zh) * | 2018-02-05 | 2021-01-08 | 惠科股份有限公司 | 一种显示面板和显示装置 |
| CN112368773A (zh) | 2018-06-15 | 2021-02-12 | 株式会社半导体能源研究所 | 半导体装置 |
| WO2020065440A1 (ja) * | 2018-09-28 | 2020-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US12132334B2 (en) | 2018-11-22 | 2024-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and battery pack |
| US20220077705A1 (en) * | 2018-12-28 | 2022-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Protection circuit for secondary battery and secondary battery module |
| US10903802B2 (en) | 2019-02-01 | 2021-01-26 | Texas Instruments Incorporated | Analog based speaker thermal protection in class-D amplifiers |
| CN109860956B (zh) * | 2019-02-26 | 2021-11-23 | 中南大学 | 一种废铝回收系统及方法 |
| US10938353B2 (en) | 2019-03-26 | 2021-03-02 | Analog Devices International Unlimited Company | Coulomb counter with offset calibration |
| CN113631934A (zh) | 2019-03-26 | 2021-11-09 | 株式会社半导体能源研究所 | 半导体装置、电池组及电子设备 |
| CN109979504B (zh) * | 2019-03-29 | 2020-12-01 | 长江存储科技有限责任公司 | 一种静态随机存取存储器控制电路 |
| CN110224695A (zh) * | 2019-05-22 | 2019-09-10 | 长沙景美集成电路设计有限公司 | 一种硬件防水电容触摸按键电路 |
| US11422322B2 (en) * | 2019-07-12 | 2022-08-23 | Ayar Labs, Inc. | Hybrid multi-wavelength source and associated methods |
| US11387733B2 (en) | 2020-09-24 | 2022-07-12 | Apple Inc. | Rapid discharge of power nodes |
| KR102451581B1 (ko) * | 2020-12-22 | 2022-10-06 | 경북대학교 산학협력단 | 트랜지스터 고장 진단 장치 및 방법 |
| CN113058882B (zh) * | 2021-03-17 | 2022-06-03 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | 一种可靠片式钽电容器的筛选方法 |
| CN115268540B (zh) * | 2021-04-29 | 2023-08-11 | 圣邦微电子（北京）股份有限公司 | 一种具有采样保持功能的带隙基准电路 |
| CN115903974A (zh) * | 2022-09-07 | 2023-04-04 | 思瑞浦微电子科技（苏州）股份有限公司 | 低功耗带隙基准电路、实现方法及芯片 |
| US20240103072A1 (en) * | 2022-09-23 | 2024-03-28 | Intel Corporation | Testing a semiconductor device using x-rays |
| CN120446567A (zh) * | 2024-02-07 | 2025-08-08 | 台达电子工业股份有限公司 | 多路径的电流差检测装置 |
| CN118944607B (zh) * | 2024-10-12 | 2024-12-10 | 南京大学 | 复位式电荷灵敏放大电路、数据信号的放大及复位方法 |
Family Cites Families (141)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4083045A (en) * | 1975-07-03 | 1978-04-04 | Motorola, Inc. | Mos analog to digital converter |
| US4074260A (en) * | 1976-05-24 | 1978-02-14 | General Electric Co. | Analog-to-digital converter |
| JPS5829891B2 (ja) * | 1977-03-22 | 1983-06-25 | 株式会社日立製作所 | Ａ／ｄ変換回路 |
| US4567465A (en) * | 1982-05-25 | 1986-01-28 | Iwatsu Electric Co., Ltd. | Method and apparatus for converting analog signal into digital signal |
| JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
| US4621204A (en) * | 1984-07-26 | 1986-11-04 | Miles Laboratories, Inc. | Sensor integrator system |
| JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法 |
| JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| DE3710904A1 (de) * | 1987-04-01 | 1988-10-13 | Siemens Ag | Verfahren und anordnung zur auswertung einer analogen elektrischen messgroesse |
| JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0435526A (ja) * | 1990-05-31 | 1992-02-06 | Sony Corp | 積分型変換装置 |
| JP2512349B2 (ja) * | 1991-03-05 | 1996-07-03 | 横河インスツルメンツ株式会社 | 積分型アナログ・デジタル変換器 |
| JPH0566250A (ja) * | 1991-09-09 | 1993-03-19 | Matsushita Electric Ind Co Ltd | 電気量積算装置 |
| US5254928A (en) | 1991-10-01 | 1993-10-19 | Apple Computer, Inc. | Power management system for battery powered computers |
| JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
| US5450085A (en) * | 1993-08-31 | 1995-09-12 | Advanced Micro Devices, Inc. | Method and apparatus for high speed analog to digital conversion using multiplexed flash sections |
| JP3584502B2 (ja) | 1994-10-07 | 2004-11-04 | ソニー株式会社 | 充電制御装置 |
| JPH08136628A (ja) * | 1994-11-11 | 1996-05-31 | Fujitsu Ltd | 電池容量監視装置 |
| JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
| WO1997006554A2 (en) | 1995-08-03 | 1997-02-20 | Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
| JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
| KR19980065966A (ko) * | 1997-01-17 | 1998-10-15 | 김광호 | 배터리 용량 표시장치 |
| JPH1172544A (ja) * | 1997-06-20 | 1999-03-16 | Fuji Elelctrochem Co Ltd | 二次電池の残存容量の監視方法および監視装置 |
| TW419592B (en) * | 1998-03-31 | 2001-01-21 | Hitachi Maxell | Current accumulating value detecting apparatus, current detecting apparatus and the battery set used |
| JP3305257B2 (ja) | 1998-05-06 | 2002-07-22 | セイコーインスツルメンツ株式会社 | 充放電制御回路と充電式電源装置およびその制御方法 |
| JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Ｈｏｙａ株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
| JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
| JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
| TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
| JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
| KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
| JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
| JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
| US6693577B2 (en) * | 2001-07-19 | 2004-02-17 | Rohm Co., Ltd | Integration type A/D conversion method, integration type A/D converter, and battery charger utilizing such converter |
| JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
| JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
| JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
| US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
| KR100431747B1 (ko) * | 2001-11-29 | 2004-05-17 | 주식회사 하이닉스반도체 | 스위칭 노이즈가 제거된 스위치드 커패시터 적분기 |
| JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法 |
| US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
| JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
| US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
| DE10229460B3 (de) * | 2002-07-01 | 2004-01-29 | Texas Instruments Deutschland Gmbh | Spannungsfolger und ASK-Demodulator mit einem Spannungsfolger |
| US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
| JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
| JP2004364419A (ja) | 2003-06-05 | 2004-12-24 | Hitachi Ulsi Systems Co Ltd | 充電装置 |
| JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
| US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
| US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
| US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| KR101019337B1 (ko) | 2004-03-12 | 2011-03-07 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 아몰퍼스 산화물 및 박막 트랜지스터 |
| US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
| US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
| US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
| US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
| US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
| CN101057338B (zh) | 2004-11-10 | 2011-03-16 | 佳能株式会社 | 采用无定形氧化物的场效应晶体管 |
| CN101057333B (zh) | 2004-11-10 | 2011-11-16 | 佳能株式会社 | 发光器件 |
| US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
| CA2585190A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
| US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| TWI472037B (zh) | 2005-01-28 | 2015-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| TWI569441B (zh) | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
| US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
| KR100684761B1 (ko) | 2005-03-21 | 2007-02-20 | 삼성에스디아이 주식회사 | 이차전지 모듈 |
| WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
| US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
| US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
| JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
| US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
| KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
| JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機ｅｌ表示装置およびその製造方法 |
| JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
| JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
| JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
| JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
| EP1998374A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
| KR101358954B1 (ko) | 2005-11-15 | 2014-02-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 다이오드 및 액티브 매트릭스 표시장치 |
| TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
| US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
| JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法 |
| US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
| US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
| EP1821313A1 (en) * | 2006-02-17 | 2007-08-22 | Sicon Semiconductor AB | Track and hold circuit |
| KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ＺｎＯ ＴＦＴ |
| US7358743B2 (en) * | 2006-04-27 | 2008-04-15 | Freescale Semiconductor, Inc. | Accumulated current counter and method thereof |
| US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
| US7671658B2 (en) * | 2006-05-24 | 2010-03-02 | Panasonic Corporation | Mixer having frequency selection function |
| JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Ｎｅｃ液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
| JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
| JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
| JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
| US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
| US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
| JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーｅｌディスプレイおよびその製造方法 |
| KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
| US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
| KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
| US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
| KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
| KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
| WO2008133345A1 (en) | 2007-04-25 | 2008-11-06 | Canon Kabushiki Kaisha | Oxynitride semiconductor |
| KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ＺｎＯ 계 박막 트랜지스터 및 그 제조방법 |
| US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
| JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
| JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
| US8183834B2 (en) * | 2009-01-28 | 2012-05-22 | Atmel Corporation | Current to frequency conversion, apparatus and methods |
| US8901891B2 (en) * | 2009-02-25 | 2014-12-02 | Panasonic Corporation | Voltage polarity determination circuit and charge amount measurement circuit |
| JP4837111B2 (ja) * | 2009-03-02 | 2011-12-14 | 株式会社半導体理工学研究センター | 基準電流源回路 |
| JP5225186B2 (ja) | 2009-04-17 | 2013-07-03 | フリースケール セミコンダクター インコーポレイテッド | 充電制御回路及びこの充電制御回路を備えたバッテリ充電器 |
| US8452399B2 (en) * | 2009-06-23 | 2013-05-28 | Medtronic, Inc. | Constant current pacing apparatus with protection from high voltage pulses |
| US8704494B2 (en) | 2010-03-30 | 2014-04-22 | Maxim Integrated Products, Inc. | Circuit topology for pulsed power energy harvesting |
| US8237449B2 (en) * | 2010-05-27 | 2012-08-07 | Standard Microsystems Corporation | Bi-directional high side current sense measurement |
| JP2012039273A (ja) * | 2010-08-05 | 2012-02-23 | Yokogawa Electric Corp | 二重積分型ａｄ変換器および積分型ａｄ変換器 |
| JP5204176B2 (ja) * | 2010-09-06 | 2013-06-05 | 株式会社東芝 | 逐次比較型アナログデジタル変換回路及び受信装置 |
| CN102110718B (zh) * | 2010-10-20 | 2012-08-08 | 华南理工大学 | 用于薄膜晶体管的氧化物半导体薄膜及其制备方法 |
| CN201854063U (zh) * | 2010-11-16 | 2011-06-01 | 衡阳磬华电子技术有限公司 | 大容量充电电池组均衡放电装置 |
| JP2012163434A (ja) * | 2011-02-07 | 2012-08-30 | Rohm Co Ltd | 電池残量の検出回路、検出方法およびそれを用いた電子機器 |
| US9026387B2 (en) * | 2011-04-01 | 2015-05-05 | Intel Corporation | Battery voltage measurement |
| US9041353B2 (en) * | 2011-08-18 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Battery fuel gauge apparatus |
| JP6169376B2 (ja) | 2012-03-28 | 2017-07-26 | 株式会社半導体エネルギー研究所 | 電池管理ユニット、保護回路、蓄電装置 |
| US9160195B2 (en) | 2012-07-17 | 2015-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Charging device |
-
2013
- 2013-12-20 US US14/136,572 patent/US9316695B2/en active Active
- 2013-12-24 JP JP2013264794A patent/JP6280362B2/ja not_active Expired - Fee Related
- 2013-12-27 CN CN201310739246.6A patent/CN103913707B/zh active Active
-
2016
- 2016-03-11 US US15/067,382 patent/US20160195584A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN103913707B (zh) | 2018-04-20 |
| US20140184314A1 (en) | 2014-07-03 |
| US20160195584A1 (en) | 2016-07-07 |
| JP2014142923A (ja) | 2014-08-07 |
| US9316695B2 (en) | 2016-04-19 |
| CN103913707A (zh) | 2014-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6280362B2 (ja) | 半導体装置 | |
| US10290720B2 (en) | Semiconductor device and method for manufacturing the same | |
| JP6608988B2 (ja) | 蓄電システム | |
| US9812467B2 (en) | Semiconductor device comprising an oxide semiconductor | |
| US9330909B2 (en) | Semiconductor device | |
| US9219161B2 (en) | Semiconductor device | |
| US9852904B2 (en) | Method for manufacturing semiconductor device | |
| JP6230808B2 (ja) | 半導体装置 | |
| JP6329395B2 (ja) | 半導体装置 | |
| US9761611B2 (en) | Semiconductor device | |
| JP2017147469A (ja) | 半導体装置 | |
| WO2020152541A1 (ja) | 半導体装置及び半導体装置の動作方法 | |
| US9276125B2 (en) | Semiconductor device and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161118 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161118 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170810 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170829 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171011 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171226 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180119 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6280362 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |