JP6124668B2 - 薄膜トランジスタ基板およびその製造方法 - Google Patents

薄膜トランジスタ基板およびその製造方法 Download PDF

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JP6124668B2
JP6124668B2 JP2013093330A JP2013093330A JP6124668B2 JP 6124668 B2 JP6124668 B2 JP 6124668B2 JP 2013093330 A JP2013093330 A JP 2013093330A JP 2013093330 A JP2013093330 A JP 2013093330A JP 6124668 B2 JP6124668 B2 JP 6124668B2
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electrode
film
drain electrode
insulating film
source electrode
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JP2014215485A5 (enExample
JP2014215485A (ja
Inventor
顕祐 長山
顕祐 長山
井上　和式
和式 井上
伊藤　康悦
康悦 伊藤
展昭 石賀
展昭 石賀
津村　直樹
直樹 津村
矢野　伸一
伸一 矢野
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2013093330A priority Critical patent/JP6124668B2/ja
Priority to US14/255,167 priority patent/US9190420B2/en
Publication of JP2014215485A publication Critical patent/JP2014215485A/ja
Priority to US14/839,470 priority patent/US9343487B2/en
Publication of JP2014215485A5 publication Critical patent/JP2014215485A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2013093330A 2013-04-26 2013-04-26 薄膜トランジスタ基板およびその製造方法 Active JP6124668B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013093330A JP6124668B2 (ja) 2013-04-26 2013-04-26 薄膜トランジスタ基板およびその製造方法
US14/255,167 US9190420B2 (en) 2013-04-26 2014-04-17 Thin film transistor substrate and manufacturing method thereof
US14/839,470 US9343487B2 (en) 2013-04-26 2015-08-28 Thin film transistor substrate and manufacturing method thereof

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JP2013093330A JP6124668B2 (ja) 2013-04-26 2013-04-26 薄膜トランジスタ基板およびその製造方法

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JP2014215485A JP2014215485A (ja) 2014-11-17
JP2014215485A5 JP2014215485A5 (enExample) 2016-06-16
JP6124668B2 true JP6124668B2 (ja) 2017-05-10

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JP (1) JP6124668B2 (enExample)

Families Citing this family (14)

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JP6124668B2 (ja) * 2013-04-26 2017-05-10 三菱電機株式会社 薄膜トランジスタ基板およびその製造方法
JPWO2015045213A1 (ja) * 2013-09-30 2017-03-09 株式会社Ｊｏｌｅｄ 薄膜トランジスタ基板及びその製造方法
CN104037126A (zh) * 2014-05-16 2014-09-10 京东方科技集团股份有限公司 一种阵列基板的制备方法、阵列基板和显示装置
CN104216186B (zh) * 2014-08-15 2018-01-26 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
JP6422310B2 (ja) * 2014-11-12 2018-11-14 三菱電機株式会社 薄膜トランジスタ基板、その製造方法、及び、液晶表示装置
JP6501514B2 (ja) * 2014-12-24 2019-04-17 三菱電機株式会社 薄膜トランジスタ基板およびその製造方法
WO2016104216A1 (ja) * 2014-12-26 2016-06-30 シャープ株式会社 半導体装置、表示装置および半導体装置の製造方法
JP6279106B2 (ja) * 2015-01-08 2018-02-14 三菱電機株式会社 薄膜トランジスタ基板、薄膜トランジスタ基板の製造方法、液晶表示装置
JP6478819B2 (ja) * 2015-06-04 2019-03-06 三菱電機株式会社 薄膜トランジスタ基板およびその製造方法
JP6671155B2 (ja) * 2015-11-26 2020-03-25 三菱電機株式会社 薄膜トランジスタ基板
JP6967371B2 (ja) 2017-05-26 2021-11-17 株式会社ジャパンディスプレイ アクティブマトリクス基板
KR102506035B1 (ko) * 2017-12-27 2023-03-03 엘지디스플레이 주식회사 전계발광 표시장치
JP2019169660A (ja) * 2018-03-26 2019-10-03 三菱電機株式会社 薄膜トランジスタ基板、表示装置、および、薄膜トランジスタ基板の製造方法
KR20240159710A (ko) * 2023-04-27 2024-11-06 삼성디스플레이 주식회사 표시 패널 및 이의 제조 방법

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Also Published As

Publication number Publication date
US9343487B2 (en) 2016-05-17
US20150372027A1 (en) 2015-12-24
US9190420B2 (en) 2015-11-17
US20140319515A1 (en) 2014-10-30
JP2014215485A (ja) 2014-11-17

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