KR101370078B1 - High luminous flux led lights having high temperature conductor - Google Patents

High luminous flux led lights having high temperature conductor Download PDF

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KR101370078B1
KR101370078B1 KR1020120129631A KR20120129631A KR101370078B1 KR 101370078 B1 KR101370078 B1 KR 101370078B1 KR 1020120129631 A KR1020120129631 A KR 1020120129631A KR 20120129631 A KR20120129631 A KR 20120129631A KR 101370078 B1 KR101370078 B1 KR 101370078B1
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led chip
encapsulant
light source
led
luminous flux
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Korean (ko)
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김형수
이동근
강인기
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희성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

The present invention relates to a high luminous flux LED light source including a high thermal conductor The LED light source of the present invention comprises: a base in which a lead frame is provided; an LED chip mounted on the lead frame of the base; an encapsulant which protects the LED chip by encapsulating the LED chip, transmits light generated from the LED chip, and releases the heat generated from the LED chip; and a thermal conductor which is included in the encapsulant to increase thermal conductivity of the encapsulant. An LED light source configured as above may deliver heat generated when high current is applied for high luminance rapidly to a heat radiation structure through a high thermal conductor since a high thermal conductor is included in an silicone-based encapsulant to increase thermal conductive characteristics, thereby enhancing a high luminous flux and reliability.

Description

열전도체를 포함하는 ＬＥＤ 광원체{HIGH LUMINOUS FLUX LED LIGHTS HAVING HIGH TEMPERATURE CONDUCTOR}LED light source body including a thermal conductor {HIGH LUMINOUS FLUX LED LIGHTS HAVING HIGH TEMPERATURE CONDUCTOR}

본 발명은 LED 칩을 광원으로 사용하는 LED 광원체에 관한 것으로, 보다 상세하게는 실리콘 수지로 된 봉지재에 고열전도체를 포함시켜 열전도 특성을 향상시킴으로써 고광속(High luminous flux)을 구현할 수 있는 LED 광원체에 관한 것이다.
The present invention relates to an LED light source using an LED chip as a light source, and more particularly, to include a high thermal conductor in an encapsulant made of a silicone resin, thereby improving heat conduction characteristics, thereby enabling high luminous flux. It relates to a light source body.

일반적으로, LED 패키지는 크게 LED 칩, 접착제, 봉지재, 형광체 및 방열 부속품 등으로 구성되어 있다. LED 칩은 빛이 발생되는 부분으로 p-n접합 구조를 갖고 있어 전류의 흐름에 따라 전자와 정공이 재결합되면서 빛을 발생하고, 접착제는 LED 패키지 내에서 각 물질들의 접합에 사용된다. 봉지재는 기본적으로 LED 칩을 보호하고 빛을 투과시켜 외부로 빛을 방출하는 기능을 한다. LED 봉지재로는 에폭시 계열의 수지와 실리콘 계열의 수지가 주를 이루고 있는데, 열에 의한 황변화 현상으로 최근의 고출력 LED 패키지에서는 에폭시보다 내열 황변성이 양호한 실리콘 수지를 많이 사용한다. LED 형광체는 염료, 반도체 등의 파장 변환물질 중 대표적인 것으로, 전자선, X-선, 자외선 등의 에너지를 흡수한 후 흡수한 에너지의 일부를 가시광선으로 방출하는 물질로서, LED 패키지로 백색조명을 구현하는데 중요한 역할을 담당한다. LED 패키지에서 방열은 LED 패키지의 수명과 관련되어 중요하므로 다양한 방열 제품들이 사용되고 있다.In general, the LED package is largely composed of LED chips, adhesives, encapsulants, phosphors and heat dissipation accessories. The LED chip has a p-n junction structure where light is generated. As the current flows, electrons and holes recombine to generate light, and an adhesive is used to bond each material in the LED package. The encapsulant basically protects the LED chip and transmits light to emit light to the outside. The LED encapsulation material is mainly composed of epoxy resin and silicone resin, and due to heat yellowing phenomenon, in recent high power LED packages, silicone resins having better heat yellowing resistance than epoxy are used. LED phosphors are representative of wavelength converting materials such as dyes and semiconductors. They absorb some energy such as electron beams, X-rays, and ultraviolet rays and emit some of the absorbed energy as visible light. Plays an important role. Heat dissipation in LED packages is important in relation to the life of the LED package, so various heat dissipation products are used.

도 1은 종래의 LED 광원체(10)의 구조를 개략적으로 나타낸 종단면도로서, 베이스(11)와 베이스(11)에 실장된 LED 칩(12)과 LED 칩(12)을 밀봉하는 봉지재(15)가 도시되어 있다. LED 칩(12)은 베이스(11)에 구비된 리드 프레임(13) 상에 실장되며, 리드 와이어(14)에 의하여 리드 프레임(13)과 전기적으로 연결된다.1 is a longitudinal cross-sectional view schematically showing the structure of a conventional LED light source body 10, an encapsulant for encapsulating the LED chip 12 and the LED chip 12 mounted on the base 11 and the base 11 ( 15 is shown. The LED chip 12 is mounted on the lead frame 13 provided in the base 11, and is electrically connected to the lead frame 13 by the lead wires 14.

도 1을 참조하면, 종래 LED 광원체(10)의 봉지재(15)는 형광체와 실리콘(silicone)으로 구성되는데, 에폭시보다 내열성이 강한 실리콘도 고전류가 인가될 경우에는 광속 및 신뢰성이 저하되는 문제점이 있다. 즉, 실리콘계 봉지재는 상대적으로 에폭시 계열보다 내열성이 우수한 장점이 있어, 조명용 및 백라이트용 LED 광원체에 실리콘계 봉지재가 주로 사용되고 있다.Referring to Figure 1, the encapsulant 15 of the conventional LED light source body 10 is composed of a phosphor and silicon (silicone), the heat resistance than the epoxy is also a problem that the luminous flux and reliability is deteriorated when a high current is applied There is this. That is, the silicon-based encapsulant has a relatively better heat resistance than the epoxy-based, the silicon-based encapsulant is mainly used in the LED light source for lighting and backlight.

그러나, 최근에는 고휘도의 LED 칩이 개발되고, 이를 위한 고전류가 인가되어 LED 칩에서 발생되는 열이 증가함으로써, 이러한 실리콘계 봉지재도 고열에 따른 광 투과성이 떨어져 광속이 저하되는 문제점이 나타나고 있다.
[선행문헌1] 한국공개특허 10-2012-0075129호(2012.07.06.공개)
[선해문헌2] 한국공개특허 10-2011-0087245호(2011.08.02.공개)
However, in recent years, a high brightness LED chip has been developed, and a high current is applied thereto to increase the heat generated from the LED chip. Thus, the silicon-based encapsulant also has a problem in that the light flux decreases due to the high heat.
[Previous Document 1] Korean Patent Publication No. 10-2012-0075129 (2012.07.06.published)
[Article 2] Korean Patent Publication No. 10-2011-0087245 (published Aug. 2, 2011)

본 발명은 상기와 같은 문제점을 해결하기 위하여 제안된 것으로, 본 발명의 목적은 LED의 실리콘 봉지재에 고열전도체 물질을 부가하여 열을 신속히 방출하도록 함으로써, LED 칩에 고전류가 인가되더라도 광속 및 신뢰성이 우수한 LED 광원체를 제공하는 것이다.
The present invention has been proposed to solve the above problems, and an object of the present invention is to add a high thermal conductor material to the silicon encapsulant of the LED so as to quickly release heat, so that even if a high current is applied to the LED chip, the luminous flux and reliability are It is to provide an excellent LED light source body.

상기와 같은 목적을 달성하기 위한 본 발명의 고광속 LED 광원체는, 리드 프레임이 구비되는 베이스; 상기 베이스의 리드 프레임 상에 실장되는 LED 칩; 상기 LED 칩을 밀봉하여 상기 LED칩을 보호하고, 상기 LED칩에서 발생된 빛을 투과시키며, 상기 LED 칩에서 발생되는 열을 방출하는 봉지재; 및 상기 봉지재에 포함되어 상기 봉지재의 열 전도도를 증가시키는 열전도체;를 포함하는 것을 특징으로 한다.The high luminous flux LED light source body of the present invention for achieving the above object, the base is provided with a lead frame; An LED chip mounted on a lead frame of the base; An encapsulant that seals the LED chip to protect the LED chip, transmits light generated from the LED chip, and emits heat generated from the LED chip; And a heat conductor included in the encapsulant to increase thermal conductivity of the encapsulant.

여기서, 상기 열전도체는, 상기 봉지재의 전체 중량 대비 0.01 중량% 내지 10 중량%로 구성되는 것을 특징으로 한다.Here, the thermal conductor is characterized in that consisting of 0.01% by weight to 10% by weight relative to the total weight of the encapsulant.

또한, 상기 열전도체는 인산염(Phosphate)계 산화물(Ba2P2O7, Al4(P2O7)3, Sr2P2O7, Ca2P2O7, Mg2P2O7, Sn2P2O7, Zn2P2O7), 질화물(Nitride)계(BN, AIN, TN, Si3N4) 화합물, 산화물(Oxide)계(AL2O3, MgO, BeO, ZnO) 화합물 및 탄화물(Carbide)계(SiC) 화합물 중 어느 하나를 포함할 수 있다.
In addition, the thermal conductor is a phosphate-based oxide (Ba 2 P 2 O 7 , Al 4 (P 2 O 7 ) 3 , Sr 2 P 2 O 7 , Ca 2 P 2 O 7 , Mg 2 P 2 O 7 , Sn 2 P 2 O 7 , Zn 2 P 2 O 7 ), nitride-based (BN, AIN, TN, Si 3 N 4 ) compound, oxide-based (AL 2 O 3 , MgO, BeO, ZnO) and a carbide-based (SiC) compound may include any one.

본 발명에 따른 LED 광원체는 실리콘계 봉지재에 고열전도체를 포함시켜 열전도 특성을 향상시킴으로써 고휘도를 위해 고전류가 인가될 경우 발생되는 열을 고열전도체에 의해 신속하게 방열 구조물로 전달함으로써 고광속 및 신뢰성을 향상시킬 수 있는 효과가 있다.
The LED light source body according to the present invention includes a high thermal conductor in the silicon encapsulant to improve thermal conductivity, thereby transferring heat generated when a high current is applied for high brightness to the heat dissipation structure by the high thermal conductor, thereby improving high luminous flux and reliability. There is an effect that can be improved.

도 1은 종래의 LED 광원체 구조를 개략적으로 나타낸 종단면도,
도 2는 본 발명에 따른 LED 광원체의 구조를 개략적으로 나타낸 종단면도, 및
도 3은 LED 광원체에 인가되는 전류와 광속의 관계를 도시한 그래프이다.1 is a longitudinal sectional view schematically showing a structure of a conventional LED light source body;
2 is a longitudinal sectional view schematically showing the structure of an LED light source body according to the present invention, and
3 is a graph showing the relationship between the current and the light flux applied to the LED light source body.

본 발명과 본 발명의 실시에 의해 달성되는 기술적 과제는 다음에서 설명하는 본 발명의 바람직한 실시예들에 의하여 보다 명확해질 것이다. 다음의 실시예들은 단지 본 발명을 설명하기 위하여 예시된 것에 불과하며, 본 발명의 범위를 제한하기 위한 것은 아니다.
The technical problems achieved by the present invention and the practice of the present invention will be more clearly understood by the preferred embodiments of the present invention described below. The following examples are merely illustrated to illustrate the present invention and are not intended to limit the scope of the present invention.

도 2는 본 발명에 따른 LED 광원체의 구조를 개략적으로 나타낸 종단면도이다.2 is a longitudinal sectional view schematically showing the structure of the LED light source body according to the present invention.

본 발명에 따른 LED 광원체(100)는 도 2에 도시된 바와 같이, LED 칩(120)을 실장하기 위한 수용홈이 형성되고, LED 칩(120)에 전원을 공급하기 위한 한 쌍의 리드 프레임(130)이 구비되며, LED 칩(120)에서 발생되는 열을 외부로 소산시키기 위한 베이스(110)와, 수용홈 내부에서 일 측의 리드 프레임 상에 실장되며, 리드 와이어(140)를 통하여 한 쌍의 리드 프레임에 전기적으로 연결되어, 리드 프레임 임(130) 리드 와이어(140)를 통하여 전류가 공급되면 빛을 발생하는 LED 칩(120)과, 수용홈에 몰딩되어 LED 칩(120)을 보호하고, LED 칩(120)으로부터의 빛을 외부로 방출하는 봉지재(Encapsulant, 150)로 구성된다.As shown in FIG. 2, the LED light source body 100 according to the present invention has a receiving groove for mounting the LED chip 120, and a pair of lead frames for supplying power to the LED chip 120. 130 is provided, the base 110 for dissipating heat generated from the LED chip 120 to the outside, and is mounted on the lead frame on one side inside the receiving groove, through the lead wire 140 It is electrically connected to the pair of lead frames, the LED chip 120 to generate light when the current is supplied through the lead wire frame lead wire 140, and molded in the receiving groove to protect the LED chip 120 And, it is composed of an encapsulant (150) for emitting light from the LED chip 120 to the outside.

여기서, 베이스(110)에는 LED 광원체의 몸체를 구성하며, 수용홈과 리드 프레임이 구비되어 있으며 열을 외부로 소산시키는 역할을 한다. 또한, LED 칩(120)은 베이스(110)의 수용홈 내부에 실장되고 칩의 내부 전극이 리드 와이어(140)를 통하여 리드 프레임(130)에 각각 연결되어 전류가 흐르면 빛을 발생한다. 봉지재(150)는 에폭시 계열의 수지나 실리콘 계열의 수지, 에너지를 흡수한 후 흡수한 에너지의 일부를 파장 변환시키는 형광체 및 열 전도도를 증가시키는 고열전도체로 구성된다. 이러한 봉지재(150)는 LED 칩(120)이 실장된 수용홈을 밀봉하여 LED칩(120)을 보호하고, LED 칩(120)에서 발생되는 열을 직접 외부로 방출하거나 베이스(110)로 전달하며, LED 칩(120)에서 발생된 빛을 외부로 투과시키는 기능을 한다.Here, the base 110 constitutes the body of the LED light source body, is provided with a receiving groove and a lead frame and serves to dissipate heat to the outside. In addition, the LED chip 120 is mounted in the receiving groove of the base 110 and the internal electrode of the chip is connected to the lead frame 130 through the lead wire 140 to generate light when current flows. The encapsulant 150 is composed of an epoxy-based resin or a silicone-based resin, a phosphor for converting a portion of the absorbed energy after absorbing energy, and a high thermal conductor for increasing thermal conductivity. The encapsulant 150 seals the receiving groove in which the LED chip 120 is mounted to protect the LED chip 120, and directly discharges heat generated from the LED chip 120 to the outside or transfers it to the base 110. And transmits the light generated by the LED chip 120 to the outside.

즉, 본 발명에 따른 봉지재(150)는 실리콘 수지(151)에 형광체(152)와 고열전도체(153)가 포함되어 이루어지며, 고열전도체는 인산염(Phosphate)계 산화물, 질화물(Nitride)계 화합물, 산화물(Oxide)계 산화물, 및 탄화물(Carbide)계 화합물 중 어느 하나 이상의 재료로 이루어진다. 예를 들어, 인산염(Phosphate)계 산화물로는 Ba2P2O7, Al4(P2O7)3, Sr2P2O7, Ca2P2O7, Mg2P2O7, Sn2P2O7, Zn2P2O7 등이 사용될 수 있다. 또한, 질화물(Nitride)계 화합물로는 BN(Boron Nitride), AlN(Aluminum Nitride), TN(Titanium Nitride), Si3N4(Silicon Nitride) 등이 사용될 수 있고, 산화물(Oxide)계 화합물로는 AL2O3, MgO, BeO, ZnO 등이 사용될 수 있으며, 탄화물(Carbide)계로는 SiC 등이 사용될 수 있다.That is, the encapsulant 150 according to the present invention includes a phosphor 152 and a high thermal conductor 153 in the silicone resin 151, and the high thermal conductor is a phosphate oxide or a nitride compound. It is made of one or more materials of oxide, oxide, and carbide compound. For example, as a phosphate oxide, Ba 2 P 2 O 7 , Al 4 (P 2 O 7 ) 3 , Sr 2 P 2 O 7 , Ca 2 P 2 O 7 , Mg 2 P 2 O 7 , Sn 2 P 2 O 7 , Zn 2 P 2 O 7 Etc. may be used. In addition, nitride (Nitride) -based compound may be used such as BN (Boron Nitride), AlN (Aluminum Nitride), TN (Titanium Nitride), Si 3 N 4 (Silicon Nitride), and the like (Oxide) compound AL 2 O 3 , MgO, BeO, ZnO, etc. may be used, and SiC may be used as a carbide-based.

그리고 본 발명에 따른 LED 봉지재(150)는 90 중량% 내지 99.99 중량%의 실리콘과, 0.01 중량% 내지 10 중량%의 고열전도체로 이루어질 수 있다. 즉, 고열전도체는 전체 봉지재 중량에 0.01 중량% 내지 10 중량%가 포함되고, 형광체는 실리콘 무게 대비 미미하므로 해당 중량%는 생략한다. 이와 같이 고열전도체의 중량%를 한정한 이유는, 봉지재(150)에 고열전도체가 0.01% 보다 적게 포함되는 경우 열전도의 효율이 잘 나타나지 않을 수 있으며, 10중량% 이상 포함되었을 경우 오히려 빛의 방출을 차단하게 되므로, 상기 범위를 벗어나는 경우 고전류가 인가되어도 이에 비례하여 우수한 광속을 나타내지 못하는 문제점이 발생하기 때문이다.The LED encapsulant 150 according to the present invention may be made of 90 wt% to 99.99 wt% of silicon and 0.01 wt% to 10 wt% of a high thermal conductor. That is, the high thermal conductor includes 0.01 wt% to 10 wt% in the total weight of the encapsulant, and the corresponding wt% is omitted since the phosphor is insignificant compared to the silicon weight. As such, the reason for limiting the weight percent of the high thermal conductor is that when the encapsulant 150 contains less than 0.01% of the high thermal conductor, the efficiency of the heat conduction may not be well represented. This is because when the outside of the above range, even if a high current is applied, there is a problem that does not exhibit an excellent luminous flux in proportion to this.

도 3은 LED 광원체에 인가되는 전류와 광속의 관계를 도시한 그래프로서, "A"는 고열전도체를 사용하지 않는 종래의 봉지재를 채택한 LED 광원체의 특성 그래프이고, "B"는 본 발명에 따라 고열전도체를 사용하는 봉지재를 채택한 LED 광원체의 특성 그래프이다.3 is a graph showing the relationship between the current and the light flux applied to the LED light source body, "A" is a characteristic graph of the LED light source body adopting a conventional encapsulant which does not use a high thermal conductor, "B" is a present invention This is a characteristic graph of LED light source body adopting encapsulant using high thermal conductor.

도 3을 참조하면, 횡축은 LED 광원체에 흐르는 전류의 크기(단위 ㎃)를 나타내고, 종축은 해당 LED 광원체에서 발생되는 광속(Luminous flux; 단위 lm)을 나타낸다. Referring to FIG. 3, the horizontal axis represents the magnitude of the current flowing in the LED light source (unit ㎃), and the vertical axis represents the Luminous flux (unit lm) generated in the LED light source.

도시된 그래프를 비교해 보면, 고열전도체를 사용하지 않은 종래의 LED 광원체는 전류가 60mA에서 240㎃로 증가할 때 광속(Luminous flux)은 대략 24 루멘(lm)에서 78루멘(lm)으로 증가하고, 본 발명에 따른 고열전도체를 포함하는 고광속 LED 광원체는 전류가 60mA에서 240㎃로 증가할 때 광속(Luminous flux)은 대략 25 루멘(lm)에서 82루멘(lm)으로 증가하는 것을 알 수 있다. 그리고 본 발명에 따른 LED 광원체(100)와 종래의 LED 광원체(10)를 대비할 경우에, 본 발명의 LED 광원체(100)는 전류가 60㎃일 때 종래보다 대략 3.5% 정도 광속이 증가하고, 240㎃일 때 종래보다 대략 4.9% 광속이 증가한 것으로 나타난다. 따라서 본 발명에 따른 LED 광원체(100)는 특정 크기의 전류가 인가되는 경우 종래의 LED 광원체(10)에 비하여 우수한 광속을 나타내고, 전류가 증가할수록 광속(Luminous flux)의 차이가 더욱 현저하게 향상되는 것을 알 수 있다.
Comparing the graphs shown, the conventional LED light source without the high thermal conductor shows that the luminous flux increases from approximately 24 lumens (lm) to 78 lumens (lm) when the current is increased from 240 mA to 60 mA. In the high luminous flux LED light source body including the high thermal conductor according to the present invention, when the current is increased from 240 mA to 60 mA, the luminous flux increases from approximately 25 lumens (lm) to 82 lumens (lm). have. And when comparing the LED light source body 100 and the conventional LED light source body 10 according to the present invention, the LED light source body 100 of the present invention increases the luminous flux by about 3.5% than conventional when the current is 60 mA In the case of 240 kHz, the luminous flux is increased by about 4.9%. Therefore, the LED light source body 100 according to the present invention shows an excellent luminous flux compared to the conventional LED light source body 10 when a current of a specific size is applied, and the difference in the luminous flux becomes more remarkable as the current increases. It can be seen that the improvement.

이상에서 본 발명에 있어서 실시예를 참고로 설명되었으나, 본 기술분야의 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments.

100 : LED 광원체 110 : 베이스
120 : LED 칩 130 : 리드 프레임
140 : 리드 와이어 150 : 봉지재
151 : 실리콘 수지 152 : 형광체
153 : 열전도체100: LED light source 110: base
120: LED chip 130: lead frame
140: lead wire 150: sealing material
151: silicone resin 152: phosphor
153: thermal conductor

Claims (3)

리드 프레임이 구비되는 베이스;
상기 베이스의 리드 프레임 상에 실장되는 LED 칩;
상기 LED 칩을 밀봉하여 상기 LED칩을 보호하고, 상기 LED칩에서 발생된 빛을 투과시키며, 상기 LED 칩에서 발생되는 열을 방출하는 봉지재; 및
상기 봉지재의 열 전도도를 증가시키기 위하여, 인산염(Phosphate)계 산화물(Ba2P2O7, Al4(P2O7)3, Sr2P2O7, Ca2P2O7, Mg2P2O7, Sn2P2O7, Zn2P2O7), 질화물(Nitride)계(BN, AIN, TN, Si3N4) 화합물 및 산화물(Oxide)계(AL2O3, MgO, BeO, ZnO) 화합물 중 어느 하나를 포함하여, 상기 봉지재의 전체 중량 대비 0.01 중량% 내지 10 중량%로 상기 봉지재에 혼합되는 열전도체;를 포함하는 것을 특징으로 하는 LED 광원체.A base having a lead frame;
An LED chip mounted on a lead frame of the base;
An encapsulant that seals the LED chip to protect the LED chip, transmits light generated from the LED chip, and emits heat generated from the LED chip; And
In order to increase the thermal conductivity of the encapsulant, a phosphate-based oxide (Ba 2 P 2 O 7 , Al 4 (P 2 O 7 ) 3 , Sr 2 P 2 O 7 , Ca 2 P 2 O 7 , Mg 2 P 2 O 7 , Sn 2 P 2 O 7 , Zn 2 P 2 O 7 ), nitride-based (BN, AIN, TN, Si 3 N 4 ) compound and oxide-based (AL 2 O 3 , MgO, BeO, ZnO) including any one of the compounds, 0.01 to 10% by weight relative to the total weight of the encapsulant thermal conductor mixed in the encapsulant; LED light source comprising a. 삭제delete 삭제delete
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3102445U (en) * 2003-12-24 2004-07-08 實慶 孫 Light emitting diode device
JP2008304611A (en) 2007-06-06 2008-12-18 Fujikura Ltd Optical transmitter/receiver
KR20110068867A (en) * 2009-12-15 2011-06-22 신에쓰 가가꾸 고교 가부시끼가이샤 Resin composition for encapsulating optical semiconductor element and optical semiconductor device
KR20110095279A (en) * 2008-10-31 2011-08-24 덴끼 가가꾸 고교 가부시키가이샤 Substrate for light emitting element package, and light emitting element package

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3102445U (en) * 2003-12-24 2004-07-08 實慶 孫 Light emitting diode device
JP2008304611A (en) 2007-06-06 2008-12-18 Fujikura Ltd Optical transmitter/receiver
KR20110095279A (en) * 2008-10-31 2011-08-24 덴끼 가가꾸 고교 가부시키가이샤 Substrate for light emitting element package, and light emitting element package
KR20110068867A (en) * 2009-12-15 2011-06-22 신에쓰 가가꾸 고교 가부시끼가이샤 Resin composition for encapsulating optical semiconductor element and optical semiconductor device

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