JP6707369B2 - シリコーン材料、硬化性シリコーン組成物、および光デバイス - Google Patents
シリコーン材料、硬化性シリコーン組成物、および光デバイス Download PDFInfo
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- JP6707369B2 JP6707369B2 JP2016040279A JP2016040279A JP6707369B2 JP 6707369 B2 JP6707369 B2 JP 6707369B2 JP 2016040279 A JP2016040279 A JP 2016040279A JP 2016040279 A JP2016040279 A JP 2016040279A JP 6707369 B2 JP6707369 B2 JP 6707369B2
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- 239000000203 mixture Substances 0.000 title claims description 77
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- QYLFHLNFIHBCPR-UHFFFAOYSA-N 1-ethynylcyclohexan-1-ol Chemical compound C#CC1(O)CCCCC1 QYLFHLNFIHBCPR-UHFFFAOYSA-N 0.000 description 2
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- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
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- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- CEBKHWWANWSNTI-UHFFFAOYSA-N 2-methylbut-3-yn-2-ol Chemical compound CC(C)(O)C#C CEBKHWWANWSNTI-UHFFFAOYSA-N 0.000 description 1
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- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
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- 125000001246 bromo group Chemical group Br* 0.000 description 1
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- 125000003493 decenyl group Chemical group [H]C([*])=C([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- RCNRJBWHLARWRP-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane;platinum Chemical compound [Pt].C=C[Si](C)(C)O[Si](C)(C)C=C RCNRJBWHLARWRP-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
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- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 125000005065 undecenyl group Chemical group C(=CCCCCCCCCC)* 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/02—Polysilicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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Description
本発明のシリコーン材料は、X線光電子分光法(ESCA)によるシリコーン材料表面の元素組成百分率において、
(i)炭素原子の元素組成百分率が50.0〜70.0atom%であるか、
(ii)炭素原子の元素組成百分率とケイ素原子の元素組成百分率の比(C/Si)が2.0〜5.0であるか、または
(iii)前記(i)および(ii)のいずれも満たすことを特徴とする。
本発明のシリコーン材料を形成する硬化性シリコーン組成物の硬化機構は限定されず、例えば、付加反応、縮合反応、ラジカル反応が例示され、好ましくは、付加反応である。
(A)平均組成式:
R2 aSiO[(4−a)/2]
(式中、R2は独立に、炭素数1〜12のアルキル基、炭素数2〜12のアルケニル基、炭素数6〜20のアリール基、または炭素数7〜20のアラルキル基、但し、アルケニル基は全R2の1〜20モル%であり、アリール基は全R2の多くとも40モル%であり、aは1≦a<2を満たす数である。)
で表されるオルガノポリシロキサン、
(B)一分子中に少なくとも2個のケイ素原子結合水素原子を有するオルガノポリシロキサン{(A)成分中のアルケニル基の合計1モルに対して、本成分中のケイ素原子結合水素原子が0.1〜5モルとなる量}、および
(C)ヒドロシリル化反応用触媒(本組成物の硬化を促進する量)
から少なくともなるものが好ましい。
R2 aSiO[(4−a)/2]
で表されるオルガノポリシロキサンである。
HMe2SiO(Ph2SiO)mSiMe2H
HMePhSiO(Ph2SiO)mSiMePhH
HMePhSiO(Ph2SiO)m(MePhSiO)nSiMePhH
HMePhSiO(Ph2SiO)m(Me2SiO)nSiMePhH
(HMe2SiO1/2)b(PhSiO3/2)c
(HMePhSiO1/2)b(PhSiO3/2)c
(HMePhSiO1/2)b(HMe2SiO1/2)c(PhSiO3/2)d
(HMe2SiO1/2)b(Ph2SiO2/2)c(PhSiO3/2)d
(HMePhSiO1/2)b(Ph2SiO2/2)c(PhSiO3/2)d
(HMePhSiO1/2)b(HMe2SiO1/2)c(Ph2SiO2/2)d(PhSiO3/2)e
本発明の光デバイスは、上記のシリコーン材料により光素子が封止されてなることを特徴とする。本発明の光デバイスにおける光素子は限定されないが、フォトカプラー、発光ダイオード、固体撮像素子が例示され、好ましくは、発光ダイオードである。このような本発明の光デバイスを図1および図2を用いて詳細に説明する。
X線光電子分光(X−ray Photoelectron Spectroscopy)によりシリコーン材料表面の原子組成百分率を測定した。なお、測定は、Kratos Analytical社製のAXIS Novaを用いた。また、使用したX線の励起源は、Al−K α線を使用し、150W、モノクロメーターを使用し、分析面積は0.4mm×0.9mmとした。サーベイスキャン測定によって、C1s、O1s、N1s、F1sのピーク面積を求め、各元素に対するXPSの相対感度にて補正してうえで、原子組成百分率を求めた。得られた原子組成百分率の値から、C原子の比率、およびSi原子に対するC原子の割合を求めた。
下記の成分を用いて、表1に示した組成(質量部)で硬化性シリコーン組成物を調製した。なお、表1中、(C)成分の含有量を、質量単位における、硬化性シリコーン組成物に対する白金金属の含有量(ppm)で示した。また、表1中のSiH/Viは、硬化性シリコーン組成物において、(A)成分中のビニル基1モルに対する、(B)成分中のケイ素原子結合水素原子のモル数の値である。なお、式中、Me、Ph、Vi、Epはそれぞれ、メチル基、フェニル基、ビニル基、3−グリシドキシプロピル基を表す。
(a−1)成分:平均組成式:
Me1.62Vi0.06Ph0.26SiO1.03
で表されるオルガノポリシロキサン(ビニル基の含有量=3.1モル%、フェニル基の含有量=13.4モル%)
(a−2)成分:平均組成式:
Me1.14Vi0.14Ph0.26SiO1.22
で表されるオルガノポリシロキサン(ビニル基の含有量=9.1モル%、フェニル基の含有量=16.9モル%)
(a−3)成分:平均組成式:
Me1.17Vi0.13Ph0.23SiO1.23
で表されるオルガノポリシロキサン(ビニル基の含有量=8.5モル%、フェニル基の含有量=15.0モル%)
(a−4)成分:平均組成式:
Me0.94Vi0.18Ph0.44SiO1.22
で表されるオルガノポリシロキサン(ビニル基の含有量=11.5モル%、フェニル基の含有量=28.2モル%)
(a−5)成分:平均組成式:
Me0.68Vi0.34Ph0.73SiO1.11
で表されるオルガノポリシロキサン(ビニル基の含有量=19.4モル%、フェニル基の含有量=41.7モル%)
(a−6)成分:平均組成式:
Me1.78Vi0.04SiO1.09
で表されるオルガノポリシロキサン(ビニル基の含有量=2.2モル%)
(b−1)成分:平均単位式:
(Me2HSiO1/2)0.65(SiO4/2)0.35
で表されるオルガノポリシロキサンレジン
(b−2)成分:式:
HMe2SiOPh2SiOSiMe2H
で表されるオルガノトリシロキサン
(b−3)成分:平均単位式:
(Me2HSiO1/2)0.6(PhSiO3/2)0.4
で表されるオルガノポリシロキサンレジン
(b−4)成分:式:
Me3SiO(MeHSiO)50SiMe3
で表されるオルガノポリシロキサン
(c−1)成分:白金−1,3−ジビニル−1,1,3,3−テトラメチルジシロキサン錯体の1,3,5,7−テトラメチル−1,3,5,7−テトラビニルシクロテトラシロキサンの溶液(白金として0.1質量%含有する溶液)
(d−1)成分:1,3,5,7−テトラメチル−1,3,5,7−テトラビニルシクロテトラシロキサン
(d−2)成分:1−エチニルシクロヘキサノール
(e−1)成分:25℃における粘度が30mPa・sである分子鎖両末端シラノール基封鎖メチルビニルシロキサンオリゴマーと3−グリシドキシプロピルトリメトキシシランの縮合反応物からなる接着付与剤
(e−2)成分:平均単位式:
(Me2ViSiO1/2)0.18(MeEpSiO2/2)0.28(PhSiO3/2)0.54
で表されるオルガノポリシロキサンレジンからなる接着付与剤
セラミック基板にLEDチップを実装したセラミックLED基板を圧縮成型機に設置し、硬化性シリコーン組成物1を金型キャビティに流し込み、120℃5分間加熱圧縮成型することでLEDチップ上にドーム状の封止材を成型した。さらに、150℃で1時間熱硬化を行い、LEDデバイスを作製した。得られたLEDデバイスを85℃85%RHの恒温恒湿オーブン中で700mAの電流を流し、通電点灯テストを行った。規定時間(50時間)以内に、封止材の透過率の低減によるLEDの輝度の低下(通電点灯試験での初期の輝度の90%以下に低下)がなく、また、シリコーン材料にクラックは観察されなかった。
硬化性シリコーン組成物2を用いて、実施例1と同様の方法でLEDデバイスを作製し、通電点灯テストを行った。規定時間(50時間)以内に、封止材の透過率の低減によるLEDの輝度の低下や、シリコーン材料にクラックは観察されなかった。
硬化性シリコーン組成物3を用いて、実施例1と同様の方法でLEDデバイスを作製し、通電点灯テストを行った。規定時間(50時間)以内に、封止材の透過率の低減によるLEDの輝度の低下や、シリコーン材料にクラックは観察されなかった。
硬化性シリコーン組成物4を用いて、実施例1と同様の方法でLEDデバイスを作製し、通電点灯テストを行った。規定時間(50時間)以内に、封止材の透過率の低減によるLEDの輝度の低下や、シリコーン材料にクラックは観察されなかった。
硬化性シリコーン組成物5を用いて、実施例1と同様の方法でLEDデバイスを作製し、通電点灯テストを行った。規定時間(50時間)以内に、封止材の透過率の低減によりLEDデバイスの輝度が低下した。
硬化性シリコーン組成物6を用いて、実施例1と同様の方法でLEDデバイスを作製し、通電点灯テストを行った。しかし、規定時間(50時間)以内でシリコーン材料にクラックが発生した。
2 LED
3 シリコーン材料
4、4’ リードフレーム
5 ボンディングワイヤ
6 光反射材
Claims (5)
- X線光電子分光法(ESCA)によるシリコーン材料表面の元素組成百分率において、(i)炭素原子の元素組成百分率が61.5〜66.7atom%であるか、(ii)炭素原子の元素組成百分率とケイ素原子の元素組成百分率の比(C/Si)が3.4〜4.2であるか、または(iii)前記(i)および(ii)のいずれも満たし、前記シリコーン材料が、
(A)平均組成式:
R 2 a SiO [(4−a)/2]
(式中、R 2 は独立に、炭素数1〜12のアルキル基、炭素数2〜12のアルケニル基、炭素数6〜20のアリール基、または炭素数7〜20のアラルキル基、但し、アルケニル基は全R 2 の1〜20モル%であり、アリール基は全R 2 の多くとも40モル%であり、aは1≦a<2を満たす数である。)
で表されるオルガノポリシロキサン、
(B)一分子中に少なくとも2個のケイ素原子結合水素原子を有するオルガノポリシロキサン{(A)成分中のアルケニル基の合計1モルに対して、本成分中のケイ素原子結合水素原子が0.1〜5モルとなる量}、および
(C)ヒドロシリル化反応用触媒(本組成物の硬化を促進する量)
から少なくともなる硬化性シリコーン組成物の硬化により形成されていることを特徴とするシリコーン材料。 - シリコーン材料が光学材料である、請求項1に記載のシリコーン材料。
- シリコーン材料が光素子の封止材である、請求項1に記載のシリコーン材料。
- 請求項1に記載のシリコーン材料で光素子を封止してなる光デバイス。
- 光素子がLEDである、請求項4に記載の光デバイス。
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TW201917173A (zh) * | 2017-10-20 | 2019-05-01 | 日商道康寧東麗股份有限公司 | 固化性矽組合物以及光半導體裝置 |
CN112119509B (zh) | 2018-05-24 | 2021-08-24 | 大日本印刷株式会社 | 自发光型显示体用或直下型背光源用的密封材料片、自发光型显示体、直下型背光源 |
US20220235251A1 (en) * | 2019-07-03 | 2022-07-28 | Dow Silicones Corporation | Silicone pressure sensitive adhesive composition and methods for the preparation and use thereof |
DE102019211550A1 (de) * | 2019-08-01 | 2021-02-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Gehäuse für ein strahlungsemittierendes bauelement, verfahren zur herstellung eines strahlungsemittierenden bauelements und strahlungsemittierendes bauelement |
WO2022050421A1 (ja) | 2020-09-07 | 2022-03-10 | 積水化学工業株式会社 | インクジェット塗布用及びled保護用硬化性組成物、ledモジュール、ledモジュールの製造方法及びled表示装置 |
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US4418165A (en) * | 1980-06-03 | 1983-11-29 | Dow Corning Corporation | Optically clear silicone compositions curable to elastomers |
JPH11209735A (ja) * | 1998-01-28 | 1999-08-03 | Dow Corning Toray Silicone Co Ltd | フイルム状シリコーンゴム接着剤及び接着方法 |
JP2002314139A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
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JP4494077B2 (ja) * | 2004-04-22 | 2010-06-30 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 光学材料封止用硬化性組成物 |
JP4741230B2 (ja) * | 2004-12-28 | 2011-08-03 | 東レ・ダウコーニング株式会社 | フィルム状シリコーンゴム接着剤 |
WO2006127100A1 (en) * | 2005-05-26 | 2006-11-30 | Dow Corning Corporation | Process and silicone encapsulant composition for molding small shapes |
TWI361205B (en) * | 2006-10-16 | 2012-04-01 | Rohm & Haas | Heat stable aryl polysiloxane compositions |
JP2009062446A (ja) * | 2007-09-06 | 2009-03-26 | Momentive Performance Materials Japan Kk | 硬化性シリコーン組成物 |
US8017246B2 (en) * | 2007-11-08 | 2011-09-13 | Philips Lumileds Lighting Company, Llc | Silicone resin for protecting a light transmitting surface of an optoelectronic device |
JP5549568B2 (ja) * | 2009-12-15 | 2014-07-16 | 信越化学工業株式会社 | 光半導体素子封止用樹脂組成物及び当該組成物で封止した光半導体装置 |
JP2012197409A (ja) * | 2010-11-24 | 2012-10-18 | Sekisui Chem Co Ltd | 光半導体装置用封止剤及びそれを用いた光半導体装置 |
CN113214651A (zh) * | 2013-08-28 | 2021-08-06 | 杜邦东丽特殊材料株式会社 | 可固化有机硅组合物、其固化产物以及光学半导体器件 |
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