JP5529613B2 - 光電変換装置及び撮像システム - Google Patents

光電変換装置及び撮像システム Download PDF

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Publication number
JP5529613B2
JP5529613B2 JP2010081641A JP2010081641A JP5529613B2 JP 5529613 B2 JP5529613 B2 JP 5529613B2 JP 2010081641 A JP2010081641 A JP 2010081641A JP 2010081641 A JP2010081641 A JP 2010081641A JP 5529613 B2 JP5529613 B2 JP 5529613B2
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Prior art keywords
photoelectric conversion
unit
electrode
signal
conversion device
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Japanese (ja)
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JP2010268440A5 (enExample
JP2010268440A (ja
Inventor
達也 領木
誠一郎 酒井
徹 小泉
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2010081641A priority Critical patent/JP5529613B2/ja
Priority to US12/758,086 priority patent/US8872092B2/en
Publication of JP2010268440A publication Critical patent/JP2010268440A/ja
Priority to US13/829,678 priority patent/US8957364B2/en
Publication of JP2010268440A5 publication Critical patent/JP2010268440A5/ja
Application granted granted Critical
Publication of JP5529613B2 publication Critical patent/JP5529613B2/ja
Priority to US14/496,313 priority patent/US9253425B2/en
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2010081641A 2009-04-17 2010-03-31 光電変換装置及び撮像システム Active JP5529613B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010081641A JP5529613B2 (ja) 2009-04-17 2010-03-31 光電変換装置及び撮像システム
US12/758,086 US8872092B2 (en) 2009-04-17 2010-04-12 Photo-electric conversion device with current fluctuation suppression
US13/829,678 US8957364B2 (en) 2009-04-17 2013-03-14 Photo-electric conversion device with current fluctuation suppression
US14/496,313 US9253425B2 (en) 2009-04-17 2014-09-25 Photo-electric conversion device for current fluctuation suppression

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009101382 2009-04-17
JP2009101382 2009-04-17
JP2010081641A JP5529613B2 (ja) 2009-04-17 2010-03-31 光電変換装置及び撮像システム

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JP2010268440A JP2010268440A (ja) 2010-11-25
JP2010268440A5 JP2010268440A5 (enExample) 2013-05-16
JP5529613B2 true JP5529613B2 (ja) 2014-06-25

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JP (1) JP5529613B2 (enExample)

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JP5529613B2 (ja) * 2009-04-17 2014-06-25 キヤノン株式会社 光電変換装置及び撮像システム
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JP5679653B2 (ja) * 2009-12-09 2015-03-04 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP5780711B2 (ja) 2010-04-06 2015-09-16 キヤノン株式会社 固体撮像装置
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JP6856983B2 (ja) 2016-06-30 2021-04-14 キヤノン株式会社 光電変換装置及びカメラ
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JP6740067B2 (ja) 2016-09-16 2020-08-12 キヤノン株式会社 固体撮像装置及びその駆動方法
JP6750876B2 (ja) 2016-10-07 2020-09-02 キヤノン株式会社 固体撮像装置及びその駆動方法
US10431464B2 (en) * 2016-10-17 2019-10-01 International Business Machines Corporation Liner planarization-free process flow for fabricating metallic interconnect structures
JP6806553B2 (ja) 2016-12-15 2021-01-06 キヤノン株式会社 撮像装置、撮像装置の駆動方法及び撮像システム
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JP7102161B2 (ja) 2018-02-15 2022-07-19 キヤノン株式会社 撮像装置、撮像システム、及び、移動体
JP7210224B2 (ja) * 2018-10-22 2023-01-23 キヤノン株式会社 表示素子、表示装置、撮像装置
JP7240151B2 (ja) * 2018-11-22 2023-03-15 株式会社ジャパンディスプレイ 検出装置及び表示装置
CN113571538A (zh) * 2021-06-24 2021-10-29 维沃移动通信有限公司 像素结构、图像传感器、控制方法及装置、电子设备
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Also Published As

Publication number Publication date
US9253425B2 (en) 2016-02-02
US8957364B2 (en) 2015-02-17
US20130201372A1 (en) 2013-08-08
US8872092B2 (en) 2014-10-28
US20100264298A1 (en) 2010-10-21
US20150009389A1 (en) 2015-01-08
JP2010268440A (ja) 2010-11-25

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