JP5512992B2 - ヒートシンク一体化パッケージ及びその製造方法 - Google Patents
ヒートシンク一体化パッケージ及びその製造方法 Download PDFInfo
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- JP5512992B2 JP5512992B2 JP2009077954A JP2009077954A JP5512992B2 JP 5512992 B2 JP5512992 B2 JP 5512992B2 JP 2009077954 A JP2009077954 A JP 2009077954A JP 2009077954 A JP2009077954 A JP 2009077954A JP 5512992 B2 JP5512992 B2 JP 5512992B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
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- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 239000010408 film Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 230000001681 protective effect Effects 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 239000011889 copper foil Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 238000005323 electroforming Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
Claims (6)
- ヒートシンク基板上に、電子部品を装着したヒートシンク一体化パッケージにおいて、
前記ヒートシンク基板は、ヒートシンク本体と該ヒートシンク本体に貼り合わせた少なくとも1枚の金属板を積層した構造となっており、その金属板を前後左右の4辺の内の少なくとも1辺に延長させて、前記電子部品から発生した熱をそこから外部に逃がす熱コネクタを形成し、
前記ヒートシンク基板上に絶縁基材からなる薄膜フィルムを介して配線を形成し、かつ該ヒートシンク基板の電子部品装着面に電子部品を装着して、該電子部品の電極端子と前記配線の必要個所とを電気接続し、
前記ヒートシンク基板上の配線には、水平配線部とポスト電極を有する配線付ポスト電極部品を装着して、前記電子部品と前記ポスト電極とを封止する封止樹脂を設け、
前記電子部品装着面とは反対の前記電子部品の裏面側において、前記封止樹脂の上で前記水平配線部に接続される外部電極を形成した、
ことから成るヒートシンク一体化パッケージ。 - 前記ヒートシンク一体化パッケージを装着したプリント基板を、筐体内部に取付けると共に、前記熱コネクタを筐体に接続固定した請求項1に記載のヒートシンク一体化パッケージ。
- 前記筐体は、少なくとも1枚の金属板を積層した構造となっており、その金属板を延伸させて、その延伸部を所定の形状に折り曲げることにより前記プリント基板の取付部を構成している請求項2に記載のヒートシンク一体化パッケージ。
- ヒートシンク基板上に、電子部品を装着したヒートシンク一体化パッケージの製造方法において、
前記ヒートシンク基板は、ヒートシンク本体と該ヒートシンク本体に貼り合わせた少なくとも1枚の金属板を積層した構造となっており、その金属板を前後左右の4辺の内の少なくとも1辺に延長させて、前記電子部品から発生した熱をそこから外部に逃がす熱コネクタを形成し、
前記ヒートシンク基板上に絶縁基材からなる薄膜フィルムを介して配線を形成し、かつ該ヒートシンク基板の電子部品装着面に電子部品を装着して、該電子部品の電極端子と前記配線の必要個所とを電気接続し、
支持板により水平配線部とポスト電極が一体に連結されて構成した配線付ポスト電極部品を、前記ヒートシンク基板上に装着して、前記ヒートシンク基板上の配線と接続し、
前記電子部品と前記ポスト電極とを樹脂封止した後、前記支持板を剥離し、
前記電子部品装着面とは反対の前記電子部品の裏面側において、剥離により露出した水平配線部に接続される外部電極を形成する、
ことから成るヒートシンク一体化パッケージの製造方法。 - 前記配線付ポスト電極部品の前記支持板は、該支持板に貼り付けた絶縁基材テープを有し、前記支持板を剥離することにより露出した前記絶縁基材テープを保護膜として機能させ、
前記外部電極と前記水平配線部の接続は、前記保護膜に開けた穴を介して行う請求項4に記載のヒートシンク一体化パッケージの製造方法。 - 前記ヒートシンク基板上の配線は、該ヒートシンク基板上に金属膜付テープ材を貼りつけ、かつ、この金属膜を、リソグラフィとエッチングによりパターニングすることにより形成した請求項4に記載のヒートシンク一体化パッケージの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009077954A JP5512992B2 (ja) | 2009-03-27 | 2009-03-27 | ヒートシンク一体化パッケージ及びその製造方法 |
PCT/JP2010/055014 WO2010110281A1 (ja) | 2009-03-27 | 2010-03-24 | ヒートシンク一体化パッケージ及びその製造方法 |
US13/259,563 US8988882B2 (en) | 2009-03-27 | 2010-03-24 | Heat sink package and method of manufacturing |
CN201080024593.5A CN102449756B (zh) | 2009-03-27 | 2010-03-24 | 结合散热器的封装组件以及其制造方法 |
Applications Claiming Priority (1)
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JP2009077954A JP5512992B2 (ja) | 2009-03-27 | 2009-03-27 | ヒートシンク一体化パッケージ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2010232403A JP2010232403A (ja) | 2010-10-14 |
JP5512992B2 true JP5512992B2 (ja) | 2014-06-04 |
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JP2009077954A Active JP5512992B2 (ja) | 2009-03-27 | 2009-03-27 | ヒートシンク一体化パッケージ及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8988882B2 (ja) |
JP (1) | JP5512992B2 (ja) |
CN (1) | CN102449756B (ja) |
WO (1) | WO2010110281A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10032452B1 (en) | 2016-12-30 | 2018-07-24 | Google Llc | Multimodal transmission of packetized data |
JP5665020B2 (ja) * | 2009-12-22 | 2015-02-04 | 国立大学法人九州工業大学 | 配線用電子部品の製造方法 |
US8405998B2 (en) * | 2010-10-28 | 2013-03-26 | International Business Machines Corporation | Heat sink integrated power delivery and distribution for integrated circuits |
WO2013125033A1 (ja) * | 2012-02-24 | 2013-08-29 | 株式会社メイコー | 回路基板の製造方法 |
JP2015070146A (ja) * | 2013-09-30 | 2015-04-13 | 力成科技股▲分▼有限公司 | 半導体装置 |
TWI515843B (zh) * | 2013-12-16 | 2016-01-01 | 南茂科技股份有限公司 | 晶片封裝結構 |
CN103824818B (zh) * | 2014-03-13 | 2016-08-31 | 扬州大学 | 射频微机电器件板级互连封装结构及其封装方法 |
EP3800421A1 (en) * | 2014-12-03 | 2021-04-07 | Intelligent Platforms, Llc. | Combined energy dissipation apparatus |
WO2019228517A1 (zh) * | 2018-05-31 | 2019-12-05 | 南昌欧菲生物识别技术有限公司 | 电路板组件、光电模组、深度相机和电子装置 |
CN111477595B (zh) * | 2020-06-28 | 2020-09-29 | 甬矽电子(宁波)股份有限公司 | 散热封装结构和散热封装结构的制作方法 |
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JPH04259245A (ja) * | 1991-02-14 | 1992-09-14 | Hitachi Ltd | 半導体集積回路装置 |
JPH0529502A (ja) * | 1991-07-23 | 1993-02-05 | Nec Ic Microcomput Syst Ltd | プリント基板 |
JPH05147164A (ja) | 1991-11-29 | 1993-06-15 | Sumitomo Bakelite Co Ltd | 複合化粧シート |
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JP2003007910A (ja) * | 2001-06-19 | 2003-01-10 | Matsushita Electric Ind Co Ltd | 半導体装置 |
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-
2009
- 2009-03-27 JP JP2009077954A patent/JP5512992B2/ja active Active
-
2010
- 2010-03-24 CN CN201080024593.5A patent/CN102449756B/zh not_active Expired - Fee Related
- 2010-03-24 US US13/259,563 patent/US8988882B2/en not_active Expired - Fee Related
- 2010-03-24 WO PCT/JP2010/055014 patent/WO2010110281A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2010110281A1 (ja) | 2010-09-30 |
US8988882B2 (en) | 2015-03-24 |
JP2010232403A (ja) | 2010-10-14 |
CN102449756B (zh) | 2015-08-05 |
US20120127667A1 (en) | 2012-05-24 |
CN102449756A (zh) | 2012-05-09 |
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