JP5854895B2 - 電力用半導体装置 - Google Patents

電力用半導体装置 Download PDF

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Publication number
JP5854895B2
JP5854895B2 JP2012054269A JP2012054269A JP5854895B2 JP 5854895 B2 JP5854895 B2 JP 5854895B2 JP 2012054269 A JP2012054269 A JP 2012054269A JP 2012054269 A JP2012054269 A JP 2012054269A JP 5854895 B2 JP5854895 B2 JP 5854895B2
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Japan
Prior art keywords
power semiconductor
command
semiconductor elements
resistance element
control unit
Prior art date
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Application number
JP2012054269A
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English (en)
Japanese (ja)
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JP2012249509A5 (enExample
JP2012249509A (ja
Inventor
ハッサン フッセイン ハリッド
ハッサン フッセイン ハリッド
敏之 熊谷
敏之 熊谷
省二 斉藤
省二 斉藤
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2012054269A priority Critical patent/JP5854895B2/ja
Priority to US13/440,404 priority patent/US8766702B2/en
Priority to KR1020120044400A priority patent/KR101389811B1/ko
Priority to DE102012207222.5A priority patent/DE102012207222B4/de
Priority to DE102012025769.4A priority patent/DE102012025769B3/de
Priority to CN201210196241.9A priority patent/CN102769375B/zh
Publication of JP2012249509A publication Critical patent/JP2012249509A/ja
Publication of JP2012249509A5 publication Critical patent/JP2012249509A5/ja
Application granted granted Critical
Publication of JP5854895B2 publication Critical patent/JP5854895B2/ja
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H03K17/164—Soft switching using parallel switching arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
JP2012054269A 2011-05-02 2012-03-12 電力用半導体装置 Active JP5854895B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012054269A JP5854895B2 (ja) 2011-05-02 2012-03-12 電力用半導体装置
US13/440,404 US8766702B2 (en) 2011-05-02 2012-04-05 Power semiconductor device having plurality of switching elements connected in parallel
KR1020120044400A KR101389811B1 (ko) 2011-05-02 2012-04-27 병렬접속된 복수의 스위칭 소자를 갖는 전력용 반도체장치
DE102012025769.4A DE102012025769B3 (de) 2011-05-02 2012-04-30 Leistungshalbleitervorrichtung mit einer Mehrzahl parallel geschalteter Schaltelemente
DE102012207222.5A DE102012207222B4 (de) 2011-05-02 2012-04-30 Leistungshalbleitervorrichtung mit einer Mehrzahl parallel geschalteter Schaltelemente
CN201210196241.9A CN102769375B (zh) 2011-05-02 2012-05-02 具有并联连接的多个开关元件的功率用半导体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011102779 2011-05-02
JP2011102779 2011-05-02
JP2012054269A JP5854895B2 (ja) 2011-05-02 2012-03-12 電力用半導体装置

Publications (3)

Publication Number Publication Date
JP2012249509A JP2012249509A (ja) 2012-12-13
JP2012249509A5 JP2012249509A5 (enExample) 2014-07-10
JP5854895B2 true JP5854895B2 (ja) 2016-02-09

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Family Applications (1)

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JP2012054269A Active JP5854895B2 (ja) 2011-05-02 2012-03-12 電力用半導体装置

Country Status (5)

Country Link
US (1) US8766702B2 (enExample)
JP (1) JP5854895B2 (enExample)
KR (1) KR101389811B1 (enExample)
CN (1) CN102769375B (enExample)
DE (2) DE102012025769B3 (enExample)

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JP2014233127A (ja) * 2013-05-28 2014-12-11 株式会社豊田自動織機 駆動回路
DE102013108078B4 (de) 2013-07-29 2021-09-09 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleiterschaltung
WO2015022860A1 (ja) * 2013-08-12 2015-02-19 日産自動車株式会社 スイッチング装置
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JP6374225B2 (ja) 2014-06-02 2018-08-15 ルネサスエレクトロニクス株式会社 半導体装置および電子装置
US9722581B2 (en) 2014-07-24 2017-08-01 Eaton Corporation Methods and systems for operating hybrid power devices using driver circuits that perform indirect instantaneous load current sensing
US9397657B1 (en) 2014-07-24 2016-07-19 Eaton Corporation Methods and systems for operating hybrid power devices using multiple current-dependent switching patterns
CN106688183B (zh) * 2014-09-11 2020-08-21 三菱电机株式会社 自灭弧式半导体元件的短路保护电路
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WO2016103328A1 (ja) * 2014-12-22 2016-06-30 三菱電機株式会社 スイッチング装置、モータ駆動装置、電力変換装置およびスイッチング方法
JP2016135070A (ja) 2015-01-22 2016-07-25 株式会社デンソー 制御装置
JP6172175B2 (ja) * 2015-02-09 2017-08-02 トヨタ自動車株式会社 スイッチング回路及び半導体装置
JP6398872B2 (ja) * 2015-05-27 2018-10-03 株式会社デンソー 駆動装置
JP6528575B2 (ja) * 2015-07-17 2019-06-12 富士電機株式会社 半導体スイッチング装置
JP6413965B2 (ja) * 2015-07-20 2018-10-31 株式会社デンソー 半導体装置
JP6252561B2 (ja) * 2015-07-28 2017-12-27 トヨタ自動車株式会社 電気回路
KR101970112B1 (ko) * 2015-08-07 2019-04-17 미쓰비시덴키 가부시키가이샤 파워 스위칭 장치
JP6468150B2 (ja) * 2015-09-29 2019-02-13 株式会社デンソー 負荷駆動装置
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JP6319276B2 (ja) * 2015-11-20 2018-05-09 トヨタ自動車株式会社 スイッチング回路
JP6561794B2 (ja) 2015-11-20 2019-08-21 トヨタ自動車株式会社 スイッチング回路
JP6524020B2 (ja) * 2016-05-19 2019-06-05 三菱電機株式会社 遅延時間補正回路、半導体デバイス駆動回路および半導体装置
JP6831752B2 (ja) 2016-06-08 2021-02-17 パナソニック株式会社 基板電圧制御回路
JP6739865B2 (ja) * 2016-06-22 2020-08-12 日産自動車株式会社 半導体装置
JP6623958B2 (ja) * 2016-07-12 2019-12-25 株式会社デンソー 駆動対象スイッチの駆動回路
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JP6638628B2 (ja) * 2016-11-25 2020-01-29 株式会社デンソー ゲート駆動装置
JP6601372B2 (ja) * 2016-11-25 2019-11-06 株式会社デンソー ゲート駆動装置
WO2018096890A1 (ja) * 2016-11-25 2018-05-31 株式会社デンソー ゲート駆動装置
JP6669638B2 (ja) * 2016-11-29 2020-03-18 トヨタ自動車株式会社 スイッチング回路
JP6656414B2 (ja) * 2016-12-12 2020-03-04 三菱電機株式会社 半導体装置の駆動方法および駆動回路
JP6925605B2 (ja) * 2017-01-12 2021-08-25 株式会社Ｊｏｌｅｄ 駆動回路
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JP6912560B2 (ja) * 2017-04-19 2021-08-04 三菱電機株式会社 半導体モジュールおよび電力変換装置
JP6930361B2 (ja) * 2017-10-20 2021-09-01 株式会社デンソー スイッチの駆動回路
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JP7205091B2 (ja) * 2018-07-18 2023-01-17 富士電機株式会社 半導体装置
JP6836207B2 (ja) * 2018-08-06 2021-02-24 株式会社デンソー 駆動回路
JP6573016B2 (ja) * 2018-09-27 2019-09-11 株式会社デンソー 半導体装置
JP2019024312A (ja) * 2018-10-04 2019-02-14 株式会社デンソー 制御装置
JP7119872B2 (ja) * 2018-10-09 2022-08-17 株式会社デンソー スイッチの駆動回路
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JP7218629B2 (ja) * 2019-03-15 2023-02-07 株式会社デンソー スイッチング装置
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JP2022167435A (ja) 2021-04-23 2022-11-04 株式会社 日立パワーデバイス 半導体装置及びそれを用いた電力変換装置、半導体装置の製造方法
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Also Published As

Publication number Publication date
DE102012207222A1 (de) 2012-11-08
CN102769375A (zh) 2012-11-07
US8766702B2 (en) 2014-07-01
CN102769375B (zh) 2014-12-24
DE102012207222B4 (de) 2016-05-25
US20120280728A1 (en) 2012-11-08
KR101389811B1 (ko) 2014-04-29
KR20120124031A (ko) 2012-11-12
DE102012025769B3 (de) 2016-07-14
JP2012249509A (ja) 2012-12-13

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