JPS5775074A - Solid image pickup element - Google Patents

Solid image pickup element

Info

Publication number
JPS5775074A
JPS5775074A JP56138567A JP13856781A JPS5775074A JP S5775074 A JPS5775074 A JP S5775074A JP 56138567 A JP56138567 A JP 56138567A JP 13856781 A JP13856781 A JP 13856781A JP S5775074 A JPS5775074 A JP S5775074A
Authority
JP
Japan
Prior art keywords
photodiode
signal line
image pickup
vertical signal
pickup element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56138567A
Other languages
Japanese (ja)
Inventor
Shinya Oba
Masaaki Nakai
Ryuichi Izawa
Haruhisa Ando
Kayao Takemoto
Masakazu Aoki
Shoji Hanamura
Seiji Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56138567A priority Critical patent/JPS5775074A/en
Publication of JPS5775074A publication Critical patent/JPS5775074A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Abstract

PURPOSE:To reduce the smear noise to obtain a high-quality picture, by eliminating the overlap part of patterns between a photodiode and a signal line. CONSTITUTION:A gate part 6 of a vertical switching transistor is folded to eliminate the direct overlap part between a photodiode 10 and a vertical signal line 151. Since a gate line 14 formed with poly Si or the like is interposed between the photodiode 10 and the vertical signal line 151, the gate part 6 has less direct junction capacity. The coupling capacity between the photodiode 10 and the vertical signal line 151 is very small because of only a fringe capacity due to field leakage.
JP56138567A 1981-09-04 1981-09-04 Solid image pickup element Pending JPS5775074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56138567A JPS5775074A (en) 1981-09-04 1981-09-04 Solid image pickup element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56138567A JPS5775074A (en) 1981-09-04 1981-09-04 Solid image pickup element

Publications (1)

Publication Number Publication Date
JPS5775074A true JPS5775074A (en) 1982-05-11

Family

ID=15225149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56138567A Pending JPS5775074A (en) 1981-09-04 1981-09-04 Solid image pickup element

Country Status (1)

Country Link
JP (1) JPS5775074A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010268440A (en) * 2009-04-17 2010-11-25 Canon Inc Photoelectric conversion device and image capturing system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010268440A (en) * 2009-04-17 2010-11-25 Canon Inc Photoelectric conversion device and image capturing system
US8872092B2 (en) 2009-04-17 2014-10-28 Canon Kabushiki Kaisha Photo-electric conversion device with current fluctuation suppression
US8957364B2 (en) 2009-04-17 2015-02-17 Canon Kabushiki Kaisha Photo-electric conversion device with current fluctuation suppression
US9253425B2 (en) 2009-04-17 2016-02-02 Canon Kabushiki Kaisha Photo-electric conversion device for current fluctuation suppression

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