JP5445044B2 - 成膜装置 - Google Patents

成膜装置 Download PDF

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Publication number
JP5445044B2
JP5445044B2 JP2009258644A JP2009258644A JP5445044B2 JP 5445044 B2 JP5445044 B2 JP 5445044B2 JP 2009258644 A JP2009258644 A JP 2009258644A JP 2009258644 A JP2009258644 A JP 2009258644A JP 5445044 B2 JP5445044 B2 JP 5445044B2
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Japan
Prior art keywords
gas
separation
region
turntable
forming apparatus
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JP2009258644A
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English (en)
Japanese (ja)
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JP2011100956A5 (enExample
JP2011100956A (ja
Inventor
寿 加藤
靖 竹内
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2009258644A priority Critical patent/JP5445044B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020117008481A priority patent/KR101355234B1/ko
Priority to US13/128,908 priority patent/US8951347B2/en
Priority to CN200980135521.5A priority patent/CN102150245B/zh
Priority to TW98138629A priority patent/TWI443222B/zh
Priority to PCT/JP2009/069398 priority patent/WO2010055926A1/ja
Publication of JP2011100956A publication Critical patent/JP2011100956A/ja
Publication of JP2011100956A5 publication Critical patent/JP2011100956A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2009258644A 2008-11-14 2009-11-12 成膜装置 Active JP5445044B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009258644A JP5445044B2 (ja) 2008-11-14 2009-11-12 成膜装置
US13/128,908 US8951347B2 (en) 2008-11-14 2009-11-13 Film deposition apparatus
CN200980135521.5A CN102150245B (zh) 2008-11-14 2009-11-13 成膜装置
TW98138629A TWI443222B (zh) 2008-11-14 2009-11-13 Film forming device
KR1020117008481A KR101355234B1 (ko) 2008-11-14 2009-11-13 성막 장치
PCT/JP2009/069398 WO2010055926A1 (ja) 2008-11-14 2009-11-13 成膜装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2008292508 2008-11-14
JP2008292508 2008-11-14
JP2009233047 2009-10-07
JP2009233047 2009-10-07
JP2009258644A JP5445044B2 (ja) 2008-11-14 2009-11-12 成膜装置

Publications (3)

Publication Number Publication Date
JP2011100956A JP2011100956A (ja) 2011-05-19
JP2011100956A5 JP2011100956A5 (enExample) 2013-02-28
JP5445044B2 true JP5445044B2 (ja) 2014-03-19

Family

ID=42170056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009258644A Active JP5445044B2 (ja) 2008-11-14 2009-11-12 成膜装置

Country Status (6)

Country Link
US (1) US8951347B2 (enExample)
JP (1) JP5445044B2 (enExample)
KR (1) KR101355234B1 (enExample)
CN (1) CN102150245B (enExample)
TW (1) TWI443222B (enExample)
WO (1) WO2010055926A1 (enExample)

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JP5062144B2 (ja) * 2008-11-10 2012-10-31 東京エレクトロン株式会社 ガスインジェクター
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JP5131240B2 (ja) * 2009-04-09 2013-01-30 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5310512B2 (ja) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 基板処理装置
JP5765154B2 (ja) 2011-09-12 2015-08-19 東京エレクトロン株式会社 基板処理装置及び成膜装置
JP5884500B2 (ja) * 2012-01-18 2016-03-15 東京エレクトロン株式会社 成膜装置
JP5803714B2 (ja) * 2012-02-09 2015-11-04 東京エレクトロン株式会社 成膜装置
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JP5857896B2 (ja) 2012-07-06 2016-02-10 東京エレクトロン株式会社 成膜装置の運転方法及び成膜装置
JP5861583B2 (ja) 2012-07-13 2016-02-16 東京エレクトロン株式会社 成膜装置及び成膜方法
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JP5954202B2 (ja) 2013-01-29 2016-07-20 東京エレクトロン株式会社 成膜装置
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JP6221932B2 (ja) 2014-05-16 2017-11-01 東京エレクトロン株式会社 成膜装置
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