JP5823138B2 - 窒化物半導体デバイス - Google Patents
窒化物半導体デバイス Download PDFInfo
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- JP5823138B2 JP5823138B2 JP2011036493A JP2011036493A JP5823138B2 JP 5823138 B2 JP5823138 B2 JP 5823138B2 JP 2011036493 A JP2011036493 A JP 2011036493A JP 2011036493 A JP2011036493 A JP 2011036493A JP 5823138 B2 JP5823138 B2 JP 5823138B2
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- 239000004065 semiconductor Substances 0.000 title claims description 63
- 150000004767 nitrides Chemical class 0.000 title description 98
- 230000004888 barrier function Effects 0.000 claims description 270
- 239000000463 material Substances 0.000 claims description 53
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 481
- 238000000034 method Methods 0.000 description 55
- 230000008569 process Effects 0.000 description 35
- 238000004519 manufacturing process Methods 0.000 description 30
- 239000000758 substrate Substances 0.000 description 24
- 238000005530 etching Methods 0.000 description 17
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000011065 in-situ storage Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 230000005533 two-dimensional electron gas Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
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Description
2 緩衝層
3 III族窒化物チャネル層
4 III族窒化物障壁層
4−1 第1部分
4−2 第2部分
5 pドープIII族窒化物ゲート層部
5−1 その場pドープゲート層
5−2 その場pドープゲート層
6 不活性化層
7 マスク
8 2次元電子ガス(2−DEG)
10 ゲートコンタクト
11 ソース電極
12 ドレイン電極
13 ショットキ接触
13−1 ショットキ金属層
15 マスク
17 カバー層
18 凹部
41 第1のIII族窒化物障壁層
42 第2のIII族窒化物障壁層
100 デバイス(エンハンスメントモードデバイス)
200 デバイス
300 デバイス
400 ディプレッションモードデバイス
Claims (3)
- AlaGa1−aN(0≦a≦1)からなる非ドープチャネル層(3)と、
非ドープ障壁層であって、
前記チャネル層(3)上にAlb1Ga1−b1N(0≦b1≦1;a<b1)とAlc1In1−c1N(0≦c1≦1;a<c1)からなる群から選択される材料を含む少なくとも1つの第1の障壁層(41)であって、前記第1の障壁層(41)は、前記チャネル層(3)より高いバンドギャップを有し、前記チャネル層(3)とヘテロ接合を形成する、第1の障壁層(41)と、
前記第1の障壁層(41)の別の部分上のそれに接したAlb2Ga1−b2N(0≦b2≦1;a<b2)とAlc2In1−c2N(0≦c2≦1;a<c2)からなる群から選択される材料を含む少なくとも1つの第2の障壁層(42)であって、前記障壁層(4)は、前記障壁層(4)の第2部分(4−2)より薄い厚さを有する第1部分(4−1)を含む、第2の障壁層(42)と、
を含む非ドープ障壁層と、
前記障壁層(4)の前記第1部分(4−1)上のそれに接するAlzGa1−zN(0≦z≦1)を含むpドープゲート層(5)であって、前記pドープゲート層(5)は前記第1の障壁層(41)の一部上にそれに接して配置され、前記第2の障壁層(42)を部分的に覆う、pドープゲート層(5)と、
前記pドープゲート層(5)上のゲートコンタクト(10)と、
ソース電極(11)と、
前記ソース電極(11)から離れて配置されたドレイン電極(12)と、
を含む半導体デバイス。 - b1≠b2、c1≠c2である、請求項1に記載のデバイス。
- 前記第1の障壁層(41)は前記第2の障壁層(42)の厚さと異なる厚さを有する、請求項1または2に記載のデバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/713,336 US20110210377A1 (en) | 2010-02-26 | 2010-02-26 | Nitride semiconductor device |
US12/713,336 | 2010-02-26 |
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JP2013259335A Division JP2014116607A (ja) | 2010-02-26 | 2013-12-16 | 窒化物半導体デバイス |
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JP2011181922A JP2011181922A (ja) | 2011-09-15 |
JP5823138B2 true JP5823138B2 (ja) | 2015-11-25 |
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JP2013259335A Pending JP2014116607A (ja) | 2010-02-26 | 2013-12-16 | 窒化物半導体デバイス |
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US (3) | US20110210377A1 (ja) |
JP (2) | JP5823138B2 (ja) |
DE (1) | DE102011000911B4 (ja) |
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US8969912B2 (en) | 2011-08-04 | 2015-03-03 | Avogy, Inc. | Method and system for a GaN vertical JFET utilizing a regrown channel |
US9136116B2 (en) * | 2011-08-04 | 2015-09-15 | Avogy, Inc. | Method and system for formation of P-N junctions in gallium nitride based electronics |
JP5878317B2 (ja) * | 2011-08-08 | 2016-03-08 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2013077635A (ja) * | 2011-09-29 | 2013-04-25 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
US8669591B2 (en) * | 2011-12-27 | 2014-03-11 | Eta Semiconductor Inc. | E-mode HFET device |
US9887139B2 (en) | 2011-12-28 | 2018-02-06 | Infineon Technologies Austria Ag | Integrated heterojunction semiconductor device and method for producing an integrated heterojunction semiconductor device |
JP2013157407A (ja) * | 2012-01-27 | 2013-08-15 | Fujitsu Semiconductor Ltd | 化合物半導体装置及びその製造方法 |
JP5662367B2 (ja) * | 2012-03-26 | 2015-01-28 | 株式会社東芝 | 窒化物半導体装置およびその製造方法 |
US9111905B2 (en) * | 2012-03-29 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | High electron mobility transistor and method of forming the same |
KR101922120B1 (ko) * | 2012-07-19 | 2018-11-26 | 삼성전자주식회사 | 고전자이동도 트랜지스터 및 그 제조방법 |
JP6087552B2 (ja) * | 2012-09-21 | 2017-03-01 | トランスフォーム・ジャパン株式会社 | 化合物半導体装置及びその製造方法 |
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US20210313462A1 (en) | 2021-10-07 |
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