JP2011181922A - 窒化物半導体デバイス - Google Patents
窒化物半導体デバイス Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 162
- 239000004065 semiconductor Substances 0.000 title claims description 66
- 230000004888 barrier function Effects 0.000 claims abstract description 342
- 238000000034 method Methods 0.000 claims abstract description 63
- 239000000463 material Substances 0.000 claims description 59
- 238000004519 manufacturing process Methods 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 481
- 230000008569 process Effects 0.000 description 35
- 239000000758 substrate Substances 0.000 description 24
- 230000008021 deposition Effects 0.000 description 10
- 238000011065 in-situ storage Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
【解決手段】 一実施形態では、デバイスはIII族窒化物チャネル層(3)とIII族窒化物チャネル層(3)上のIII族窒化物障壁層(4)とを含み、III族窒化物障壁層(4)は第1部分(4−1)と第2部分(4−2)とを含み、第1部分(4−1)は第2部分(4−2)より薄い厚さを有する。pドープIII族窒化物ゲート層部(5)は、III族窒化物障壁層(4)の少なくとも第1部分(4−1)上に配置され、ゲートコンタクト(10)はpドープIII族窒化物ゲート層部(5)上に形成される。
【選択図】 図1
Description
2 緩衝層
3 III族窒化物チャネル層
4 III族窒化物障壁層
4−1 第1部分
4−2 第2部分
5 pドープIII族窒化物ゲート層部
5−1 その場pドープゲート層
5−2 その場pドープゲート層
6 不活性化層
7 マスク
8 2次元電子ガス(2−DEG)
10 ゲートコンタクト
11 ソース電極
12 ドレイン電極
13 ショットキ接触
13−1 ショットキ金属層
15 マスク
17 カバー層
18 凹部
41 第1のIII族窒化物障壁層
42 第2のIII族窒化物障壁層
100 デバイス(エンハンスメントモードデバイス)
200 デバイス
300 デバイス
400 ディプレッションモードデバイス
Claims (25)
- III族窒化物チャネル層(3)と、
前記III族窒化物チャネル層(3)上のIII族窒化物障壁層(4)であって、前記III族窒化物障壁層(4)は第1部分(4−1)と第2部分(4−2)を含み、前記第1部分(4−1)は前記第2部分(4−2)より薄い厚さを有する、III族窒化物障壁層(4)と、
前記III族窒化物障壁層(4)の前記第1部分(4−1)上に少なくとも配置されたpドープIII族窒化物ゲート層部(5)と、
前記pドープIII族窒化物ゲート層部(5)上のゲートコンタクト(10)と、
ソース電極(11)と、
前記ソース電極(11)から離れて配置されたドレイン電極(12)と、を含む半導体デバイス。 - 前記III族窒化物障壁層(4)は、
前記III族窒化物チャネル層(3)上の少なくとも1つの第1のIII族窒化物障壁層(41)であって、前記pドープIII族窒化物ゲート層部(5)が少なくとも前記第1のIII族窒化物障壁層(41)上にそれに接して配置される、第1のIII族窒化物障壁層(41)と、
前記第1のIII族窒化物障壁層(41)上にそれに接して配置された少なくとも1つの第2のIII族窒化物障壁層(42)と、を含む、請求項1に記載のデバイス。 - 前記第1のIII族窒化物障壁層(41)は前記第2のIII族窒化物障壁層(42)のAl含有量と異なるAl含有量を含む、請求項2に記載のデバイス。
- 前記第1のIII族窒化物障壁層(41)は前記pドープIII族窒化物ゲート層部(5)のAl含有量と異なるAl含有量を含む、請求項2または3に記載のデバイス。
- 前記第2のIII族窒化物障壁層(42)もまた前記pドープIII族窒化物ゲート層部(5)上に配置される、請求項2〜4のいずれか一項に記載のデバイス。
- 前記第2のIII族窒化物障壁層(42)は、前記第1のIII族窒化物障壁層(41)まで及ぶとともに前記III族窒化物障壁層(4)の凹部を画定する開口を含み、前記pドープIII族窒化物ゲート層部(5)は前記開口に配置される、請求項2〜5のいずれか一項に記載のデバイス。
- 前記第1部分(4−1)は前記III族窒化物障壁層(4)の凹部(18)を画定する、請求項1〜6のいずれか一項に記載のデバイス。
- 前記pドープIII族窒化物ゲート層部(5)と前記III族窒化物障壁層(4)の前記第1部分(4−1)間のゲート誘電体層をさらに含む請求項1〜7のいずれか一項に記載のデバイス。
- III族窒化物チャネル層(3)と、
前記III族窒化物チャネル層(3)上の少なくとも1つの第1のIII族窒化物障壁層(41)と、
前記第1のIII族窒化物障壁層(41)上のゲート層部(5)であって、pドープIII族窒化物半導体とショットキ接触形成金属からなる群から選択される材料を含むゲート層部(5)と、
前記ゲート層部(5)に隣接する前記第1のIII族窒化物障壁層(41)上の少なくとも1つの第2のIII族窒化物障壁層(42)と、
前記III族窒化物チャネル層(3)と前記第1のIII族窒化物障壁層(41)間の接合における2−DEG層(8)と、
前記ゲート層部(5)上のゲートコンタクト(10)と、
前記2−DEG層(8)と電気的に接触したソース電極(11)と、
前記2−DEG層(8)と電気的に接触しかつ前記ソース電極(11)から離れて配置されるドレイン電極(12)と、を含む半導体デバイス。 - 前記第1のIII族窒化物障壁層(41)は前記第2のIII族窒化物障壁層(42)のAl含有量と異なるAl含有量を含む、請求項9に記載のデバイス。
- 前記第2のIII族窒化物障壁層(42)は開口を含み、前記ゲート層部(5)は前記開口内に配置される、請求項9または10に記載のデバイス。
- AlaGa1−aN (0≦a≦1)からなる非ドープチャネル層(3)と、
前記チャネル層(3)上にAlbGa1−bN(0≦b≦1;a<b)とAlcIn1−cN(0≦c≦1;a<c)からなる群から選択される材料を含む非ドープ障壁層(4)であって、前記障壁層(4)は前記チャネル層(3)より高いバンドギャップを有し、前記チャネル層(3)とヘテロ接合を形成し、前記障壁層(4)の第2部分(4−2)より薄い厚さを有する第1部分(4−1)を含む、障壁層(4)と、
前記障壁層(4)の前記第1部分(4−1)上のそれに接するAlzGa1−zN(0≦z≦1)を含むpドープゲート層(5)と、
前記pドープゲート層(5)上のゲートコンタクト(10)と、
ソース電極(11)と、
前記ソース電極(11)から離れて配置されたドレイン電極(12)と、を含む半導体デバイス。 - 前記障壁層(4)は、
前記チャネル層(3)上にAlb1Ga1−b1N(0≦b1≦1;a<b1)とAlc1In1−c1N(0≦c1≦1;a<c1)からなる群から選択される材料を含む少なくとも1つの第1の障壁層(41)であって、前記第1の障壁層(41)は前記チャネル層(3)より高いバンドギャップを有し前記チャネル層(3)とヘテロ接合を形成し、前記pドープゲート層(5)は前記第1の障壁層(41)の一部上にそれに接して配置された、第1の障壁層(41)と、
前記第1の障壁層(41)の別の部分上のそれに接したAlb2Ga1−b2N(0≦b2≦1;a<b2)とAlc2In1−c2N(0≦c2≦1;a<c2)からなる群から選択される材料を含む少なくとも1つの第2の障壁層(42)と、を含む、請求項12に記載のデバイス。 - b1≠b2、c1≠c2である、請求項13に記載のデバイス。
- 前記第1の障壁層(41)は前記第2の障壁層(42)の厚さと異なる厚さを有する、請求項13または14に記載のデバイス。
- 半導体デバイスの製造方法であって、
III族窒化物チャネル層(3)を設ける工程と、
前記III族窒化物チャネル層(3)上に第1部分(4−1)と第2部分(4−2)を含むIII族窒化物障壁層(4)を形成する工程であって、前記第1部分(4−1)は前記第2部分(4−2)より薄い厚さを有する、工程と、
前記III族窒化物障壁層(4)の少なくとも前記第1部分(4−1)上にpドープIII族窒化物ゲート層部(5)を形成する工程と、
前記pドープIII族窒化物ゲート層部(5)上にゲートコンタクト(10)を形成する工程と、
ソース電極(11)を形成する工程と、
前記ソース電極(11)から離れたドレイン電極(12)を形成する工程と、を含む方法。 - III族窒化物チャネル層(3)上に少なくとも1つの第1のIII族窒化物障壁層(41)を形成する工程と、
前記第1のIII族窒化物障壁層(41)上にそれに接してpドープIII族窒化物ゲート層部(5)を形成する工程と、
前記第1のIII族窒化物障壁層(41)上にそれに接して少なくとも1つの第2のIII族窒化物障壁層(42)を形成する工程と、をさらに含む請求項16に記載の方法であって、
前記第1および第2のIII族窒化物障壁層は併せて前記III族窒化物障壁層(4)を形成する、方法。 - 前記第1のIII族窒化物障壁層(41)上にpドープIII族窒化物ゲート層(5−1)を形成する工程であって、前記pドープIII族窒化物ゲート層(5−1)は前記第1のIII族窒化物障壁層(41)の材料に対し選択エッチ可能である材料を含む、工程と、
前記第1のIII族窒化物障壁層(41)上に前記pドープIII族窒化物ゲート層部(5)を形成するために前記第1のIII族窒化物障壁層(41)に対し前記pドープIII族窒化物ゲート層(5)を選択的にエッチングする工程と、
前記第2のIII族窒化物障壁層(42)を形成する工程と、を含む請求項17に記載の方法。 - 前記pドープIII族窒化物ゲート層部(5)を画定するために前記pドープIII族窒化物ゲート層(5−1)上にマスク(7)を形成する工程と、
前記マスク(7)を使用して前記pドープIII族窒化物ゲート層(5−1)をエッチングする工程と、を含む請求項18に記載の方法。 - 前記第1のIII族窒化物障壁層(41)のゲート部分(4−1)を露出するために前記第2のIII族窒化物障壁層(42)内に開口を形成する工程と、
前記第2のIII族窒化物障壁層(42)の少なくとも前記開口内に前記pドープIII族窒化物ゲート層部(5)を形成する工程と、を含む請求項17〜19のいずれか一項に記載の方法。 - 前記第1のIII族窒化物障壁層のゲート部分を覆うために前記第1のIII族窒化物障壁層(41)上にマスク(15)を形成する工程であって、前記ゲート部分は前記障壁層(4)の前記第1部分(4−1)を画定する、工程と、
前記第1のIII族窒化物障壁層(41)の覆われていない部分上に前記第2のIII族窒化物障壁層(42)を蒸着する工程と、
前記第1のIII族窒化物障壁層(41)の前記ゲート部分(4−1)を露出するために前記マスク(15)を除去する工程と、
前記第1のIII族窒化物障壁層(41)の前記露出したゲート部分上に前記pドープIII族窒化物ゲート層部(5)を形成する工程と、を含む請求項17〜20のいずれか一項に記載の方法。 - 前記III族窒化物障壁層(4)上にカバー層(17)を形成する工程であって、前記カバー層(17)は前記III族窒化物障壁層(4)の凹部(18)を画定するために少なくとも1つの開口を含む、工程と、
前記III族窒化物障壁層(4)内に前記凹部(18)を形成するために前記III族窒化物障壁層(4)をエッチングする工程と、
前記III族窒化物障壁層(4)の前記凹部(18)内に前記pドープIII族窒化物ゲート層部(5)を形成する工程と、を含む請求項16〜21のいずれか一項に記載の方法。 - 半導体デバイスの形成方法であって、
III族窒化物チャネル層(3)を設ける工程と、
前記III族窒化物チャネル層(3)上に少なくとも1つの第1のIII族窒化物障壁層(41)を形成する工程と、
前記第1のIII族窒化物障壁層(41)上にそれに接してpドープIII族窒化物ゲート層部(5)を形成する工程と、
前記第1のIII族窒化物障壁層(41)上にそれに接して少なくとも1つの第2のIII族窒化物障壁層(42)を形成する工程と、
前記pドープIII族窒化物ゲート層部(5)上にゲートコンタクト(10)を形成する工程と、
ソース電極(11)を形成する工程と、
前記ソース電極(11)から離れたドレイン電極(12)を形成する工程と、を含む方法。 - 前記第1のIII族窒化物障壁層(41)上にpドープIII族窒化物ゲート層(5−1)を形成する工程であって、前記pドープIII族窒化物ゲート層(5−1)は前記第1のIII族窒化物障壁層(41)の材料に対し選択エッチ可能である材料を含む、工程と、
前記pドープIII族窒化物ゲート層(5−1)上にマスク(7)を形成する工程と、
前記pドープIII族窒化物ゲート層部(5)を形成するために前記マスク(7)を使用して前記pドープIII族窒化物ゲート層(5−1)をエッチングする工程と、
前記第2のIII族窒化物障壁層(42)を形成する工程と、を含む請求項23に記載の方法。 - 前記第1のIII族窒化物障壁層(41)のゲート部分(4−1)を覆うために前記第1のIII族窒化物障壁層(41)上にマスク(15)を形成する工程と、
前記第1のIII族窒化物障壁層(41)の覆われていない部分上に前記第2のIII族窒化物障壁層(42)を蒸着する工程と、
前記第1のIII族窒化物障壁層(41)の前記ゲート部分(4−1)を露出するために前記マスク(15)を除去する工程と、
前記第1のIII族窒化物障壁層(41)の前記露出したゲート部分(4−1)上に前記pドープIII族窒化物ゲート層部(5)を形成する工程と、を含む請求項23に記載の方法。
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JP5823138B2 (ja) | 2015-11-25 |
JP2014116607A (ja) | 2014-06-26 |
US20150243775A1 (en) | 2015-08-27 |
US20210313462A1 (en) | 2021-10-07 |
US20110210377A1 (en) | 2011-09-01 |
US11004966B2 (en) | 2021-05-11 |
DE102011000911B4 (de) | 2018-06-28 |
DE102011000911A1 (de) | 2011-09-01 |
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