JP5696619B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
- Publication number
- JP5696619B2 JP5696619B2 JP2011178422A JP2011178422A JP5696619B2 JP 5696619 B2 JP5696619 B2 JP 5696619B2 JP 2011178422 A JP2011178422 A JP 2011178422A JP 2011178422 A JP2011178422 A JP 2011178422A JP 5696619 B2 JP5696619 B2 JP 5696619B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- processing
- exhaust
- region
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000008021 deposition Effects 0.000 title 1
- 239000007789 gas Substances 0.000 claims description 313
- 238000012545 processing Methods 0.000 claims description 159
- 238000000926 separation method Methods 0.000 claims description 81
- 239000010408 film Substances 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 62
- 239000012495 reaction gas Substances 0.000 claims description 26
- 239000010409 thin film Substances 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 230000001105 regulatory effect Effects 0.000 claims description 9
- 239000007795 chemical reaction product Substances 0.000 claims description 6
- 238000011144 upstream manufacturing Methods 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 52
- 230000000052 comparative effect Effects 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 14
- 238000009826 distribution Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000012546 transfer Methods 0.000 description 10
- 238000004088 simulation Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000010926 purge Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Description
前記真空容器内に設けられ、周方向に沿って基板を載置する基板載置領域をその上面に備えると共に、この基板載置領域を公転させるための回転テーブルと、
前記回転テーブルの周方向に沿って配置され、前記原料ガスが基板に吸着される第1の処理領域と、基板に吸着された前記原料ガスと前記反応ガスとが反応する第2の処理領域と、
前記第1及び第2の処理領域毎に、基板載置領域の外縁から内縁に亘って伸びるように設けられ、処理ガスを吐出するガス吐出口がその長さ方向に形成された処理ガスノズルと、
分離ガス供給部から分離ガスが供給されると共に、前記第1及び第2の処理領域の雰囲気を互いに分離するために各処理領域の間に配置された分離領域と、
前記第1及び第2の処理領域毎に処理ガスノズルに対して回転テーブルの回転方向の下流側にて、前記回転テーブルの周縁よりも外側位置に開口し、前記処理ガス及び分離ガスを排気するための排気口と、
前記第1の処理領域において、前記排気口を覆い、処理ガスノズルとこの処理ガスノズルの下流側の分離領域との間にて、基板載置領域の外縁から内縁に亘って伸びるように設けられた中空体よりなる排気部材と、を備え、
この排気部材には、回転テーブルの周縁よりも外方側の位置に第1の排気用開口部が設けられると共に、基板載置領域の少なくとも内縁側の位置に第2の排気用開口部が設けられ、
前記第1の処理領域において、前記処理ガスノズルに対して回転テーブルの回転方向の上流側には、排気口が設けられていないことを特徴とする。
前記真空容器内に設けられ、周方向に沿って基板を載置する基板載置領域をその上面に備えると共に、この基板載置領域を公転させるための回転テーブルと、
前記回転テーブルの周方向に沿って配置され、前記原料ガスが基板に吸着される第1の処理領域と、基板に吸着された前記原料ガスと前記反応ガスとが反応する第2の処理領域と、
前記第1及び第2の処理領域毎に、基板載置領域の外縁から内縁に亘って伸びるように設けられ、処理ガスを供給するガス吐出口がその長さ方向に形成された処理ガスノズルと、
分離ガス供給部から分離ガスが供給されると共に、前記第1及び第2の処理領域の雰囲気を互いに分離するために各処理領域の間に配置された分離領域と、
前記第1及び第2の処理領域毎に処理ガスノズルに対して回転テーブルの回転方向の下流側にて、前記回転テーブルの周縁よりも外側位置に開口し、前記処理ガス及び分離ガスを排気するための排気口と、
前記第1の処理領域において、処理ガスノズルと排気口の間にて、排気口の側方から基板載置領域の内縁に亘って伸び、かつ回転テーブルの上面から浮上して立設する板状の規制部材と、を備え、
前記規制部材は、処理ガスノズルから供給される処理ガスが当該規制部材の下方側を通過して排気口に向うように、処理ガスの流れを規制することを特徴とする。
(実験例1)
図1に示す成膜装置を用い、上記のプロセス条件の下、回転テーブル2の回転数を変えて、成膜サイクルを2分間実施して、ウエハW上に薄膜を形成した。次いで、得られた薄膜の膜厚、膜厚の面内均一性及びサイクルレートについて測定した(実施例1)。また、比較例1として、図1の成膜装置において排気ダクト7を設けない構成についても、同様の実験を行った。
図1に示す成膜装置の処理領域P1について、圧力分布と、第1の処理ガスの拡散状態と、第1の処理ガスの流跡について、シミュレーション解析を行った。解析条件は、ウエハ温度が400℃、プロセス圧が266Pa(2Torr)、処理ガスノズル31からのBTBASガス流量が0.9slm、分離ガスノズル41、42からのN2ガス流量が夫々0.33slm、0.067slm、分離ガス供給管30aからのN2ガス流量が2.5slm、パージガス供給管30bからのN2ガス流量が0.067slm、回転テーブルの回転数を60rpmとした。このとき、排気ダクト7を設けた場合(実施例1)と、排気ダクト7を設けない場合(比較例1)について、夫々評価を行った。前記圧力分布についてのシミュレーション結果について、実施例1は図24に、比較例1は図25に夫々示す。また、第1の処理ガスの拡散状態について、実施例1は図26に、比較例1は図27に夫々示す。さらに、第1の処理ガスの流跡について、実施例1は図28に、比較例1は図29に夫々示す。
図1に示す成膜装置の処理領域P1について、シミュレーション1の評価条件(回転テーブル2の回転数は240rpmとした)にて、圧力分布と、第1の処理ガスの拡散状態について、シミュレーション解析を行った。このとき、排気ダクト7の全てのスリットを開放した場合(実施例2)と、中空部材72の分離領域D側の側面のスリット76bを閉じた場合(実施例3)と、中空部材72の分離領域D側の側面のスリット76bと中空部材72の下面に形成されたスリット75を閉じた場合(実施例4)について、夫々評価を行った。実施例2のシミュレーション結果について、圧力分布は図30に、ガスの拡散状態は図31に夫々示す。また、前記実施例3のシミュレーション結果について、圧力分布は図32に、ガスの拡散状態は図33に夫々示す。さらに、前記実施例4のシミュレーション結果について、圧力分布は図34に、ガスの拡散状態は図35に夫々示す。
W ウエハ
2 回転テーブル
24 凹部
31 第1の反応ガスノズル
32 第2の反応ガスノズル
5 ヒータユニット
61 第1の排気口
62 第2の排気口
7 排気ダクト
71 カバー体
73 中空部材
73,74,76,77 スリット
75 開口部
Claims (8)
- 真空容器内にて原料ガスと、基板に吸着された前記原料ガスと反応して反応生成物を生成するための反応ガスと、を交互に繰り返し供給して基板上に薄膜を形成する成膜装置において、
前記真空容器内に設けられ、周方向に沿って基板を載置する基板載置領域をその上面に備えると共に、この基板載置領域を公転させるための回転テーブルと、
前記回転テーブルの周方向に沿って配置され、前記原料ガスが基板に吸着される第1の処理領域と、基板に吸着された前記原料ガスと前記反応ガスとが反応する第2の処理領域と、
前記第1及び第2の処理領域毎に、基板載置領域の外縁から内縁に亘って伸びるように設けられ、処理ガスを吐出するガス吐出口がその長さ方向に形成された処理ガスノズルと、
分離ガス供給部から分離ガスが供給されると共に、前記第1及び第2の処理領域の雰囲気を互いに分離するために各処理領域の間に配置された分離領域と、
前記第1及び第2の処理領域毎に処理ガスノズルに対して回転テーブルの回転方向の下流側にて、前記回転テーブルの周縁よりも外側位置に開口し、前記処理ガス及び分離ガスを排気するための排気口と、
前記第1の処理領域において、前記排気口を覆い、処理ガスノズルとこの処理ガスノズルの下流側の分離領域との間にて、基板載置領域の外縁から内縁に亘って伸びるように設けられた中空体よりなる排気部材と、を備え、
この排気部材には、回転テーブルの周縁よりも外方側の位置に第1の排気用開口部が設けられると共に、基板載置領域の少なくとも内縁側の位置に第2の排気用開口部が設けられ、
前記第1の処理領域において、前記処理ガスノズルに対して回転テーブルの回転方向の上流側には、排気口が設けられていないことを特徴とする成膜装置。 - 前記排気用開口部は、中空体の下面及び側面の少なくとも一方に設けられることを特徴とする請求項1記載の成膜装置。
- 前記排気部材は、前記真空容器に対して着脱自在に設けられていることを特徴とする請求項1又は2記載の成膜装置。
- 前記排気用開口部は、前記排気部材の長手方向に沿って配列された複数のスリットを含むことを特徴とする請求項1ないし3のいずれか一つに記載の成膜装置。
- 前記排気部材は、処理ガスノズルと対向する側面が、ガス吐出口と略平行に設けられることを特徴とする請求項1ないし4のいずれか一つに記載の成膜装置。
- 前記第2の排気用開口部は、基板載置領域の内縁側に向うにつれて、開口領域が大きくなるように形成されることを特徴とする請求項1ないし5のいずれか一つに記載の成膜装置。
- 前記排気用開口部は排気部材の長さ方向に沿って形成され、
前記排気用開口部の一部を塞ぐための蓋部材を、前記排気部材に着脱自在に設けたことを特徴とする請求項1ないし6のいずれか一つに記載の成膜装置。 - 真空容器内にて原料ガスと、基板に吸着された前記原料ガスと反応して反応生成物を生成するための反応ガスと、を交互に繰り返し供給して基板上に薄膜を形成する成膜装置において、
前記真空容器内に設けられ、周方向に沿って基板を載置する基板載置領域をその上面に備えると共に、この基板載置領域を公転させるための回転テーブルと、
前記回転テーブルの周方向に沿って配置され、前記原料ガスが基板に吸着される第1の処理領域と、基板に吸着された前記原料ガスと前記反応ガスとが反応する第2の処理領域と、
前記第1及び第2の処理領域毎に、基板載置領域の外縁から内縁に亘って伸びるように設けられ、処理ガスを供給するガス吐出口がその長さ方向に形成された処理ガスノズルと、
分離ガス供給部から分離ガスが供給されると共に、前記第1及び第2の処理領域の雰囲気を互いに分離するために各処理領域の間に配置された分離領域と、
前記第1及び第2の処理領域毎に処理ガスノズルに対して回転テーブルの回転方向の下流側にて、前記回転テーブルの周縁よりも外側位置に開口し、前記処理ガス及び分離ガスを排気するための排気口と、
前記第1の処理領域において、処理ガスノズルと排気口の間にて、排気口の側方から基板載置領域の内縁に亘って伸び、かつ回転テーブルの上面から浮上して立設する板状の規制部材と、を備え、
前記規制部材は、処理ガスノズルから供給される処理ガスが当該規制部材の下方側を通過して排気口に向うように、処理ガスの流れを規制することを特徴とする成膜装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011178422A JP5696619B2 (ja) | 2011-08-17 | 2011-08-17 | 成膜装置 |
US13/571,546 US9062373B2 (en) | 2011-08-17 | 2012-08-10 | Film deposition apparatus |
TW101129652A TWI505358B (zh) | 2011-08-17 | 2012-08-16 | 成膜裝置 |
KR1020120089372A KR101558649B1 (ko) | 2011-08-17 | 2012-08-16 | 성막 장치 |
CN201210295000.XA CN102953047B (zh) | 2011-08-17 | 2012-08-17 | 成膜装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011178422A JP5696619B2 (ja) | 2011-08-17 | 2011-08-17 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013042008A JP2013042008A (ja) | 2013-02-28 |
JP5696619B2 true JP5696619B2 (ja) | 2015-04-08 |
Family
ID=47711724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011178422A Active JP5696619B2 (ja) | 2011-08-17 | 2011-08-17 | 成膜装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9062373B2 (ja) |
JP (1) | JP5696619B2 (ja) |
KR (1) | KR101558649B1 (ja) |
CN (1) | CN102953047B (ja) |
TW (1) | TWI505358B (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5131240B2 (ja) * | 2009-04-09 | 2013-01-30 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5423529B2 (ja) * | 2010-03-29 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
US8679726B2 (en) * | 2012-05-29 | 2014-03-25 | Eastman Kodak Company | Negative-working lithographic printing plate precursors |
US9748120B2 (en) * | 2013-07-01 | 2017-08-29 | Lam Research Ag | Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus |
JP2014175483A (ja) * | 2013-03-08 | 2014-09-22 | Hitachi Kokusai Electric Inc | 基板処理装置、及び半導体装置の製造方法 |
JP6115244B2 (ja) * | 2013-03-28 | 2017-04-19 | 東京エレクトロン株式会社 | 成膜装置 |
US9245777B2 (en) | 2013-05-15 | 2016-01-26 | Lam Research Ag | Apparatus for liquid treatment of wafer shaped articles and heating system for use in such apparatus |
JP6287240B2 (ja) * | 2014-01-17 | 2018-03-07 | 東京エレクトロン株式会社 | 真空処理装置及び真空処理方法 |
JP6221932B2 (ja) * | 2014-05-16 | 2017-11-01 | 東京エレクトロン株式会社 | 成膜装置 |
JP6318869B2 (ja) * | 2014-05-30 | 2018-05-09 | 東京エレクトロン株式会社 | 成膜装置 |
KR102297567B1 (ko) * | 2014-09-01 | 2021-09-02 | 삼성전자주식회사 | 가스 주입 장치 및 이를 포함하는 박막 증착 장비 |
JP6447393B2 (ja) * | 2015-07-06 | 2019-01-09 | 東京エレクトロン株式会社 | 成膜処理装置、成膜処理方法及び記憶媒体 |
CN107475689A (zh) * | 2017-08-28 | 2017-12-15 | 常州亿晶光电科技有限公司 | 一种改善理想机台沉积ALOx膜均匀性的方法 |
CN107881487B (zh) * | 2017-11-09 | 2019-12-03 | 上海华力微电子有限公司 | 一种边缘保护圈结构、反应室和化学气相沉积设备 |
JP7068937B2 (ja) * | 2018-06-15 | 2022-05-17 | 東京エレクトロン株式会社 | 基板処理装置 |
JP7253972B2 (ja) * | 2019-05-10 | 2023-04-07 | 東京エレクトロン株式会社 | 基板処理装置 |
JP7274387B2 (ja) | 2019-09-24 | 2023-05-16 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
CN114563933A (zh) * | 2020-11-27 | 2022-05-31 | 沈阳芯源微电子设备股份有限公司 | 一种用于晶圆烘烤单元的盘盖结构 |
CN113846315B (zh) * | 2021-09-27 | 2022-08-02 | 华中科技大学 | 空间隔离原子层沉积装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6457712A (en) * | 1987-08-28 | 1989-03-06 | Sumitomo Metal Ind | Vapor growth device |
JPH01249694A (ja) * | 1988-03-31 | 1989-10-04 | Asahi Glass Co Ltd | 化合物半導体の気相成長装置および気相成長方法 |
JP4817210B2 (ja) * | 2000-01-06 | 2011-11-16 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
US20070218702A1 (en) * | 2006-03-15 | 2007-09-20 | Asm Japan K.K. | Semiconductor-processing apparatus with rotating susceptor |
JP5310283B2 (ja) * | 2008-06-27 | 2013-10-09 | 東京エレクトロン株式会社 | 成膜方法、成膜装置、基板処理装置及び記憶媒体 |
US20090324826A1 (en) * | 2008-06-27 | 2009-12-31 | Hitoshi Kato | Film Deposition Apparatus, Film Deposition Method, and Computer Readable Storage Medium |
JP5287592B2 (ja) * | 2009-08-11 | 2013-09-11 | 東京エレクトロン株式会社 | 成膜装置 |
JP5396264B2 (ja) * | 2009-12-25 | 2014-01-22 | 東京エレクトロン株式会社 | 成膜装置 |
-
2011
- 2011-08-17 JP JP2011178422A patent/JP5696619B2/ja active Active
-
2012
- 2012-08-10 US US13/571,546 patent/US9062373B2/en active Active
- 2012-08-16 KR KR1020120089372A patent/KR101558649B1/ko active IP Right Grant
- 2012-08-16 TW TW101129652A patent/TWI505358B/zh active
- 2012-08-17 CN CN201210295000.XA patent/CN102953047B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
TW201334066A (zh) | 2013-08-16 |
CN102953047B (zh) | 2015-10-21 |
CN102953047A (zh) | 2013-03-06 |
JP2013042008A (ja) | 2013-02-28 |
US20130042813A1 (en) | 2013-02-21 |
TWI505358B (zh) | 2015-10-21 |
KR20130020593A (ko) | 2013-02-27 |
US9062373B2 (en) | 2015-06-23 |
KR101558649B1 (ko) | 2015-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5696619B2 (ja) | 成膜装置 | |
US11201053B2 (en) | Film forming method and film forming apparatus | |
JP5553588B2 (ja) | 成膜装置 | |
JP5310283B2 (ja) | 成膜方法、成膜装置、基板処理装置及び記憶媒体 | |
JP5392069B2 (ja) | 成膜装置 | |
JP5287592B2 (ja) | 成膜装置 | |
US8808456B2 (en) | Film deposition apparatus and substrate process apparatus | |
US9076649B2 (en) | Film forming method and apparatus | |
JP5375853B2 (ja) | 成膜装置、成膜方法及び記憶媒体 | |
JP5434484B2 (ja) | 成膜装置、成膜方法及び記憶媒体 | |
KR101592583B1 (ko) | 성막 장치, 성막 장치의 클리닝 방법 및 컴퓨터 판독 가능 기억 매체 | |
KR101531084B1 (ko) | 성막 장치 | |
US20090324826A1 (en) | Film Deposition Apparatus, Film Deposition Method, and Computer Readable Storage Medium | |
JP5712879B2 (ja) | 成膜装置及び基板処理装置 | |
CN106319481B (zh) | 基板处理方法以及基板处理装置 | |
US20100068893A1 (en) | Film deposition apparatus, film deposition method, and computer readable storage medium | |
KR101606617B1 (ko) | 성막 방법 및 성막 장치 | |
JP6196106B2 (ja) | シリコン酸化膜の製造方法 | |
JP2010129983A (ja) | 成膜装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140128 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140929 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141014 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141215 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150113 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150126 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5696619 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |