JP6172175B2 - スイッチング回路及び半導体装置 - Google Patents
スイッチング回路及び半導体装置 Download PDFInfo
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- JP6172175B2 JP6172175B2 JP2015023313A JP2015023313A JP6172175B2 JP 6172175 B2 JP6172175 B2 JP 6172175B2 JP 2015023313 A JP2015023313 A JP 2015023313A JP 2015023313 A JP2015023313 A JP 2015023313A JP 6172175 B2 JP6172175 B2 JP 6172175B2
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- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000000034 method Methods 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 36
- 230000007704 transition Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
- H03K17/166—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Description
本明細書または図面に説明した技術要素は、単独あるいは各種の組み合わせによって技術有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの1つの目的を達成すること自体で技術有用性を持つものである。
13 :接続配線
16 :スイッチング回路
18 :IGBT
20 :IGBT
22 :ダイオード
24 :ダイオード
30 :並列回路
40 :ゲート制御回路
50 :制御回路
52 :ゲートオン抵抗
54 :ゲートオフ抵抗
56 :PMOS
58 :NMOS
60 :レベルシフタ
70 :制御回路
72 :ゲートオン抵抗
74 :ゲートオフ抵抗
76 :PMOS
78 :NMOS
80 :レベルシフタ
90 :ロジック制御回路
92 :モータ
100 :半導体基板
Claims (2)
- 第1IGBTと第2IGBTの並列回路が挿入されている配線と、
前記第1IGBTと前記第2IGBTを個々に制御する制御装置を備えており、
前記制御装置が、
ターンオンタイミングとターンオフタイミングを示す信号の入力を受け、
前記ターンオンタイミングで前記第1IGBTと前記第2IGBTの双方をオンさせ、前記ターンオフタイミングで前記第1IGBTと前記第2IGBTの双方をオフさせる第1制御手順と、
前記ターンオンタイミングで前記第1IGBTをオンさせ、前記ターンオフタイミングで前記第1IGBTをオフさせ、前記ターンオフタイミングに先立って前記第2IGBTをオフにしておく第2制御手順を備えており、
前記配線を流れる電流が閾値よりも大きいときは前記第1制御手順を実施し、
前記配線を流れる電流が前記閾値よりも小さいときは前記第2制御手順を実施し、
前記第2制御手順では、前記ターンオンタイミングで前記第2IGBTをオンさせず、
前記第1IGBTと前記第2IGBTが共通の半導体基板に形成されており、
前記第2IGBTが前記半導体基板の中央を含む範囲に形成されており、
前記第1IGBTが前記第2IGBTの周囲に形成されている、
スイッチング回路。 - 第1IGBTと第2IGBTの並列回路が挿入されている配線と、
前記第1IGBTと前記第2IGBTを個々に制御する制御装置を備えており、
前記制御装置が、
ターンオンタイミングとターンオフタイミングを示す信号の入力を受け、
前記ターンオンタイミングで前記第1IGBTと前記第2IGBTの双方をオンさせ、前記ターンオフタイミングで前記第1IGBTと前記第2IGBTの双方をオフさせる第1制御手順と、
前記ターンオンタイミングで前記第1IGBTをオンさせ、前記ターンオフタイミングで前記第1IGBTをオフさせ、前記ターンオフタイミングに先立って前記第2IGBTをオフにしておく第2制御手順を備えており、
前記配線を流れる電流が閾値よりも大きいときは前記第1制御手順を実施し、
前記配線を流れる電流が前記閾値よりも小さいときは前記第2制御手順を実施し、
前記第2制御手順では、前記ターンオンタイミング以降で前記ターンオフタイミングより前の期間の一部で前記第2IGBTをオンさせ、
前記第1IGBTと前記第2IGBTが共通の半導体基板に形成されており、
前記第2IGBTが前記半導体基板の中央を含む範囲に形成されており、
前記第1IGBTが前記第2IGBTの周囲に形成されている、
スイッチング回路。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015023313A JP6172175B2 (ja) | 2015-02-09 | 2015-02-09 | スイッチング回路及び半導体装置 |
CN201511030906.9A CN105871363A (zh) | 2015-02-09 | 2015-12-31 | 开关电路及半导体装置 |
US14/988,425 US20160233858A1 (en) | 2015-02-09 | 2016-01-05 | Switching circuit and semiconductor device |
DE102016101339.0A DE102016101339A1 (de) | 2015-02-09 | 2016-01-26 | Schaltschaltung und halbleitervorrichtung |
KR1020160014099A KR20160098060A (ko) | 2015-02-09 | 2016-02-04 | 스위칭 회로 및 반도체 장치 |
KR1020170083150A KR20170082142A (ko) | 2015-02-09 | 2017-06-30 | 스위칭 회로 및 반도체 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015023313A JP6172175B2 (ja) | 2015-02-09 | 2015-02-09 | スイッチング回路及び半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016146717A JP2016146717A (ja) | 2016-08-12 |
JP6172175B2 true JP6172175B2 (ja) | 2017-08-02 |
Family
ID=56498670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015023313A Expired - Fee Related JP6172175B2 (ja) | 2015-02-09 | 2015-02-09 | スイッチング回路及び半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20160233858A1 (ja) |
JP (1) | JP6172175B2 (ja) |
KR (2) | KR20160098060A (ja) |
CN (1) | CN105871363A (ja) |
DE (1) | DE102016101339A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6319276B2 (ja) | 2015-11-20 | 2018-05-09 | トヨタ自動車株式会社 | スイッチング回路 |
JP6561794B2 (ja) | 2015-11-20 | 2019-08-21 | トヨタ自動車株式会社 | スイッチング回路 |
JP6724706B2 (ja) * | 2016-10-11 | 2020-07-15 | 株式会社デンソー | スイッチング素子の駆動回路 |
JP6669638B2 (ja) * | 2016-11-29 | 2020-03-18 | トヨタ自動車株式会社 | スイッチング回路 |
US10439485B2 (en) | 2018-01-17 | 2019-10-08 | Ford Global Technologies, Llc | DC inverter having reduced switching loss for paralleled phase leg switches |
JP7210912B2 (ja) | 2018-06-27 | 2023-01-24 | 株式会社デンソー | スイッチング素子駆動装置 |
JP7119872B2 (ja) * | 2018-10-09 | 2022-08-17 | 株式会社デンソー | スイッチの駆動回路 |
JP7103139B2 (ja) * | 2018-10-09 | 2022-07-20 | 株式会社デンソー | スイッチの駆動回路 |
JP7188331B2 (ja) * | 2019-09-16 | 2022-12-13 | 株式会社デンソー | スイッチング素子駆動装置 |
US11290088B2 (en) * | 2020-02-19 | 2022-03-29 | Eaton Intelligent Power Limited | Drivers for paralleled semiconductor switches |
KR20210148638A (ko) * | 2020-06-01 | 2021-12-08 | 코웨이 주식회사 | 전력변환장치, 이를 포함하는 전기레인지 및 그 제어방법 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04280475A (ja) * | 1991-03-08 | 1992-10-06 | Fuji Electric Co Ltd | 半導体スイッチング装置 |
US7253540B1 (en) * | 2000-03-15 | 2007-08-07 | Ct Concept Technologie Ag | Method for operating a parallel arrangement of semiconductor power switches |
JP4120329B2 (ja) | 2002-09-19 | 2008-07-16 | 富士電機デバイステクノロジー株式会社 | 電圧駆動型半導体素子のゲート駆動装置 |
JP4069022B2 (ja) * | 2003-06-12 | 2008-03-26 | 三菱電機株式会社 | 電力用半導体装置 |
JP2007074771A (ja) * | 2005-09-05 | 2007-03-22 | Nissan Motor Co Ltd | 電圧駆動型スイッチング回路、多相インバータ装置、および、電圧駆動型スイッチング制御方法 |
TWI348270B (en) * | 2008-05-21 | 2011-09-01 | Niko Semiconductor Co Ltd | A negative voltage switching apparatus |
JP2009284640A (ja) * | 2008-05-21 | 2009-12-03 | Toyota Motor Corp | 半導体素子駆動装置及び電圧変換装置 |
EP2182551A1 (en) * | 2008-10-29 | 2010-05-05 | ABB Research Ltd. | Connection arrangement for semiconductor power modules |
JP5250895B2 (ja) * | 2009-01-22 | 2013-07-31 | 三菱電機株式会社 | 半導体装置 |
DE102009041019A1 (de) * | 2009-09-10 | 2011-06-22 | Siemens Aktiengesellschaft, 80333 | Ansteuerverfahren für hart parallel geschaltete abschaltbare Leistungshalbleiterschalter |
US8600595B2 (en) * | 2010-07-29 | 2013-12-03 | GM Global Technology Operations LLC | Power module active current management for efficiency improvement |
JP5854895B2 (ja) * | 2011-05-02 | 2016-02-09 | 三菱電機株式会社 | 電力用半導体装置 |
JP5767018B2 (ja) * | 2011-05-17 | 2015-08-19 | トヨタ自動車株式会社 | 絶縁ゲート型スイッチング素子のゲートの電位を制御する回路 |
CN102355246A (zh) * | 2011-05-18 | 2012-02-15 | 中国兵器工业集团第二一四研究所苏州研发中心 | 一种高速dac电流源开关驱动电路 |
JP6510310B2 (ja) * | 2014-05-12 | 2019-05-08 | ローム株式会社 | 半導体装置 |
-
2015
- 2015-02-09 JP JP2015023313A patent/JP6172175B2/ja not_active Expired - Fee Related
- 2015-12-31 CN CN201511030906.9A patent/CN105871363A/zh active Pending
-
2016
- 2016-01-05 US US14/988,425 patent/US20160233858A1/en not_active Abandoned
- 2016-01-26 DE DE102016101339.0A patent/DE102016101339A1/de not_active Withdrawn
- 2016-02-04 KR KR1020160014099A patent/KR20160098060A/ko not_active Application Discontinuation
-
2017
- 2017-06-30 KR KR1020170083150A patent/KR20170082142A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR20160098060A (ko) | 2016-08-18 |
DE102016101339A1 (de) | 2016-08-11 |
CN105871363A (zh) | 2016-08-17 |
JP2016146717A (ja) | 2016-08-12 |
KR20170082142A (ko) | 2017-07-13 |
US20160233858A1 (en) | 2016-08-11 |
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