US8610293B2 - Resin composition for encapsulating optical semiconductor element and optical semiconductor device - Google Patents
Resin composition for encapsulating optical semiconductor element and optical semiconductor device Download PDFInfo
- Publication number
- US8610293B2 US8610293B2 US12/967,746 US96774610A US8610293B2 US 8610293 B2 US8610293 B2 US 8610293B2 US 96774610 A US96774610 A US 96774610A US 8610293 B2 US8610293 B2 US 8610293B2
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- resin composition
- silicone rubber
- curable silicone
- silica
- refractive index
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- 239000011342 resin composition Substances 0.000 title claims abstract description 68
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 230000003287 optical effect Effects 0.000 title claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 25
- 239000000945 filler Substances 0.000 claims abstract description 24
- 239000000203 mixture Substances 0.000 claims description 39
- 229920001296 polysiloxane Polymers 0.000 claims description 24
- 229920002379 silicone rubber Polymers 0.000 claims description 19
- 239000004945 silicone rubber Substances 0.000 claims description 18
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- 125000003118 aryl group Chemical group 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 11
- 125000003342 alkenyl group Chemical group 0.000 claims description 10
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 claims description 9
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 7
- 239000002683 reaction inhibitor Substances 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 125000001931 aliphatic group Chemical group 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- 229910052771 Terbium Inorganic materials 0.000 claims description 4
- 239000003054 catalyst Substances 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229920005989 resin Polymers 0.000 abstract description 13
- 239000011347 resin Substances 0.000 abstract description 13
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 10
- 239000000843 powder Substances 0.000 abstract description 10
- 229920002050 silicone resin Polymers 0.000 abstract description 3
- 238000002845 discoloration Methods 0.000 description 10
- -1 siloxanes Chemical class 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 238000005336 cracking Methods 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000035939 shock Effects 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 4
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 150000003377 silicon compounds Chemical class 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- KOMNUTZXSVSERR-UHFFFAOYSA-N 1,3,5-tris(prop-2-enyl)-1,3,5-triazinane-2,4,6-trione Chemical compound C=CCN1C(=O)N(CC=C)C(=O)N(CC=C)C1=O KOMNUTZXSVSERR-UHFFFAOYSA-N 0.000 description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 2
- SKFMZOKZHCOXBK-UHFFFAOYSA-N C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C=C[Si](C)(C)O[Si](C)(O[Si](C)(C)C=C)C1=CC=CC=C1.C=C[Si](C)(C)O[Si](C)(O[Si](C)(C=C)C1=CC=CC=C1)C1=CC=CC=C1.C=C[Si](C)(C)O[Si](O[Si](C)(C)C=C)(C1=CC=CC=C1)C1=CC=CC=C1.C=C[Si](C)(C=C)O[Si](C)(C)O[Si](=O)(C1=CC=CC=C1)(C1=CC=CC=C1)[Si](C)(C=C)C=C.C=C[Si](C=C)(C=C)O[Si](C)(C)O[Si](=O)(C1=CC=CC=C1)(C1=CC=CC=C1)[Si](C=C)(C=C)C=C.C=C[Si](C=C)(O[Si](C)(C)O[Si](=O)(C1=CC=CC=C1)(C1=CC=CC=C1)[Si](=O)(C=C)(C=C)C1=CC=CC=C1)C1=CC=CC=C1.C=C[Si](O[Si](C)(C)O[Si](C=C)(C1=CC=CC=C1)C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 Chemical compound C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C.C=C[Si](C)(C)O[Si](C)(O[Si](C)(C)C=C)C1=CC=CC=C1.C=C[Si](C)(C)O[Si](C)(O[Si](C)(C=C)C1=CC=CC=C1)C1=CC=CC=C1.C=C[Si](C)(C)O[Si](O[Si](C)(C)C=C)(C1=CC=CC=C1)C1=CC=CC=C1.C=C[Si](C)(C=C)O[Si](C)(C)O[Si](=O)(C1=CC=CC=C1)(C1=CC=CC=C1)[Si](C)(C=C)C=C.C=C[Si](C=C)(C=C)O[Si](C)(C)O[Si](=O)(C1=CC=CC=C1)(C1=CC=CC=C1)[Si](C=C)(C=C)C=C.C=C[Si](C=C)(O[Si](C)(C)O[Si](=O)(C1=CC=CC=C1)(C1=CC=CC=C1)[Si](=O)(C=C)(C=C)C1=CC=CC=C1)C1=CC=CC=C1.C=C[Si](O[Si](C)(C)O[Si](C=C)(C1=CC=CC=C1)C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 SKFMZOKZHCOXBK-UHFFFAOYSA-N 0.000 description 2
- 229910020485 SiO4/2 Inorganic materials 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 238000007259 addition reaction Methods 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000002050 diffraction method Methods 0.000 description 2
- 125000005388 dimethylhydrogensiloxy group Chemical group 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920001843 polymethylhydrosiloxane Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical group CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 1
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 description 1
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- PRQREXSTQVWUGV-UHFFFAOYSA-N 6-ethenoxy-6-oxohexanoic acid Chemical compound OC(=O)CCCCC(=O)OC=C PRQREXSTQVWUGV-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- FWAFYWSMKJKQJI-UHFFFAOYSA-N C=C[Si](C)(C)O[Si](C)(C)O[Si](O[Si](C)(C)C=C)(C1=CC=CC=C1)C1=CC=CC=C1 Chemical compound C=C[Si](C)(C)O[Si](C)(C)O[Si](O[Si](C)(C)C=C)(C1=CC=CC=C1)C1=CC=CC=C1 FWAFYWSMKJKQJI-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910020487 SiO3/2 Inorganic materials 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 229930003270 Vitamin B Natural products 0.000 description 1
- XPBLAVUZCQLGOW-UHFFFAOYSA-N [H][Si](C)(C)O[Si](C)(O)O[Si](O[Si]([H])(C)C)(O[Si]([H])(C)C)c1ccccc1.[H][Si](C)(C)O[Si](O)(O)O[Si](O[Si]([H])(C)C)(O[Si]([H])(C)C)O[Si]([H])(C)C.[H][Si](C)(C)O[Si](O[Si]([H])(C)C)(O[Si](C)(C)O[Si](O[Si]([H])(C)C)(O[Si]([H])(C)C)c1ccccc1)c1ccccc1.[H][Si](C)(C)O[Si](O[Si]([H])(C)C)(O[Si]([H])(C)C)O[Si](C)(C)O[Si](O[Si]([H])(C)C)(O[Si]([H])(C)C)O[Si]([H])(C)C Chemical compound [H][Si](C)(C)O[Si](C)(O)O[Si](O[Si]([H])(C)C)(O[Si]([H])(C)C)c1ccccc1.[H][Si](C)(C)O[Si](O)(O)O[Si](O[Si]([H])(C)C)(O[Si]([H])(C)C)O[Si]([H])(C)C.[H][Si](C)(C)O[Si](O[Si]([H])(C)C)(O[Si](C)(C)O[Si](O[Si]([H])(C)C)(O[Si]([H])(C)C)c1ccccc1)c1ccccc1.[H][Si](C)(C)O[Si](O[Si]([H])(C)C)(O[Si]([H])(C)C)O[Si](C)(C)O[Si](O[Si]([H])(C)C)(O[Si]([H])(C)C)O[Si]([H])(C)C XPBLAVUZCQLGOW-UHFFFAOYSA-N 0.000 description 1
- RKNWEDONPPWJNO-UHFFFAOYSA-N [H][Si](C)(C)O[Si]([H])(C)O[Si](C)(C)O[Si]([H])(C)C Chemical compound [H][Si](C)(C)O[Si]([H])(C)O[Si](C)(C)O[Si]([H])(C)C RKNWEDONPPWJNO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 229940106691 bisphenol a Drugs 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000805 composite resin Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- PGZIKUPSQINGKT-UHFFFAOYSA-N dialuminum;dioxido(oxo)silane Chemical compound [Al+3].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O PGZIKUPSQINGKT-UHFFFAOYSA-N 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- HOMYFVKFSFMSFF-UHFFFAOYSA-N ethenyl-[ethenyl(diphenyl)silyl]oxy-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(C=C)O[Si](C=C)(C=1C=CC=CC=1)C1=CC=CC=C1 HOMYFVKFSFMSFF-UHFFFAOYSA-N 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 150000002432 hydroperoxides Chemical class 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910021495 keatite Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- XHIBIZYPCKQDCU-UHFFFAOYSA-N tris(ethenyl)-[ethenyl(diphenyl)silyl]oxysilane Chemical compound C=1C=CC=CC=1[Si](C=C)(O[Si](C=C)(C=C)C=C)C1=CC=CC=C1 XHIBIZYPCKQDCU-UHFFFAOYSA-N 0.000 description 1
- 235000019156 vitamin B Nutrition 0.000 description 1
- 239000011720 vitamin B Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Definitions
- the present invention relates to a resin composition for encapsulating an optical semiconductor element. More particularly, the present invention relates to a resin composition for encapsulating an optical semiconductor element imparting a cured product having good transparency and thermal conductivity and also to an optical semiconductor device encapsulated with a cured product of the resin composition.
- Any resin composition for coating and protecting optical semiconductor elements such as light-emitting diodes (LED) is required to give a transparent cured product.
- the composition comprising an epoxy resin such as bisphenol-A type or an alicyclic epoxy resin and an acid anhydride curing agent has been generally used. (See Japanese Patent No. 3241338 and JP-A H7-25987.)
- the conventional transparent epoxy resin is poor in light resistance on account of its low transmittance for short-wave light or liable to discoloration due to light-induced degradation.
- a resin composition for coating and protecting for an optical semiconductor element comprising an alkenyl group-containing silicon compound having at least two carbon-carbon double bonds in one molecule, a silicon compound having at least two SiH groups in one molecule, and a hydrosilylating catalyst.
- such a cured product of the silicone composition especially a cured product of the silicone composition having a refractive index of up to 1.45, has a drawback that the cured product has a large gas permeability and hence permit permeation of sulfide gas existing in the storage and operation environment, when compared with the conventional epoxy resin compositions.
- the sulfide gas permeating the silicone cured product would react with the silver-plated surface of a lead frame substrate of LED package, thereby changing the plated silver to silver sulfide by sulfide reaction, resulting in blackening of the silver-plated surface.
- LEDs have become brighter than before in proportion to the increasing current supplied to them. This leads to a considerable heat generation from the chip to such an extent that heat dissipation only from the lead frame is not enough to keep the junction temperature low. The resulting high temperature brings about degradation of encapsulated resin and die-bonding resin, which is responsible for short-lived LEDs.
- the light-emitting semiconductor device such as white LED is usually composed of a die pad of reflector having a lead frame and a light-emitting element supported thereon, which are encapsulated with a thermosetting resin such as silicone resin containing a fluorescent substance.
- the light-emitting element such as LED generates intense light and high heat. The light and heat degrade the encapsulated resin near the element although heat dissipates through the lead frame. This phenomenon is conspicuous particularly on the element's surface where there exists the fluorescent substance.
- the encapsulated resin in contact with the element's surface easily deteriorates because it receives an intense light and accumulates heat.
- An object of the present invention is to provide a resin composition for encapsulating an optical semiconductor device which imparts a cured product having good heat conductivity and high transparency as well as giving excellent dissipating effect that the heat generated from a light-emitting element can be dissipated not only from a lead frame but only from an encapsulated resin surface. Another object is to provide an optical semiconductor device encapsulated with the resin composition.
- the present inventors carried out intensive investigations to find out that the above object is achieved if a resin composition for encapsulating an optical semiconductor element is formed from a curable resin composition and a specific silica-based filler which differs in refractive index by ⁇ 0.03 from the cured product of the curable resin composition (without filler) and has a thermal conductivity of at least 0.5 W/m ⁇ K.
- the present invention provides the following resin composition for encapsulating an optical semiconductor element and an optical semiconductor device encapsulated with the resin composition.
- the resin composition for encapsulating an optical semiconductor element imparts a cured product which permits efficient heat dissipation and prevents the deterioration of reflectivity and brightness due to the discoloration of silver by sulfidization and which withstands thermal stress test such as reflow with moisture absorption and thermal shock test, thereby ensuring a long-term reliability.
- FIG. 1 is a schematic sectional view showing one embodiment of the LED device pertaining to the present invention.
- the resin composition for encapsulating an optical semiconductor element is composed of a curable resin composition and a specific silica-based filler incorporated therein.
- the curable resin composition used for the present invention includes an epoxy resin composition composed mainly of an alicyclic epoxy resin, a resin composition composed of a composite resin of an epoxy resin and a silicone resin, and a silicone rubber composition of condensation curable type or heat curable type.
- an addition curable silicone rubber composition consisting of the following components:
- Component (A) is an organopolysiloxane represented by the following general formula (1): R 1 R 2 R 3 SiO—(R 4 R 5 SiO) a —(R 6 R 7 SiO) b —SiR 1 R 2 R 3 (1) wherein R 1 denotes a monovalent hydrocarbon group having noncovalent double bonds, R 2 to R 7 denote identical or different monovalent hydrocarbon groups, more specifically each of R 4 to R 7 denotes a monovalent hydrocarbon group having no aliphatic unsaturated bond, and R 6 and/or R 7 denotes an aliphatic monovalent hydrocarbon group, and a and b are integers defined by 0 ⁇ a+b ⁇ 500, preferably 10 ⁇ a+b ⁇ 500; 0 ⁇ a ⁇ 500, preferably 10 ⁇ a ⁇ 500; and 0 ⁇ b ⁇ 250, preferably 0 ⁇ b ⁇ 150.
- R 1 denotes a monovalent hydrocarbon group having noncovalent double bonds
- R 2 to R 7 denote identical or different monovalent hydrocarbon groups
- R 1 should preferably be an aliphatic unsaturated group such as an alkenyl group having 2 to 6 carbon atoms.
- Each of R 2 to R 7 should preferably be has 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms.
- Examples of R 2 to R 7 include an alkyl group, alkenyl group, aryl group, or aralkyl group. Preferable among them are an alkyl group, aryl group, and aralkyl group, which do not have aliphatic unsaturated bonds unlike alkenyl groups.
- R 6 and/or R 7 should preferably be an aromatic monovalent hydrocarbon group such as an aryl group having 6 to 12 carbon atoms including phenyl group, tolyl group.
- the organopolysiloxane represented by formula (1) above can be obtained by alkali equilibrating reaction between cyclic diorganopolyiloxane and disiloxane, the former including cyclic diphenylpolysiloxane and cyclic methylphenylpolysiloxane as the constituent of the main chain and the latter including diphenyltetravinyldisiloxane and divinyltetraphenyldisiloxane as the constituent of the terminal group.
- the foregoing siloxanes usually do not contain silanol groups and chlorine.
- k and m are integers that satisfy 0 ⁇ k+m ⁇ 500, preferably 5 ⁇ k+m ⁇ 250, and 0 ⁇ m/(k+m) ⁇ 0.5.
- the organopolysiloxane of straight-chain structure represented by formula (1) above may be used in combination with an organopolysiloxane of three-dimensional network structure containing three-functional siloxane units or four-functional siloxane units, according to need.
- the content of noncovalent double bonds such as an alkenyl group in component (A) should be 1 to 50 mol %, preferably 2 to 40 mol %, more preferably 5 to 30 mol %, of the total amount of monovalent hydrocarbon groups (R 1 to R 7 ). With a content less than 1 mol %, the cured product is not obtained as desired. With a content more than 50 mol %, the resulting cured product is poor in mechanical properties.
- the content of aromatic groups in component (A) should be 0 to 95 mol %, preferably 10 to 90 mol %, more preferably 20 to 80 mol %, of the total amount of monovalent hydrocarbon groups (R 1 to R 7 ).
- An adequate amount of aromatic groups in the resin contributes to good mechanical properties and good processability. Moreover, aromatic groups help control the refractive index.
- Component (B) is an organohydrogenpolysiloxane having two or more hydrogen atoms attached to a silicon atom (i.e., SiH group) in one molecule. It functions as a crosslinking agent for addition reaction between the SiH group and the noncovalent double bond such as the alkenyl group (typically, vinyl group) in component (A). The addition reaction yields the cured product.
- the organohydrogenpolysiloxane may have one or more aromatic hydrocarbon groups so that it is highly compatible with component (A) having a high refractive index and it yields a transparent cured product. Therefore, component (B) may be composed partly or entirely of organohydrogenpolysiloxane having one or more aromatic monovalent hydrocarbon groups.
- the organohydrogenpolysiloxane may have any molecular structure, such as linear, cyclic, branched, and three-dimensional network. In addition, it may have 2 to 1000, preferably 2 to 300 silicon atoms in one molecule. The number of silicon atoms represents the degree of polymerization.
- organohydrogenpolysiloxane are those which are composed of such structural units as shown below.
- the organohydrogenpolysiloxane should preferably be incorporated into the resin composition in an amount sufficient to provide 0.7 to 3.0 of SiH groups in component (B) per noncovalent double bond (typically alkenyl group) in component (A).
- Component (C) is a platinum catalyst, which includes chloroplatinic acid, alcohol-modified chloroplatinic acid, and platinum complex of chelate structure. They may be used alone or in combination with one another.
- Component (C) should be used in a catalytic amount which is effective for curing, and preferably be 0.1 to 500 ppm, more preferably 0.5 to 100 ppm in terms of platinum for 100 parts by weight of the total amount of components (A) and (B).
- Component (D) is a reaction inhibitor (cure regulator) which can impart storage stability to the composition.
- Any reaction inhibitors are used so long as they can inhibit the progress of curing upon storage.
- the reaction inhibitors include acetylene alcohol or its derivatives, triallylisocyanurate or its derivatives, alkyl maleates, hydroperoxides tetramethyl ethylenediamine, benzotriazol, and mixtures thereof.
- Acetylene alcohol or its derivatives and triallylisocyanurate or its derivatives are preferred because they do not injure the curability of the composition and imparts excellent storage stability to the composition.
- the amount of the reaction inhibitor is 1 to 10,000 ppm, preferably 5 to 5,000 ppm for the total amount of the addition curable silicone rubber composition.
- Component (E) is a silane coupling agent which is optionally incorporated for imparting adhesive properties.
- silane coupling agents include:
- the amount of the silane coupling agent should be no more than 10 wt %, preferably no more than 5 wt %, (both including zero) for the total amount of the addition curable silicone rubber composition. In case of incorporating the silane coupling agent, the amount is preferably 0.1 wt % or more.
- component (F) is incorporated into the curable resin composition, particularly the silicone rubber composition of addition-curable type consisting of components (A) to (E).
- Component (F) is a silica-based filler which differs in refractive index by ⁇ 0.03 from the cured product of the resin composition, particulary the silicone rubber composition of addition-curable type and has a thermal conductivity of up to 0.5 W/m ⁇ K, preferably 0.5 to 2.0 W/m ⁇ K.
- the above-mentioned curable composition yields a cured product which varies in refractive index depending on the ratio of alkyl groups such as methyl groups to aryl groups such as phenyl groups attached to the silicon atoms.
- the cured product has a refractive index of about 1.4 to 1.6. Therefore, the silica-based filler should preferably have a refractive index of 1.45 to 1.55 so that the above-mentioned requirement ⁇ 0.03 in difference is satisfied.
- silica-based filler examples include silica powder such as cristobalite, tridymite, quartz, and keatite and silicon-metal complex oxide such as aluminosilicate.
- the silica-based filler should be in the form of powder having a particle size of 0.01 to 75 ⁇ m and a mean particle diameter of 1 to 30 ⁇ m, preferably 0.5 to 25 ⁇ m, more preferably 1 to 15 ⁇ m.
- the powder may have any shape ranging from irregular (as crushed) to spherical. It should preferably be spherical, with sphericity being 0.8 to 1.0.
- the particle size is measured by a particle size distribution measuring apparatus that employs the laser beam diffraction method.
- the mean particle diameter is expressed in terms of cumulative weight-average value D 50 (or median diameter) measured by a particle size distribution measuring apparatus that employs the laser beam diffraction method.
- the sphericity is expressed as a ratio of A/B wherein A is the longest major axis and B is the shortest minor axis of the powder in SEM (scanning transmission electron microscope) observation.
- spherical cristobalite is particularly preferable.
- Cristobalite is usually available in the form of irregular grains (as crushed).
- spherical cristobalite can be produced from fused silica by the method disclosed in JP-A 2008-162849. This method permits fused silica to turn into cristobalite while keeping its shape and particle size distribution.
- the silica-based filler should preferably be added in an amount of 5 to 150 parts by weight, preferably 10 to 100 parts by weight for 100 parts by weight of the above-mentioned curable resin composition. With an amount less than 5 parts by weight, it does not fully produce the heat dissipating effect. With an amount in excess of 150 parts by weight, it impairs workability due to increased viscosity.
- the resin composition for encapsulating an optical semiconductor element according to the present invention is useful to encapsulate LED elements, particularly those of blue, white, and violet.
- the blue LED emits white light when incorporated with a fluorescent powder selected from any known ones listed below.
- the resin composition according to the present invention may be incorporated with one of these fluorescent substances in an amount of 1 to 50 parts by weight for 100 parts by weight of the resin composition, for conversion of blue light into white light.
- the resin composition for encapsulating an optical semiconductor element according to the present invention may contain a variety of additives as listed below in an amount not harmful to the performance of the optical semiconductor device.
- the resin composition for encapsulating an optical semiconductor element can be prepared by evenly mixing the above components.
- the resin composition may be prepared and stored as a two-part system, when used, they are mixed. In this case, component (B) and component (C) are separately stored.
- the resin composition may be prepared as a one-part system by incorporating the reaction inhibitor to the composition.
- the resin composition according to the present invention is used to encapsulate varies optical semiconductor elements which are not specifically restricted. They include, for example, light-emitting diode, phototransistor, photodiode, CCD, solar cell module, EPROM, and photocoupler. Light-emitting diodes are most suitable.
- Encapsulation or sealing may be accomplished in the usual way adopted for individual semiconductors. After encapsulation, the resin composition is cured at room temperature to about 200° C. for tens of seconds to several days, preferably at 80 to 180° C. for 1 minute to 10 hours.
- FIG. 1 shows one example of the LED light-emitting device which is encapsulated with the resin composition of the present invention.
- the LED is made up of (1) LED chip, (2) conductive wire, (3) silver-plated lead frame, (4) cured product of the resin composition, (5) mold package, (6) silica-based filler, and (7) fluorescent substance.
- the optical semiconductor device which has its optical semiconductor element covered and protected with the cured product of the resin composition of the present invention exhibits good heat resistance, moisture resistance, and light resistance and hence keeps its substrate surface from discoloration by environmental effects.
- the present invention provides a highly reliable optical semiconductor device, which is a great contribution to the industry.
- a silicone composition was prepared by thorough stirring from 100 parts by weight of dimethyldiphenylpolysiloxane with terminal vinyl groups having a viscosity of 3 Pa ⁇ s which is represented by the following formula (I):
- the cured product of this silicone composition had a refractive index of 1.51.
- Example 1 100 parts by weight of the silicone composition mentioned above was mixed with 30 parts by weight of cristobalite powder having a refractive index of 1.53 and a mean particle diameter of 5 ⁇ m and 5 parts by weight of YAG (fluorescent substance). The resulting composition was used to encapsulate the LED package shown in FIG. 1 .
- Example 2 the foregoing procedure was repeated except that the amount of cristobalite powder was changed to 50 parts by weight.
- Example 3 100 parts by weight of the silicone composition mentioned above was mixed with 10 parts by weight of cristobalite powder having a refractive index of 1.53 and 5 parts by weight of YAG. The resulting composition was used to encapsulate the LED package.
- Example 4 the foregoing procedure was repeated except that the amount of cristobalite powder was changed to 80 parts by weight.
- the above-mentioned silicone composition was used alone to encapsulate the LED package.
- the LED package which had been encapsulated with the liquid silicone composition mentioned above was kept at 150° C. for 4 hours so that the silicone composition was cured. Thus there was obtained the light-emitting diode for evaluation.
- the samples were allowed to stand at 85° C. and 60% RH for 168 hours and then passed through an IR reflow furnace at 260° C. three times.
- the cured resin was examined for defects (such as peeling and cracking) under a microscope.
- Ten samples free of peeling and cracking were tested for light emitting by application of 120 mA.
- the performance (heat generation and heat dissipation) of LED is usually expressed in terms of the temperature (T j ) of the PN junction the LED chip. The lower this temperature, the better the heat dissipation.
- the LED sample which had undergone light-emitting test was examined for thermal shock at ⁇ 40° C. for 30 minutes and at 120° C. for 30 minutes (500 cycles). After thermal shock testing, the sample was examined for defects (such as peeling and cracking) under a microscope in the same way as mentioned above. In addition, the sample was allowed to stand in an atmosphere of 2% hydrogen sulfide for 48 hours, and then the sample was examined under a microscope for discoloration of silver plating on the package.
- Tackiness of the surface of the cured product was evaluated by the touch. Then, the cured product was set into commercially available silver powder having a mean particle size of 5 ⁇ m. After the cure product was taken out, air was blown the cured product to judge whether or not the silver powder was blown out therefrom.
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Abstract
A resin composition containing a silica-based filler which differs in refractive index by ±0.03 from the curable base resin and has a thermal conductivity no lower than 0.5 W/m·K, and a light-emitting diode encapsulated with said resin composition. The resin composition is preferably prepared from a curable silicone resin which imparts a cured product having a refractive index of 1.45 to 1.55 and cristobalite powder dispersed therein.
Description
This non-provisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 2009-283736 filed in Japan on Dec. 15, 2009, the entire contents of which are hereby incorporated by reference.
The present invention relates to a resin composition for encapsulating an optical semiconductor element. More particularly, the present invention relates to a resin composition for encapsulating an optical semiconductor element imparting a cured product having good transparency and thermal conductivity and also to an optical semiconductor device encapsulated with a cured product of the resin composition.
Any resin composition for coating and protecting optical semiconductor elements such as light-emitting diodes (LED) is required to give a transparent cured product. The composition comprising an epoxy resin such as bisphenol-A type or an alicyclic epoxy resin and an acid anhydride curing agent has been generally used. (See Japanese Patent No. 3241338 and JP-A H7-25987.)
The conventional transparent epoxy resin, however, is poor in light resistance on account of its low transmittance for short-wave light or liable to discoloration due to light-induced degradation. To solve this problem, there have been proposed a resin composition for coating and protecting for an optical semiconductor element comprising an alkenyl group-containing silicon compound having at least two carbon-carbon double bonds in one molecule, a silicon compound having at least two SiH groups in one molecule, and a hydrosilylating catalyst. (See JP-A 2001-002922 and WO 2006/77667.)
However, such a cured product of the silicone composition, especially a cured product of the silicone composition having a refractive index of up to 1.45, has a drawback that the cured product has a large gas permeability and hence permit permeation of sulfide gas existing in the storage and operation environment, when compared with the conventional epoxy resin compositions. Thus, the sulfide gas permeating the silicone cured product would react with the silver-plated surface of a lead frame substrate of LED package, thereby changing the plated silver to silver sulfide by sulfide reaction, resulting in blackening of the silver-plated surface.
Recently, LEDs have become brighter than before in proportion to the increasing current supplied to them. This leads to a considerable heat generation from the chip to such an extent that heat dissipation only from the lead frame is not enough to keep the junction temperature low. The resulting high temperature brings about degradation of encapsulated resin and die-bonding resin, which is responsible for short-lived LEDs.
There has recently been proposed a way of solving the above-mentioned problem with sulfidization of silver-plated surface by using a silicone cured product having a refractive index of at least 1.45 which has a comparatively small gas permeability. However, this silicone cured product is still subject to discoloration because the recent light-emitting elements are intended for high emitting efficiency accompanied by high heat generation.
The light-emitting semiconductor device such as white LED is usually composed of a die pad of reflector having a lead frame and a light-emitting element supported thereon, which are encapsulated with a thermosetting resin such as silicone resin containing a fluorescent substance. The light-emitting element such as LED generates intense light and high heat. The light and heat degrade the encapsulated resin near the element although heat dissipates through the lead frame. This phenomenon is conspicuous particularly on the element's surface where there exists the fluorescent substance. The encapsulated resin in contact with the element's surface easily deteriorates because it receives an intense light and accumulates heat.
An object of the present invention is to provide a resin composition for encapsulating an optical semiconductor device which imparts a cured product having good heat conductivity and high transparency as well as giving excellent dissipating effect that the heat generated from a light-emitting element can be dissipated not only from a lead frame but only from an encapsulated resin surface. Another object is to provide an optical semiconductor device encapsulated with the resin composition.
The present inventors carried out intensive investigations to find out that the above object is achieved if a resin composition for encapsulating an optical semiconductor element is formed from a curable resin composition and a specific silica-based filler which differs in refractive index by ±0.03 from the cured product of the curable resin composition (without filler) and has a thermal conductivity of at least 0.5 W/m·K.
Accordingly, the present invention provides the following resin composition for encapsulating an optical semiconductor element and an optical semiconductor device encapsulated with the resin composition.
- [1] A resin composition for encapsulating an optical semiconductor element comprising a curable resin composition and a silica-based filler which differs in refractive index by ±0.03 from a cured product of the curable resin composition and has a thermal conductivity of at least 0.5 W/m·K.
- [2] The resin composition of [1] which further comprises a fluorescent substance.
- [3] The resin composition of [1] or [2] wherein the content of the silica-based filler is 5 to 150 parts by weight for 100 parts by weight of the curable resin composition.
- [4] The resin composition of any one of [1] to [3] wherein the silica-based filler has a refractive index of 1.45 to 1.55.
- [5] The resin composition of any one of [1] to [4] wherein the silica-based filler has a cristobalite structure.
- [6] The resin composition of [5] wherein the silica-based filler having the cristobalite structure has a particle size of 0.01 to 75 μm and a sphericity of 0.8 to 1.0.
- [7] The resin composition of any one of [1] to [6] wherein the curable resin composition is a curable silicone rubber composition.
- [8] The resin composition of [7] wherein the curable resin composition is an addition-curable silicone rubber composition.
- [9] An optical semiconductor device in which an optical semiconductor element is encapsulated with a cured product of the resin composition of any one of [1] to [8].
According to the present invention, the resin composition for encapsulating an optical semiconductor element imparts a cured product which permits efficient heat dissipation and prevents the deterioration of reflectivity and brightness due to the discoloration of silver by sulfidization and which withstands thermal stress test such as reflow with moisture absorption and thermal shock test, thereby ensuring a long-term reliability.
According to the present invention, the resin composition for encapsulating an optical semiconductor element is composed of a curable resin composition and a specific silica-based filler incorporated therein.
The curable resin composition used for the present invention includes an epoxy resin composition composed mainly of an alicyclic epoxy resin, a resin composition composed of a composite resin of an epoxy resin and a silicone resin, and a silicone rubber composition of condensation curable type or heat curable type. Preferable among them is an addition curable silicone rubber composition consisting of the following components:
- (A) an organic silicon compound having noncovalent double bonds; particularly, an organopolysiloxane having two or more alkenyl groups in one molecule,
- (B) an organohydrogenpolysiloxane,
- (C) a platinum catalyst,
- (D) a reaction inhibitor, and
- (E) a silane coupling agent.
Component (A)
Component (A) is an organopolysiloxane represented by the following general formula (1):
R1R2R3SiO—(R4R5SiO)a—(R6R7SiO)b—SiR1R2R3 (1)
wherein R1 denotes a monovalent hydrocarbon group having noncovalent double bonds, R2 to R7 denote identical or different monovalent hydrocarbon groups, more specifically each of R4 to R7 denotes a monovalent hydrocarbon group having no aliphatic unsaturated bond, and R6 and/or R7 denotes an aliphatic monovalent hydrocarbon group, and a and b are integers defined by 0≦a+b≦500, preferably 10≦a+b≦≦500; 0≦a≦500, preferably 10<a≦500; and 0≦b≦250, preferably 0≦b≦150.
R1R2R3SiO—(R4R5SiO)a—(R6R7SiO)b—SiR1R2R3 (1)
wherein R1 denotes a monovalent hydrocarbon group having noncovalent double bonds, R2 to R7 denote identical or different monovalent hydrocarbon groups, more specifically each of R4 to R7 denotes a monovalent hydrocarbon group having no aliphatic unsaturated bond, and R6 and/or R7 denotes an aliphatic monovalent hydrocarbon group, and a and b are integers defined by 0≦a+b≦500, preferably 10≦a+b≦≦500; 0≦a≦500, preferably 10<a≦500; and 0≦b≦250, preferably 0≦b≦150.
In the above formula, R1 should preferably be an aliphatic unsaturated group such as an alkenyl group having 2 to 6 carbon atoms. Each of R2 to R7 should preferably be has 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms. Examples of R2 to R7 include an alkyl group, alkenyl group, aryl group, or aralkyl group. Preferable among them are an alkyl group, aryl group, and aralkyl group, which do not have aliphatic unsaturated bonds unlike alkenyl groups. R6 and/or R7 should preferably be an aromatic monovalent hydrocarbon group such as an aryl group having 6 to 12 carbon atoms including phenyl group, tolyl group.
The organopolysiloxane represented by formula (1) above can be obtained by alkali equilibrating reaction between cyclic diorganopolyiloxane and disiloxane, the former including cyclic diphenylpolysiloxane and cyclic methylphenylpolysiloxane as the constituent of the main chain and the latter including diphenyltetravinyldisiloxane and divinyltetraphenyldisiloxane as the constituent of the terminal group. The foregoing siloxanes usually do not contain silanol groups and chlorine.
The following are the typical examples of the organopolysiloxane represented by formula (1) above.
As component (A), the organopolysiloxane of straight-chain structure represented by formula (1) above may be used in combination with an organopolysiloxane of three-dimensional network structure containing three-functional siloxane units or four-functional siloxane units, according to need.
The content of noncovalent double bonds such as an alkenyl group in component (A) should be 1 to 50 mol %, preferably 2 to 40 mol %, more preferably 5 to 30 mol %, of the total amount of monovalent hydrocarbon groups (R1 to R7). With a content less than 1 mol %, the cured product is not obtained as desired. With a content more than 50 mol %, the resulting cured product is poor in mechanical properties.
The content of aromatic groups in component (A) should be 0 to 95 mol %, preferably 10 to 90 mol %, more preferably 20 to 80 mol %, of the total amount of monovalent hydrocarbon groups (R1 to R7). An adequate amount of aromatic groups in the resin contributes to good mechanical properties and good processability. Moreover, aromatic groups help control the refractive index.
Component (B)
Component (B) is an organohydrogenpolysiloxane having two or more hydrogen atoms attached to a silicon atom (i.e., SiH group) in one molecule. It functions as a crosslinking agent for addition reaction between the SiH group and the noncovalent double bond such as the alkenyl group (typically, vinyl group) in component (A). The addition reaction yields the cured product.
The organohydrogenpolysiloxane may have one or more aromatic hydrocarbon groups so that it is highly compatible with component (A) having a high refractive index and it yields a transparent cured product. Therefore, component (B) may be composed partly or entirely of organohydrogenpolysiloxane having one or more aromatic monovalent hydrocarbon groups.
The organohydrogenpolysiloxane may have any molecular structure, such as linear, cyclic, branched, and three-dimensional network. In addition, it may have 2 to 1000, preferably 2 to 300 silicon atoms in one molecule. The number of silicon atoms represents the degree of polymerization.
Typical examples of the organohydrogenpolysiloxane are listed below.
- 1,1,3,3-tetramethyldisiloxane,
- 1,3,5,7-tetramethylcyclotetrasiloxane,
- tris(dimethylhydrogensiloxy)methylsilane,
- tris(dimethylhydrogensiloxy)phenylsilane,
- 1-glycidoxypropyl-1,3,5,7-tetramethylcyclotetrasiloxane,
- 1,5-glycidoxypropyl-1,3,5,7-tetramethylcyclotetrasiloxane,
- 1-glycidoxypropyl-5-trimethylsilylethyl-1,3,5,7-tetramethyl-cyclotetrasiloxane,
- methylhydrogenpolysiloxane having both ends blocked with trimethylsiloxy groups,
- dimethylsiloxane-methylhydrogensiloxane copolymer having both ends blocked with trimethylsiloxy groups,
- dimethylpolysiloxane having both ends blocked with dimethylhydrogensiloxy groups,
- dimethylsiloxane-methylhydrogensiloxane copolymer having both ends blocked with dimethylhydrogensiloxy groups,
- methylhydrogensiloxane-diphenylsiloxane copolymer having both ends blocked with trimethylsiloxy groups,
- methylhydrogensiloxane-diphenylsiloxane-dimethylsiloxane copolymer having both ends blocked with trimethylsiloxy groups,
- trimethoxysilane polymer,
- copolymer composed of (CH3)2HSiO1/2 unit and SiO4/2 unit, and
- copolymer composed of (CH3)2HSiO1/2 unit, SiO4/2 unit, and
- (C6H5)SiO3/2 unit.
Additional examples of the organohydrogenpolysiloxane are those which are composed of such structural units as shown below.
The organohydrogenpolysiloxane should preferably be incorporated into the resin composition in an amount sufficient to provide 0.7 to 3.0 of SiH groups in component (B) per noncovalent double bond (typically alkenyl group) in component (A).
Component (C)
Component (C) is a platinum catalyst, which includes chloroplatinic acid, alcohol-modified chloroplatinic acid, and platinum complex of chelate structure. They may be used alone or in combination with one another.
Component (C) should be used in a catalytic amount which is effective for curing, and preferably be 0.1 to 500 ppm, more preferably 0.5 to 100 ppm in terms of platinum for 100 parts by weight of the total amount of components (A) and (B).
Component (D)
Component (D) is a reaction inhibitor (cure regulator) which can impart storage stability to the composition. Any reaction inhibitors are used so long as they can inhibit the progress of curing upon storage. Examples of the reaction inhibitors include acetylene alcohol or its derivatives, triallylisocyanurate or its derivatives, alkyl maleates, hydroperoxides tetramethyl ethylenediamine, benzotriazol, and mixtures thereof. Acetylene alcohol or its derivatives and triallylisocyanurate or its derivatives are preferred because they do not injure the curability of the composition and imparts excellent storage stability to the composition.
The amount of the reaction inhibitor is 1 to 10,000 ppm, preferably 5 to 5,000 ppm for the total amount of the addition curable silicone rubber composition.
Component (E)
Component (E) is a silane coupling agent which is optionally incorporated for imparting adhesive properties. Examples of the silane coupling agents include:
- vinyltrimethoxysilane, vinyltriethoxysilane,
- 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane,
- 3-glycidoxypropyltrimethoxysilane,
- 3-glycidoxypropylmethyldiethoxysilane,
- 3-glycidoxypropyltriethoxysilane,
- 3-mathacryloxypropylmethyldimethoxysilane,
- 3-methacryloxypropyltrimethoxysilane,
- 3-methacryloxypropylmethyldiethoxysilane,
- 3-methacryloxypropyltriethoxysilane,
- N-2(ethylamino)3-aminopropylmethyldimethoxysilane,
- N-2(ethylamino)3-aminopropyltrimethoxysilane,
- N-2(ethylamino)3-aminopropyltriethoxysilane,
- 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane,
- N-phenyl-3-aminopropyltrimethoxysilane, and
- 3-mercaptopropyltrimethoxysilane. Additional examples include trimethoxysilane and tetramethoxysilane and oligomers thereof. These silane coupling agents may be used alone or in combination with one another.
The amount of the silane coupling agent should be no more than 10 wt %, preferably no more than 5 wt %, (both including zero) for the total amount of the addition curable silicone rubber composition. In case of incorporating the silane coupling agent, the amount is preferably 0.1 wt % or more.
Component (F)
In the resin composition according to the present invention, component (F) is incorporated into the curable resin composition, particularly the silicone rubber composition of addition-curable type consisting of components (A) to (E). Component (F) is a silica-based filler which differs in refractive index by ±0.03 from the cured product of the resin composition, particulary the silicone rubber composition of addition-curable type and has a thermal conductivity of up to 0.5 W/m·K, preferably 0.5 to 2.0 W/m·K.
The above-mentioned curable composition, particularly the silicon rubber composition of addition-curable type, yields a cured product which varies in refractive index depending on the ratio of alkyl groups such as methyl groups to aryl groups such as phenyl groups attached to the silicon atoms. The cured product has a refractive index of about 1.4 to 1.6. Therefore, the silica-based filler should preferably have a refractive index of 1.45 to 1.55 so that the above-mentioned requirement ±0.03 in difference is satisfied.
Examples of the silica-based filler include silica powder such as cristobalite, tridymite, quartz, and keatite and silicon-metal complex oxide such as aluminosilicate. The silica-based filler should be in the form of powder having a particle size of 0.01 to 75 μm and a mean particle diameter of 1 to 30 μm, preferably 0.5 to 25 μm, more preferably 1 to 15 μm. The powder may have any shape ranging from irregular (as crushed) to spherical. It should preferably be spherical, with sphericity being 0.8 to 1.0. Incidentally, the particle size is measured by a particle size distribution measuring apparatus that employs the laser beam diffraction method. The mean particle diameter is expressed in terms of cumulative weight-average value D50 (or median diameter) measured by a particle size distribution measuring apparatus that employs the laser beam diffraction method. The sphericity is expressed as a ratio of A/B wherein A is the longest major axis and B is the shortest minor axis of the powder in SEM (scanning transmission electron microscope) observation.
Among the silica-based fillers described above, spherical cristobalite is particularly preferable. Cristobalite is usually available in the form of irregular grains (as crushed). However, spherical cristobalite can be produced from fused silica by the method disclosed in JP-A 2008-162849. This method permits fused silica to turn into cristobalite while keeping its shape and particle size distribution.
The silica-based filler should preferably be added in an amount of 5 to 150 parts by weight, preferably 10 to 100 parts by weight for 100 parts by weight of the above-mentioned curable resin composition. With an amount less than 5 parts by weight, it does not fully produce the heat dissipating effect. With an amount in excess of 150 parts by weight, it impairs workability due to increased viscosity.
The resin composition for encapsulating an optical semiconductor element according to the present invention is useful to encapsulate LED elements, particularly those of blue, white, and violet. The blue LED emits white light when incorporated with a fluorescent powder selected from any known ones listed below.
-
- Garnet represented by the general formula A3B50O12:M (where, A denotes at least one element selected from the group consisting of Y, Gd, Tb, La, Lu, Se, and Sm; B denotes at least one element selected from the group consisting of Al, Ga, and In; and M denotes at least one element selected from the group consisting of Ce, Pr, Eu, Cr, Nd, and Er.) This is suitable for yellow light emission.
- Fluorescent substance represented by Y3Al5O12:Ce and/or (Y, Gd, Tb)3(Al, Ga)5O12:Ce. This is suitable for white light emission.
- Other fluorescent substances represented by CaGa2S4:Ce3+, SrGa2S4:Ce3+, YAlO3:Ce3+, YGaO3:Ce3+, Y(Al, Ga)O3:Ce3+, and Y2SiO5:Ce3+.
Mixed color light is produced by aluminate or orthosilicate doped with rare earth element. The resin composition according to the present invention may be incorporated with one of these fluorescent substances in an amount of 1 to 50 parts by weight for 100 parts by weight of the resin composition, for conversion of blue light into white light.
The resin composition for encapsulating an optical semiconductor element according to the present invention may contain a variety of additives as listed below in an amount not harmful to the performance of the optical semiconductor device.
-
- Antioxidants: BHT and vitamin B
- Anti-discoloration agent:
- organophosphorus ones
- Anti-photodegradation agent:
- hindered amine
- Reactive diluent: vinyl ether, vinylamide, epoxy resin, oxetane, allyl phthalate, and vinyl adipate.
- Reinforcing silica: fumed silica and precipitated silica.
- Flame retardancy improver
- Fluorescent substance
- Organic solvent
- Coloring agent
The resin composition for encapsulating an optical semiconductor element can be prepared by evenly mixing the above components. The resin composition may be prepared and stored as a two-part system, when used, they are mixed. In this case, component (B) and component (C) are separately stored. The resin composition may be prepared as a one-part system by incorporating the reaction inhibitor to the composition.
The resin composition according to the present invention is used to encapsulate varies optical semiconductor elements which are not specifically restricted. They include, for example, light-emitting diode, phototransistor, photodiode, CCD, solar cell module, EPROM, and photocoupler. Light-emitting diodes are most suitable.
Encapsulation or sealing may be accomplished in the usual way adopted for individual semiconductors. After encapsulation, the resin composition is cured at room temperature to about 200° C. for tens of seconds to several days, preferably at 80 to 180° C. for 1 minute to 10 hours.
The optical semiconductor device which has its optical semiconductor element covered and protected with the cured product of the resin composition of the present invention exhibits good heat resistance, moisture resistance, and light resistance and hence keeps its substrate surface from discoloration by environmental effects. Thus the present invention provides a highly reliable optical semiconductor device, which is a great contribution to the industry.
The invention will be described in more detail with reference the following Examples and Comparative Examples, which are not intended to restrict the scope thereof. Incidentally, physical properties were measured by the methods explained below.
-
- Viscosity: Measured according to JIS K 6249
- Refractive index: The silicone composition was spin coated on a silicon wafer to form a film having about 10 μm thick, and was cured at 150° C. for 4 hours. The refractive index of the cured film measured by a prism coupler (Metricon Co., Ltd.; Model 2010).
Preparation of Silicone Composition
A silicone composition was prepared by thorough stirring from 100 parts by weight of dimethyldiphenylpolysiloxane with terminal vinyl groups having a viscosity of 3 Pa·s which is represented by the following formula (I):
2.5 parts by weight of methylhydrogenpolysiloxane having a viscosity of 15 mPa·s which is represented by the following formula (II):
- 0.03 parts by weight of a solution of chloroplatinic acid modified with 2-ethylhexylalcohol,
- 0.05 parts by weight of ethynylcyclohexyl alcohol, and
- 7 parts by weight of 3-glycidoxypropyltrimethoxysilane.
The cured product of this silicone composition had a refractive index of 1.51.
In Example 1, 100 parts by weight of the silicone composition mentioned above was mixed with 30 parts by weight of cristobalite powder having a refractive index of 1.53 and a mean particle diameter of 5 μm and 5 parts by weight of YAG (fluorescent substance). The resulting composition was used to encapsulate the LED package shown in FIG. 1 .
In Example 2, the foregoing procedure was repeated except that the amount of cristobalite powder was changed to 50 parts by weight.
In Example 3, 100 parts by weight of the silicone composition mentioned above was mixed with 10 parts by weight of cristobalite powder having a refractive index of 1.53 and 5 parts by weight of YAG. The resulting composition was used to encapsulate the LED package.
In Example 4, the foregoing procedure was repeated except that the amount of cristobalite powder was changed to 80 parts by weight.
The above-mentioned silicone composition was used alone to encapsulate the LED package.
100 parts by weight of the above-mentioned silicone composition was mixed with 5 parts by weight of YAG and 10 parts by weight or 50 parts by weight of spherical silica filler having a refractive index of 1.46. The resulting composition was used to encapsulate the LED package.
The LED package which had been encapsulated with the liquid silicone composition mentioned above was kept at 150° C. for 4 hours so that the silicone composition was cured. Thus there was obtained the light-emitting diode for evaluation. The samples were allowed to stand at 85° C. and 60% RH for 168 hours and then passed through an IR reflow furnace at 260° C. three times. The cured resin was examined for defects (such as peeling and cracking) under a microscope. Ten samples free of peeling and cracking were tested for light emitting by application of 120 mA. The performance (heat generation and heat dissipation) of LED is usually expressed in terms of the temperature (Tj) of the PN junction the LED chip. The lower this temperature, the better the heat dissipation. The junction temperature (Tj), with current applied, was measured by using an LED thermal resistance measuring apparatus (made by Hitachi High-Technologies Corporation). The LED sample which had undergone light-emitting test was examined for thermal shock at −40° C. for 30 minutes and at 120° C. for 30 minutes (500 cycles). After thermal shock testing, the sample was examined for defects (such as peeling and cracking) under a microscope in the same way as mentioned above. In addition, the sample was allowed to stand in an atmosphere of 2% hydrogen sulfide for 48 hours, and then the sample was examined under a microscope for discoloration of silver plating on the package.
Evaluation of Dust Adhesion on the Surface to the Cured Product:
Tackiness of the surface of the cured product was evaluated by the touch. Then, the cured product was set into commercially available silver powder having a mean particle size of 5 μm. After the cure product was taken out, air was blown the cured product to judge whether or not the silver powder was blown out therefrom.
The samples in Examples 1 to 4 did not show any defect (such as peeling and cracking of resin) in reflow test and thermal shock test, neither did they suffer a defect of non-mitting. By contrast, the sample in Comparative Example 1 suffered resin cracking in the reflow test. The samples in Comparative Examples 2 and 3 suffered resin peeling although they did not suffer resin cracking, and some samples became incapable of emitting light.
TABLE 1 | ||
Example | Comparative Example |
1 | 2 | 3 | 4 | 1 | 2 | 3 | |
Amount of filler added | 30 | 50 | 10 | 80 | 0 | 10 | 50 |
(pbw) | |||||||
Amount of YAG added | 5 | 5 | 5 | 5 | 0 | 5 | 5 |
(pbw) | |||||||
Dust on surface | none | none | none | none | none | none | none |
Reflow | Occurrence | 0/50 | 0/50 | 0/50 | 0/50 | 0/50 | 40/50 | 45/50 |
test | of peeling | |||||||
Occurrence | 0/50 | 0/50 | 0/50 | 0/50 | 50/50 | 0/50 | 0/50 | |
of cracking | ||||||||
Thermal | Occurrence | 0/50 | 0/50 | 0/50 | 0/50 | 0/50 | 40/50 | 40/50 |
shock | of peeling | |||||||
test | Occurrence | 0/50 | 0/50 | 0/50 | 0/50 | 50/50 | 0/50 | 0/50 |
of cracking | ||||||||
Light | No light | 0/50 | 0/50 | 0/50 | 0/50 | 25/50 | 10/50 | 5/50 |
emission | emission | |||||||
test |
Discoloration of silver | None | None | Slight | None | Discoloration | Slight | None |
plating in package | discoloration | discoloration | |||||
Japanese Patent Application No. 2009-283736 is incorporated herein by reference.
Although some preferred embodiments have been described, many modifications and variations may be made thereto in light of the above teachings. It is therefore to be understood that the invention may be practiced otherwise than as specifically described without departing from the scope of the appended claims.
Claims (10)
1. A resin composition for encapsulating an optical semiconductor element comprising a curable silicone rubber resin composition and a silica-based filler having a cristobalite structure, wherein
a cured product of the curable silicone rubber composition has a refractive index of 1.4 to 1.6, and
the silica-based filler has a refractive index of 1.45 to 1.55 and differs in refractive index within ±0.03 from the cured product of the curable silicone rubber resin composition and has a thermal conductivity of at least 0.5 W/m·K.
2. The resin composition of claim 1 which further comprises a fluorescent substance.
3. The resin composition of claim 2 , wherein said fluorescent substance is a member of the group consisting of substances having the following formulas: Y3Al5O12:Ce; (Y,Gd,Tb)3(Al,Ga)5O12:Ce; CaGa2S4:Ce3+; SrGa2S4:Ce3+; YAlO3:Ce3+; YGaO3:Ce3+; Y(Al, Ga)O3:Ce3+; Y2SiO5:Ce3+; and A3B50O12:M, in which A is at least one element selected from the group consisting of Y, Gd, Tb, La, Lu, Se, and Sm, B is at least one element selected from the group consisting of Al, Ga, and In, and M is at least one element selected from the group consisting of Ce, Pr, Eu, Cr, Nd, and Er.
4. The resin composition of claim 1 wherein the content of the silica-based filler is 5 to 150 parts by weight for 100 parts by weight of the curable resin composition.
5. The resin composition of claim 1 , wherein the silica-based filler having the cristobalite structure has a particle size of 0.01 to 75 μm and a sphericity of 0.8 to 1.0.
6. The resin composition of claim 1 , wherein the curable resin composition is an addition-curable silicone rubber composition.
7. The resin composition of claim 1 , wherein the curable silicone rubber composition consists of
(A) an organopolysiloxane having two or more alkenyl groups in one molecule,
(B) an organohydrogenpolysiloxane in an amount sufficient to provide 0.7 to 3.0 of SiH groups in component (B) per alkenyl group in component (A),
(C) a platinum catalyst in an amount of 0.1 to 500 ppm in terms of platinum for 100 parts by weight of the total amount of components (A) and (B),
(D) a reaction inhibitor in an amount of 1 to 10,000 ppm for the total amount of the addition curable silicone rubber composition, and
(E) a silane coupling agent in an amount of no more than 10 wt % for the total amount of the addition curable silicone rubber composition.
8. The resin composition of claim 7 , wherein the organopolysiloxane of component (A) is represented by the following general formula (1):
R1R2R3SiO—(R4R5SiO)a—(R6R7SiO)b—SiR1R2R3 (1)
R1R2R3SiO—(R4R5SiO)a—(R6R7SiO)b—SiR1R2R3 (1)
wherein
R1 denotes a monovalent hydrocarbon group having noncovalent double bonds,
R2 to R7 denote identical or different monovalent hydrocarbon groups,
each of R4 to R7 denotes a monovalent hydrocarbon group having no aliphatic unsaturated bond, and R6 and/or R7 denotes an aromatic monovalent hydrocarbon group, and
a and b are integers defined by 10 ≦a+b ≦500; 10 <a≦500; and 0 ≦b ≦250,
the content of aromatic groups is 20 to 80 mol % of the total amount of monovalent hydrocarbon groups of R1 to R7.
10. An optical semiconductor device in which an optical semiconductor element is encapsulated with a cured product of the resin composition comprising a curable silicone rubber resin composition and a silica-based filler having a cristobalite structure, wherein a cured product of the curable silicone rubber composition has a refractive index of 1.4 to 1.6, and the silica-based filler has a refractive index of 1.45 to 1.55 and differs in refractive index within ±0.03 from the cured product of the curable silicone rubber resin composition and has a thermal conductivity of at least 0.5 W/m·K.
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Also Published As
Publication number | Publication date |
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US20110140289A1 (en) | 2011-06-16 |
TWI486400B (en) | 2015-06-01 |
JP2011144360A (en) | 2011-07-28 |
TW201137042A (en) | 2011-11-01 |
CN102153863A (en) | 2011-08-17 |
JP5549568B2 (en) | 2014-07-16 |
CN102153863B (en) | 2014-12-17 |
EP2336230A1 (en) | 2011-06-22 |
KR101607108B1 (en) | 2016-03-29 |
KR20110068867A (en) | 2011-06-22 |
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