JP2010219125A - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
- Publication number
- JP2010219125A JP2010219125A JP2009061350A JP2009061350A JP2010219125A JP 2010219125 A JP2010219125 A JP 2010219125A JP 2009061350 A JP2009061350 A JP 2009061350A JP 2009061350 A JP2009061350 A JP 2009061350A JP 2010219125 A JP2010219125 A JP 2010219125A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- compensation
- film forming
- region
- mounting table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002093 peripheral effect Effects 0.000 claims abstract description 86
- 239000007789 gas Substances 0.000 claims description 679
- 238000000926 separation method Methods 0.000 claims description 97
- 239000010408 film Substances 0.000 claims description 87
- 239000012495 reaction gas Substances 0.000 claims description 63
- 238000012545 processing Methods 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 34
- 238000009826 distribution Methods 0.000 claims description 27
- 230000007246 mechanism Effects 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 15
- 238000013459 approach Methods 0.000 claims description 8
- 239000007795 chemical reaction product Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 78
- 230000001590 oxidative effect Effects 0.000 description 38
- 238000000034 method Methods 0.000 description 32
- 238000010926 purge Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 23
- 238000012546 transfer Methods 0.000 description 20
- 239000002994 raw material Substances 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000007599 discharging Methods 0.000 description 7
- 238000011144 upstream manufacturing Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】真空容器1内に設けられたウエハWの載置台(回転テーブル2)に対して、回転テーブル2の回転中心部から周縁部に向かって伸びるように設けられた第1の主ガスノズル31から原料ガスを供給すると共に、補償用ガスノズル32,33より、前記回転テーブル2の径方向において前記主ガス供給ノズル31により供給された反応ガスのガス濃度が低い領域に、補償用の反応ガスを供給する。これにより前記回転テーブル2の径方向において、反応ガスのガス濃度の均一性が高まり、ウエハWに対して面内均一性の高い成膜処理を行うことができる。
【選択図】図2
Description
真空容器内にて反応ガスを基板の表面に供給することにより薄膜を形成する成膜装置において、
前記真空容器内に設けられ、その中心部を中心とする円に沿って形成された基板の載置領域を備えた載置台と、
この載置台の前記載置領域に反応ガスを供給するために、前記載置台に対向して設けられた主ガス供給手段と、
前記載置台の径方向において前記主ガス供給手段により供給された反応ガスのガス濃度分布を補償するために、前記反応ガスを前記載置台の表面に対して供給する補償用ガス供給手段と、
前記載置台を、前記主ガス供給手段及び補償用ガス供給手段に対して相対的に、当該載置台の中心部を回転軸として鉛直軸回りに回転させるための回転機構と、を備えたことを特徴とする。
これらガスノズルは、真空容器1内に第1の反応ガス例えば原料ガスを供給するために、例えば3本のガスノズルを備えた原料ガスノズル群3と、真空容器1内に第2の反応ガス例えば酸化ガスを供給するために、例えば3本のガスノズルを備えた酸化ガスノズル群4と、真空容器1内に分離ガスを供給するための2本の分離ガスノズル51,52とからなる。
W ウエハ
11 天板
12 容器本体
15 搬送口
2 回転テーブル
21 コア部
24 凹部(基板載置領域)
31 第1の主ガスノズル
32 第1の中心側補償用ガスノズル
33 第1の周縁側補償用ガスノズル
41 第2の主ガスノズル
42 第2の中心側補償用ガスノズル
43 第2の周縁側補償用ガスノズル
51,52 分離ガスノズル
P1 第1の処理領域
P2 第2の処理領域
D 分離領域
C 中心部領域
5 凸状部
54 第1の天井面
55 第2の天井面
6 突出部
61 分離ガス供給管
7 排気領域
71,72 排気口
8 ヒータユニット
82〜85 パージガス供給管
9,110 吐出位置調整ガスノズル
91,111 外管
92 内管
97 スリット
120 ロッド体
121 凸部
Claims (12)
- 真空容器内にて反応ガスを基板の表面に供給することにより薄膜を形成する成膜装置において、
前記真空容器内に設けられ、その中心部を中心とする円に沿って形成された基板の載置領域を備えた載置台と、
この載置台の前記載置領域に反応ガスを供給するために、前記載置台に対向して設けられた主ガス供給手段と、
前記載置台の径方向において前記主ガス供給手段により供給された反応ガスのガス濃度分布を補償するために、前記反応ガスを前記載置台の表面に対して供給する補償用ガス供給手段と、
前記載置台を、前記主ガス供給手段及び補償用ガス供給手段に対して相対的に、当該載置台の中心部を回転軸として鉛直軸回りに回転させるための回転機構と、を備えたことを特徴とする成膜装置。 - 前記補償用ガス供給手段は、前記載置台の中心部及び周縁部の一方側から他方側に伸びるように設けられ、少なくともその長さ方向の一部にガス吐出口が形成されている補償用ガスノズルにより構成されることを特徴とする請求項1記載の成膜装置。
- 前記補償用ガスノズルは複数設けられ、これら補償用ガスノズルは、載置台の径方向で見て、ガス吐出口が形成された領域が互いに異なるように構成されていることを特徴とする請求項2記載の成膜装置。
- 前記補償用ガスノズルは、前記載置台の中心部及び周縁部の一方側から他方側に向かう長さ方向に沿ってガス吐出口が形成される外管と、
この外管の内部に当該外管と隙間を介して同心状に設けられる管体またはロッド体からなる棒状体と、
前記外管のガス吐出口の上方側におけるコンダクタンスを調整するために、前記棒状体の長さ方向の少なくとも一部に設けられたコンダクタンス調整部材と、
前記コンダクタンス調整部材を前記外管のガス吐出口に接近する位置と、離れた位置との間で移動させるために、前記棒状体と外管とを相対的に移動させる移動機構と、を備えたことを特徴とする請求項2記載の成膜装置。 - 前記棒状体はその内部に反応ガスが供給される管体により構成されており、前記コンダクタンス調整部材はこの管体に形成されたガス吐出口であることを特徴とする請求項4記載の成膜装置。
- 前記移動機構は、前記管体に形成されたガス吐出口を前記外管のガス吐出口に接近させるために、前記管体を水平軸回りに回転させる回転機構であることを特徴とする請求項5記載の成膜装置。
- 前記ガス吐出口は複数形成されると共に、これらガス吐出口は前記管体の周方向における異なる領域であって、かつ前記管体の長さ方向における異なる領域に形成され、
前記回転機構は、前記管体の周方向における異なる領域に形成されたガス吐出口を夫々外管のガス吐出口に接近させるために、前記管体を水平軸回りに回転させることを特徴とする請求項6記載の成膜装置。 - 前記棒状体はロッド体により構成されており、前記コンダクタンス調整部材は、前記外管のガス吐出口を覆うように前記ロッド体の周囲に設けられた凸部であることを特徴とする請求項4記載の成膜装置。
- 前記移動機構は、前記凸部を前記外管のガス吐出口に接近させるために、前記ロッド体を水平軸回りに回転させる回転機構であることを特徴とする請求項8記載の成膜装置。
- 前記凸部は複数形成されると共に、これら凸部は前記ロッド体の周方向における異なる領域であって、かつ前記ロッド体の長さ方向における異なる領域に設けられ、
前記回転機構は、前記複数の凸部を夫々外管のガス吐出口に対して接近させるために、前記ロッド体を水平軸回りに回転させることを特徴とすることを特徴とする請求項9記載の成膜装置。 - 前記主ガス供給手段は、前記載置台の表面に夫々第1の反応ガス及び、この第1の反応ガスと反応する第2の反応ガスを供給するために、前記載置台に対する主ガス供給手段の相対的回転方向に互いに離れるように設けられた第1の主ガス供給手段及び第2の主ガス供給手段よりなり、
前記第1の反応ガスが供給される第1の処理領域と第2の反応ガスが供給される第2の処理領域との雰囲気を分離するために前記移動方向においてこれら処理領域の間に位置する分離領域を備え、
前記真空容器内にて互いに反応する第1の反応ガスと第2の反応ガスを順番に基板の表面に供給しかつこの供給サイクルを実行することにより反応生成物の層を多数積層して薄膜を形成することを特徴とする請求項1ないし10のいずれか一つに記載の成膜装置。 - 前記分離領域は、分離ガスを供給するための分離ガス供給手段と、この分離ガス供給手段の前記回転方向両側に位置し、当該分離領域から処理領域側に分離ガスが流れるための狭隘な空間を載置台との間に形成するための天井面と、を備えたことを特徴とする請求項11記載の成膜装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009061350A JP5141607B2 (ja) | 2009-03-13 | 2009-03-13 | 成膜装置 |
US12/713,317 US9093490B2 (en) | 2009-03-13 | 2010-02-26 | Film deposition apparatus |
KR1020100022208A KR101569944B1 (ko) | 2009-03-13 | 2010-03-12 | 성막 장치 |
TW099107179A TWI494464B (zh) | 2009-03-13 | 2010-03-12 | 成膜裝置 |
CN2010101335610A CN101831632B (zh) | 2009-03-13 | 2010-03-15 | 成膜装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009061350A JP5141607B2 (ja) | 2009-03-13 | 2009-03-13 | 成膜装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010219125A true JP2010219125A (ja) | 2010-09-30 |
JP2010219125A5 JP2010219125A5 (ja) | 2011-12-15 |
JP5141607B2 JP5141607B2 (ja) | 2013-02-13 |
Family
ID=42715849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009061350A Active JP5141607B2 (ja) | 2009-03-13 | 2009-03-13 | 成膜装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9093490B2 (ja) |
JP (1) | JP5141607B2 (ja) |
KR (1) | KR101569944B1 (ja) |
CN (1) | CN101831632B (ja) |
TW (1) | TWI494464B (ja) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012084598A (ja) * | 2010-10-07 | 2012-04-26 | Tokyo Electron Ltd | 成膜装置、成膜方法及び記憶媒体 |
US8721790B2 (en) * | 2009-12-10 | 2014-05-13 | Tokyo Electron Limited | Film deposition apparatus |
US8746170B2 (en) * | 2009-11-04 | 2014-06-10 | Tokyo Electron Limited | Substrate process apparatus, substrate process method, and computer readable storage medium |
US8845857B2 (en) * | 2009-12-02 | 2014-09-30 | Tokyo Electron Limited | Substrate processing apparatus |
US8951347B2 (en) * | 2008-11-14 | 2015-02-10 | Tokyo Electron Limited | Film deposition apparatus |
US9053909B2 (en) * | 2008-08-29 | 2015-06-09 | Tokyo Electron Limited | Activated gas injector, film deposition apparatus, and film deposition method |
JP2015213108A (ja) * | 2014-05-01 | 2015-11-26 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP2016042561A (ja) * | 2014-08-19 | 2016-03-31 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
JP2016065268A (ja) * | 2014-09-24 | 2016-04-28 | 株式会社日立国際電気 | 基板処理装置、ガス導入シャフト及びガス供給プレート |
JP2016162931A (ja) * | 2015-03-03 | 2016-09-05 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP2017212244A (ja) * | 2016-05-23 | 2017-11-30 | 東京エレクトロン株式会社 | 成膜方法 |
JP2018029120A (ja) * | 2016-08-17 | 2018-02-22 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP2019004113A (ja) * | 2017-06-19 | 2019-01-10 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
JP2019087618A (ja) * | 2017-11-06 | 2019-06-06 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP2020037740A (ja) * | 2018-08-30 | 2020-03-12 | 芝浦メカトロニクス株式会社 | プラズマ処理装置 |
CN111081600A (zh) * | 2018-10-19 | 2020-04-28 | Asm Ip私人控股有限公司 | 基板处理装置及基板处理方法 |
JP2020080359A (ja) * | 2018-11-12 | 2020-05-28 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP2021044419A (ja) * | 2019-09-12 | 2021-03-18 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及び記録媒体 |
JP2021052154A (ja) * | 2019-09-26 | 2021-04-01 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
JP2022052933A (ja) * | 2020-09-24 | 2022-04-05 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5131240B2 (ja) * | 2009-04-09 | 2013-01-30 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5870568B2 (ja) | 2011-05-12 | 2016-03-01 | 東京エレクトロン株式会社 | 成膜装置、プラズマ処理装置、成膜方法及び記憶媒体 |
TWI511223B (zh) * | 2011-06-03 | 2015-12-01 | Hermes Epitek Corp | 半導體設備 |
JP5923300B2 (ja) * | 2011-12-28 | 2016-05-24 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
KR101372333B1 (ko) * | 2012-02-16 | 2014-03-14 | 주식회사 유진테크 | 기판 처리 모듈 및 이를 포함하는 기판 처리 장치 |
US9748120B2 (en) * | 2013-07-01 | 2017-08-29 | Lam Research Ag | Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus |
JP5939147B2 (ja) | 2012-12-14 | 2016-06-22 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置及び成膜方法 |
JP6115244B2 (ja) * | 2013-03-28 | 2017-04-19 | 東京エレクトロン株式会社 | 成膜装置 |
CN103205733A (zh) * | 2013-04-27 | 2013-07-17 | 南昌黄绿照明有限公司 | 一种多混气室垂直气流型mocvd喷头装置 |
US9245777B2 (en) | 2013-05-15 | 2016-01-26 | Lam Research Ag | Apparatus for liquid treatment of wafer shaped articles and heating system for use in such apparatus |
JP5924336B2 (ja) * | 2013-12-27 | 2016-05-25 | Jfeスチール株式会社 | 化学蒸着処理の原料ガス供給用ノズル |
JP6221932B2 (ja) * | 2014-05-16 | 2017-11-01 | 東京エレクトロン株式会社 | 成膜装置 |
JP6305314B2 (ja) * | 2014-10-29 | 2018-04-04 | 東京エレクトロン株式会社 | 成膜装置およびシャワーヘッド |
US10954597B2 (en) * | 2015-03-17 | 2021-03-23 | Asm Ip Holding B.V. | Atomic layer deposition apparatus |
JP6435967B2 (ja) * | 2015-03-31 | 2018-12-12 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
JP6447393B2 (ja) * | 2015-07-06 | 2019-01-09 | 東京エレクトロン株式会社 | 成膜処理装置、成膜処理方法及び記憶媒体 |
WO2017044754A1 (en) * | 2015-09-11 | 2017-03-16 | Applied Materials, Inc. | Plasma module with slotted ground plate |
JP6569521B2 (ja) | 2015-12-24 | 2019-09-04 | 東京エレクトロン株式会社 | 成膜装置 |
JP6569520B2 (ja) * | 2015-12-24 | 2019-09-04 | 東京エレクトロン株式会社 | 成膜装置 |
WO2017188947A1 (en) * | 2016-04-27 | 2017-11-02 | Applied Materials, Inc. | System for atomic layer deposition on flexible substrates and method for the same |
JP6608332B2 (ja) * | 2016-05-23 | 2019-11-20 | 東京エレクトロン株式会社 | 成膜装置 |
SG11201810824UA (en) * | 2016-06-03 | 2019-01-30 | Applied Materials Inc | Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber |
KR102634044B1 (ko) * | 2016-09-06 | 2024-02-06 | 주성엔지니어링(주) | 기판 처리 장치용 가스 분사 장치 및 기판 처리 장치 |
JP6767844B2 (ja) * | 2016-11-11 | 2020-10-14 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
US20180163296A1 (en) * | 2016-12-12 | 2018-06-14 | National Chung Shan Institute Of Science And Technology | Equipment for producing film |
CN111863699B (zh) * | 2019-04-28 | 2023-12-22 | 北京北方华创微电子装备有限公司 | 承载装置及工艺腔室 |
JP7253972B2 (ja) * | 2019-05-10 | 2023-04-07 | 東京エレクトロン株式会社 | 基板処理装置 |
JP7246247B2 (ja) * | 2019-05-15 | 2023-03-27 | 東京エレクトロン株式会社 | 基板処理装置及び監視方法 |
CN111968938A (zh) * | 2019-05-20 | 2020-11-20 | 北京北方华创微电子装备有限公司 | 承载装置和工艺腔室 |
WO2022241561A1 (en) * | 2021-05-20 | 2022-11-24 | Nuionic Technologies (Canada) Inc. | Systems, apparatuses, utilization of microwave energy within a microwave reactor |
CN113725061A (zh) * | 2021-09-01 | 2021-11-30 | 长鑫存储技术有限公司 | 晶圆处理装置及方法 |
CN114134486B (zh) * | 2021-12-09 | 2023-06-09 | 拓荆科技股份有限公司 | 一种反应腔匀气结构 |
CN114836727B (zh) * | 2022-04-20 | 2024-04-09 | 广东振华科技股份有限公司 | 一种多层膜系的各层膜厚检测系统及其检测方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01310533A (ja) * | 1988-06-09 | 1989-12-14 | Fujitsu Ltd | 有機金属気相成長装置 |
JPH08255792A (ja) * | 1995-03-16 | 1996-10-01 | Toshiba Corp | 半導体装置の製造方法 |
JPH09213998A (ja) * | 1996-01-30 | 1997-08-15 | Kyocera Corp | 窒化物半導体単結晶薄膜の成長方法及び同装置 |
JP2001110730A (ja) * | 1999-10-07 | 2001-04-20 | Tokyo Electron Ltd | 縦型熱処理装置 |
JP2001254181A (ja) * | 2000-01-06 | 2001-09-18 | Tokyo Electron Ltd | 成膜装置および成膜方法 |
JP2001267309A (ja) * | 2000-03-16 | 2001-09-28 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
JP2002009065A (ja) * | 2000-06-22 | 2002-01-11 | Mitsubishi Heavy Ind Ltd | プラズマcvd装置 |
JP2006287071A (ja) * | 2005-04-01 | 2006-10-19 | Seiko Epson Corp | 半導体装置の製造方法、製造装置ならびに電子機器 |
JP2008509547A (ja) * | 2004-08-06 | 2008-03-27 | アイクストロン、アーゲー | 高いスループットのcvd装置及び方法 |
JP2008078452A (ja) * | 2006-09-22 | 2008-04-03 | Tokyo Electron Ltd | 被処理体の酸化装置及び酸化方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03144664A (ja) | 1989-10-31 | 1991-06-20 | Mita Ind Co Ltd | 自動原稿送り装置 |
GB9217461D0 (en) * | 1992-08-17 | 1992-09-30 | Sprayforming Dev Ltd | Singleton rotary valve |
JP3144664B2 (ja) | 1992-08-29 | 2001-03-12 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
US5522934A (en) * | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
US20020134507A1 (en) * | 1999-12-22 | 2002-09-26 | Silicon Valley Group, Thermal Systems Llc | Gas delivery metering tube |
US6932871B2 (en) * | 2002-04-16 | 2005-08-23 | Applied Materials, Inc. | Multi-station deposition apparatus and method |
US20040129212A1 (en) * | 2002-05-20 | 2004-07-08 | Gadgil Pradad N. | Apparatus and method for delivery of reactive chemical precursors to the surface to be treated |
US20050084610A1 (en) * | 2002-08-13 | 2005-04-21 | Selitser Simon I. | Atmospheric pressure molecular layer CVD |
EP1992007A4 (en) * | 2006-03-03 | 2010-05-05 | Prasad Gadgil | APPARATUS AND METHOD FOR THIN FILM CHEMICAL PROCESSING BY MULTIPLE ATOMIC LAYER OVER AN EXTENDED AREA |
US20070218702A1 (en) * | 2006-03-15 | 2007-09-20 | Asm Japan K.K. | Semiconductor-processing apparatus with rotating susceptor |
US20080226842A1 (en) * | 2006-09-29 | 2008-09-18 | Tokyo Electron Limited | Lazy Susan Tool Layout for Light-Activated ALD |
US8043432B2 (en) * | 2007-02-12 | 2011-10-25 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
US8092599B2 (en) * | 2007-07-10 | 2012-01-10 | Veeco Instruments Inc. | Movable injectors in rotating disc gas reactors |
KR100998011B1 (ko) * | 2008-05-22 | 2010-12-03 | 삼성엘이디 주식회사 | 화학기상 증착장치 |
US20100098851A1 (en) * | 2008-10-20 | 2010-04-22 | Varian Semiconductor Equipment Associates, Inc. | Techniques for atomic layer deposition |
-
2009
- 2009-03-13 JP JP2009061350A patent/JP5141607B2/ja active Active
-
2010
- 2010-02-26 US US12/713,317 patent/US9093490B2/en active Active
- 2010-03-12 KR KR1020100022208A patent/KR101569944B1/ko active IP Right Grant
- 2010-03-12 TW TW099107179A patent/TWI494464B/zh active
- 2010-03-15 CN CN2010101335610A patent/CN101831632B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01310533A (ja) * | 1988-06-09 | 1989-12-14 | Fujitsu Ltd | 有機金属気相成長装置 |
JPH08255792A (ja) * | 1995-03-16 | 1996-10-01 | Toshiba Corp | 半導体装置の製造方法 |
JPH09213998A (ja) * | 1996-01-30 | 1997-08-15 | Kyocera Corp | 窒化物半導体単結晶薄膜の成長方法及び同装置 |
JP2001110730A (ja) * | 1999-10-07 | 2001-04-20 | Tokyo Electron Ltd | 縦型熱処理装置 |
JP2001254181A (ja) * | 2000-01-06 | 2001-09-18 | Tokyo Electron Ltd | 成膜装置および成膜方法 |
JP2001267309A (ja) * | 2000-03-16 | 2001-09-28 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
JP2002009065A (ja) * | 2000-06-22 | 2002-01-11 | Mitsubishi Heavy Ind Ltd | プラズマcvd装置 |
JP2008509547A (ja) * | 2004-08-06 | 2008-03-27 | アイクストロン、アーゲー | 高いスループットのcvd装置及び方法 |
JP2006287071A (ja) * | 2005-04-01 | 2006-10-19 | Seiko Epson Corp | 半導体装置の製造方法、製造装置ならびに電子機器 |
JP2008078452A (ja) * | 2006-09-22 | 2008-04-03 | Tokyo Electron Ltd | 被処理体の酸化装置及び酸化方法 |
Cited By (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9053909B2 (en) * | 2008-08-29 | 2015-06-09 | Tokyo Electron Limited | Activated gas injector, film deposition apparatus, and film deposition method |
US8951347B2 (en) * | 2008-11-14 | 2015-02-10 | Tokyo Electron Limited | Film deposition apparatus |
US8746170B2 (en) * | 2009-11-04 | 2014-06-10 | Tokyo Electron Limited | Substrate process apparatus, substrate process method, and computer readable storage medium |
US8845857B2 (en) * | 2009-12-02 | 2014-09-30 | Tokyo Electron Limited | Substrate processing apparatus |
US8721790B2 (en) * | 2009-12-10 | 2014-05-13 | Tokyo Electron Limited | Film deposition apparatus |
JP2012084598A (ja) * | 2010-10-07 | 2012-04-26 | Tokyo Electron Ltd | 成膜装置、成膜方法及び記憶媒体 |
JP2015213108A (ja) * | 2014-05-01 | 2015-11-26 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP2016042561A (ja) * | 2014-08-19 | 2016-03-31 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
US10604839B2 (en) | 2014-08-19 | 2020-03-31 | Kokusai Electric Corporation | Substrate processing apparatus, method of manufacturing semiconductor device, and method of processing substrate |
JP2016065268A (ja) * | 2014-09-24 | 2016-04-28 | 株式会社日立国際電気 | 基板処理装置、ガス導入シャフト及びガス供給プレート |
JP2016162931A (ja) * | 2015-03-03 | 2016-09-05 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP2017212244A (ja) * | 2016-05-23 | 2017-11-30 | 東京エレクトロン株式会社 | 成膜方法 |
JP2018029120A (ja) * | 2016-08-17 | 2018-02-22 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
KR20180020093A (ko) * | 2016-08-17 | 2018-02-27 | 도쿄엘렉트론가부시키가이샤 | 성막 장치, 성막 방법 및 기억 매체 |
KR102161875B1 (ko) | 2016-08-17 | 2020-10-05 | 도쿄엘렉트론가부시키가이샤 | 성막 장치, 성막 방법 및 기억 매체 |
JP2019004113A (ja) * | 2017-06-19 | 2019-01-10 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
JP2019087618A (ja) * | 2017-11-06 | 2019-06-06 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
US11492702B2 (en) | 2017-11-06 | 2022-11-08 | Tokyo Electron Limited | Film-forming apparatus and film-forming method |
JP2020037740A (ja) * | 2018-08-30 | 2020-03-12 | 芝浦メカトロニクス株式会社 | プラズマ処理装置 |
JP7233339B2 (ja) | 2018-08-30 | 2023-03-06 | 芝浦メカトロニクス株式会社 | プラズマ処理装置 |
CN111081600B (zh) * | 2018-10-19 | 2023-08-08 | Asm Ip私人控股有限公司 | 基板处理装置及基板处理方法 |
CN111081600A (zh) * | 2018-10-19 | 2020-04-28 | Asm Ip私人控股有限公司 | 基板处理装置及基板处理方法 |
JP2020080359A (ja) * | 2018-11-12 | 2020-05-28 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP7238350B2 (ja) | 2018-11-12 | 2023-03-14 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
KR102478901B1 (ko) * | 2019-09-12 | 2022-12-16 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 기판 처리 방법 및 기록 매체 |
US11530481B2 (en) * | 2019-09-12 | 2022-12-20 | Kokusai Electric Corporation | Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium |
KR20210031601A (ko) * | 2019-09-12 | 2021-03-22 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체 |
JP2021044419A (ja) * | 2019-09-12 | 2021-03-18 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及び記録媒体 |
JP2021052154A (ja) * | 2019-09-26 | 2021-04-01 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
JP7102478B2 (ja) | 2020-09-24 | 2022-07-19 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法、プログラム及び基板処理方法 |
JP2022052933A (ja) * | 2020-09-24 | 2022-04-05 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
Also Published As
Publication number | Publication date |
---|---|
CN101831632A (zh) | 2010-09-15 |
KR20100103416A (ko) | 2010-09-27 |
KR101569944B1 (ko) | 2015-11-17 |
US20100229797A1 (en) | 2010-09-16 |
TWI494464B (zh) | 2015-08-01 |
TW201102456A (en) | 2011-01-16 |
JP5141607B2 (ja) | 2013-02-13 |
CN101831632B (zh) | 2013-05-22 |
US9093490B2 (en) | 2015-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5141607B2 (ja) | 成膜装置 | |
JP5093162B2 (ja) | 成膜装置、成膜方法及び記憶媒体 | |
JP5181100B2 (ja) | 基板処理装置、基板処理方法及び記憶媒体 | |
JP5062143B2 (ja) | 成膜装置 | |
JP5310283B2 (ja) | 成膜方法、成膜装置、基板処理装置及び記憶媒体 | |
JP5253932B2 (ja) | 成膜装置、基板処理装置、成膜方法及び記憶媒体 | |
JP5375853B2 (ja) | 成膜装置、成膜方法及び記憶媒体 | |
KR101576302B1 (ko) | 성막 장치, 성막 방법 및 컴퓨터 판독 가능 기억 매체 | |
JP5287592B2 (ja) | 成膜装置 | |
JP5195676B2 (ja) | 成膜装置、基板処理装置、成膜方法及び記憶媒体 | |
JP5253933B2 (ja) | 成膜装置、基板処理装置、成膜方法及び記憶媒体 | |
JP5553588B2 (ja) | 成膜装置 | |
JP5195175B2 (ja) | 成膜装置、成膜方法及び記憶媒体 | |
JP5195174B2 (ja) | 成膜装置及び成膜方法 | |
JP5262452B2 (ja) | 成膜装置及び基板処理装置 | |
KR101373946B1 (ko) | 성막 장치 | |
JP5093078B2 (ja) | 成膜装置 | |
JP2010126797A (ja) | 成膜装置、半導体製造装置、これらに用いられるサセプタ、プログラム、およびコンピュータ可読記憶媒体 | |
JP2010114392A (ja) | ガスインジェクター及び成膜装置 | |
JP2010135420A (ja) | 成膜装置 | |
JP5447632B2 (ja) | 基板処理装置 | |
JP2010129983A (ja) | 成膜装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111027 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111027 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120713 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120724 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120924 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121023 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121105 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151130 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5141607 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |