JP5549568B2 - 光半導体素子封止用樹脂組成物及び当該組成物で封止した光半導体装置 - Google Patents

光半導体素子封止用樹脂組成物及び当該組成物で封止した光半導体装置 Download PDF

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JP5549568B2
JP5549568B2 JP2010273206A JP2010273206A JP5549568B2 JP 5549568 B2 JP5549568 B2 JP 5549568B2 JP 2010273206 A JP2010273206 A JP 2010273206A JP 2010273206 A JP2010273206 A JP 2010273206A JP 5549568 B2 JP5549568 B2 JP 5549568B2
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optical semiconductor
composition
resin composition
semiconductor element
mass
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JP2011144360A (ja
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利夫 塩原
努 柏木
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Shin Etsu Chemical Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8583—Means for heat extraction or cooling not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
    • H10W72/884—
    • H10W74/473—
    • H10W90/736—
    • H10W90/756—

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
JP2010273206A 2009-12-15 2010-12-08 光半導体素子封止用樹脂組成物及び当該組成物で封止した光半導体装置 Active JP5549568B2 (ja)

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JP2009283736 2009-12-15
JP2009283736 2009-12-15
JP2010273206A JP5549568B2 (ja) 2009-12-15 2010-12-08 光半導体素子封止用樹脂組成物及び当該組成物で封止した光半導体装置

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JP2011144360A JP2011144360A (ja) 2011-07-28
JP2011144360A5 JP2011144360A5 (enExample) 2011-12-08
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US (1) US8610293B2 (enExample)
EP (1) EP2336230A1 (enExample)
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KR (1) KR101607108B1 (enExample)
CN (1) CN102153863B (enExample)
TW (1) TWI486400B (enExample)

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JP2011144360A (ja) 2011-07-28
US20110140289A1 (en) 2011-06-16
CN102153863B (zh) 2014-12-17
KR20110068867A (ko) 2011-06-22
TW201137042A (en) 2011-11-01
KR101607108B1 (ko) 2016-03-29
EP2336230A1 (en) 2011-06-22
TWI486400B (zh) 2015-06-01
CN102153863A (zh) 2011-08-17
US8610293B2 (en) 2013-12-17

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