JP5658214B2 - ハロゲン化オルガノアミノシラン前駆体及びそれを含む膜の堆積方法 - Google Patents
ハロゲン化オルガノアミノシラン前駆体及びそれを含む膜の堆積方法 Download PDFInfo
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- JP5658214B2 JP5658214B2 JP2012215012A JP2012215012A JP5658214B2 JP 5658214 B2 JP5658214 B2 JP 5658214B2 JP 2012215012 A JP2012215012 A JP 2012215012A JP 2012215012 A JP2012215012 A JP 2012215012A JP 5658214 B2 JP5658214 B2 JP 5658214B2
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- alkyl group
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- precursor
- alkynyl
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- 239000002243 precursor Substances 0.000 title claims description 198
- 238000000034 method Methods 0.000 title claims description 133
- 238000000151 deposition Methods 0.000 title claims description 48
- 239000000758 substrate Substances 0.000 claims description 75
- 230000008569 process Effects 0.000 claims description 62
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 59
- 238000000231 atomic layer deposition Methods 0.000 claims description 59
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 57
- 125000000041 C6-C10 aryl group Chemical group 0.000 claims description 56
- 125000000217 alkyl group Chemical group 0.000 claims description 56
- 229910052710 silicon Inorganic materials 0.000 claims description 55
- 239000010703 silicon Substances 0.000 claims description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 51
- 238000010926 purge Methods 0.000 claims description 50
- 125000003342 alkenyl group Chemical group 0.000 claims description 46
- 125000000304 alkynyl group Chemical group 0.000 claims description 45
- 239000000203 mixture Substances 0.000 claims description 41
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 35
- 229910052760 oxygen Inorganic materials 0.000 claims description 35
- 239000001301 oxygen Substances 0.000 claims description 35
- 230000008021 deposition Effects 0.000 claims description 34
- 238000005229 chemical vapour deposition Methods 0.000 claims description 33
- 239000007789 gas Substances 0.000 claims description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims description 30
- -1 halogenated organo amino silane Chemical compound 0.000 claims description 28
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 27
- 125000004122 cyclic group Chemical group 0.000 claims description 26
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 229910052801 chlorine Inorganic materials 0.000 claims description 24
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 22
- 229910052794 bromium Inorganic materials 0.000 claims description 21
- 229910052740 iodine Inorganic materials 0.000 claims description 21
- 125000006710 (C2-C12) alkenyl group Chemical group 0.000 claims description 19
- 125000006711 (C2-C12) alkynyl group Chemical group 0.000 claims description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 16
- MLANFFQADVEXAD-UHFFFAOYSA-N chloro-(2,6-dimethylpiperidin-1-yl)silane Chemical compound CC1CCCC(C)N1[SiH2]Cl MLANFFQADVEXAD-UHFFFAOYSA-N 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HBYPAVLOJPHNAF-UHFFFAOYSA-N dichloro-(2,6-dimethylpiperidin-1-yl)silane Chemical group CC1CCCC(C)N1[SiH](Cl)Cl HBYPAVLOJPHNAF-UHFFFAOYSA-N 0.000 claims description 11
- XTFIVUDBNACUBN-UHFFFAOYSA-N 1,3,5-trinitro-1,3,5-triazinane Chemical compound [O-][N+](=O)N1CN([N+]([O-])=O)CN([N+]([O-])=O)C1 XTFIVUDBNACUBN-UHFFFAOYSA-N 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 9
- 125000005843 halogen group Chemical group 0.000 claims description 9
- 238000005137 deposition process Methods 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 7
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 239000007800 oxidant agent Substances 0.000 claims description 4
- POTIYWUALSJREP-UHFFFAOYSA-N 1,2,3,4,4a,5,6,7,8,8a-decahydroquinoline Chemical compound N1CCCC2CCCCC21 POTIYWUALSJREP-UHFFFAOYSA-N 0.000 claims description 3
- BHNHHSOHWZKFOX-UHFFFAOYSA-N 2-methyl-1H-indole Chemical compound C1=CC=C2NC(C)=CC2=C1 BHNHHSOHWZKFOX-UHFFFAOYSA-N 0.000 claims description 3
- VPZDAHBNTYZYHC-UHFFFAOYSA-N chlorosilylamine Chemical compound N[SiH2]Cl VPZDAHBNTYZYHC-UHFFFAOYSA-N 0.000 claims description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims description 2
- LRMQYUBGCZKBKB-UHFFFAOYSA-N N-chlorosilyl-2-cyclohexylethanamine Chemical compound Cl[SiH2]NCCC1CCCCC1 LRMQYUBGCZKBKB-UHFFFAOYSA-N 0.000 claims 8
- RVUTUEKLTCAHQU-UHFFFAOYSA-N N-[chloro(cyclohexyl)silyl]propan-2-amine Chemical compound CC(C)N[SiH](Cl)C1CCCCC1 RVUTUEKLTCAHQU-UHFFFAOYSA-N 0.000 claims 7
- KLAXFLZPRMNAHI-UHFFFAOYSA-N N-chlorosilyl-1-cyclohexylmethanamine Chemical compound Cl[SiH2]NCC1CCCCC1 KLAXFLZPRMNAHI-UHFFFAOYSA-N 0.000 claims 7
- JKYXESHSZQOZDZ-UHFFFAOYSA-N 3,4,4a,5-tetrahydro-2H-quinolin-1-yl(chloro)silane Chemical compound C1C=CC=C2N([SiH2]Cl)CCCC21 JKYXESHSZQOZDZ-UHFFFAOYSA-N 0.000 claims 2
- WXAACUHLCXNAAR-UHFFFAOYSA-N C1=CC=C2N([SiH2]Cl)C(C)=CC2=C1 Chemical compound C1=CC=C2N([SiH2]Cl)C(C)=CC2=C1 WXAACUHLCXNAAR-UHFFFAOYSA-N 0.000 claims 2
- UBGALEFWHAJNST-UHFFFAOYSA-N C1=CC=C2N([SiH2]Cl)C3=CC=CC=C3C2=C1 Chemical compound C1=CC=C2N([SiH2]Cl)C3=CC=CC=C3C2=C1 UBGALEFWHAJNST-UHFFFAOYSA-N 0.000 claims 2
- ZZMASGZSOSWKID-UHFFFAOYSA-N C1=CC=C2N([SiH2]Cl)C=CC2=C1 Chemical compound C1=CC=C2N([SiH2]Cl)C=CC2=C1 ZZMASGZSOSWKID-UHFFFAOYSA-N 0.000 claims 2
- HUROELJKHKIICW-UHFFFAOYSA-N C1CCCCC1N([SiH2]Cl)C1CCCCC1 Chemical compound C1CCCCC1N([SiH2]Cl)C1CCCCC1 HUROELJKHKIICW-UHFFFAOYSA-N 0.000 claims 2
- JGSSJLUIZPUTNB-UHFFFAOYSA-N N-chlorosilyl-1-(3-methylphenyl)methanamine Chemical compound CC1=CC=CC(CN[SiH2]Cl)=C1 JGSSJLUIZPUTNB-UHFFFAOYSA-N 0.000 claims 2
- IKGPFXUZZUSHET-UHFFFAOYSA-N chloro(piperidin-1-yl)silane Chemical compound N1(CCCCC1)[SiH2]Cl IKGPFXUZZUSHET-UHFFFAOYSA-N 0.000 claims 2
- SMUQFGGVLNAIOZ-UHFFFAOYSA-N quinaldine Chemical compound C1=CC=CC2=NC(C)=CC=C21 SMUQFGGVLNAIOZ-UHFFFAOYSA-N 0.000 claims 2
- VVSCXHNYIFWKCX-UHFFFAOYSA-N C1=CC=C2C(C)=CN([SiH2]Cl)C2=C1 Chemical compound C1=CC=C2C(C)=CN([SiH2]Cl)C2=C1 VVSCXHNYIFWKCX-UHFFFAOYSA-N 0.000 claims 1
- YYMIFDCCNHYQPP-UHFFFAOYSA-N C1=CC=C2N([SiH2]Cl)C(C)CCC2=C1 Chemical compound C1=CC=C2N([SiH2]Cl)C(C)CCC2=C1 YYMIFDCCNHYQPP-UHFFFAOYSA-N 0.000 claims 1
- ZBSLYPXPLZWKKL-UHFFFAOYSA-N CN[SiH2]Cl Chemical compound CN[SiH2]Cl ZBSLYPXPLZWKKL-UHFFFAOYSA-N 0.000 claims 1
- 241000222336 Ganoderma Species 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000005019 vapor deposition process Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 129
- 239000002904 solvent Substances 0.000 description 33
- 238000009835 boiling Methods 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 24
- 239000000460 chlorine Substances 0.000 description 19
- 150000004820 halides Chemical group 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 125000003118 aryl group Chemical group 0.000 description 13
- 239000000377 silicon dioxide Substances 0.000 description 13
- 239000007788 liquid Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 239000000047 product Substances 0.000 description 11
- 239000003153 chemical reaction reagent Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 9
- 125000003545 alkoxy group Chemical group 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000003054 catalyst Substances 0.000 description 9
- 239000003638 chemical reducing agent Substances 0.000 description 9
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 7
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 7
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 7
- 239000005052 trichlorosilane Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 6
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000007062 hydrolysis Effects 0.000 description 6
- 238000006460 hydrolysis reaction Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 5
- 239000005046 Chlorosilane Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000009833 condensation Methods 0.000 description 5
- 230000005494 condensation Effects 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 150000003335 secondary amines Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 150000003512 tertiary amines Chemical class 0.000 description 5
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 150000001408 amides Chemical class 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 4
- 239000003446 ligand Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000012686 silicon precursor Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- 238000005292 vacuum distillation Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000000443 aerosol Substances 0.000 description 3
- 150000004703 alkoxides Chemical class 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000003618 dip coating Methods 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 239000000976 ink Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 150000002825 nitriles Chemical class 0.000 description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000011541 reaction mixture Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 238000003828 vacuum filtration Methods 0.000 description 3
- LBUJPTNKIBCYBY-UHFFFAOYSA-N 1,2,3,4-tetrahydroquinoline Chemical compound C1=CC=C2CCCNC2=C1 LBUJPTNKIBCYBY-UHFFFAOYSA-N 0.000 description 2
- LISDBLOKKWTHNH-UHFFFAOYSA-N 1,3,5-Trisilacyclohexan Natural products C1[SiH2]C[SiH2]C[SiH2]1 LISDBLOKKWTHNH-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- RXYPXQSKLGGKOL-UHFFFAOYSA-N 1,4-dimethylpiperazine Chemical compound CN1CCN(C)CC1 RXYPXQSKLGGKOL-UHFFFAOYSA-N 0.000 description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 description 2
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 2
- PUNGSQUVTIDKNU-UHFFFAOYSA-N 2,4,6,8,10-pentamethyl-1,3,5,7,9,2$l^{3},4$l^{3},6$l^{3},8$l^{3},10$l^{3}-pentaoxapentasilecane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O[Si](C)O1 PUNGSQUVTIDKNU-UHFFFAOYSA-N 0.000 description 2
- SDGKUVSVPIIUCF-UHFFFAOYSA-N 2,6-dimethylpiperidine Chemical compound CC1CCCC(C)N1 SDGKUVSVPIIUCF-UHFFFAOYSA-N 0.000 description 2
- GTEXIOINCJRBIO-UHFFFAOYSA-N 2-[2-(dimethylamino)ethoxy]-n,n-dimethylethanamine Chemical compound CN(C)CCOCCN(C)C GTEXIOINCJRBIO-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- PFNHSEQQEPMLNI-UHFFFAOYSA-N 2-methyl-1-pentanol Chemical compound CCCC(C)CO PFNHSEQQEPMLNI-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- KTRLOZVAGCGQMN-UHFFFAOYSA-N CC(C)N([SiH3])C1CCCCC1 Chemical compound CC(C)N([SiH3])C1CCCCC1 KTRLOZVAGCGQMN-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- RZKSECIXORKHQS-UHFFFAOYSA-N Heptan-3-ol Chemical compound CCCCC(O)CC RZKSECIXORKHQS-UHFFFAOYSA-N 0.000 description 2
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- OJGMBLNIHDZDGS-UHFFFAOYSA-N N-Ethylaniline Chemical compound CCNC1=CC=CC=C1 OJGMBLNIHDZDGS-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- OQLNRLSREPYVEN-UHFFFAOYSA-N N-methyl-N-silylcyclohexanamine Chemical compound CN([SiH3])C1CCCCC1 OQLNRLSREPYVEN-UHFFFAOYSA-N 0.000 description 2
- AFBPFSWMIHJQDM-UHFFFAOYSA-N N-methylaniline Chemical compound CNC1=CC=CC=C1 AFBPFSWMIHJQDM-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- 238000000560 X-ray reflectometry Methods 0.000 description 2
- 235000011054 acetic acid Nutrition 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
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Images
Classifications
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Description
本願は、2011年9月27日付け出願の米国仮特許出願第61/539,717号の35U.S.C.§119に基づく優先権の利益を主張するものであり、当該米国仮特許出願の開示はその参照により全体として本明細書に含まれる。
XmR1 nHpSi(NR2R3)4-m-n-p I
を有するケイ素前駆体を含み、式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない。幾つかの実施形態では、式I中のR2とR3は互いに連結されて環を形成することができる。他の実施形態では、式I中のR2とR3は、環を形成するために互いに連結されない。
反応チャンバー内に基材の少なくとも1つの表面を提供する工程と;
以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
を有するハロゲン化オルガノアミノシラン前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)を用いて、化学気相成長プロセス及び原子層堆積プロセスから選択される堆積プロセスにより前記少なくとも1つの表面上にケイ素含有膜を形成する工程と
を含む方法が提供される。式Iの1つの特定の実施形態では、R2とR3は互いに連結されて環を形成することができる。式Iの別の実施形態では、R2とR3は環を形成するために連結されない。
a.反応装置内に基材を用意する工程と;
b.反応装置内に以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
で表される少なくとも1つのハロゲン化オルガノアミノシラン前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)から選択される少なくとも1つのケイ素前駆体を導入する工程と;
c.反応装置をパージガスでパージする工程と;
d.反応装置内に酸素源を導入する工程と;
e.反応装置をパージガスでパージする工程と;
膜の所望の厚さが得られるまで工程b〜eを繰り返す工程と
を含む方法が提供される。
a.反応装置内に基材を用意する工程と;
b.反応装置内に以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
で表される少なくとも1つのハロゲン化オルガノアミノシラン前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)を導入する工程と;
c.酸素源を提供して前記少なくとも1つの表面上に酸化ケイ素膜を堆積させる工程と
を含む方法が提供される。
a.反応装置内に基材を用意する工程と;
b.反応装置内に以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
で表される少なくとも1つのケイ素前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)を導入する工程と;
c.反応装置をパージガスでパージする工程と;
d.反応装置内に窒素含有源を導入する工程と;
e.反応装置をパージガスでパージする工程と;
窒化ケイ素膜の所望の厚さが得られるまで工程b〜eを繰り返す工程と
を含む方法が提供される。
a.反応装置内に基材を用意する工程と;
b.反応装置内に式I
XmR1 nHpSi(NR2R3)4-m-n-p I
で表される少なくとも1つのオルガノアミノシラン前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)を導入する工程と;
c.窒素含有源を提供し、少なくとも1つのオルガノアミノシラン前駆体と窒素含有源を反応させて前記少なくとも1つの表面上にケイ素と窒素の両方を含む膜を堆積させる工程と
を含む方法が提供される。
XmR1 nHpSi(NR2R3)4-m-n-p I
(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)と;
エーテル、第3級アミン、ニトリル、アルキル炭化水素、芳香族炭化水素、第3級アミノエーテル又はそれらの混合物からなる群より選択される溶媒と
を含む組成物が提供される。
XmR1 nHpSi(NR2R3)4-m-n-p I
で表される幾つかの前駆体又はハロゲン化オルガノアミノシラン(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)が提供される。式Iのハロゲン化オルガノアミノシランの幾つかの実施形態では、R2とR3は、互いに連結されて環を形成することができる。式Iのハロゲン化オルガノアミノシランの変形実施形態では、R2とR3は、環を形成するために互いに連結されていない。
(R2R3N)SiH3 (III)
(式中、R2は、直鎖又は分岐C1−C10アルキル、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基そしてC6−C10アリール基から選択され、ここでR2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)を有する化合物である。式IIIの幾つかの実施形態では、R2とR3は組合わされて環状基又は環を形成できる。式IIIの他の実施形態では、R2とR3は、環状基又は環を形成するために組み合わされない。非ハロゲン化ケイ素含有前駆体の例としては、ジ−イソ−プロピルアミノシラン、ジ−sec−ブチルアミノシラン、フェニルメチルアミノシラン及び2,6−ジメチルピペリジノシランが挙げられるがそれらに限定されない。
ALD反応装置内に基材を用意する工程と;
ALD反応装置内に以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
で表される少なくとも1つのハロゲン化オルガノアミノシラン前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)を導入する工程と;
基材上に少なくとも1つのハロゲン化オルガノアミノシラン前駆体を化学吸着させる工程と;
パージガスを用いて未反応の少なくとも1つのオルガノアミノシラン前駆体をパージする工程と;
加熱した基材上でオルガノアミノシラン前駆体に窒素含有源を提供して、吸着された少なくとも1つのオルガノアミノシラン前駆体と反応させる工程と;
任意選択で、未反応の窒素含有源をパージする工程と
を含むALD堆積方法を用いて形成される。
反応装置内に基材を用意する工程と;
反応装置内に以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
で表される少なくとも1つのハロゲン化オルガノアミノシラン前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)を導入する工程と;
基材上に少なくとも1つのオルガノアミノシラン前駆体を化学吸着させる工程と;
パージガスを用いて未反応の少なくとも1つのオルガノアミノシラン前駆体をパージする工程と;
加熱した基材上でオルガノアミノシラン前駆体に酸素源を提供して、吸着された少なくとも1つのオルガノアミノシラン前駆体と反応させる工程と;
任意選択で、未反応の酸素源をパージする工程と
を含むALD堆積方法を用いて形成される。
周囲温度から約700℃の温度まで加熱されそして1Torr以下の圧力に維持される反応装置内に1つ又は複数の基材を入れる工程と;
以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
を有する少なくとも1つのハロゲン化オルガノアミノシラン前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル基、及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基、及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)を導入する工程と;
反応装置内に酸素源を提供して少なくとも1つのオルガノアミノシラン前駆体と少なくとも部分的に反応させ、1つ又は複数の基材上に誘電体膜を堆積させる工程と
を含む。CVD法の幾つかの実施形態では、反応装置は、導入工程の際、100mTorr〜600mTorrの圧力に維持される。
周囲温度から約700℃の温度まで加熱されそして1Torr以下の圧力に維持される反応装置内に1つ又は複数の基材を入れる工程と;
以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
を有する少なくとも1つのハロゲン化オルガノアミノシラン前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル基、及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基、及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)を導入する工程と;
反応装置内に窒素含有源を提供して少なくとも1つのオルガノアミノシラン前駆体と少なくとも部分的に反応させ、1つ又は複数の基材上に誘電体膜を堆積させる工程と
を含む。CVD法の幾つかの実施形態では、反応装置は、導入工程の際、100mTorr〜600mTorrの圧力に維持される。
a)第1の前駆体から生成された蒸気を加熱された基材と接触させて、加熱された基材上で第1の前駆体を化学的に吸着させる工程と;
b)未吸着の前駆体がある場合、それをパージする工程と;
c)加熱された基材上に酸素源を導入して、吸着された第1の前駆体と反応させる工程と;
d)未反応の酸素源がある場合、それをパージする工程と;
e)第1の前駆体とは異なるものである第2の前駆体から生成された蒸気を加熱された基材と接触させて、加熱された基材上で第2の前駆体を化学的に吸着させる工程と;
f)未吸着の前駆体がある場合、それをパージする工程と;
g)加熱された基材上に酸素源を導入して、吸着された第1及び第2の前駆体と反応させる工程と;
h)未反応の酸素源がある場合、それをパージする工程と
を含み、所望の厚さに達するまで工程a)〜h)が繰り返されるプロセスが提供される。
a)第1の前駆体から生成された蒸気を加熱された基材と接触させて、加熱された基材上で第1の前駆体を化学的に吸着させる工程と;
b)未吸着の第1の前駆体がある場合、それをパージする工程と;
c)加熱された基材上に窒素源を導入して、吸着された第1の前駆体と反応させる工程と;
d)未反応の窒素源がある場合、それをパージする工程と;
e)第1のものとは異なるものである第2の前駆体から生成された蒸気を加熱された基材と接触させて、加熱された基材上で第2の前駆体を化学的に吸着させる工程と;
f)未吸着の第2の前駆体がある場合、それをパージする工程と;
g)加熱された基材上に窒素源を導入して、吸着された第2の前駆体と反応させる工程と;
h)未反応の窒素源がある場合、それをパージする工程と
を含み、所望の厚さに達するまで工程a)〜h)が繰り返される方法が提供される。
機械式撹拌器及び付加漏斗が備わった2000ml入りの3口丸底フラスコ内に、1000mlのヘキサンを添加した。ドライアイスIPA低温浴を用いて−20℃までフラスコを冷却し、101g(1.0mol)のジクロロシランを凝縮し、ヘキサン中に溶解させた。撹拌しながら、113g(1.0mol)の2,6−ジメチルピペリジンと111g(1.1mol)のトリエチルアミンの混合物をフラスコに対し滴下により添加した。添加を完了した後、反応混合物を1時間−20℃で撹拌し、その後室温まで暖めた。空気中の水分と生成物が反応するのを防ぐため、N2でパージしたグローブバック内での真空濾過によって、HCl・Et3Nの塩副産物沈殿物を除去した。濾液についてのGC/MS分析により、生成物2,6−ジメチルピペリジノクロロシランが確認され、生成物が177の分子イオン質量を有し162の質量MCH3のマスラグメントを担持することが示された。溶媒ヘキサンを蒸留によって除去し、生成物を真空蒸留によって分離した。沸点は10torrで60℃であった。収量は66%であった。
−78℃のTHF50mL中の7.55g(66.68mmol)シス−2,6−ジメチルピペリジンの溶液に対して、ヘキサン中のn−ブチルリチウムの2.5M溶液28.00mL(70.02mmol)を添加した。沈殿物が発生し、反応混合物を撹拌しながら室温まで暖めた。1時間後に、この混合物を、−40℃の30mLのキシレンと70mLのヘキサン中の6.74(66.68mmol)ジクロロシランの溶液に対して滴下にて添加し、薄灰色の沈殿物が形成した。反応混合物を16時間撹拌し、その後、発生した固体からそれを傾瀉し、周囲圧力での蒸留に付して揮発性物質を除去した。収量27%で、3.16gの所望の生成物を分離した。GC/MS分析により、生成物を2,6−ジメチルピペリジノクロロシランとして確認した。
70重量%のヘキサン溶液中においてモル比で1部分の2,6−ジメチルピペルジンと1部分のトリエチルアミンと1.1部分のトリクロロシランとを混合することにより、2,6−ジメチルピペリジノジクロロシランの合成を行なった。ビス(2,6−ジメチルピペリンド)クロロシランの形成を防げるために、余剰量のトリクロロシランが必要であった。空気中の水分と生成物が反応するのを防ぐため、N2でパージしたグローブバッグの中で真空濾過により、HCl・Et3Nの塩副産物沈殿物を除去した。濾液についてのGC/MS分析(これは図1に示されている)により、211の質量を結果としてもたらし196の質量−CH3のマスフラグメントを担持する生成物2,6−ジメチルピペリジノジクロロシランが生成されたことが確認された。真空濾過の後、第1の工程における単純な蒸留によりヘキサン総量を除去した。第2の工程では、真空蒸留技術を使用し、生成物を収集した。真空蒸留から判定した沸点は、18torrで93℃、5torrで66℃である。収量は64%であった。
2,6−ジメチルピペリジノクロロシランという前駆体を用いて、ケイ素含有膜の原子層堆積を実施した。実験室規模のALDプロセス装置上で堆積を行なった。全ての気体(例えばパージガス及び反応物質ガス又は前駆体及び酸素源)は、堆積ゾーンに入る前に100℃に予熱させた。気体及び前駆体の流量は、起動が速いALDダイヤフラムで制御した。堆積において使用した基材は、基材温度を確認するために試料ホルダー上に取付けられた熱電対を有する長さ12インチのケイ素ストリップであった。酸素源気体としてオゾンを用いて堆積を実施し、堆積のプロセスパラメータを表2に提供する。
Claims (17)
- 化学気相成長プロセス及び原子層堆積プロセスから選択される堆積プロセスにより基材の少なくとも1つの表面上に誘電体膜を形成するための方法であって、
反応チャンバー内に基材の少なくとも1つの表面を提供する工程と;
以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
を有する少なくとも1つのハロゲン化オルガノアミノシラン前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成している)を導入する工程と;
反応チャンバー内に窒素含有源を導入し、少なくとも1つのハロゲン化オルガノアミノシラン前駆体と窒素含有源を反応させて前記少なくとも1つの表面上に誘電体膜を形成させる工程と
を含み、少なくとも1つのハロゲン化オルガノアミノシラン前駆体が、2,6−ジメチルピペリジノジクロロシラン、2,6−ジメチルピペリジノクロロシラン、シクロヘキシルメチルアミノクロロシラン、シクロヘキシルエチルアミノクロロシラン、及びシクロヘキシル−イソ−プロピルアミノクロロシランからなる群より選択される、方法。 - 原子層堆積(ALD)プロセスによって誘電体膜を形成する方法であって、
a.ALD反応装置内に基材を用意する工程と;
b.ALD反応装置内に以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
を有する少なくとも1つのハロゲン化オルガノアミノシラン前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)を提供する工程と;
c.ALD反応装置を不活性ガスでパージする工程と;
d.ALD反応装置内に窒素含有源を提供する工程と;
e.ALD反応装置を不活性ガスでパージする工程と;
誘電体膜の所望の厚さが得られるまで工程b〜eを繰り返す工程と
を含み、少なくとも1つのハロゲン化オルガノアミノシラン前駆体が、2,6−ジメチルピペリジノジクロロシラン、2,6−ジメチルピペリジノクロロシラン、シクロヘキシルメチルアミノクロロシラン、シクロヘキシルエチルアミノクロロシラン、及びシクロヘキシル−イソ−プロピルアミノクロロシランからなる群より選択される、方法。 - 窒素含有源が、アンモニア、ヒドラジン、モノアルキルヒドラジン、ジアルキルヒドラジン、窒素、窒素/水素、アンモニアプラズマ、窒素プラズマ、窒素/水素プラズマ、及びそれらの混合物からなる群より選択される、請求項1又は2に記載の方法。
- プラズマ強化原子層堆積(PEALD)プロセスを用いて基材の少なくとも1つの表面上に誘電体膜を形成する方法であって、
a.ALD反応装置内に基材を用意する工程と;
b.ALD反応装置内に以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
を有する少なくとも1つのハロゲン化オルガノアミノシラン前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)を提供する工程と;
c.ALD反応装置を不活性ガスでパージする工程と;
d.ALD反応装置内にプラズマ窒素含有源を提供する工程と;
e.ALD反応装置を不活性ガスでパージする工程と;
誘電体膜の所望の厚さが得られるまで工程b〜eを繰り返す工程と
を含み、少なくとも1つのハロゲン化オルガノアミノシラン前駆体が、2,6−ジメチルピペリジノジクロロシラン、2,6−ジメチルピペリジノクロロシラン、シクロヘキシルメチルアミノクロロシラン、シクロヘキシルエチルアミノクロロシラン、及びシクロヘキシル−イソ−プロピルアミノクロロシランからなる群より選択される、方法。 - プラズマ窒素含有源が、アンモニアプラズマ、窒素プラズマ、窒素/水素プラズマ、及びそれらの混合物からなる群より選択される、請求項4に記載の方法。
- 誘電体膜が、窒化ケイ素及び炭窒化ケイ素からなる群より選択される、請求項1、2又は4に記載の方法。
- 基材上に酸化ケイ素膜を形成するための方法であって、気相堆積プロセスにおいて、以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
で表される少なくとも1つのハロゲン化オルガノアミノシラン前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成している)と酸化剤を反応させて、基材上に酸化ケイ素膜を形成する工程を含み、少なくとも1つのハロゲン化オルガノアミノシラン前駆体が、2,6−ジメチルピペリジノジクロロシラン、2,6−ジメチルピペリジノクロロシラン、シクロヘキシルメチルアミノクロロシラン、シクロヘキシルエチルアミノクロロシラン、及びシクロヘキシル−イソ−プロピルアミノクロロシランからなる群より選択される、方法。 - 気相堆積が、化学気相成長、低圧気相成長、プラズマ強化化学気相成長、サイクリック化学気相成長、プラズマ強化サイクリック化学気相成長、原子層堆積、及びプラズマ強化原子層堆積から選択される少なくとも1つである、請求項7に記載の方法。
- 基材上に酸化ケイ素膜を形成するための方法であって、以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
を有する少なくとも1つのハロゲン化オルガノアミノシラン前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)を含む組成物及び少なくとも1つの酸化剤から、気相堆積によって基材上に酸化ケイ素膜を形成する工程
を含み、気相堆積が、化学気相成長、低圧気相成長、プラズマ強化化学気相成長、サイクリック化学気相成長、プラズマ強化サイクリック化学気相成長、原子層堆積、及びプラズマ強化原子層堆積から選択される少なくとも1つであり、少なくとも1つのハロゲン化オルガノアミノシラン前駆体が、2,6−ジメチルピペリジノジクロロシラン、2,6−ジメチルピペリジノクロロシラン、シクロヘキシルメチルアミノクロロシラン、シクロヘキシルエチルアミノクロロシラン、及びシクロヘキシル−イソ−プロピルアミノクロロシランからなる群より選択される、方法。 - 基材上に酸化ケイ素膜を形成するための方法であって、
反応装置内に以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
で表されるハロゲン化オルガノアミノシラン(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成しているか又はR2とR3は環を形成するために連結されていない)を導入する工程と;
反応装置内に少なくとも1つの酸化剤を導入し、少なくとも1つの酸化剤をオルガノアミノシランと反応させて基材上に酸化ケイ素膜を形成する工程と
を含み、ハロゲン化オルガノアミノシランが、2,6−ジメチルピペリジノクロロシラン、2,6−ジメチルピペリジノジクロロシラン、ジシクロヘキシルアミノクロロシラン、シクロヘキシルメチルアミノクロロシラン、シクロヘキシルエチルアミノクロロシラン、シクロヘキシル−イソ−プロピルアミノクロロシラン、N−(クロロシリル)ペルヒドロキノリン、フェニルアリルアミノクロロシラン、m−トリルメチルアミノクロロシラン、N−(クロロシリル)カルバゾール、N−(クロロシリル)−テトラヒドロキノリン、N−(クロロシリル)インドール、N−(クロロシリル)−2−メチルインドール、N−(クロロシリル)−3−メチルインドール及びN−(クロロシリル)−1,2,3,4−テトラヒドロ−2−メチルキノリンからなる群より選択される、方法。 - 基材上にある厚さを有する酸化ケイ素膜を形成するための方法であって、
a.堆積チャンバー内に以下の式I
XmR1 nHpSi(NR2R3)4-m-n-p I
で表される少なくとも1つのハロゲン化オルガノアミノシラン前駆体(式中、Xは、Cl、Br、Iからなる群より選択されるハロゲン化物であり;R1は、直鎖又は分岐C1−C10アルキル基、C2−C12アルケニル基、C2−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から独立して選択され;R2は、直鎖又は分岐C1−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;R3は、分岐C3−C10アルキル基、C3−C12アルケニル基、C3−C12アルキニル基、C4−C10環状アルキル基及びC6−C10アリール基から選択され;mは1又は2であり;nは0、1又は2であり;pは0、1又は2であり;(m+n+p)の合計は4未満であり、R2とR3は連結されて環を形成している)を導入する工程と;
b.基材上に少なくとも1つのハロゲン化オルガノアミノシラン前駆体を化学吸着させる工程と;
c.パージガスを用いて未反応の少なくとも1つのハロゲン化オルガノアミノシラン前駆体をパージする工程と;
d.加熱した基材上でハロゲン化オルガノアミノシラン前駆体に酸素源を提供して、吸着された少なくとも1つのハロゲン化オルガノアミノシラン前駆体と反応させる工程と;
e.任意選択で、未反応の酸素源をパージする工程と
を含み、少なくとも1つのハロゲン化オルガノアミノシラン前駆体が、2,6−ジメチルピペリジノジクロロシラン、2,6−ジメチルピペリジノクロロシラン、シクロヘキシルメチルアミノクロロシラン、シクロヘキシルエチルアミノクロロシラン、及びシクロヘキシル−イソ−プロピルアミノクロロシランからなる群より選択される、方法。 - 膜の厚さが確立されるまで工程a〜d及び任意選択の工程eが繰り返される、請求項11に記載の方法。
- 少なくとも1つのハロゲン化オルガノアミノシラン前駆体が、2,6−ジメチルピペリジノジクロロシランを含む、請求項1、2、4、7、9又は11に記載の方法。
- 少なくとも1つのハロゲン化オルガノアミノシラン前駆体が、2,6−ジメチルピペリジノクロロシランを含む、請求項1、2、4、7、9又は11に記載の方法。
- 原子層堆積プロセスである、請求項11に記載の方法。
- プラズマ強化サイクリック化学気相成長である、請求項11に記載の方法。
- 2,6−ジメチルピペリジノクロロシラン、2,6−ジメチルピペリジノジクロロシラン、ジシクロヘキシルアミノクロロシラン、シクロヘキシルメチルアミノクロロシラン、シクロヘキシルエチルアミノクロロシラン、シクロヘキシル−イソ−プロピルアミノクロロシラン、N−(クロロシリル)ペルヒドロキノリン、フェニルアリルアミノクロロシラン、m−トリルメチルアミノクロロシラン、N−(クロロシリル)カルバゾール、N−(クロロシリル)−テトラヒドロキノリン、N−(クロロシリル)インドール、N−(クロロシリル)−2−メチルインドール、N−(クロロシリル)−3−メチルインドール及びN−(クロロシリル)−1,2,3,4−テトラヒドロ−2−メチルキノリンからなる群より選択される、ハロゲン化オルガノアミノシラン前駆体。
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US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
KR20150034123A (ko) | 2012-07-20 | 2015-04-02 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | Ald/cvd 규소-함유 필름 적용을 위한 유기실란 전구체 |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9564309B2 (en) | 2013-03-14 | 2017-02-07 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US9824881B2 (en) * | 2013-03-14 | 2017-11-21 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US9796739B2 (en) * | 2013-06-26 | 2017-10-24 | Versum Materials Us, Llc | AZA-polysilane precursors and methods for depositing films comprising same |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
TW201509799A (zh) | 2013-07-19 | 2015-03-16 | Air Liquide | 用於ald/cvd含矽薄膜應用之六配位含矽前驅物 |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US9284642B2 (en) * | 2013-09-19 | 2016-03-15 | Asm Ip Holding B.V. | Method for forming oxide film by plasma-assisted processing |
US10453675B2 (en) * | 2013-09-20 | 2019-10-22 | Versum Materials Us, Llc | Organoaminosilane precursors and methods for depositing films comprising same |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
SG11201602301WA (en) * | 2013-09-27 | 2016-04-28 | Antonio Sanchez | Amine substituted trisilylamine and tridisilylamine compounds |
US9905415B2 (en) * | 2013-10-03 | 2018-02-27 | Versum Materials Us, Llc | Methods for depositing silicon nitride films |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US9576790B2 (en) | 2013-10-16 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of boron and carbon containing materials |
US9543140B2 (en) | 2013-10-16 | 2017-01-10 | Asm Ip Holding B.V. | Deposition of boron and carbon containing materials |
US10023958B2 (en) * | 2013-11-22 | 2018-07-17 | Applied Materials, Inc. | Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US9401273B2 (en) | 2013-12-11 | 2016-07-26 | Asm Ip Holding B.V. | Atomic layer deposition of silicon carbon nitride based materials |
JP5852147B2 (ja) * | 2014-01-23 | 2016-02-03 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
JP6584496B2 (ja) * | 2014-05-30 | 2019-10-02 | ダウ シリコーンズ コーポレーション | ジアミノシラン化合物 |
KR101913106B1 (ko) | 2014-05-30 | 2018-10-31 | 다우 실리콘즈 코포레이션 | 모노아미노실란 화합물 |
KR102065329B1 (ko) * | 2014-05-30 | 2020-01-13 | 다우 실리콘즈 코포레이션 | 다이아이소프로필아미노-다이실란의 합성 공정 |
US10113234B2 (en) * | 2014-07-21 | 2018-10-30 | Applied Materials, Inc. | UV assisted silylation for porous low-k film sealing |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9576792B2 (en) | 2014-09-17 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of SiN |
WO2016049154A1 (en) * | 2014-09-23 | 2016-03-31 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Carbosilane substituted amine precursors for deposition of si-containing films and methods thereof |
US9875888B2 (en) * | 2014-10-03 | 2018-01-23 | Applied Materials, Inc. | High temperature silicon oxide atomic layer deposition technology |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
WO2016094711A2 (en) | 2014-12-13 | 2016-06-16 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Organosilane precursors for ald/cvd silicon-containing film applications and methods of using the same |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US9520295B2 (en) * | 2015-02-03 | 2016-12-13 | Lam Research Corporation | Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems |
CN107406978B (zh) * | 2015-02-06 | 2019-12-03 | 弗萨姆材料美国有限责任公司 | 用于碳掺杂含硅膜的组合物以及使用所述组合物的方法 |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
CN107430991A (zh) | 2015-02-23 | 2017-12-01 | 应用材料公司 | 用于形成高质量薄膜的循环连续工艺 |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
EP3310942B1 (en) * | 2015-06-16 | 2022-07-13 | Versum Materials US, LLC | Processes for depositing silicon-containing films |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US20180202042A1 (en) * | 2015-07-09 | 2018-07-19 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Alkylamino-substituted halocarbosilane precursors |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10745808B2 (en) * | 2015-07-24 | 2020-08-18 | Versum Materials Us, Llc | Methods for depositing Group 13 metal or metalloid nitride films |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US10410857B2 (en) | 2015-08-24 | 2019-09-10 | Asm Ip Holding B.V. | Formation of SiN thin films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
EP3347504A1 (en) * | 2015-09-11 | 2018-07-18 | Air Products and Chemicals, Inc. | Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
JP6594768B2 (ja) * | 2015-12-25 | 2019-10-23 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体 |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10053775B2 (en) | 2015-12-30 | 2018-08-21 | L'air Liquide, Societé Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude | Methods of using amino(bromo)silane precursors for ALD/CVD silicon-containing film applications |
US9701695B1 (en) | 2015-12-30 | 2017-07-11 | American Air Liquide, Inc. | Synthesis methods for amino(halo)silanes |
US9777373B2 (en) | 2015-12-30 | 2017-10-03 | American Air Liquide, Inc. | Amino(iodo)silane precursors for ALD/CVD silicon-containing film applications and methods of using the same |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
TWI753794B (zh) | 2016-03-23 | 2022-01-21 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 形成含矽膜之組成物及其製法與用途 |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
KR102362462B1 (ko) * | 2016-03-29 | 2022-02-14 | 도쿄엘렉트론가부시키가이샤 | 피처리체를 처리하는 방법 |
KR102549308B1 (ko) * | 2016-03-29 | 2023-06-30 | 도쿄엘렉트론가부시키가이샤 | 에칭 장치 |
JP6784530B2 (ja) * | 2016-03-29 | 2020-11-11 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
JP6770848B2 (ja) | 2016-03-29 | 2020-10-21 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
KR102441431B1 (ko) * | 2016-06-06 | 2022-09-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 표면을 갖는 기판을 프로세싱 챔버에 포지셔닝하는 단계를 포함하는 프로세싱 방법 |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10381226B2 (en) | 2016-07-27 | 2019-08-13 | Asm Ip Holding B.V. | Method of processing substrate |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
CN107794515B (zh) * | 2016-09-01 | 2021-06-22 | Asm Ip控股有限公司 | 通过形成基于烃的超薄膜对层进行保护的方法 |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10464953B2 (en) * | 2016-10-14 | 2019-11-05 | Versum Materials Us, Llc | Carbon bridged aminosilane compounds for high growth rate silicon-containing films |
CN109890997A (zh) * | 2016-10-25 | 2019-06-14 | 巴斯夫欧洲公司 | 产生薄含硅膜的方法 |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
JP6857503B2 (ja) * | 2017-02-01 | 2021-04-14 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
KR102323894B1 (ko) * | 2017-04-05 | 2021-11-08 | 이상인 | 초임계 유체를 사용하는 전구체의 스프레이에 의한 물질의 증착 |
US11117161B2 (en) | 2017-04-05 | 2021-09-14 | Nova Engineering Films, Inc. | Producing thin films of nanoscale thickness by spraying precursor and supercritical fluid |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US11056353B2 (en) | 2017-06-01 | 2021-07-06 | Asm Ip Holding B.V. | Method and structure for wet etch utilizing etch protection layer comprising boron and carbon |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
KR20200065007A (ko) * | 2017-10-04 | 2020-06-08 | 디아이씨 가부시끼가이샤 | 입자, 잉크 및 발광 소자 |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102103346B1 (ko) * | 2017-11-15 | 2020-04-22 | 에스케이트리켐 주식회사 | 박막 증착용 전구체 용액 및 이를 이용한 박막 형성 방법. |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
KR102597978B1 (ko) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치 |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10640523B2 (en) | 2018-01-12 | 2020-05-05 | Entegris, Inc. | Aminoiodosilanes and methods of synthesizing these aminoiodosilanes |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
CN111630203A (zh) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | 通过等离子体辅助沉积来沉积间隙填充层的方法 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
CN111699278B (zh) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
US10580645B2 (en) | 2018-04-30 | 2020-03-03 | Asm Ip Holding B.V. | Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors |
KR20190128558A (ko) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조 |
KR20190129718A (ko) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
TWI819010B (zh) | 2018-06-27 | 2023-10-21 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法 |
KR20210027265A (ko) | 2018-06-27 | 2021-03-10 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 막 및 구조체 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
JP7265446B2 (ja) * | 2018-08-10 | 2023-04-26 | 住友精化株式会社 | アミノシラン化合物、前記アミノシラン化合物を含むシリコン含有膜形成用の組成物 |
CN110824599B (zh) | 2018-08-14 | 2021-09-03 | 白金科技股份有限公司 | 一种红外带通滤波器 |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
JP6980624B2 (ja) * | 2018-09-13 | 2021-12-15 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
EP3680245A4 (en) * | 2018-11-30 | 2020-07-22 | Hansol Chemical Co., Ltd | SILICON PRECURSOR AND METHOD FOR PRODUCING A THIN FILM CONTAINING SILICON USING THEREOF |
KR102157137B1 (ko) | 2018-11-30 | 2020-09-17 | 주식회사 한솔케미칼 | 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법 |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
KR20210104123A (ko) * | 2018-12-21 | 2021-08-24 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 550℃ 이상의 온도에서 ald를 사용하여 si-함유 막을 증착시키기 위한 전구체 및 방법 |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
JP2021019198A (ja) | 2019-07-19 | 2021-02-15 | エーエスエム・アイピー・ホールディング・ベー・フェー | トポロジー制御されたアモルファスカーボンポリマー膜の形成方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP2021097227A (ja) | 2019-12-17 | 2021-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化バナジウム層および窒化バナジウム層を含む構造体を形成する方法 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
EP4065746A4 (en) * | 2019-12-27 | 2023-06-28 | Versum Materials US, LLC | Method for depositing a film |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
TW202129068A (zh) | 2020-01-20 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 形成薄膜之方法及修飾薄膜表面之方法 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
CN111233513A (zh) * | 2020-02-12 | 2020-06-05 | 南京医科大学 | 一种氧化锆陶瓷修复体粘接面的改性方法 |
TW202146715A (zh) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於生長磷摻雜矽層之方法及其系統 |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
KR20210132605A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202200837A (zh) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
KR20220027026A (ko) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
KR20220081905A (ko) | 2020-12-09 | 2022-06-16 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 증착용 실리콘 전구체 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
TW202231643A (zh) * | 2020-12-24 | 2022-08-16 | 南韓商Up化學有限公司 | 使用上表面改性劑來形成膜的方法 |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CS267800B1 (cs) | 1988-12-19 | 1990-02-12 | Jan Ing Csc Janiga | Sposob přípravy trisdietylaminosilíciumchloridu |
CA1336596C (en) * | 1989-07-26 | 1995-08-08 | Constantine A. Stewart | Organosilane compounds |
JP3282769B2 (ja) * | 1994-07-12 | 2002-05-20 | ソニー株式会社 | 半導体装置の製造方法 |
EP0894802B1 (en) | 1997-07-31 | 2002-11-06 | Nippon Mitsubishi Oil Corporation | Silane compound |
EP0902031A3 (en) * | 1997-08-28 | 1999-10-06 | Dow Corning Corporation | Aminosilanes and method of preparation |
US6413647B1 (en) | 2000-02-28 | 2002-07-02 | Jsr Corporation | Composition for film formation, method of film formation, and silica-based film |
US7005392B2 (en) * | 2001-03-30 | 2006-02-28 | Advanced Technology Materials, Inc. | Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same |
US7084080B2 (en) | 2001-03-30 | 2006-08-01 | Advanced Technology Materials, Inc. | Silicon source reagent compositions, and method of making and using same for microelectronic device structure |
JP4054957B2 (ja) * | 2001-12-07 | 2008-03-05 | 信越化学工業株式会社 | テトラキス(ジメチルアミノ)シランの塩素分低減方法 |
JP2005534485A (ja) * | 2002-08-02 | 2005-11-17 | アメリカ合衆国 | 架橋した一酸化窒素−放出ポリアミン被覆基質、それを含む組成物及びその製造方法 |
US6893750B2 (en) | 2002-12-12 | 2005-05-17 | General Electric Company | Thermal barrier coating protected by alumina and method for preparing same |
JP4954448B2 (ja) | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 有機金属化合物 |
US7524735B1 (en) | 2004-03-25 | 2009-04-28 | Novellus Systems, Inc | Flowable film dielectric gap fill process |
US7582555B1 (en) | 2005-12-29 | 2009-09-01 | Novellus Systems, Inc. | CVD flowable gap fill |
US7332618B2 (en) | 2004-09-28 | 2008-02-19 | Praxair Technology, Inc. | Organometallic precursor compounds |
US7875556B2 (en) | 2005-05-16 | 2011-01-25 | Air Products And Chemicals, Inc. | Precursors for CVD silicon carbo-nitride and silicon nitride films |
US7358194B2 (en) | 2005-08-18 | 2008-04-15 | Tokyo Electron Limited | Sequential deposition process for forming Si-containing films |
US7875312B2 (en) | 2006-05-23 | 2011-01-25 | Air Products And Chemicals, Inc. | Process for producing silicon oxide films for organoaminosilane precursors |
US7498273B2 (en) | 2006-05-30 | 2009-03-03 | Applied Materials, Inc. | Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes |
US8318966B2 (en) * | 2006-06-23 | 2012-11-27 | Praxair Technology, Inc. | Organometallic compounds |
US20080207007A1 (en) | 2007-02-27 | 2008-08-28 | Air Products And Chemicals, Inc. | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films |
JP5119832B2 (ja) | 2007-09-27 | 2013-01-16 | 富士通株式会社 | 界面ラフネス緩和膜、配線層、半導体装置および半導体装置の製造方法 |
US7943531B2 (en) | 2007-10-22 | 2011-05-17 | Applied Materials, Inc. | Methods for forming a silicon oxide layer over a substrate |
JP5547418B2 (ja) * | 2009-03-19 | 2014-07-16 | 株式会社Adeka | 化学気相成長用原料及びこれを用いたシリコン含有薄膜形成方法 |
EP2730676A1 (en) | 2010-04-01 | 2014-05-14 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method for deposition of silicon nitride layers |
US20120277457A1 (en) * | 2010-10-12 | 2012-11-01 | Air Products And Chemicals, Inc. | Aminosilanes and methods for making same |
EP3929326A3 (en) * | 2011-06-03 | 2022-03-16 | Versum Materials US, LLC | Compositions and processes for depositing carbon-doped silicon-containing films |
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CN103012457B (zh) | 2018-02-09 |
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