CN110382625B - 可固化的有机聚硅氧烷组合物和半导体器件 - Google Patents

可固化的有机聚硅氧烷组合物和半导体器件 Download PDF

Info

Publication number
CN110382625B
CN110382625B CN201880013366.9A CN201880013366A CN110382625B CN 110382625 B CN110382625 B CN 110382625B CN 201880013366 A CN201880013366 A CN 201880013366A CN 110382625 B CN110382625 B CN 110382625B
Authority
CN
China
Prior art keywords
sio
ltoreq
mass
curable organopolysiloxane
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880013366.9A
Other languages
English (en)
Other versions
CN110382625A (zh
Inventor
山崎亮介
西岛一裕
饭村智浩
须藤学
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dupont Dongli Special Materials Co ltd
Original Assignee
Dupont Dongli Special Materials Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dupont Dongli Special Materials Co ltd filed Critical Dupont Dongli Special Materials Co ltd
Publication of CN110382625A publication Critical patent/CN110382625A/zh
Application granted granted Critical
Publication of CN110382625B publication Critical patent/CN110382625B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C08G77/08—Preparatory processes characterised by the catalysts used
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
    • H01L2224/27312—Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H01L2224/29191—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H01L2224/29291—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/29388—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H01L2224/29391—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/83424—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83439—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83455—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/83486—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/83487—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/8349—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/8349—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H01L2224/83491—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13056—Photo transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

本发明涉及一种可固化的有机聚硅氧烷组合物，其包含至少(A)每分子具有至少两个烯基的有机聚硅氧烷，(B)由以下平均单元式表示的有机聚硅氧烷树脂：(R1 3SiO1/2)a(R1 2SiO2/2)b(R2SiO3/2)c(SiO4/2)d(在该式中，R1是彼此相同或不同的，并且表示氢原子或不具有脂族不饱和碳键的一价烃基，但每分子至少两个R1表示氢原子，R2表示不具有脂族不饱和键的一价烃基，并且a、b、和c是分别满足0<a<1、0<b<1、0≤c<0.2、且0<d<1的数字，并且还是满足0.6≤a/d≤1.5、1.5≤b/d≤3、且a+b+c+d＝1的数字)，以及(C)用于氢化硅烷化反应的催化剂。这种组合物对半导体元件具有优异的粘合性，并且能够形成仅产生少量气泡的经固化的产物。

Description

可固化的有机聚硅氧烷组合物和半导体器件
技术领域
本发明涉及一种可固化的有机聚硅氧烷组合物和一种半导体器件，该半导体器件通过将半导体元件与该组合物的经固化的材料粘合来构成。
背景技术
可固化的有机聚硅氧烷组合物已用于将半导体元件粘合在具有半导体元件的半导体器件中，该半导体元件诸如光电耦合器、发光二极管、或固态图像传感器。作为这种可固化的有机聚硅氧烷组合物的实例，例如，专利文献1和2已提出了一种可固化的有机聚硅氧烷组合物，该组合物包含基本上直链或环状的含烯基有机聚硅氧烷、支链的含烯基有机聚硅氧烷、在分子链中具有硅键合的氢的直链有机聚硅氧烷、和具有硅键合的氢的支链有机聚硅氧烷——具体地是由平均单元式[H(CH3)2SiO1/2]0.67(SiO4/2)0.33表示的有机聚硅氧烷树脂和由平均单元式[H(CH3)2SiO1/2]0.50[(CH3)3SiO1/2]0.17(SiO4/2)0.33表示的有机聚硅氧烷树脂——以及氢化硅烷化催化剂，并且专利文献3公开了一种可固化的有机聚硅氧烷组合物，该组合物包含每分子具有至少两个烯基的直链有机聚硅氧烷、每分子具有至少两个烯基的支链有机聚硅氧烷、和每分子具有至少两个硅键合的氢的支链有机聚硅氧烷——具体地是由平均单元式[H(CH3)2SiO1/2]0.44(SiO4/2)0.56表示的有机聚硅氧烷树脂、由平均单元式[H(CH3)2SiO1/2]0.25[(CH3)3SiO1/2]0.25(SiO4/2)0.50表示的有机聚硅氧烷树脂、和由平均单元式[(CH3)2SiO1/2]0.20[H(CH3)3SiO2/2]0.40(SiO4/2)0.40表示的有机聚硅氧烷树脂——以及氢化硅烷化催化剂。
尽管在这些可固化的有机聚硅氧烷组合物中含有具有硅键合的氢的有机聚硅氧烷以调节所得经固化的材料的机械强度和/或硬度，但是这种可固化的有机聚硅氧烷组合物具有与半导体元件的粘合性不足或由于在经固化的材料中发生起泡而降低粘合强度的问题。
现有技术文献
专利文献
专利文献1：日本未经审查的专利公开号2012-012433
专利文献2：日本未经审查的专利公开号2012-012434
专利文献3：日本未经审查的专利公开号2016-155967
发明内容
本发明要解决的问题
本发明的目的是提供一种可固化的有机聚硅氧烷组合物，该组合物对半导体元件具有优异的粘合性，并且形成很少起泡的经固化的材料。本发明的另一个目的是提供一种具有优异可靠性的半导体器件。
解决问题的方式
本发明的可固化的有机聚硅氧烷组合物包含至少
(A)每分子具有至少两个烯基的有机聚硅氧烷；
(B)由以下平均单元式表示的有机聚硅氧烷树脂：
(R1 3SiO1/2)a(R1 2SiO2/2)b(R2SiO3/2)c(SiO4/2)d
(其中R1是相同或不同的氢或者不具有脂族不饱和碳键的一价烃，但每分子至少两个R1是氢，R2是不具有脂族不饱和键的一价烃，并且a、b、和c是满足0<a<1、0<b<1、0≤c<0.2、且0<d<1、但0.6≤a/d≤1.5、1.5≤b/d≤3、且a+b+c+d＝1的数字)
(其量使得组分(B)中的硅键合的氢与组分(A)中的烯基的摩尔比为0.5至5)；
以及
(C)氢化硅烷化催化剂(其量足以固化组合物)。
相对于100总质量份的组分(A)至(C)，该组合物优选还包含(D)1至20质量份的具有20至200m2/g的BET比表面积的热解法二氧化硅。
相对于100总质量份的组分(A)至(C)，该组合物优选还包含(E)0.001至5质量份的氢化硅烷化抑制剂。
相对于100总质量份的组分(A)至(C)，该组合物优选还包含(F)0.01至10质量份的粘合促进剂。
该组合物可以包含(G)由以下平均式表示的有机聚硅氧烷：
R3R4 2SiO(R4 2SiO)m(R4HSiO)nSiR4 2R3
(其中R3是相同或不同的氢或者不具有脂族不饱和碳键的一价烃，R4是相同或不同的不具有脂族不饱和碳键的一价烃，m是0至50的数字，并且n是0至50的数字，但如果n是0，则R3是氢)
其量使得组分(G)中的硅键合的氢与组分(A)中的烯基的摩尔比为至多0.3。
固化这种组合物优选形成具有30至70的由JIS K 6253规定的硬度计D硬度的经固化的材料。
该组合物适合作为半导体元件的粘合剂。
本发明的半导体器件的特征在于半导体元件通过可固化的有机聚硅氧烷组合物的经固化的材料进行粘合。
发明效果
本发明的可固化的有机聚硅氧烷组合物的特征在于对半导体元件具有优异的粘合性以及形成具有很少气泡的经固化的材料。本发明的半导体器件的特征在于具有优异的可靠性。
附图说明
图1是构成本发明的半导体器件的实例的表面安装的发光二极管(LED)器件的截面图。
具体实施方式
组分(A)为每分子具有至少两个烯基的有机聚硅氧烷。组分(A)中的烯基的实例为C2-12烯基，诸如乙烯基、烯丙基、丁烯基、戊烯基、己烯基、庚烯基、辛烯基、壬烯基、癸烯基、十一烯基、或十二烯基，并且乙烯基是优选的。组分(A)中的与烯基以外的硅键合的基团的实例为C2-12烷基，诸如甲基、乙基、丙基、异丙基、丁基、异丁基、叔丁基、戊基、新戊基、己基、环己基、庚基、辛基、壬基、癸基、十一烷基、或十二烷基；C6-20芳基，诸如苯基、甲苯基、二甲苯基、或萘基；C7-20芳烷基，诸如苄基、苯乙基、或苯丙基；以及其中这些基团中的一些或所有的氢被诸如氟、氯、或碘等的卤素取代的基团。组分(A)中的硅可以在不妨碍本发明的目的的范围内具有少量羟基或烷氧基，诸如甲氧基或乙氧基。
尽管没有明确限制，但组分(A)的分子结构的实例是直链、部分分支的直链、环状、或三维网状结构。组分(A)可以是具有这些分子结构的一种有机聚硅氧烷，或者具有这些分子结构的两种或更多种有机聚硅氧烷的混合物。
直链、部分分支的直链、或环状有机聚硅氧烷由以下平均单元式表示：
(R5 3SiO1/2)e(R5 2SiO2/2)f(R5SiO3/2)g(SiO4/2)h(HO1/2)i。
在该式中，R5是相同或不同的一价烃，其具体实例为C1-12烷基，诸如甲基、乙基、丙基、异丙基、丁基、异丁基、叔丁基、戊基、新戊基、己基、环己基、庚基、辛基、壬基、癸基、十一烷基、或十二烷基；C2-12烯基，诸如乙烯基、烯丙基、丁烯基、戊烯基、己烯基、庚烯基、辛烯基、壬烯基、癸烯基、十一烯基、或十二烯基；C6-20芳基，诸如苯基、甲苯基、二甲苯基、或萘基；C7-20芳烷基，诸如苄基、苯乙基、或苯丙基；以及其中这些基团中的一些或所有的氢被诸如氟、氯、或碘等的卤素取代的基团。每分子至少两个R5是烯基，优选乙烯基。
在该式中，e、f、g、h、和i是表示硅氧烷结构单元的比率与羟基的比率的数字，并且满足0≤e≤0.05、0.9≤f≤1、0≤g≤0.03、0≤h≤0.03、0≤i≤0.2、且e+f+g+h＝1。这是因为如果e大于该范围的上限，则有机聚硅氧烷的粘度降低太多，这降低所得组合物的处理可操作性和经固化的材料的硬度。如果g和h大于该范围的上限，则有机聚硅氧烷的粘度增加太多，这降低所得组合物的处理可操作性并使所得经固化的材料变脆。f的范围由e、g、和h确定，但如果f小于该范围的下限，则所得组合物不能得到适合的粘度，并且经固化的材料不能得到适合的硬度和机械强度。有机聚硅氧烷优选在25℃下为液体；具体地，在25℃下的粘度优选为3至100,000mPa-s的范围，或更优选为5至5,000mPa-s的范围。这是因为如果粘度不小于该范围的下限，则所得经固化的材料具有改善的机械强度，并且如果粘度不大于该范围的上限，则所得组合物具有改善的处理可操作性。
这种有机聚硅氧烷的实例是由以下平均单元式表示的有机聚硅氧烷。在式中，Vi表示乙烯基，Me表示甲基，并且Ph表示苯基。
(ViMe2SiO1/2)0.012(Me2SiO2/2)0.998
(ViMe2SiO1/2)0.007(Me2SiO2/2)0.993
(Me3SiO1/2)0.007(Me2SiO2/2)0.983(MeViSiO2/2)0.010
(Me3SiO1/2)0.01(MeViSiO1/2)0.01(Me2SiO2/2)0.96(MeSiO3/2)002
(ViMe2SiO1/2)0.005(Me2SiO2/2)0.895(MePhSiO2/2)0.100
其他实例是由以下平均式表示的有机聚硅氧烷。在式中，Vi和Me与上文给出的相同。
(MeViSiO2/2)3
(MeViSiO2/2)4
(MeViSiO2/2)5
支链或三维网络有机聚硅氧烷由以下平均单元式表示：
(R5 3SiO1/2)j(R5 2SiO2/2)k(R5SiO3/2)l(SiO4/2)p(HO1/2)q。
在该式中，R5是一价烃，其实例与先前给出的相同。每分子至少两个R5是烯基，优选乙烯基。
在该式中，j、k、l、p、和q是表示硅氧烷结构单元的比率与羟基的比率的数字，并且满足0.4≤j≤0.6、0≤k≤0.05、0≤l≤0.05、0.4≤p≤0.6、0≤q≤0.05、且j+k+l+p＝1。这是因为如果j小于该范围的下限，则经固化的材料的机械强度降低，并且如果j大于该范围的上限，则经固化的材料不能得到足够的硬度。如果k大于该范围的上限，则经固化的材料不能得到足够的硬度。如果l大于该范围的上限，则经固化的材料的机械强度降低。如果p小于该范围的下限，则经固化的材料不能得到足够的硬度，并且如果p大于该范围的上限，则所得组合物的分散性降低并且经固化的材料不能得到足够的机械强度。在25℃下的形状没有特别限制，并且可以是液体或固体，前提条件是它与直链、部分分支的直链、或环状有机聚硅氧烷相容。
这种有机聚硅氧烷的实例是由以下平均组成式表示的有机聚硅氧烷。在式中，Vi、Me、和Ph与先前给出的相同。
(ViMe2SiO1/2)0.10(Me3SiO1/2)0.33(SiO4/2)0.57(HO1/2)0.03
(ViMe2SiO1/2)0.13(Me3SiO1/2)0.35(SiO4/2)0.52(HO1/2)0.02
(ViMePhSiO1/2)0.10(Me3SiO1/2)0.45(SiO4/2)0.45(HO1/2)0.03
(ViMe2SiO1/2)0.09(Me3SiO1/2)0.31(SiO4/2)0.60(HO1/2)0.04
(ViMe2SiO1/2)0.10(Me3SiO1/2)0.40(SiO4/2)0.50(HO1/2)0.03
组分(A)优选包含15至100质量％的直链、部分分支的直链、或环状有机聚硅氧烷以及0至85质量％的支链或三维网络有机聚硅氧烷。这是因为如果前者有机聚硅氧烷的含量不小于该范围的下限，则所得经固化的材料可以得到足够的柔韧性。
因为它具有良好的处理可操作性，所以这种组分(A)在25℃下优选为液体；具体地，在25℃下的粘度优选为100至5,000,000mPa-s的范围，或更优选为500至100,000mPa-s的范围。
组分(B)由以下平均单元式表示的有机聚硅氧烷树脂：
(R1 3SiO1/2)a(R1 2SiO2/2)b(R2SiO3/2)c(SiO4/2)d。
在该式中，R1是相同或不同的氢或者不具有脂族不饱和碳键的一价烃。R1的一价烃的实例为C1-12烷基，诸如甲基、乙基、丙基、异丙基、丁基、异丁基、叔丁基、戊基、新戊基、己基、环己基、庚基、辛基、壬基、癸基、十一烷基、或十二烷基；C6-20芳基，诸如苯基、甲苯基、二甲苯基、或萘基；C7-20芳烷基，诸如苄基、苯乙基、或苯丙基；以及其中这些基团中的一些或所有的氢被诸如氟、氯、或碘等的卤素取代的基团。然而，每分子至少两个R1是氢。
在该式中，R2是不具有脂族不饱和键的一价烃，其实例是与R1相同的基团。
在该式中，a、b、和c是满足0<a<1、0<b<1、0≤c<0.2、且0<d<1、但0.6≤a/d≤1.5、1.5≤b/d≤3、且a+b+c+d＝1的数字，并且优选是满足0.7≤a/d≤1.5且1.5≤b/d≤2.5的数字，满足0.7≤a/d≤1.4且1.6≤b/d≤2.5的数字，或者满足0.8≤a/d≤1.4且1.6≤b/d≤2的数字。这是因为如果a/d不小于该范围的下限，则所得组合物的粘度不会增加太多，并且如果a/d不大于该范围的上限，则所得经固化的材料具有良好的粘合特征。如果b/d在该范围内，则所得经固化的材料具有良好的粘合特征。
这种组分(B)的重均分子量(Mw)优选为6,000或更高，更优选为8,000或更高，并且甚至更优选为10,000或更高。这是因为如果组分(B)的重均分子量不小于下限，则所得经固化的材料具有良好的粘合强度，并且抑制经固化的材料中的起泡。
这种组分(B)的实例是由平均单元式
(Me3SiO1/2)0.23(MeHSiO2/2)0.51(SiO4/2)0.26表示的有机聚硅氧烷，
由平均单元式
(Me3SiO1/2)0.24(MeHSiO2/2)0.49(SiO4/2)0.27表示的有机聚硅氧烷树脂，和
由平均单元式
(Me3SiO1/2)0.24(Me2SiO2/2)0.10(MeHSiO2/2)0.40(SiO4/2)0.26表示的有机聚硅氧烷树脂
组分(B)的含量是以下量，该量使得组分(B)中的硅键合的氢与组分(A)中1mol的烯基的摩尔比为0.5至5的范围，并且优选为0.5至3mol的范围，并且更优选为0.5至2mol的范围，用于使所得经固化的材料具有良好的硬度、机械特征、和粘合性。
组分(C)是用于促进组合物的氢化硅烷化的氢化硅烷化催化剂。这种组分(C)的实例是铂族金属催化剂或铂族金属化合物催化剂，优选基于铂的催化剂、基于铑的催化剂、或基于钯的催化剂，并且更优选基于铂的催化剂。基于铂的催化剂的实例是铂细粉、铂黑、氯化铂、醇改性的氯化铂、氯化铂和二烯烃的络合物、铂-烯烃络合物、铂-羰基络合物诸如铂双(乙酰乙酸酯)或铂双(乙酰丙酮)、氯化铂-烯基硅氧烷络合物诸如氯化铂-二乙烯基四甲基二硅氧烷络合物或氯化铂-四乙烯基四甲基环四硅氧烷、铂-烯基硅氧烷诸如铂-二乙烯基四甲基二硅氧烷络合物或铂-四乙烯基四甲基环四硅氧烷、和氯化铂与乙炔醇之间的络合物；并且特别优选铂-烯基硅氧烷络合物，用于良好的氢化硅烷化性能。
烯基硅氧烷的实例是1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷，1,3,5,7-四甲基-1,3,5,7-四乙烯基环四硅氧烷，其中烯基硅氧烷中的一些甲基被乙基、苯基等取代的烯基硅氧烷低聚物，和其中烯基硅氧烷中的一些乙烯基被烯丙基、己烯基等取代的烯基硅氧烷低聚物。具体地，1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷是优选的，用于所产生的铂-烯基硅氧烷的良好稳定性。
为了改善铂-烯基硅氧烷催化剂的稳定性，这些铂-烯基硅氧烷催化剂优选溶解在诸如1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷、1,3-二烯丙基-1,1,3,3-四甲基二硅氧烷、1,3-二乙烯基-1,3-二甲基-1,3-二苯基二硅氧烷、1,3-二乙烯基-1,1,3,3-四苯基二硅氧烷、或1,3,5,7-四甲基-1,3,5,7-四乙烯基环四硅氧烷等的烯基硅氧烷低聚物中，或者诸如二甲基硅氧烷低聚物等的有机硅氧烷低聚物中，并且特别优选溶解在烯基硅氧烷低聚物中。
组分(C)的含量不受限制，前提条件是它是促进组合物固化的量，并且具体地，是使得组合物中的铂族金属(特别是铂)按质量单元计在0.01-500ppm范围内、优选0.01至100ppm范围内、并且更优选0.1至50ppm范围内的量。这是因为如果组分(C)的含量不小于该范围的下限，则所得组合物具有良好的硬度，并且如果该含量不大于该范围的上限，则所得经固化的材料抵抗诸如着色等的问题。
该组合物优选还包含(D)具有20至200m2/g的BET比表面积的热解法二氧化硅，用于改善处理可操作性和粘合性的目的。尽管不受限制，但是相对于100总质量份的组分(A)至(C)，组分(D)的含量优选为1至20质量份的范围，以使所得经固化的材料得到良好的机械特征。
该组合物优选含有(E)氢化硅烷化抑制剂，以延长室温下的可用时间并改善储存稳定性。组分(E)的实例是炔醇，诸如1-乙炔基环己烷-1-醇、2-甲基-3-丁炔-2-醇、3,5-二甲基-1-己炔-3-醇、或2-苯基-3-丁炔-2-醇；炔化合物，诸如3-甲基-3-戊烯-1-炔或3,5-二甲基-3-己烯-1-炔；甲基烯基硅氧烷低聚物，诸如1,3,5,7-四甲基-1,3,5,7-四己烯基环四硅氧烷；炔氧基硅烷，诸如二甲基双(3-甲基-1-丁炔-3-氧基)硅烷或甲基乙烯基双(3-甲基-1-丁炔-3-氧基)硅烷；炔氧基硅烷化合物，诸如甲基三(1-甲基-1-苯基-丙氧基)硅烷、二甲基双(1-甲基-1-苯基-丙氧基)硅烷、甲基三(1,1-二甲基-丙氧基)硅烷、或二甲基双(1,1-二甲基-丙氧基(硅烷)；以及苯并三唑。
组分(E)的含量不受限制，并且当组分(A)、(B)、和(C)混合时，是足以抑制固化并且不引起胶凝的量，并且相对于100总质量份的组分(A)至(C)，优选为0.0001至5质量份的范围、更优选为0.01至5质量份的范围、并且甚至更优选为0.01至3质量份的范围，以使组合物得到足够的贮存期。
该组合物优选含有(F)粘合促进剂，以进一步改善与在固化时接触的基材的粘合性。粘合促进剂可以是常规粘合促进剂，该促进剂可以加入到通过氢化硅烷化固化的可固化的有机聚硅氧烷组合物中。
这种组分(F)的实例是有机硅烷或者具有约4至20个硅的直链、支链、或环状有机硅氧烷低聚物，具有三烷氧基甲硅烷氧基(例如三甲氧基甲硅烷氧基或三乙氧基甲硅烷氧基)或三烷氧基甲硅烷基烷基(例如三甲氧基甲硅烷基乙基或三乙氧基甲硅烷基乙基)以及羟基或烯基(例如，乙烯基或烯丙基)；有机硅烷或者具有约4至20个硅的直链、支链、或环状有机硅氧烷低聚物，具有三烷氧基甲硅烷氧基或三烷氧基甲硅烷基烷基和甲基丙烯酰氧基烷基(例如3-甲基丙烯酰氧基丙基)；有机硅烷或者具有约4至20个硅的直链、支链、或环状有机硅氧烷低聚物，具有三烷氧基甲硅烷氧基或三烷氧基甲硅烷基烷基和环氧键合的烷基(例如，3-缩水甘油氧基丙基、4-缩水甘油氧基丁基、2-(3,4-环氧环己基)乙基、或3-(3,4-环氧环己基)丙基)；氨基烷基三烷氧基硅烷和环氧键合的烷基三烷氧基硅烷反应产物；和含环氧的聚硅酸乙酯；并且具体地，乙烯基三甲氧基硅烷、烯丙基三甲氧基硅烷、烯丙基三乙氧基硅烷、氢三乙氧基硅烷、3-缩水甘油氧基丙基三甲氧基硅烷、3-缩水甘油氧基丙基三乙氧基硅烷、2-(3,4-环氧环己基)乙基三甲氧基硅烷、3-甲基丙烯酰氧基丙基三甲氧基硅烷、3-甲基丙烯酰氧基丙基三乙氧基硅烷)、3-缩水甘油氧基丙基三乙氧基硅烷和3-氨基丙基三乙氧基硅烷反应产物、硅烷醇封端的甲基乙烯基硅氧烷低聚物和3-缩水甘油氧基丙基三甲氧基硅烷缩合反应产物、硅烷醇封端的甲基乙烯基硅氧烷低聚物和3-甲基丙烯酰氧基丙基三乙氧基硅烷缩合反应产物、和三(3-三甲氧基甲硅烷基丙基)异氰脲酸酯。
组分(F)的含量不受限制，并且相对于100总质量份的组分(A)至(C)，优选为0.01至10质量份的范围或更优选为0.01至5质量份的范围，用于固化特征以及不促进经固化的材料的变色。
除组分(B)之外，该组合物可以含有具有硅键合的氢的有机聚硅氧烷。这种有机聚硅氧烷的实例是(G)由以下平均式表示的有机聚硅氧烷：
R3R4 2SiO(R4 2SiO)m(R4HSiO)nSiR4 2R3。
在该式中，R3是相同或不同的氢或者不具有脂族不饱和碳键的一价烃。R3的一价烃的实例是与R1相同的一价烃。
在该式中，R4是相同或不同的不具有脂族不饱和碳键的一价烃，其实例是与R1相同的一价烃。
在该式中，m是0至50的数字，并且n是0至50的数字，但是如果n是0，则R3是氢。
这种有机聚硅氧烷的实例是具有以下平均结构式的有机聚硅氧烷。这些式中的Me和Ph与先前给出的相同。
Me3SiO(MeHSiO)10SiMe3
HMe2SiO(Me2SiO)10SiMe2H
Me3SiO(MeHSiO)80SiMe3
Me3SiO(Me2SiO)30(MeHSiO)30SiMe3
Me2PhSiO(MeHSiO)35SiMe2Ph
尽管不受限制，但这种有机聚硅氧烷的含量优选为以下量，该量使得组分(G)中的硅键合的氢相对于组分(A)中1mol的总烯基为至多0.5mol，并且更优选至多0.3mol，以便能够获得具有良好粘合性并抵抗起泡的经固化的材料。
在它们不妨碍本发明的目的的前提条件下，该组合物可以含有其他任意组分，包括除组分(D)之外的无机填料，诸如二氧化硅、玻璃、氧化铝、或氧化锌；有机硅橡胶粉末；树脂粉末，诸如有机硅树脂或聚甲基丙烯酸酯树脂；耐热剂、染料、颜料、阻燃剂、和溶剂。
从处理可操作性的观点来看，该组合物在25℃下优选为液体，并且在25℃下的粘度优选为10至1,000,000mPa-s。在该组合物用作半导体元件的粘合剂的情况下，在25℃下的粘度优选为1,000至500,000mPa-s。
通过使组合物在室温或加热下静止来固化该组合物，但优选加热以快速固化。加热温度优选为50℃至200℃的范围。
这种组合物对以下各项具有优异的初始粘合性和粘合耐久性，特别是在经受热-冷循环时：金属，诸如钢、不锈钢、铝、铜、银、钛、或钛合金；半导体元件，诸如硅半导体、基于镓磷的半导体、或基于镓砷的半导体；陶瓷；玻璃、热塑性树脂；具有极性基团的热塑性树脂；等。
固化该组合物优选形成具有30至70的由JIS K 6253规定的硬度计D硬度的经固化的材料。这是因为如果硬度低于该范围的下限，则该组合物具有差的内聚力并且不能获得足够的强度和粘合性，并且如果硬度大于该范围的上限，则该组合物不能获得足够的粘合性。
接下来，将详细描述本发明的半导体器件。
本发明的半导体器件的特征在于壳体中的半导体元件通过包含可固化的有机聚硅氧烷组合物的粘合剂固化材料进行粘合。半导体元件具体地是例如发光二极管(LED)、半导体激光器、光电二极管、光电晶体管、固态图像传感器、或光电耦合器和接收器，并且特别优选发光二极管(LED)。
因为发光二极管(LED)从半导体的上方、下方、左侧、和右侧发射光，所以构成该器件的部件不应吸收光，因此选择具有高透光率或高反射率的材料。其上安装有半导体元件的基板也不例外。基板的实例是导电金属，诸如银、金、或铜；非导电金属，诸如铝或镍；与白色颜料混合的热塑性树脂，诸如PPA或LCP；含有白色颜料的热固性树脂，诸如环氧树脂、BT树脂、聚酰亚胺树脂、或有机硅树脂；和陶瓷，诸如氧化铝或氮化铝。该组合物对光学半导体元件和基板具有良好的粘合性，并且因此可以改善所得光学半导体器件的可靠性。
将参考图1详细描述本发明的半导体器件。图1是单个表面安装的发光二极管(LED)器件的截面图，该器件是半导体器件的典型实例。图1中的发光二极管(LED)器件具有发光二极管芯片5，该芯片由粘合材料4粘合到由聚邻苯二甲酰胺(PPA)树脂制成的壳体1中的冲模垫3上，其中发光二极管(LED)芯片5通过接合线6接合到内引脚2，并且通过密封材料7与壳体的内壁密封在一起。本发明的可固化的有机聚硅氧烷组合物用作形成本发明的半导体器件中的粘合材料4的组合物。
实例
将通过实例和对比实例详细描述本发明的可固化的有机聚硅氧烷组合物和半导体器件。在实例和对比实例中，粘度是在25℃下的粘度，并且以下组分用于制备实例和对比实例中的可固化的有机聚硅氧烷组合物。在式中，Vi表示乙烯基，并且Me表示甲基。在式中，SiH/Vi比表示组分(b-1)至(b-6)中的硅键合的氢相对于组分(a-1)至(a-7)中的1mol总量的乙烯基的总摩尔数。
组分(a-1)：具有60mPa-s粘度的有机聚硅氧烷，由以下平均单元式表示：
(Me2ViSiO1/2)0.042(Me2SiO2/2)0.958
(乙烯基含量＝1.53质量％)
组分(a-2)：具有550mPa-s粘度的有机聚硅氧烷，由以下平均单元式表示：
(Me2ViSiO1/2)0.012(Me2SiO2/2)0.988
(乙烯基含量＝0.45质量％)
组分(a-3)：具有4mPa-s粘度的环状甲基乙烯基聚硅氧烷，由以下平均式表示：
(MeViSiO)4
(乙烯基含量＝30质量％)
组分(a-4)：具有30mPa-s粘度的环状甲基乙烯基聚硅氧烷，由以下平均式表示：
HO(MeViSiO)20H
(乙烯基含量＝30质量％)
组分(a-5)：在室温下为固体的有机聚硅氧烷，由以下平均单元式表示：
(Me2ViSiO1/2)0.55(Me3SiO1/2)0.05(SiO4/2)0.40
(乙烯基含量＝19.0质量％)
组分(a-6)：在室温下为固体的有机聚硅氧烷，由以下平均单元式表示：
(Me2ViSiO1/2)0.09(Me3SiO1/2)0.43(SiO4/2)0.48(HO1/2)0.03
(乙烯基含量＝3.0质量％)
组分(a-7)：在室温下为固体的有机聚硅氧烷，由以下平均单元式表示：
(Me2ViSiO1/2)0.10(Me3SiO1/2)0.45(SiO4/2)0.45(HO1/2)0.02
(乙烯基含量＝3.0质量％)
组分(b-1)：具有2000mPa-s粘度的有机聚硅氧烷，由以下平均单元式表示：
(Me3SiO1/2)0.23(MeHSiO2/2)0.51(SiO4/2)0.26
(重均分子量＝18,000，硅键合的氢含量＝0.78质量％)
组分(b-2)：具有510mPa-s粘度的有机聚硅氧烷，由以下平均单元式表示：
(Me3SiO1/2)0.24(MeHSiO2/2)0.49(SiO4/2)0.27
(重均分子量＝16,300，硅键合的氢含量＝0.75质量％)
组分(b-3)：具有640mPa-s粘度的有机聚硅氧烷，由以下平均单元式表示：
(Me3SiO1/2)0.24(Me2SiO2/2)0.10(MeHSiO2/2)0.40(SiO4/2)0.26
(重均分子量＝15,400，硅键合的氢含量＝0.78质量％)
组分(b-4)：具有230mPa-s粘度的有机聚硅氧烷，由以下平均单元式表示：
(HMe2SiO1/2)0.51(Me2SiO2/2)0.15(SiO4/2)0.34(HO1/2)0.03
(重均分子量＝2,100，硅键合的氢含量＝0.80质量％)
组分(b-5)：具有120mPa-s粘度的有机聚硅氧烷，由以下平均单元式表示：
(HMe2SiO1/2)0.67(SiO4/2)0.33
(重均分子量＝1,310，硅键合的氢含量＝0.95质量％)
组分(b-6)：具有10mPa-s粘度的有机聚硅氧烷，由以下平均单元式表示：
Me3SiO(MeHSiO)10SiMe3
(重均分子量＝8,800，硅键合的氢含量＝1.6质量％)
组分(c)：铂1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷络合物的1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷溶液，具有约4重量％的铂金属含量。
组分(d)：具有115至165m2/g的BET比表面积以及通过六甲基二硅氮烷进行疏水化的表面的热解法二氧化硅(商品名：RX200，由日本艾罗西尔公司(Nippon Aerosil)制造)。
组分(e)：1-乙炔基环己-1-醇
组分(f)：3-缩水甘油氧基丙基三甲氧基硅烷和甲基乙烯基硅氧烷低聚物的缩合反应产物，其中两个链端用硅烷醇密封，在25℃下的粘度为30mPa-s
如下测量通过固化实例和对比实例中的可固化的有机聚硅氧烷组合物获得的经固化的材料的硬度、冲模剪切强度、和经固化的材料中的气泡数。
经固化的材料的硬度
通过在150℃下将可固化的有机聚硅氧烷组合物压制成型一小时来制造片材经固化的材料。使用JIS K 6253规定的D型硬度计测量该片材经固化的材料的硬度。
冲模剪切强度
可固化的有机聚硅氧烷组合物通过分配器涂覆在测量为25mm×75mm的镀银钢板上的五个区域上，每个区域约300mg。接下来，将组合物加热至150℃保持2小时以固化，同时用1mm厚和10mm见方的玻璃芯片覆盖并用1kg板夹住。随后，将材料冷却至室温，并使用清津贸易有限公司(Seishin Trading Co.,Ltd)制造的接合测试仪(Bond Tester)SS-100KP测量冲模剪切强度。
经固化的材料中的气泡数
通过目测计数通过上述方法制造的冲模剪切强度测试片中的气泡数。
实例1-6和对比实例1-3
使用表1中所示的混合比制备可固化的有机聚硅氧烷组合物。如先前所述测量经固化的材料的特征，并且结果如表1所示。
表1
Figure BDA0002175703470000141
工业适用性
本发明的可固化的有机聚硅氧烷组合物可用作诸如发光二极管(LED)、光电晶体管、固态图像传感器、或光电耦合器发射器和接收器等的半导体元件的粘合剂。本发明的半导体器件可用作半导体器件，诸如光学器件、光学仪器、照明设备、或照明系统。
附图标记说明
1 由聚邻苯二甲酰胺(PPA)树脂制成的外壳
2 内引脚
3 冲模垫
4 粘合材料
5 发光二极管(LED)芯片
6 接合线
7 密封材料

Claims (8)

1.一种可固化的有机聚硅氧烷组合物，其包含至少(A)每分子具有至少2个烯基的有机聚硅氧烷；
(B)由以下平均单元式表示的有机聚硅氧烷树脂：
(R1 3SiO1/2)a(R1 2SiO2/2)b(R2SiO3/2)c(SiO4/2)d
其中R1是相同或不同的氢或者不具有脂族不饱和碳键的一价烃，但每分子至少两个R1是氢，R2是不具有脂族不饱和键的一价烃，并且a、b、和c是满足0<a<1、0<b<1、0≤c<0.2、且0<d<1、但0.6≤a/d≤1.5、1.5≤b/d≤3、且a+b+c+d＝1的数字；
其量使得所述组分(B)中的硅键合的氢与所述组分(A)中的烯基的摩尔比为0.5至5；
以及
(C)氢化硅烷化催化剂，其量足以固化所述组合物。
2.根据权利要求1所述的可固化的有机聚硅氧烷组合物，其还包含(D)相对于100总质量份的所述组分(A)至(C)，1至20质量份的具有20至200m2/g的BET比表面积的热解法二氧化硅。
3.根据权利要求1或2所述的可固化的有机聚硅氧烷组合物，其还包含(E)相对于100总质量份的所述组分(A)至(C)，0.001至5质量份的氢化硅烷化抑制剂。
4.根据权利要求1所述的可固化的有机聚硅氧烷组合物，其还包含(F)相对于100总质量份的所述组分(A)至(C)，0.01至10质量份的粘合促进剂。
5.根据权利要求1所述的可固化的有机聚硅氧烷组合物，其还包含(G)由以下平均式表示的有机聚硅氧烷：
R3R4 2SiO(R4 2SiO)m(R4HSiO)nSiR4 2R3
其中R3是相同或不同的氢或者不具有脂族不饱和碳键的一价烃，R4是相同或不同的不具有脂族不饱和碳键的一价烃，m是0至50的数字，并且n是0至50的数字，但如果n是0，则R3是氢；
其量使得所述组分(G)中的硅键合的氢与所述组分(A)中的烯基的摩尔比为至多0.5。
6.根据权利要求1所述的可固化的有机聚硅氧烷组合物，其中，固化形成具有30至70的由JIS K 6253规定的硬度计D硬度的经固化的材料。
7.根据权利要求1所述的可固化的有机聚硅氧烷组合物，其构成半导体元件的粘合剂。
8.一种半导体器件，其特征在于，半导体元件通过根据权利要求1至6中任一项所述的可固化的有机聚硅氧烷组合物的经固化的材料进行粘合。
CN201880013366.9A 2017-02-27 2018-02-02 可固化的有机聚硅氧烷组合物和半导体器件 Active CN110382625B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-035450 2017-02-27
JP2017035450 2017-02-27
PCT/JP2018/003534 WO2018155131A1 (ja) 2017-02-27 2018-02-02 硬化性オルガノポリシロキサン組成物および半導体装置

Publications (2)

Publication Number Publication Date
CN110382625A CN110382625A (zh) 2019-10-25
CN110382625B true CN110382625B (zh) 2022-02-18

Family

ID=63253825

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880013366.9A Active CN110382625B (zh) 2017-02-27 2018-02-02 可固化的有机聚硅氧烷组合物和半导体器件

Country Status (8)

Country Link
US (1) US10927278B2 (zh)
EP (1) EP3587498B1 (zh)
JP (1) JP6884458B2 (zh)
KR (1) KR102226981B1 (zh)
CN (1) CN110382625B (zh)
MY (1) MY187866A (zh)
TW (1) TWI767988B (zh)
WO (1) WO2018155131A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3964299A4 (en) 2019-02-14 2023-08-09 Dow Toray Co., Ltd. ORGANOPOLYSILOXANE CURED PRODUCT FILM AND USE, METHOD OF MAKING AND APPARATUS FOR MAKING THEREOF
TW202122496A (zh) * 2019-12-11 2021-06-16 美商陶氏全球科技公司 快速矽氫化固化組合物
JP7475135B2 (ja) * 2019-12-25 2024-04-26 デュポン・東レ・スペシャルティ・マテリアル株式会社 硬化性白色シリコーン組成物、光半導体装置用反射材、および光半導体装置
CN114058326B (zh) * 2021-11-22 2023-05-23 烟台德邦科技股份有限公司 一种粘接及可靠性优异的有机聚硅氧烷组合物及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101506309A (zh) * 2006-08-25 2009-08-12 陶氏康宁东丽株式会社 可固化的有机基聚硅氧烷组合物和半导体器件
CN102959015A (zh) * 2010-06-29 2013-03-06 道康宁东丽株式会社 可固化的有机聚硅氧烷组合物及光学半导体器件
CN103044923A (zh) * 2011-10-13 2013-04-17 信越化学工业株式会社 导电性有机硅组合物及其制备方法
CN104812856A (zh) * 2012-10-24 2015-07-29 道康宁东丽株式会社 有机聚硅氧烷、可固化有机硅组合物、其固化产物及光学半导体器件
CN104812841A (zh) * 2012-10-30 2015-07-29 道康宁东丽株式会社 可固化有机硅组合物、其固化产物及光学半导体器件
CN104903403A (zh) * 2013-01-10 2015-09-09 信越化学工业株式会社 加成固化型硅酮组合物、光学元件密封材料及光学元件
CN105960438A (zh) * 2014-02-04 2016-09-21 道康宁东丽株式会社 硬化性硅组合物、其硬化物、以及光半导体装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2698875B1 (fr) * 1992-12-04 1995-01-13 Rhone Poulenc Chimie Système silicone modulateur d'adhérence et son utilisation pour la préparation de compositions antiadhérentes durcissables.
JP2004359756A (ja) 2003-06-03 2004-12-24 Wacker Asahikasei Silicone Co Ltd Ｌｅｄ用封止剤組成物
JP5555170B2 (ja) 2008-10-02 2014-07-23 株式会社カネカ 光硬化性組成物および硬化物
JP5284880B2 (ja) 2009-06-10 2013-09-11 株式会社カネカ 光硬化性組成物およびそれを用いた絶縁性薄膜および薄膜トランジスタ
JP5749446B2 (ja) 2010-03-30 2015-07-15 株式会社カネカ 光硬化性組成物
JP5534977B2 (ja) 2010-06-29 2014-07-02 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および光半導体装置
CN103781852A (zh) 2011-07-07 2014-05-07 道康宁东丽株式会社 固化硅组合物、其固化物、及其光半导体装置
JPWO2013005859A1 (ja) 2011-07-07 2015-02-23 東レ・ダウコーニング株式会社 オルガノポリシロキサンおよびその製造方法
JP5505394B2 (ja) * 2011-10-20 2014-05-28 信越化学工業株式会社 シリコーンゴムの親水性付与方法
CN104066794B (zh) 2011-11-25 2016-08-24 Lg化学株式会社 可固化组合物
JP2014098080A (ja) 2012-11-14 2014-05-29 Dow Corning Toray Co Ltd 光二量化官能基含有オルガノポリシロキサン、それを含む活性エネルギー線硬化型オルガノポリシロキサン組成物、及びその硬化物
TW201431959A (zh) 2012-12-28 2014-08-16 Dow Corning 用於轉換器之可固化有機聚矽氧烷組合物及該可固化聚矽氧組合物於轉換器之應用
JP2016084419A (ja) 2014-10-27 2016-05-19 信越化学工業株式会社 集光型太陽電池用シリコーンゴム組成物及び集光型太陽電池用フレネルレンズ及びプリズムレンズ
JP6678388B2 (ja) 2014-12-25 2020-04-08 信越化学工業株式会社 硬化性シリコーン樹脂組成物
JP6277974B2 (ja) 2015-02-26 2018-02-14 信越化学工業株式会社 付加硬化性シリコーン樹脂組成物及び光半導体装置用ダイアタッチ材
EP3196229B1 (en) 2015-11-05 2018-09-26 Dow Silicones Corporation Branched polyorganosiloxanes and related curable compositions, methods, uses and devices
JP2018111783A (ja) 2017-01-13 2018-07-19 セントラル硝子株式会社 硬化性シリコーン樹脂組成物およびその硬化物、並びにこれらを用いた半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101506309A (zh) * 2006-08-25 2009-08-12 陶氏康宁东丽株式会社 可固化的有机基聚硅氧烷组合物和半导体器件
CN102959015A (zh) * 2010-06-29 2013-03-06 道康宁东丽株式会社 可固化的有机聚硅氧烷组合物及光学半导体器件
CN103044923A (zh) * 2011-10-13 2013-04-17 信越化学工业株式会社 导电性有机硅组合物及其制备方法
CN104812856A (zh) * 2012-10-24 2015-07-29 道康宁东丽株式会社 有机聚硅氧烷、可固化有机硅组合物、其固化产物及光学半导体器件
CN104812841A (zh) * 2012-10-30 2015-07-29 道康宁东丽株式会社 可固化有机硅组合物、其固化产物及光学半导体器件
CN104903403A (zh) * 2013-01-10 2015-09-09 信越化学工业株式会社 加成固化型硅酮组合物、光学元件密封材料及光学元件
CN105960438A (zh) * 2014-02-04 2016-09-21 道康宁东丽株式会社 硬化性硅组合物、其硬化物、以及光半导体装置

Also Published As

Publication number Publication date
US20190375969A1 (en) 2019-12-12
EP3587498B1 (en) 2022-02-16
TW201842137A (zh) 2018-12-01
KR102226981B1 (ko) 2021-03-15
JP6884458B2 (ja) 2021-06-09
EP3587498A1 (en) 2020-01-01
CN110382625A (zh) 2019-10-25
US10927278B2 (en) 2021-02-23
KR20190103457A (ko) 2019-09-04
JPWO2018155131A1 (ja) 2019-11-21
WO2018155131A1 (ja) 2018-08-30
MY187866A (en) 2021-10-26
TWI767988B (zh) 2022-06-21
EP3587498A4 (en) 2020-12-16

Similar Documents

Publication Publication Date Title
JP5534977B2 (ja) 硬化性オルガノポリシロキサン組成物および光半導体装置
JP5680889B2 (ja) 硬化性オルガノポリシロキサン組成物および光半導体装置
JP5769622B2 (ja) 硬化性オルガノポリシロキサン組成物、光半導体素子封止剤および光半導体装置
KR20170052649A (ko) 경화성 실리콘 조성물, 그 경화물 및 광 반도체 장치
CN110382625B (zh) 可固化的有机聚硅氧烷组合物和半导体器件
KR102044675B1 (ko) 경화성 실리콘 조성물, 이의 경화물, 및 광반도체 디바이스
EP2809726A1 (en) Curable silicone composition, cured product thereof, and optical semiconductor device
KR101686448B1 (ko) 실리콘 재료, 경화성 실리콘 조성물, 및 광학 장치
EP3662006B1 (en) Curable organopolysiloxane composition and optical semiconductor device
TWI829640B (zh) 可固化聚矽氧組合物及光學半導體裝置
KR20220094127A (ko) 경화성 실리콘 조성물, 봉지재, 및 광 반도체 장치
KR20230133239A (ko) 경화성 실리콘 조성물
KR20220073655A (ko) 핫멜트성 실리콘 조성물, 봉지제, 핫멜트 접착제, 및 광 반도체 장치

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Address after: Tokyo, Japan

Applicant after: DuPont Dongli special materials Co.,Ltd.

Address before: Tokyo, Japan

Applicant before: DOW CORNING TORAY Co.,Ltd.

GR01 Patent grant
GR01 Patent grant