JP7484093B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7484093B2 JP7484093B2 JP2019116483A JP2019116483A JP7484093B2 JP 7484093 B2 JP7484093 B2 JP 7484093B2 JP 2019116483 A JP2019116483 A JP 2019116483A JP 2019116483 A JP2019116483 A JP 2019116483A JP 7484093 B2 JP7484093 B2 JP 7484093B2
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- 239000004065 semiconductor Substances 0.000 title claims description 176
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- 238000005259 measurement Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
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- 239000011229 interlayer Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 210000000746 body region Anatomy 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- -1 composed of copper Chemical compound 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Description
10 半導体基板
11 コレクタ層
12 バッファ層
13 ドリフト層
14 ベース領域
15 ボディ領域
16 エミッタ領域
17 第1ゲートトレンチ部
18 第2ゲートトレンチ部
19 層間絶縁膜
20 エミッタ電極
21 コレクタ電極
22 第1ゲート配線
23 第2ゲート配線
24 第1抵抗部
25 第2抵抗部
26 ゲートパッド(第1ゲート電極パッド)
27 抵抗測定パッド(第2ゲート電極パッド)
28 形成領域
30 開口部
31 開口部
32 蓄積領域
171 第1ゲート絶縁膜
172 第1ゲート電極
181 第2ゲート絶縁膜
182 第2ゲート電極
Claims (10)
- 第1導電型のコレクタ層と、
前記コレクタ層の上に配置された第2導電型のドリフト層と、
前記ドリフト層の上に配置された第2導電型の蓄積領域と、
前記蓄積領域の上に配置された第1導電型のベース領域と、
前記ベース領域の表面層に配置された第2導電型のエミッタ領域と、
前記エミッタ領域に第1ゲート絶縁膜を介して接する第1ゲート電極と、
前記ベース領域を挟んで前記第1ゲート電極と対向すると共に、前記エミッタ領域に第2ゲート絶縁膜を介して接する第2ゲート電極と、
前記第1ゲート電極と電気的に接続された第1抵抗部と、
前記第1抵抗部よりも大きい抵抗値を有し、前記第2ゲート電極と電気的に接続された第2抵抗部と、
前記第1抵抗部及び前記第2抵抗部に電気的に接続されたゲート電極パッドと、
前記第1ゲート電極の端部に接続されるポリシリコンである第1配線層、及び前記第1配線層に接続される金属配線層である第2配線層を有し、前記第1ゲート電極と前記第1抵抗部とを電気的に接続する第1ゲート配線と、
前記第2ゲート電極に接続される金属配線層であり、前記第2ゲート電極と前記第2抵抗部とを電気的に接続する第2ゲート配線と、を有し、
前記ゲート電極パッドは、
前記第1抵抗部を介して前記第1ゲート配線に電気的に接続されると共に、前記第2抵抗部を介して前記第2ゲート配線に電気的に接続された第1ゲート電極パッドと、
前記第2抵抗部と前記第2ゲート配線の間に配置された第2ゲート電極パッドと、
を有することを特徴とする半導体装置。 - 複数の前記第1ゲート電極及び複数の前記第2ゲート電極を有し、
一の前記第1ゲート電極は、少なくとも一方に隣接して配置される他の前記第1ゲート電極との間に、一の前記第2ゲート電極が配置される、請求項1に記載の半導体装置。 - 複数の前記第1ゲート電極及び複数の前記第2ゲート電極を有し、
一の前記第2ゲート電極は、少なくとも一方に隣接して配置される他の前記第2ゲート電極との間に、一の前記第1ゲート電極が配置される、請求項1に記載の半導体装置。 - 前記第1ゲート電極及び前記第2ゲート電極は、交互に配置される、請求項2又は3に記載の半導体装置。
- 前記エミッタ領域と電気的に接続されたエミッタ電極を更に有し、
前記第1ゲート配線及び前記第2ゲート配線は、前記エミッタ電極を囲むように配置される、請求項1~4の何れか一項に記載の半導体装置。 - 前記エミッタ電極は凹部を有する矩形の平面形状を有し、
前記第1抵抗部及び前記第2抵抗部は、前記凹部に対向するように配置される、請求項5に記載の半導体装置。 - 前記エミッタ電極は、第1エミッタ電極と、前記第1エミッタ電極に離隔して配置された第2エミッタ電極とを含み、
前記第1抵抗部及び前記第2抵抗部は、第1エミッタ電極と前記第2エミッタ電極との間に配置される、請求項5又は6に記載の半導体装置。 - 前記第2抵抗部は、前記第1抵抗部と、前記第1抵抗部と異なる第3抵抗部との合成抵抗である、請求項1~7の何れか一項に記載の半導体装置。
- 前記第1抵抗部および前記第2抵抗部はポリシリコンである、請求項1~8のいずれか一項に記載の半導体装置。
- 前記第1抵抗部と前記第2抵抗部の抵抗値の比率は、2以上1000以下である、請求項1~9の何れか一項に記載の半導体装置。
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JP2019116483A JP7484093B2 (ja) | 2019-06-24 | 2019-06-24 | 半導体装置 |
US16/854,806 US11469316B2 (en) | 2019-06-24 | 2020-04-21 | Semiconductor device |
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JP2019116483A JP7484093B2 (ja) | 2019-06-24 | 2019-06-24 | 半導体装置 |
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WO2023223590A1 (ja) * | 2022-05-19 | 2023-11-23 | 住友電気工業株式会社 | 半導体チップ |
WO2023223589A1 (ja) * | 2022-05-19 | 2023-11-23 | 住友電気工業株式会社 | 半導体チップ |
Citations (10)
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JP2004319624A (ja) | 2003-04-14 | 2004-11-11 | Denso Corp | 半導体装置 |
JP2013251296A (ja) | 2012-05-30 | 2013-12-12 | Denso Corp | 半導体装置 |
WO2014038064A1 (ja) | 2012-09-07 | 2014-03-13 | 株式会社日立製作所 | 電力変換用スイッチング素子および電力変換装置 |
JP2014053634A (ja) | 2013-10-30 | 2014-03-20 | Fuji Electric Co Ltd | 半導体装置 |
JP2017143195A (ja) | 2016-02-10 | 2017-08-17 | 株式会社デンソー | 半導体装置 |
WO2018038133A1 (ja) | 2016-08-25 | 2018-03-01 | 三菱電機株式会社 | 炭化珪素半導体装置 |
JP2018093209A (ja) | 2018-01-09 | 2018-06-14 | ローム株式会社 | 半導体装置 |
JP2018117025A (ja) | 2017-01-17 | 2018-07-26 | 富士電機株式会社 | 半導体装置 |
JP2019057702A (ja) | 2017-09-20 | 2019-04-11 | 株式会社東芝 | 半導体装置 |
JP2019068036A (ja) | 2017-05-30 | 2019-04-25 | 富士電機株式会社 | 半導体装置 |
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JP4398719B2 (ja) * | 2003-12-25 | 2010-01-13 | 株式会社東芝 | 半導体装置 |
CN101983431B (zh) * | 2008-03-31 | 2014-02-19 | 三菱电机株式会社 | 半导体装置 |
JP5895947B2 (ja) * | 2012-02-14 | 2016-03-30 | トヨタ自動車株式会社 | Igbtの製造方法 |
JP6304878B2 (ja) * | 2014-04-25 | 2018-04-04 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2018026511A (ja) * | 2016-08-12 | 2018-02-15 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP2018107693A (ja) | 2016-12-27 | 2018-07-05 | ルネサスエレクトロニクス株式会社 | 半導体装置および電力変換装置 |
CN109524396B (zh) * | 2017-09-20 | 2023-05-12 | 株式会社东芝 | 半导体装置 |
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- 2019-06-24 JP JP2019116483A patent/JP7484093B2/ja active Active
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Patent Citations (10)
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---|---|---|---|---|
JP2004319624A (ja) | 2003-04-14 | 2004-11-11 | Denso Corp | 半導体装置 |
JP2013251296A (ja) | 2012-05-30 | 2013-12-12 | Denso Corp | 半導体装置 |
WO2014038064A1 (ja) | 2012-09-07 | 2014-03-13 | 株式会社日立製作所 | 電力変換用スイッチング素子および電力変換装置 |
JP2014053634A (ja) | 2013-10-30 | 2014-03-20 | Fuji Electric Co Ltd | 半導体装置 |
JP2017143195A (ja) | 2016-02-10 | 2017-08-17 | 株式会社デンソー | 半導体装置 |
WO2018038133A1 (ja) | 2016-08-25 | 2018-03-01 | 三菱電機株式会社 | 炭化珪素半導体装置 |
JP2018117025A (ja) | 2017-01-17 | 2018-07-26 | 富士電機株式会社 | 半導体装置 |
JP2019068036A (ja) | 2017-05-30 | 2019-04-25 | 富士電機株式会社 | 半導体装置 |
JP2019057702A (ja) | 2017-09-20 | 2019-04-11 | 株式会社東芝 | 半導体装置 |
JP2018093209A (ja) | 2018-01-09 | 2018-06-14 | ローム株式会社 | 半導体装置 |
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US11469316B2 (en) | 2022-10-11 |
US20200403089A1 (en) | 2020-12-24 |
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