JP5977524B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5977524B2
JP5977524B2 JP2012001777A JP2012001777A JP5977524B2 JP 5977524 B2 JP5977524 B2 JP 5977524B2 JP 2012001777 A JP2012001777 A JP 2012001777A JP 2012001777 A JP2012001777 A JP 2012001777A JP 5977524 B2 JP5977524 B2 JP 5977524B2
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JP
Japan
Prior art keywords
transistor
oxide semiconductor
electrode
film
semiconductor film
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Expired - Fee Related
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JP2012001777A
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Japanese (ja)
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JP2012160719A (ja
JP2012160719A5 (enExample
Inventor
山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012001777A priority Critical patent/JP5977524B2/ja
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Publication of JP2012160719A5 publication Critical patent/JP2012160719A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2012001777A 2011-01-12 2012-01-10 半導体装置の作製方法 Expired - Fee Related JP5977524B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012001777A JP5977524B2 (ja) 2011-01-12 2012-01-10 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011004420 2011-01-12
JP2011004420 2011-01-12
JP2012001777A JP5977524B2 (ja) 2011-01-12 2012-01-10 半導体装置の作製方法

Related Child Applications (1)

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JP2016144283A Division JP6268236B2 (ja) 2011-01-12 2016-07-22 半導体装置

Publications (3)

Publication Number Publication Date
JP2012160719A JP2012160719A (ja) 2012-08-23
JP2012160719A5 JP2012160719A5 (enExample) 2015-01-22
JP5977524B2 true JP5977524B2 (ja) 2016-08-24

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Family Applications (6)

Application Number Title Priority Date Filing Date
JP2012001777A Expired - Fee Related JP5977524B2 (ja) 2011-01-12 2012-01-10 半導体装置の作製方法
JP2016144283A Expired - Fee Related JP6268236B2 (ja) 2011-01-12 2016-07-22 半導体装置
JP2017247706A Active JP6678637B2 (ja) 2011-01-12 2017-12-25 半導体装置の作製方法
JP2020046092A Withdrawn JP2020113780A (ja) 2011-01-12 2020-03-17 半導体装置
JP2022090106A Withdrawn JP2022118031A (ja) 2011-01-12 2022-06-02 半導体装置
JP2024028025A Withdrawn JP2024073476A (ja) 2011-01-12 2024-02-28 半導体装置の作製方法

Family Applications After (5)

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JP2016144283A Expired - Fee Related JP6268236B2 (ja) 2011-01-12 2016-07-22 半導体装置
JP2017247706A Active JP6678637B2 (ja) 2011-01-12 2017-12-25 半導体装置の作製方法
JP2020046092A Withdrawn JP2020113780A (ja) 2011-01-12 2020-03-17 半導体装置
JP2022090106A Withdrawn JP2022118031A (ja) 2011-01-12 2022-06-02 半導体装置
JP2024028025A Withdrawn JP2024073476A (ja) 2011-01-12 2024-02-28 半導体装置の作製方法

Country Status (5)

Country Link
US (2) US8536571B2 (enExample)
JP (6) JP5977524B2 (enExample)
KR (3) KR101460850B1 (enExample)
CN (3) CN107256868A (enExample)
TW (1) TWI532099B (enExample)

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TWI535032B (zh) 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5977523B2 (ja) 2011-01-12 2016-08-24 株式会社半導体エネルギー研究所 トランジスタの作製方法
JP5982125B2 (ja) 2011-01-12 2016-08-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI570809B (zh) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI613822B (zh) 2011-09-29 2018-02-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
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US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TW201901972A (zh) * 2012-01-26 2019-01-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP6009182B2 (ja) * 2012-03-13 2016-10-19 株式会社半導体エネルギー研究所 半導体装置
JP6001308B2 (ja) 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 半導体装置
JP6076612B2 (ja) 2012-04-17 2017-02-08 株式会社半導体エネルギー研究所 半導体装置
KR102113160B1 (ko) 2012-06-15 2020-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102400509B1 (ko) * 2012-09-13 2022-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI709244B (zh) * 2012-09-24 2020-11-01 日商半導體能源研究所股份有限公司 半導體裝置
TWI490885B (zh) * 2012-10-05 2015-07-01 Far Eastern New Century Corp 於基板上形成透明導電層的方法
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TWI614813B (zh) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
TWI611566B (zh) 2013-02-25 2018-01-11 半導體能源研究所股份有限公司 顯示裝置和電子裝置
DE102014019794B4 (de) * 2013-05-20 2024-10-24 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
US9754978B2 (en) 2013-10-11 2017-09-05 Sharp Kabushiki Kaisha Semiconductor device with U-shaped active portion
CN105765720B (zh) * 2013-11-18 2019-06-14 夏普株式会社 半导体装置
TWI534089B (zh) 2013-12-31 2016-05-21 財團法人工業技術研究院 ｐ型金屬氧化物半導體材料及其製造方法
WO2015151337A1 (ja) * 2014-03-31 2015-10-08 株式会社 東芝 薄膜トランジスタ、半導体装置及び薄膜トランジスタの製造方法
US9461114B2 (en) 2014-12-05 2016-10-04 Samsung Electronics Co., Ltd. Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same
KR102334986B1 (ko) * 2014-12-09 2021-12-06 엘지디스플레이 주식회사 산화물 반도체층의 결정화 방법, 이를 적용한 반도체 장치 및 이의 제조 방법
CN104681491B (zh) * 2015-03-09 2017-11-10 京东方科技集团股份有限公司 Cmos电路结构、其制作方法、显示基板及显示装置
JP6906940B2 (ja) * 2015-12-28 2021-07-21 株式会社半導体エネルギー研究所 半導体装置
KR102480052B1 (ko) 2016-06-09 2022-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
CN106684037B (zh) * 2017-03-22 2019-09-24 深圳市华星光电半导体显示技术有限公司 优化4m制程的tft阵列制备方法
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KR20120090784A (ko) 2012-08-17
JP2018078316A (ja) 2018-05-17
KR20190009818A (ko) 2019-01-29
KR20140061341A (ko) 2014-05-21
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