TWI511223B - 半導體設備 - Google Patents

半導體設備 Download PDF

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Publication number
TWI511223B
TWI511223B TW100119661A TW100119661A TWI511223B TW I511223 B TWI511223 B TW I511223B TW 100119661 A TW100119661 A TW 100119661A TW 100119661 A TW100119661 A TW 100119661A TW I511223 B TWI511223 B TW I511223B
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bushing
semiconductor device
reaction chamber
movable platform
frame
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TW100119661A
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TW201250889A (en
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Jui Sheng Cheng
Tsung Hsun Han
Tsan Hua Huang
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Hermes Epitek Corp
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Priority to TW100119661A priority Critical patent/TWI511223B/zh
Priority to US13/474,017 priority patent/US9269547B2/en
Publication of TW201250889A publication Critical patent/TW201250889A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3288—Maintenance
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
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  • Chemical Vapour Deposition (AREA)

Description

半導體設備
本發明係有關於一種半導體設備，特別是有關於一種具有清潔功能的半導體設備。
半導體設備普遍應用於半導體元件之生產，半導體設備通常具有一反應室，半導體製程所需之反應氣體可藉由反應室之氣體噴頭流入反應室內部。經過數次半導體製程後，粉塵或污染物可能累積於反應室內部而影響製程結果及製程良率。
累積於反應室內部之粉塵或污染物可藉由人工打開反應室進行清除。然而，藉由人工打開反應室進行粉塵或污染物之清除通常會造成維修時間過長、製程良率不穩定等不良結果。
鑑於上述先前技術所存在的缺點，有必要提出一種具有清潔功能的半導體設備，反應室內部之粉塵可適時清除，避免過度累積。
本發明欲解決的問題為提供一種具有清潔功能的半導體設備，反應室內部之粉塵可適時清除，避免過度累積。
為解決上述的問題，本發明提出一種半導體設備，該半導體設備包含一反應室、一晶圓承座以及一襯套裝置。反應室具有一開口與一環狀內壁；晶圓承座可承載至少一晶圓；襯套裝置設置於晶圓承座與反應室之環狀內壁之間，襯套裝置可於一第一位置與一第二位置之間垂直移動，該襯套裝置具有至少一排氣口，該排氣口連通至一抽氣裝置，其中，累積於該襯套裝置內之粉塵可藉由該抽氣裝置移除。
本發明之半導體設備可適時藉由抽氣裝置清除累積於襯套裝置內之粉塵。由於本發明之半導體設備不需打開反應室，即可藉由抽氣裝置移除累積於該襯套裝置內之粉塵，因此，可有效避免粉塵過度累積，降低半導體設備之維修時間，增進製程良率。
200‧‧‧半導體設備
210‧‧‧反應室
211‧‧‧開口
212‧‧‧環狀內壁
220‧‧‧晶圓承座
230‧‧‧襯套裝置
231‧‧‧排氣口
232‧‧‧環狀凹槽
233‧‧‧內襯套
234‧‧‧外襯套
240‧‧‧抽氣裝置
250‧‧‧氣體噴頭
260‧‧‧可動平台
261‧‧‧管路
262‧‧‧冷卻管路
270‧‧‧動力裝置
271‧‧‧可伸縮部件
281‧‧‧第一框架
282‧‧‧第二框架
283‧‧‧支撐柱
291‧‧‧第三框架
292‧‧‧伸縮導管
第一圖顯示本發明一較佳實施例之半導體設備之示意圖。
第二圖顯示第一圖中，反應室之俯視剖面示意圖。
第三圖顯示第一圖中，半導體設備之一使用範例之示意圖。
本發明的一些實施例將詳細描述如下。然而，除了如下描述外，本發明還可以廣泛地在其他的實施例施行，且本發明的範 圍並不受實施例之限定，其以之後的專利範圍為準。再者，為提供更清楚的描述及更易理解本發明，圖式內各部分並沒有依照其相對尺寸繪圖，某些尺寸與其他相關尺度相比已經被誇張；不相關之細節部分也未完全繪出，以求圖式的簡潔。
第一圖顯示本發明一較佳實施例之半導體設備200之示意圖。該半導體設備200包含一反應室210、一晶圓承座220、一氣體噴頭(showerhead)250以及一襯套裝置230。
晶圓承座220設置於反應室210內部，而且晶圓承座220可承載至少一晶圓；氣體噴頭250可設置於晶圓承座220之上方，半導體製程所需之反應氣體可藉由氣體噴頭250流入反應室210內部；本實施例中，反應室210具有一開口211與一環狀內壁212，晶圓可通過反應室210之開口211傳送至晶圓承座220，而且環狀內壁212可使半導體製程所需之反應氣體穩定流動，並且均勻分佈於反應室210內部。
第二圖顯示第一圖中，反應室210之俯視剖面示意圖。其中，第一圖是第二圖中A-A’割面線之剖面圖，請參考第一圖與第二圖，襯套裝置230設置於晶圓承座220與反應室210之環狀內壁212之間，襯套裝置230具有至少一排氣口231，該排氣口231連通至一抽氣裝置240，其中，位於襯套裝置230內之粉塵可藉由該抽氣裝置240移除。
本實施例中，該襯套裝置230具有一環狀凹槽232，環狀凹槽232低於晶圓承座220，粉塵可累積於該環狀凹槽232，而不會 影響晶圓。排氣口231設置於該環狀凹槽232，累積於環狀凹槽232內之粉塵可藉由該抽氣裝置240移除。
本實施例中，半導體設備200可進一步包含一可動平台260、一第一框架281、一第二框架282、至少一支撐柱283以及一動力裝置270。
根據本實施例，反應室210固定於第一框架281，支撐柱283固定於第二框架282，支撐柱283之一端固定於可動平台260，動力裝置270設置於第二框架282，動力裝置270之一可伸縮部件271連接至第一框架281。藉由上述設計，動力裝置270可使得可動平台260垂直移動。本實施例中，動力裝置270係一電動缸，但並不以此為限，動力裝置270也可以是一氣壓缸、一油壓缸或其他直線動力裝置。另外，半導體設備200可進一步包含一第三框架291與一伸縮導管292，晶圓承座220設置於第三框架291，當第三框架291垂直運動時，晶圓承座220亦進行垂直運動。伸縮導管292設置於第三框架291與第一框架281之間，伸縮導管292可避免反應室210內部的氣體洩漏至外界。
根據本實施例，襯套裝置230設置於可動平台260上，可動平台包含至少一管路261，粉塵可通過該管路261移動至抽氣裝置240。另外，本實施例中，管路261具有一適當長度，藉以避免管路261之出口距離反應室210太近，造成粉塵再度污染反應室210。
根據本實施例，可動平台260可進一步包含至少一冷卻管路262，冷卻液可通過該冷卻管路262，藉以控制可動平台260之溫度。本實施例中，冷卻管路262設置於支撐柱283之內部，藉以節省 空間，但並不以此為限。冷卻管路262也可以不設置，或者設置於其他適當位置。
第三圖顯示第一圖中，半導體設備200之一使用範例之示意圖。請參考第一圖與第三圖，襯套裝置230可於一第一位置與一第二位置之間垂直移動，如第一圖所示，當襯套裝置230垂直移動至第二位置時，晶圓可通過反應室210之開口211傳送至晶圓承座220；如第三圖所示，當襯套裝置230垂直移動至第一位置時，襯套裝置230可封閉反應室210之開口211，藉以避免開口211影響反應室210內部之氣體之流動。本實施例中，襯套裝置230形成半導體製程所需之反應氣體之流動空間，而且襯套裝置230接觸氣體噴頭250，但並不以此為限。襯套裝置230也可以不接觸氣體噴頭250。
請參考第二圖與第三圖，根據本實施例，襯套裝置230包含一內襯套233與一外襯套234，當襯套裝置230垂直移動至第一位置時，內襯套233環繞晶圓承座220，並且形成半導體製程所需之反應氣體之流動空間，而且內襯套233接觸氣體噴頭250；此時，外襯套234可封閉反應室210之開口211，藉以避免開口211影響半導體製程所需之反應氣體之流動。由於內襯套233環繞晶圓承座220，並且形成半導體製程所需之反應氣體之流動空間，因此，粉塵將會集中於內襯套233內，進行維修保養時，僅需取下內襯套233，進行內襯套233之清潔保養，並不一定要同時取下外襯套234，進行外襯套234之清潔保養。
本發明之半導體設備可適時藉由抽氣裝置清除累積於襯套裝置內之粉塵。由於本發明之半導體設備不需打開反應室，即可 藉由抽氣裝置移除累積於該襯套裝置內之粉塵，因此，可有效避免粉塵過度累積，降低半導體設備之維修時間，增進製程良率。
上述本發明之實施例僅係為說明本發明之技術思想及特點，其目的在使熟悉此技藝之人士能了解本發明之內容並據以實施，當不能以之限定本發明之專利範圍，即凡其它未脫離本發明所揭示之精神所完成之等效的各種改變或修飾都涵蓋在本發明所揭露的範圍內，均應包含在下述之申請專利範圍內。
200‧‧‧半導體設備
210‧‧‧反應室
211‧‧‧開口
212‧‧‧環狀內壁
220‧‧‧晶圓承座
230‧‧‧襯套裝置
231‧‧‧排氣口
232‧‧‧環狀凹槽
233‧‧‧內襯套
234‧‧‧外襯套
240‧‧‧抽氣裝置
250‧‧‧氣體噴頭
260‧‧‧可動平台
261‧‧‧管路
262‧‧‧冷卻管路
270‧‧‧動力裝置
271‧‧‧可伸縮部件
281‧‧‧第一框架
282‧‧‧第二框架
283‧‧‧支撐柱
291‧‧‧第三框架
292‧‧‧伸縮導管

Claims (10)

  1. 一種半導體設備，包含：一反應室，該反應室具有一開口與一環狀內壁；一晶圓承座，該晶圓承座可承載至少一晶圓；以及一襯套裝置，該襯套裝置設置於該晶圓承座與該反應室之該環狀內壁之間，該襯套裝置可於一第一位置與一第二位置之間垂直移動，該襯套裝置具有至少一排氣口，該排氣口連通至一抽氣裝置，其中，位於該襯套裝置內之至少一粉塵可藉由該抽氣裝置移除，並且其中，該襯套裝置具有一環狀凹槽，該排氣口設置於該環狀凹槽，位於該環狀凹槽內之該粉塵藉由該抽氣裝置移除。
  2. 如申請專利範圍第1項所述之半導體設備，其中，該襯套裝置垂直移動至該第一位置時，該襯套裝置可封閉該反應室之該開口。
  3. 如申請專利範圍第1項所述之半導體設備，更包含一氣體噴頭(showerhead)，該氣體噴頭設置於該晶圓承座之上方，該襯套裝置垂直移動至該第一位置時，該襯套裝置接觸該氣體噴頭。
  4. 如申請專利範圍第1項所述之半導體設備，其中，該襯套裝置包含一內襯套與一外襯套，該內襯裝置垂直移動至該第一位置時，該內襯套環繞該晶圓承座，該外襯套可封閉該反應室之該開口。
  5. 如申請專利範圍第1項所述之半導體設備，更包含一可動平台，其中，該襯套裝置設置於該可動平台上。
  6. 如申請專利範圍第5項所述之半導體設備，其中，該可動平台包含至少一管路，該粉塵通過該管路移動至該抽氣裝置。
  7. 如申請專利範圍第5項所述之半導體設備，其中，該可動平台包含至少一冷卻管路，冷卻液通過該冷卻管路，藉以控制該可動平台之溫度。
  8. 如申請專利範圍第5項所述之半導體設備，更包含一動力裝置，該動力裝置可使該可動平台垂直移動。
  9. 如申請專利範圍第8項所述之半導體設備，其中，該動力裝置包含一氣壓缸、一油壓缸或一電動缸。
  10. 如申請專利範圍第8項所述之半導體設備，更包含一第一框架、一第二框架以及至少一支撐柱，其中，該反應室固定於該第一框架，該支撐柱固定於該第二框架，該支撐柱之一端固定於該可動平台，該動力裝置設置於該第二框架，該動力裝置之一可伸縮部件連接至該第一框架。
TW100119661A 2011-06-03 2011-06-03 半導體設備 TWI511223B (zh)

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