JP6254048B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6254048B2 JP6254048B2 JP2014116381A JP2014116381A JP6254048B2 JP 6254048 B2 JP6254048 B2 JP 6254048B2 JP 2014116381 A JP2014116381 A JP 2014116381A JP 2014116381 A JP2014116381 A JP 2014116381A JP 6254048 B2 JP6254048 B2 JP 6254048B2
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
以下に、図1〜図4を用いて本実施の形態の半導体装置を説明する。本実施の形態の半導体装置は、固体撮像素子に係るものであり、特に、一つの画素内に複数のフォトダイオードを有する固体撮像素子に係る。
本実施の形態では、画素内に並ぶ2個のフォトダイオードの間に、転送トランジスタのゲート電極を形成する構成について、図5および図6を用いて説明する。図5は、本実施の形態の半導体装置を示す平面レイアウトである。図6は、図5のB−B線における断面図である。図5には、画素PEを構成する構造のうち、受光部およびそれに隣接する2個の転送トランジスタのみを示している。
AR 活性領域
CP コンタクトプラグ
EI 素子分離領域
FD 浮遊拡散容量部
GE、GE1、GE2 ゲート電極
N1、N2 N−型半導体領域
PD1、PD2 フォトダイオード
PE 画素
RST リセットトランジスタ
SC 基板コンタクト部
SEL 選択トランジスタ
TX1〜TX4 転送トランジスタ
WL ウェル領域
Claims (7)
- 入射光の光量に応じた電荷を生成する、第1受光素子および第2受光素子と、
前記第1受光素子内の電荷を浮遊拡散容量部に転送する第1転送トランジスタと、
前記第1受光素子内および前記第2受光素子内のそれぞれの電荷を合成して前記浮遊拡散容量部に転送する第2転送トランジスタと、
を有する画素が設けられた固体撮像素子を含み、
前記第1転送トランジスタは、前記第1受光素子をソースとして有し、前記浮遊拡散容量部をドレインとして有し、
前記第2転送トランジスタは、前記第1受光素子と前記第2受光素子とをソースとして有し、前記浮遊拡散容量部をドレインとして有する、半導体装置。 - 請求項1記載の半導体装置において、
前記固体撮像素子を用いた撮像動作では、前記第1受光素子内の電荷と、前記第2受光素子内の電荷とを合成し、一つの画素情報として取得する、半導体装置。 - 請求項2記載の半導体装置において、
前記撮像動作では、前記第2転送トランジスタを動作させることで、前記第1受光素子内の電荷と、前記第2受光素子内の電荷とを合成して読み出す、半導体装置。 - 請求項1記載の半導体装置において、
前記画素は、
前記浮遊拡散容量部の電位変動に対応する電気信号を出力する増幅トランジスタと、
前記浮遊拡散容量部の電位を所定の値にリセットするリセットトランジスタと、
前記増幅トランジスタが出力する前記電気信号を外部に出力する選択トランジスタと、
を有し、
前記リセットトランジスタと前記第2転送トランジスタとを動作させることで、前記第1受光素子内および前記第2受光素子内のそれぞれの電荷を初期化する、半導体装置。 - 請求項1記載の半導体装置において、
前記第1転送トランジスタを構成する第1ゲート電極は、前記第1受光素子に隣接して形成され、
前記第2転送トランジスタを構成する第2ゲート電極は、前記第1受光素子および前記第2受光素子に隣接して形成されている、半導体装置。 - 請求項1記載の半導体装置において、
前記第2転送トランジスタを構成する第2ゲート電極の一部は、平面視において、前記第1受光素子と前記第2受光素子との間に配置されている、半導体装置。 - 請求項6記載の半導体装置において、
前記第1受光素子および前記第2受光素子は第1方向に並んで配置され、
前記第1受光素子と前記第2受光素子との間の前記第2ゲート電極は、前記第1方向に対して直交する第2方向に延在している、半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014116381A JP6254048B2 (ja) | 2014-06-05 | 2014-06-05 | 半導体装置 |
US14/716,125 US9437642B2 (en) | 2014-06-05 | 2015-05-19 | Semiconductor device including a solid state imaging device |
CN201510305649.9A CN105321969B (zh) | 2014-06-05 | 2015-06-05 | 半导体装置 |
US15/232,334 US10062723B2 (en) | 2014-06-05 | 2016-08-09 | Semiconductor device including a solid state imaging device |
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---|---|---|---|
JP2014116381A JP6254048B2 (ja) | 2014-06-05 | 2014-06-05 | 半導体装置 |
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JP2017229404A Division JP6420450B2 (ja) | 2017-11-29 | 2017-11-29 | 半導体装置 |
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JP2015230963A JP2015230963A (ja) | 2015-12-21 |
JP6254048B2 true JP6254048B2 (ja) | 2017-12-27 |
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US (2) | US9437642B2 (ja) |
JP (1) | JP6254048B2 (ja) |
CN (1) | CN105321969B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6406977B2 (ja) * | 2014-11-04 | 2018-10-17 | キヤノン株式会社 | 光電変換装置、撮像システム |
US10163948B2 (en) * | 2015-07-23 | 2018-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
JP2017054966A (ja) * | 2015-09-10 | 2017-03-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
US10043905B2 (en) * | 2015-09-11 | 2018-08-07 | Toshiba Memory Corporation | Semiconductor device |
JP2017204528A (ja) * | 2016-05-10 | 2017-11-16 | セイコーエプソン株式会社 | 固体撮像装置 |
US10204943B2 (en) | 2016-08-10 | 2019-02-12 | Canon Kabushiki Kaisha | Image sensor, method of manufacturing the same, and camera with pixel including light waveguide and insulation film |
KR20210000600A (ko) * | 2019-06-25 | 2021-01-05 | 에스케이하이닉스 주식회사 | 이미지 센서 |
Family Cites Families (17)
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JP2004319837A (ja) * | 2003-04-17 | 2004-11-11 | Canon Inc | 固体撮像装置 |
KR100523672B1 (ko) * | 2003-04-30 | 2005-10-24 | 매그나칩 반도체 유한회사 | 다중 플로팅디퓨젼영역을 구비하는 씨모스 이미지센서 |
JP4280822B2 (ja) * | 2004-02-18 | 2009-06-17 | 国立大学法人静岡大学 | 光飛行時間型距離センサ |
KR100598015B1 (ko) * | 2005-02-07 | 2006-07-06 | 삼성전자주식회사 | 공유 구조 상보성 금속 산화막 반도체 액티브 픽셀 센서어레이의 레이 아웃 |
JP5076528B2 (ja) * | 2007-02-06 | 2012-11-21 | 株式会社ニコン | 光電変換部の連結/分離構造、固体撮像素子及び撮像装置 |
US8159585B2 (en) * | 2007-05-01 | 2012-04-17 | Omnivision Technologies, Inc. | Image sensor pixel with gain control |
US7888763B2 (en) * | 2008-02-08 | 2011-02-15 | Omnivision Technologies, Inc. | Backside illuminated imaging sensor with improved infrared sensitivity |
JP5526342B2 (ja) * | 2009-02-04 | 2014-06-18 | 株式会社 Rosnes | 固体撮像装置 |
FR2953642B1 (fr) * | 2009-12-09 | 2012-07-13 | E2V Semiconductors | Capteur d'image multilineaire a integration de charges. |
KR20110066330A (ko) * | 2009-12-11 | 2011-06-17 | 주식회사 동부하이텍 | 4t 이미지 센서 |
JP5513326B2 (ja) * | 2010-09-07 | 2014-06-04 | キヤノン株式会社 | 撮像素子及び撮像装置 |
JP2012084608A (ja) * | 2010-10-07 | 2012-04-26 | Sony Corp | 固体撮像装置とその製造方法、並びに電子機器 |
US8471315B1 (en) * | 2011-01-31 | 2013-06-25 | Aptina Imaging Corporation | CMOS image sensor having global shutter pixels built using a buried channel transfer gate with a surface channel dark current drain |
KR101241471B1 (ko) * | 2011-04-11 | 2013-03-11 | 엘지이노텍 주식회사 | 픽셀, 픽셀 어레이, 픽셀 어레이를 포함하는 이미지센서 및 이미지센서의 구동방법 |
KR101241704B1 (ko) * | 2011-04-14 | 2013-03-19 | 엘지이노텍 주식회사 | 픽셀, 픽셀 어레이, 이를 포함하는 이미지센서 및 그 구동방법 |
JP6039165B2 (ja) | 2011-08-11 | 2016-12-07 | キヤノン株式会社 | 撮像素子及び撮像装置 |
JP5755111B2 (ja) | 2011-11-14 | 2015-07-29 | キヤノン株式会社 | 撮像装置の駆動方法 |
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2014
- 2014-06-05 JP JP2014116381A patent/JP6254048B2/ja active Active
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2015
- 2015-05-19 US US14/716,125 patent/US9437642B2/en active Active
- 2015-06-05 CN CN201510305649.9A patent/CN105321969B/zh active Active
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JP2015230963A (ja) | 2015-12-21 |
CN105321969A (zh) | 2016-02-10 |
US20150357365A1 (en) | 2015-12-10 |
CN105321969B (zh) | 2019-10-08 |
US10062723B2 (en) | 2018-08-28 |
US20160351614A1 (en) | 2016-12-01 |
US9437642B2 (en) | 2016-09-06 |
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