JP2017143195A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2017143195A JP2017143195A JP2016024046A JP2016024046A JP2017143195A JP 2017143195 A JP2017143195 A JP 2017143195A JP 2016024046 A JP2016024046 A JP 2016024046A JP 2016024046 A JP2016024046 A JP 2016024046A JP 2017143195 A JP2017143195 A JP 2017143195A
- Authority
- JP
- Japan
- Prior art keywords
- trench
- region
- main
- charge storage
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000002344 surface layer Substances 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 210000000746 body region Anatomy 0.000 description 12
- 238000009825 accumulation Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000004088 simulation Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
- H01L29/7805—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode in antiparallel, e.g. freewheel diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
最初に、図1および図2を参照して、本実施形態に係る半導体装置の概略構成について説明する。図1は図2に示すI−I線に沿う断面図である。
ダミートレンチ15bの形状は、ミアンダ形状に限るものではない。例えば、第2実施形態における半導体装置110は、図6に示すように、第1主面10aを正面視したとき、ダミートレンチ15bが略はしご状に形成されている。具体的には、ダミートレンチ15bは、主トレンチ15aと平行に延びる幹部15cと枝部15dとを有し、枝部15dが幹部15cに直交するx方向に延びて形成されている。本実施形態におけるダミートレンチ15bにおいて、主トレンチ15aの延設方向に直交する方向成分は、枝部15dに相当する。ダミートレンチ15bは、どの主トレンチ15aを対称軸として選択しても、x方向において線対称に形成されている。
第2実施形態における半導体装置110では、ボディ領域14およびエミッタ領域19が、y方向において交互に並んで周期的形成され、x方向に延びるストライプ状を成している例について説明した。これに対して、第3実施形態における半導体装置120では、図7に示すように、ボディ領域14およびエミッタ領域19が、x方向において交互に並んで周期的形成され、y方向に延びるストライプ状を成している。エミッタ領域19はy方向に沿って主トレンチ15aに接触するように直線状に形成されている。この半導体装置120にあっては、第2実施形態のようなx方向に延びるエミッタ領域19は存在しないので、ダミートレンチ15bにおける幹部15cと枝部15dの接続位置を任意に設定することができる。すなわち、枝部15dのy方向における形成密度を第2実施形態よりも高くすることができる。これにより、電荷蓄積領域13とダミートレンチ15bとの接触面積と、電荷蓄積領域13と主トレンチ15aとの接触面積の面積比を、第2実施形態の場合よりも大きくすることができる。したがって、CS濃度を低下させることなく、より効果的にIgの変動量を低減することができる。
第1実施形態における半導体装置100では、トレンチゲート15は、主トレンチ15a、ダミートレンチ15bともに、トレンチ16の第1主面10aからの形成深さは同一であった。これに対して、本実施形態における半導体装置130は、図8に示すように、主トレンチ15aの形成深さが、ダミートレンチ15bよりも浅くされている。
第1実施形態における半導体装置100では、主トレンチ15a、ダミートレンチ15bともに、絶縁膜17の膜厚は、トレンチ16の内壁面内において均一であった。これに対して、本実施形態における半導体装置140は、図9に示すように、主トレンチ15aにおける絶縁膜17が、n導電型の不純物領域である電荷蓄積領域13およびドリフト領域12と接触する部分において、その他の部分よりも厚膜化されている。
以上、本発明の好ましい実施形態について説明したが、本発明は上記した実施形態になんら制限されることなく、本発明の主旨を逸脱しない範囲において、種々変形して実施することが可能である。
Claims (9)
- 第1主面(10a)および前記第1主面の裏面である第2主面(10b)を有する半導体基板(10)と、
前記第1主面の表層に形成された第1導電型の第1領域(14)と、
前記第1領域に隣接するように前記第1領域と前記第2主面の間に形成された第2導電型のドリフト領域(12)と、
前記ドリフト領域の一部であって、前記ドリフト領域よりも不純物濃度が高くされた第2導電型の電荷蓄積領域(13)と、
前記第1主面から前記半導体基板の深さ方向に延び、前記第1領域および前記電荷蓄積領域を貫通して形成されたトレンチ(16)と、前記トレンチの内部に絶縁膜(17)を介して形成されたゲート電極(18)と、を有するトレンチゲート(15)と、
前記第1領域に囲まれて形成され、前記トレンチゲートに接触しつつ前記第1主面に露出する第2導電型の第2領域(19)と、を備え、
前記トレンチゲートは、
前記ゲート電極にゲート電圧が印加される主トレンチ(15a)と、
前記ゲート電極に前記主トレンチとは異なる電圧が印加されるダミートレンチ(15b)と、を有し、
前記主トレンチとの間で前記電荷蓄積領域を挟み込むように形成された前記ダミートレンチについて、前記ダミートレンチと、挟まれた前記電荷蓄積領域との接触面積S1が、前記主トレンチと前記電荷蓄積領域との接触面積S2よりも大きい半導体装置。 - 前記ダミートレンチと前記電荷蓄積領域との接触面積S1と、前記主トレンチと前記電荷蓄積領域との接触面積S2との面積比S1/S2は、S1/S2≧2の関係を満たす請求項1に記載の半導体装置。
- 前記ダミートレンチにおける前記ゲート電極の電位は、前記第2領域と等電位とされる請求項1または請求項2に記載の半導体装置。
- 前記第1主面を正面視したとき、前記主トレンチは所定の延設方向に沿って延設され、
前記ダミートレンチは、前記延設方向に直交する方向成分を含んで前記延設方向に延びる請求項1〜3のいずれか1項に記載の半導体装置。 - 前記第1主面を正面視したとき、前記ダミートレンチは、前記主トレンチの延設方向に直交する方向に複数の折り返しを有するミアンダ形状を含む請求項4に記載の半導体装置。
- 前記第1主面を正面視したとき、前記ダミートレンチは、前記主トレンチの延設方向に沿う幹部と、前記幹部から延び、前記延設方向に直交する成分を含んで形状される枝部と、を有する請求項4または請求項5に記載の半導体装置。
- 前記第1主面を正面視したとき、前記ダミートレンチは、前記主トレンチの延設方向に沿う部分の沿面距離よりも、前記延設方向に直交する方向成分を含む部分の沿面距離が長くされている請求項4〜6のいずれか1項に記載の半導体装置。
- 前記主トレンチにおける前記トレンチの深さは、前記ダミートレンチにおける前記トレンチの深さよりも浅くされている請求項1〜7のいずれか1項に記載の半導体装置。
- 前記主トレンチにおいて、前記ドリフト領域と接触する前記絶縁膜の少なくとも一部は、前記絶縁膜の膜厚が、前記ダミートレンチにおける前記絶縁膜の膜厚よりも厚い請求項1〜8のいずれか1項に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016024046A JP6634860B2 (ja) | 2016-02-10 | 2016-02-10 | 半導体装置 |
US16/066,327 US11121241B2 (en) | 2016-02-10 | 2016-12-01 | Semiconductor device |
PCT/JP2016/085660 WO2017138231A1 (ja) | 2016-02-10 | 2016-12-01 | 半導体装置 |
CN201680081227.0A CN108780808B (zh) | 2016-02-10 | 2016-12-01 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016024046A JP6634860B2 (ja) | 2016-02-10 | 2016-02-10 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017143195A true JP2017143195A (ja) | 2017-08-17 |
JP6634860B2 JP6634860B2 (ja) | 2020-01-22 |
Family
ID=59563212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016024046A Active JP6634860B2 (ja) | 2016-02-10 | 2016-02-10 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11121241B2 (ja) |
JP (1) | JP6634860B2 (ja) |
CN (1) | CN108780808B (ja) |
WO (1) | WO2017138231A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110350023A (zh) * | 2018-04-05 | 2019-10-18 | 三菱电机株式会社 | 半导体装置以及电力变换装置 |
JP2021002620A (ja) * | 2019-06-24 | 2021-01-07 | 富士電機株式会社 | 半導体装置 |
US11349018B2 (en) | 2019-03-20 | 2022-05-31 | Kabushiki Kaisha Toshiba | Semiconductor device and semiconductor circuit |
JP7475265B2 (ja) | 2020-12-14 | 2024-04-26 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6634860B2 (ja) * | 2016-02-10 | 2020-01-22 | 株式会社デンソー | 半導体装置 |
US11004945B2 (en) | 2019-05-21 | 2021-05-11 | Infineon Technologies Austria Ag | Semiconductor device with spicular-shaped field plate structures and a current spread region |
JP7330092B2 (ja) * | 2019-12-25 | 2023-08-21 | 三菱電機株式会社 | 半導体装置 |
US11764273B2 (en) * | 2021-06-01 | 2023-09-19 | Globalfoundries Singapore Pte. Ltd. | Semiconductor structures for galvanic isolation |
JP2024046362A (ja) * | 2022-09-22 | 2024-04-03 | 株式会社 日立パワーデバイス | 半導体装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002058160A1 (fr) * | 2001-01-19 | 2002-07-25 | Mitsubishi Denki Kabushiki Kaisha | Dispositif a semi-conducteur |
JP2006245477A (ja) * | 2005-03-07 | 2006-09-14 | Toshiba Corp | 半導体装置 |
WO2012169053A1 (ja) * | 2011-06-09 | 2012-12-13 | トヨタ自動車株式会社 | 半導体装置および半導体装置の製造方法 |
JP2013021104A (ja) * | 2011-07-11 | 2013-01-31 | Toyota Central R&D Labs Inc | 半導体装置 |
WO2013161568A1 (ja) * | 2012-04-23 | 2013-10-31 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP2014523135A (ja) * | 2011-07-14 | 2014-09-08 | アーベーベー・テヒノロギー・アーゲー | 絶縁ゲート型バイポーラトランジスタ |
WO2014174911A1 (ja) * | 2013-04-23 | 2014-10-30 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3961946B2 (ja) | 1997-03-14 | 2007-08-22 | 株式会社東芝 | 半導体装置 |
EP1396030B1 (en) * | 2001-04-11 | 2011-06-29 | Silicon Semiconductor Corporation | Vertical power semiconductor device and method of making the same |
JP3927111B2 (ja) | 2002-10-31 | 2007-06-06 | 株式会社東芝 | 電力用半導体装置 |
US8154073B2 (en) * | 2006-07-14 | 2012-04-10 | Denso Corporation | Semiconductor device |
JP2008021918A (ja) | 2006-07-14 | 2008-01-31 | Mitsubishi Electric Corp | 半導体装置 |
JP4688901B2 (ja) * | 2008-05-13 | 2011-05-25 | 三菱電機株式会社 | 半導体装置 |
JP2010028029A (ja) * | 2008-07-24 | 2010-02-04 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
US9099522B2 (en) * | 2010-03-09 | 2015-08-04 | Fuji Electric Co., Ltd. | Semiconductor device |
JP5343916B2 (ja) * | 2010-04-16 | 2013-11-13 | 富士通セミコンダクター株式会社 | 半導体メモリ |
JP5568036B2 (ja) * | 2011-03-09 | 2014-08-06 | トヨタ自動車株式会社 | Igbt |
JP5634318B2 (ja) * | 2011-04-19 | 2014-12-03 | 三菱電機株式会社 | 半導体装置 |
JP5348276B2 (ja) | 2011-07-04 | 2013-11-20 | 株式会社デンソー | 半導体装置 |
CN102832237B (zh) * | 2012-07-03 | 2015-04-01 | 电子科技大学 | 一种槽型半导体功率器件 |
JP5983864B2 (ja) * | 2013-04-02 | 2016-09-06 | トヨタ自動車株式会社 | トレンチゲート電極を利用するigbt |
EP2985790B1 (en) * | 2013-04-11 | 2021-06-09 | Fuji Electric Co., Ltd. | Semiconductor device and semiconductor device manufacturing method |
US10529839B2 (en) * | 2015-05-15 | 2020-01-07 | Fuji Electric Co., Ltd. | Semiconductor device |
DE112016000210T5 (de) * | 2015-07-16 | 2017-09-07 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen der Halbleitervorrichtung |
JP6665457B2 (ja) * | 2015-09-16 | 2020-03-13 | 富士電機株式会社 | 半導体装置 |
DE102015121497B4 (de) * | 2015-12-10 | 2022-01-27 | Infineon Technologies Austria Ag | Halbleitervorrichtung mit einem ersten gategraben und einem zweiten gategraben |
JP6676947B2 (ja) * | 2015-12-14 | 2020-04-08 | 富士電機株式会社 | 半導体装置 |
JP6634860B2 (ja) * | 2016-02-10 | 2020-01-22 | 株式会社デンソー | 半導体装置 |
CN107924951B (zh) * | 2016-03-10 | 2021-11-23 | 富士电机株式会社 | 半导体装置 |
JP6919159B2 (ja) * | 2016-07-29 | 2021-08-18 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US10529845B2 (en) * | 2018-03-09 | 2020-01-07 | Infineon Technologies Austria Ag | Semiconductor device |
-
2016
- 2016-02-10 JP JP2016024046A patent/JP6634860B2/ja active Active
- 2016-12-01 CN CN201680081227.0A patent/CN108780808B/zh active Active
- 2016-12-01 WO PCT/JP2016/085660 patent/WO2017138231A1/ja active Application Filing
- 2016-12-01 US US16/066,327 patent/US11121241B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002058160A1 (fr) * | 2001-01-19 | 2002-07-25 | Mitsubishi Denki Kabushiki Kaisha | Dispositif a semi-conducteur |
JP2006245477A (ja) * | 2005-03-07 | 2006-09-14 | Toshiba Corp | 半導体装置 |
WO2012169053A1 (ja) * | 2011-06-09 | 2012-12-13 | トヨタ自動車株式会社 | 半導体装置および半導体装置の製造方法 |
JP2013021104A (ja) * | 2011-07-11 | 2013-01-31 | Toyota Central R&D Labs Inc | 半導体装置 |
JP2014523135A (ja) * | 2011-07-14 | 2014-09-08 | アーベーベー・テヒノロギー・アーゲー | 絶縁ゲート型バイポーラトランジスタ |
WO2013161568A1 (ja) * | 2012-04-23 | 2013-10-31 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
WO2014174911A1 (ja) * | 2013-04-23 | 2014-10-30 | 三菱電機株式会社 | 半導体装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110350023A (zh) * | 2018-04-05 | 2019-10-18 | 三菱电机株式会社 | 半导体装置以及电力变换装置 |
US10872959B2 (en) | 2018-04-05 | 2020-12-22 | Mitsubishi Electric Corporation | Semiconductor device and power converter |
CN110350023B (zh) * | 2018-04-05 | 2024-05-28 | 三菱电机株式会社 | 半导体装置以及电力变换装置 |
US11349018B2 (en) | 2019-03-20 | 2022-05-31 | Kabushiki Kaisha Toshiba | Semiconductor device and semiconductor circuit |
JP2021002620A (ja) * | 2019-06-24 | 2021-01-07 | 富士電機株式会社 | 半導体装置 |
JP7484093B2 (ja) | 2019-06-24 | 2024-05-16 | 富士電機株式会社 | 半導体装置 |
JP7475265B2 (ja) | 2020-12-14 | 2024-04-26 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108780808B (zh) | 2021-07-16 |
WO2017138231A1 (ja) | 2017-08-17 |
US20190027592A1 (en) | 2019-01-24 |
CN108780808A (zh) | 2018-11-09 |
US11121241B2 (en) | 2021-09-14 |
JP6634860B2 (ja) | 2020-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2017143195A (ja) | 半導体装置 | |
JP2008288386A (ja) | 半導体装置 | |
US10074719B2 (en) | Semiconductor device in which an insulated-gate bipolar transistor ( IGBT) region and a diode region are formed on one semiconductor substrate | |
JP2018073911A (ja) | 半導体装置 | |
CN107924942A (zh) | 半导体装置 | |
JPWO2010143288A1 (ja) | 半導体装置 | |
JP2016157934A (ja) | 半導体装置 | |
JP5297706B2 (ja) | 半導体装置 | |
JP6515484B2 (ja) | 半導体装置 | |
CN105900245B (zh) | 半导体装置 | |
JP2014187141A (ja) | 半導体装置 | |
JP2016136620A (ja) | 半導体装置 | |
JP2022000920A (ja) | 半導体装置 | |
JP2010232335A (ja) | 絶縁ゲートバイポーラトランジスタ | |
CN103681668A (zh) | 半导体装置 | |
JP2008244466A (ja) | 半導体装置 | |
JP2014103352A (ja) | 半導体装置 | |
JP2016096307A (ja) | 半導体装置 | |
US20140159104A1 (en) | Semiconductor device | |
JP2018182240A (ja) | 半導体スイッチング素子及びその製造方法 | |
JP5698302B2 (ja) | 半導体装置 | |
JP2016028405A (ja) | 半導体装置 | |
JP5568904B2 (ja) | 半導体装置 | |
CN113302732B (zh) | 半导体装置 | |
JP2017079292A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180221 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190423 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190619 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191119 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191202 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6634860 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |