JP6228542B2 - 電力変換用スイッチング素子および電力変換装置 - Google Patents
電力変換用スイッチング素子および電力変換装置 Download PDFInfo
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- JP6228542B2 JP6228542B2 JP2014534125A JP2014534125A JP6228542B2 JP 6228542 B2 JP6228542 B2 JP 6228542B2 JP 2014534125 A JP2014534125 A JP 2014534125A JP 2014534125 A JP2014534125 A JP 2014534125A JP 6228542 B2 JP6228542 B2 JP 6228542B2
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Description
図1は、本発明の第1の実施形態に係る電力変換用スイッチング素子100の構造の例を模式的に示した図であり、(a)は、その断面図の例、(b)は、平面配置図の例である。なお、図1(a)に示した断面図は、図1(b)の平面配置図における一点鎖線A−A’部分に対応する断面図である。
なお、ここでいう比較例とは、図1に示した電力変換用スイッチング素子100の第1のゲート電極6(G1)および第2のゲート電極13(G2)を、同じタイミングの駆動信号で駆動した場合をいう。また、本実施形態とは、図1に示した電力変換用スイッチング素子100の第1のゲート電極6(G1)および第2のゲート電極13(G2)を、図2で示した駆動信号で駆動した場合をいう。
また、コンデンサ21も抵抗20と同様に電力変換用スイッチング素子102という半導体装置の中に埋め込んで実現することができる。従って、第2の変形例に係る電力変換用スイッチング素子102でも、第1の変形例に係る電力変換用スイッチング素子101と同様の効果を得ることができる。
図13は、本発明の第2の実施形態に係る電力変換用スイッチング素子110の構造の例を模式的に示した図である。
図14は、本発明の第3の実施形態に係る電力変換用スイッチング素子120の構造の例を模式的に示した図である。
図15は、本発明の第4の実施形態に係る電力変換用スイッチング素子130の構造の例を模式的に示した図である。
図16は、本発明の第5の実施形態に係る電力変換用スイッチング素子140の構造の例を模式的に示した図である。
図17は、本発明の第6の実施形態に係る電力変換用スイッチング素子150の構造の例を模式的に示した図である。
図18は、本発明の第1〜第6の実施形態に係る電力変換用スイッチング素子100,110,120,130,140,150を適用した電力変換装置1000の回路構成の例を示した図である。このような電力変換装置1000は、一般にはインバータ装置と呼ばれ、例えば、直流電源960からの電気エネルギーを所望の周波数の交流電流に変換し、モータ950の回転数を可変速制御する用途などに用いられている。
1d n−型ドリフト層(第1導電型半導体層)
2 p型チャネル層(第2導電型チャネル層)
3 n型エミッタ領域(第1導電型エミッタ領域)
4 p型コレクタ層(第2導電型コレクタ層)
5 ゲート絶縁膜
6 第1のゲート電極(G1)
7 エミッタ電極
8 コレクタ電極
10 n型ホールバリア層(第1導電型のホールバリア層)
12 p型エミッタ領域
13 第2のゲート電極(G2)
14 n型バッファ層(第1導電型のバッファ層)
15 p型フローティング層
16 層間絶縁膜
21 抵抗
22 コンデンサ
31 IGBT
32 可変抵抗
33,34 バッファ回路
35 制御回路
36 マイコン
37 ゲート駆動回路
40 第1の金属配線
41 第2の金属配線
42 コンタクトホール
100,101,102.103 電力変換用スイッチング素子
110,120,130,140,150 電力変換用スイッチング素子
600 フライホイールダイオード(ダイオード)
700 電力変換用スイッチング素子
800 ゲート駆動回路
900 P端子
901 N端子
910 U端子
911 V端子
912 W端子
950 モータ
960 直流電源
Claims (13)
- 半導体基板に形成された第1導電型の半導体層と、
前記半導体基板の第1表面側に形成された複数のトレンチの互いに隣接する2つずつのトレンチのそれぞれに、前記第1導電型の半導体層とゲート絶縁膜を介して接するように設けられた第1のゲート電極および第2のゲート電極からなるゲート電極の組と、
前記ゲート電極の組の同じ組に属する前記第1のゲート電極および前記第2のゲート電極の間に挟まれた前記半導体基板の前記第1表面側に、前記ゲート絶縁膜を介して形成された第2導電型のチャネル層と、
前記チャネル層の表面の一部に、前記第1のゲート電極および前記第2のゲート電極のそれぞれに前記ゲート絶縁膜を介して接するように形成された第1導電型のエミッタ領域と、
前記第1導電型のエミッタ領域および前記第2導電型のチャネル層が電気的に接続されたエミッタ電極と、
前記第1導電型の半導体層に接し、前記半導体基板の第2表面側に形成された第2導電型のコレクタ層と、
前記第2導電型のコレクタ層に電気的に接続されたコレクタ電極と、
を備えた電力変換用スイッチング素子であって、
前記同じ組に属する前記第1のゲート電極と前記第2のゲート電極との間隔をaとし、前記互いに異なる組に属し、互いに隣接する2つのゲート電極同士の間隔をbとして、それぞれのゲート電極は、b>aを満たすように配置されており、
前記第1のゲート電極および前記第2のゲート電極には、駆動タイミングに時間差のある第1の駆動信号および第2の駆動信号がそれぞれ供給され、
前記時間差は、前記第1のゲート電極と前記第2のゲート電極との両方に時間差なく同じタイミングで駆動信号が供給される場合に比べて、前記電力変換用スイッチング素子のターンオン時のスイッチング速度を抑制する時間差である
ことを特徴とする電力変換用スイッチング素子。 - 請求項1に記載の電力変換用スイッチング素子において、
前記第1の駆動信号がターンオフされるタイミングと前記第2の駆動信号がターンオフされるタイミングとの間には、所定のターンオフ時間差が設定されている
ことを特徴とする電力変換用スイッチング素子。 - 請求項2に記載の電力変換用スイッチング素子において、
前記所定のターンオフ時間差は、3μ秒以上である
ことを特徴とする電力変換用スイッチング素子。 - 請求項1ないし請求項3のいずれか1項に記載の電力変換用スイッチング素子において、
前記エミッタ電極は、互いに異なる前記ゲート電極の組に属し、互いに隣接する2つのゲート電極に挟まれた領域において、前記第1導電型の半導体層と層間絶縁膜を介して接している
ことを特徴とする電力変換用スイッチング素子。 - 請求項1に記載の電力変換用スイッチング素子において、
前記同じ組に属する前記第1のゲート電極と前記第2のゲート電極との間隔aは1μm以下である
ことを特徴とする電力変換用スイッチング素子。 - 請求項1に記載の電力変換用スイッチング素子において、
前記第1のゲート電極と前記第2のゲート電極とは、抵抗を介して接続されており、前記第1のゲート電極を駆動する前記第1の駆動信号は、前記第2のゲート電極を駆動する前記第2の駆動信号を、前記抵抗により遅延させた信号である
ことを特徴とする電力変換用スイッチング素子。 - 請求項1に記載の電力変換用スイッチング素子において、
前記第1のゲート電極と前記第2のゲート電極とは、抵抗を介して接続され、かつ、前記第1のゲート電極と前記エミッタ電極とは、コンデンサを介して接続されており、
前記第1のゲート電極を駆動する前記第1の駆動信号は、前記第2のゲート電極を駆動する前記第2の駆動信号を、前記抵抗および前記コンデンサにより遅延させた信号である
ことを特徴とする電力変換用スイッチング素子。 - 請求項1に記載の電力変換用スイッチング素子において、
前記第1導電型の半導体層と前記第2導電型のコレクタ層との間に、前記第1導電型の半導体層よりも不純物の濃度が高濃度の第1導電型のバッファ層が形成されている
ことを特徴とする電力変換用スイッチング素子。 - 請求項1に記載の電力変換用スイッチング素子において、
前記第1のゲート電極および前記第2のゲート電極の組の同じ組に属する前記第1のゲート電極および前記第2のゲート電極の間に挟まれた前記チャネル層と前記第1導電型の半導体層との境界部分に、前記第1導電型の半導体層よりも不純物の濃度が高濃度の第1導電型のホールバリア層が形成されている
ことを特徴とする電力変換用スイッチング素子。 - 請求項1に記載の電力変換用スイッチング素子において、
前記エミッタ電極は、互いに異なる前記ゲート電極の組に属し、互いに隣接する2つのゲート電極に挟まれた領域では、前記半導体基板の表面よりも深い位置まで形成されており、かつ、前記エミッタ電極は、前記第1導電型の半導体層と層間絶縁膜を介して接しているとともに、前記ゲート電極と前記ゲート絶縁膜を介して接している
ことを特徴とする電力変換用スイッチング素子。 - 請求項1に記載の電力変換用スイッチング素子において、
前記ゲート電極の組の互いに異なる組に属し、互いに隣接する2つのゲート電極に挟まれた領域には、層間絶縁膜を介して前記エミッタ電極と接するとともに、前記第1導電型の半導体層に接する第2導電型のフローティング層をさらに備える
ことを特徴とする電力変換用スイッチング素子。 - 請求項1に記載の電力変換用スイッチング素子において、
前記ゲート電極の組は、互いに異なる前記ゲート電極の組に属し、互いに隣接する2つのゲート電極のうち、一方が前記第1のゲート電極となり、他方が前記第2のゲート電極となるように配置されている
ことを特徴とする電力変換用スイッチング素子。 - 一対の直流端子と、
電流をオン・オフする2つの電流スイッチング素子が前記直流端子間に直列に接続されて構成される直交流変換回路と、
前記直交流変換回路の前記2つの電流スイッチング素子が接続される箇所に接続される交流端子と、
を含んで構成される電力変換装置であって、
前記電流スイッチング素子は、請求項1ないし請求項12のいずれか1項に記載の電力変換用スイッチング素子である
ことを特徴とする電力変換装置。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6318061B2 (ja) * | 2014-09-22 | 2018-04-25 | 株式会社日立製作所 | 半導体装置 |
CN106463524B (zh) * | 2014-12-19 | 2019-10-18 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
JP2016162855A (ja) * | 2015-02-27 | 2016-09-05 | 株式会社日立製作所 | 半導体装置およびそれを用いた電力変換装置 |
JP6606364B2 (ja) * | 2015-07-02 | 2019-11-13 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2017022798A (ja) * | 2015-07-07 | 2017-01-26 | ルネサスエレクトロニクス株式会社 | 電力変換装置および駆動装置 |
JP6413965B2 (ja) * | 2015-07-20 | 2018-10-31 | 株式会社デンソー | 半導体装置 |
US10530360B2 (en) * | 2016-02-29 | 2020-01-07 | Infineon Technologies Austria Ag | Double gate transistor device and method of operating |
US10276681B2 (en) | 2016-02-29 | 2019-04-30 | Infineon Technologies Austria Ag | Double gate transistor device and method of operating |
JP6869791B2 (ja) * | 2017-04-21 | 2021-05-12 | 三菱電機株式会社 | 半導体スイッチング素子及びその製造方法 |
JP6981777B2 (ja) * | 2017-05-29 | 2021-12-17 | 株式会社 日立パワーデバイス | 半導体装置 |
JP7372027B2 (ja) * | 2018-03-08 | 2023-10-31 | 株式会社日立製作所 | インバータ装置 |
JP6896673B2 (ja) * | 2018-03-23 | 2021-06-30 | 株式会社東芝 | 半導体装置 |
JP7006547B2 (ja) | 2018-09-10 | 2022-01-24 | 三菱電機株式会社 | 半導体装置 |
JP6573016B2 (ja) * | 2018-09-27 | 2019-09-11 | 株式会社デンソー | 半導体装置 |
DE112019006364T5 (de) * | 2018-12-21 | 2021-09-02 | Rohm Co., Ltd. | Halbleiterbauelement |
JP7184681B2 (ja) * | 2019-03-18 | 2022-12-06 | 株式会社東芝 | 半導体装置およびその制御方法 |
US11101375B2 (en) | 2019-03-19 | 2021-08-24 | Kabushiki Kaisha Toshiba | Semiconductor device and method of controlling same |
JP7229064B2 (ja) * | 2019-03-27 | 2023-02-27 | 株式会社日立製作所 | 半導体装置およびそれを用いた電力変換装置並びに半導体装置の駆動方法 |
JP7484093B2 (ja) * | 2019-06-24 | 2024-05-16 | 富士電機株式会社 | 半導体装置 |
JP7363429B2 (ja) * | 2019-12-04 | 2023-10-18 | 株式会社デンソー | 半導体装置の駆動方法 |
US11374563B2 (en) * | 2020-03-03 | 2022-06-28 | Kabushiki Kaisha Toshiba | Method for controlling semiconductor device |
JP7472613B2 (ja) | 2020-04-09 | 2024-04-23 | 富士電機株式会社 | 半導体装置 |
JP7384750B2 (ja) * | 2020-06-10 | 2023-11-21 | 株式会社東芝 | 半導体装置 |
JP2022167435A (ja) | 2021-04-23 | 2022-11-04 | 株式会社 日立パワーデバイス | 半導体装置及びそれを用いた電力変換装置、半導体装置の製造方法 |
CN116632053B (zh) * | 2023-07-25 | 2024-01-30 | 深圳市美浦森半导体有限公司 | 一种rc-igbt器件的控制方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000101076A (ja) * | 1998-09-25 | 2000-04-07 | Toshiba Corp | 絶縁ゲート型半導体素子とその駆動方法 |
JP4829003B2 (ja) | 1999-02-17 | 2011-11-30 | 株式会社日立製作所 | 半導体装置及び電力変換装置 |
KR100745557B1 (ko) | 1999-02-17 | 2007-08-02 | 가부시키가이샤 히타치세이사쿠쇼 | Igbt 및 전력변환 장치 |
JP4310017B2 (ja) | 1999-02-17 | 2009-08-05 | 株式会社日立製作所 | 半導体装置及び電力変換装置 |
JP2004319624A (ja) | 2003-04-14 | 2004-11-11 | Denso Corp | 半導体装置 |
JP4398719B2 (ja) * | 2003-12-25 | 2010-01-13 | 株式会社東芝 | 半導体装置 |
US7638839B2 (en) * | 2007-03-09 | 2009-12-29 | Hitachi, Ltd. | Power semiconductor device and power conversion device using the same |
JP4644730B2 (ja) * | 2008-08-12 | 2011-03-02 | 株式会社日立製作所 | 半導体装置及びそれを用いた電力変換装置 |
JP5452195B2 (ja) | 2009-12-03 | 2014-03-26 | 株式会社 日立パワーデバイス | 半導体装置及びそれを用いた電力変換装置 |
JP4957840B2 (ja) * | 2010-02-05 | 2012-06-20 | 株式会社デンソー | 絶縁ゲート型半導体装置 |
WO2011104850A1 (ja) * | 2010-02-25 | 2011-09-01 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP5806535B2 (ja) * | 2011-07-20 | 2015-11-10 | 株式会社 日立パワーデバイス | 半導体装置及びそれを用いた電力変換装置 |
JP6072445B2 (ja) * | 2012-06-28 | 2017-02-01 | 株式会社 日立パワーデバイス | 半導体装置およびそれを用いた電力変換装置 |
JP5696713B2 (ja) * | 2012-11-06 | 2015-04-08 | 株式会社デンソー | 半導体装置及びその検査方法 |
JP5932623B2 (ja) * | 2012-12-05 | 2016-06-08 | 株式会社 日立パワーデバイス | 半導体装置およびそれを用いた電力変換装置 |
EP2942816B1 (en) * | 2013-08-15 | 2020-10-28 | Fuji Electric Co., Ltd. | Semiconductor device |
WO2016027721A1 (ja) * | 2014-08-20 | 2016-02-25 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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