WO2022205495A1 - 晶圆电极的清洁装置 - Google Patents

晶圆电极的清洁装置 Download PDF

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Publication number
WO2022205495A1
WO2022205495A1 PCT/CN2021/086370 CN2021086370W WO2022205495A1 WO 2022205495 A1 WO2022205495 A1 WO 2022205495A1 CN 2021086370 W CN2021086370 W CN 2021086370W WO 2022205495 A1 WO2022205495 A1 WO 2022205495A1
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Prior art keywords
confluence
inlet
cleaning
support table
cavity
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PCT/CN2021/086370
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English (en)
French (fr)
Inventor
施杰
孙闻彤
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台湾积体电路制造股份有限公司
台积电(中国)有限公司
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Publication of WO2022205495A1 publication Critical patent/WO2022205495A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

Definitions

  • the present application relates to the technical field of plasma etching equipment, and in particular, to a cleaning device for wafer electrodes.
  • the etching equipment includes an upper electrode, a lower electrode disposed opposite to the upper electrode, a cooling plate, a power supply, and the like.
  • the etching equipment includes an upper electrode, a lower electrode disposed opposite to the upper electrode, a cooling plate, a power supply, and the like.
  • a high-voltage electric field is formed between the upper electrode and the lower electrode part, and the driving plasma bombards the wafer located on the lower electrode, so as to achieve the purpose of etching.
  • the wafer etching process needs to be in a clean environment, so the wafer electrodes need to be cleaned intermittently, and the traditional cleaning method is often manual operation, which wastes manpower and makes it difficult to ensure the cleanliness of the wafer electrodes.
  • the purpose of the embodiments of the present application is to provide a cleaning device for wafer electrodes, which can automatically clean the wafer electrodes and improve the cleaning effect of the wafer electrodes.
  • an embodiment of the present application provides a wafer electrode cleaning device, which includes a confluence housing, a cover and a fluid delivery assembly.
  • the confluence shell is a hollow structure, including a support table, a confluence cavity and a discharge port.
  • the confluence cavity is located between the support table and the discharge port, and the direction of the confluence cavity from the support table to the discharge port is tapered.
  • the cover is a hollow structure, including an inlet, a diffusion cavity and a connecting portion.
  • the cover is connected to the support table through the connecting portion.
  • the diffusion cavity is located between the inlet and the connecting portion. The direction of the diffusion cavity from the inlet to the connecting portion increases gradually. big trend.
  • the fluid conveying assembly supplies cleaning medium to the confluence housing through the cover, the fluid conveying assembly is connected to the inlet, and the cleaning medium is expanded and sprayed through the diffusion chamber to the wafer electrodes to be cleaned on the support table.
  • the support table is disposed on the inner wall of the confluence cavity and extends toward the center of the confluence cavity, the contact surface between the support table and the wafer electrode is the first surface, and the orthographic projection of the support table on the first surface is ring structure.
  • the maximum cross-sectional dimension of the confluence cavity is smaller than that of the diffusion cavity, and the support table is disposed on the outer wall of the confluence cavity and extends away from the confluence cavity.
  • the cleaning device further includes a support member, the support member is disposed outside the confluence chamber and is fixedly connected to the support table.
  • the size of the discharge port is larger than the size of the inlet port, so that the flow rate of the cleaning medium at the discharge port is not less than the flow rate of the cleaning medium at the inlet port.
  • the diffusion cavity is of a pyramid structure, and the centerline of the inlet is coincident with the axis of the diffusion cavity, so that the cleaning medium is uniformly sprayed on the surface of the wafer electrode.
  • a sealing ring is provided at the connection between the connecting portion and the support table.
  • the fluid delivery assembly includes a fluid driving member, a first pipeline and a second pipeline, one end of the first pipeline is connected to the fluid driving member, the other end is connected to the inlet, and the second pipeline is connected to the discharge port,
  • the cleaning medium enters the diffusion chamber through the fluid driving element and the first pipeline, and is transported to the outside through the confluence chamber and the second pipeline.
  • the first pipeline is provided with a filter for separating impurities in the cleaning medium.
  • the first pipeline is provided with a control valve for controlling the flow rate of the cleaning medium.
  • a wafer electrode cleaning device includes a confluence housing, a cover and a fluid conveying assembly, the confluence housing and the cover are fixed into one body, and the wafer electrodes are placed on a support table of the confluence housing , the fluid delivery assembly supplies the cleaning medium to the manifold housing via the cover closure. Since the direction of the diffusion cavity from the inlet to the connection portion is gradually increasing, and the direction of the confluence cavity from the support table to the discharge port is gradually decreasing, the cleaning medium will first expand and diffuse when entering the diffusion cavity, and then spray evenly on the The surface of the wafer electrode passes through the wafer electrode and converges in the bus chamber, and finally leaves the cleaning device through the discharge port.
  • the cleaning device of the present application replaces the traditional manual cleaning method, and ensures the cleaning effect while saving manpower.
  • FIG. 1 is a schematic structural diagram of a device for cleaning wafer electrodes provided by an embodiment of the present application
  • Figure 2 is a top view of the cleaning device shown in Figure 1;
  • FIG 3 is another schematic structural diagram of the cleaning device provided by the embodiment of the present application.
  • Fig. 5 is a partial enlarged view of the structure shown in Fig. 1;
  • FIG. 6 is another schematic structural diagram of the cleaning device provided by the embodiment of the present application.
  • Convergence housing 11. Support table; 111, First surface; 112, Ring structure; 1121, Outer ring; 1122, Inner ring;
  • Fluid conveying assembly 31. Fluid driving part; 32, First pipeline; 33, Second pipeline; 34, Filter; 35, Control valve
  • the traditional wafer electrode cleaning method usually first wipes the wafer electrode with a damp cloth, and then uses IPA (Isopropyl alcohol) to clean the wafer electrode, that is, the principle of isopropyl alcohol and water co-dissolving is used to remove the water on the surface of the wafer electrode.
  • IPA isopropyl alcohol
  • the gas spray gun sprays compressed gas on the wafer electrodes to achieve a cleaning effect.
  • This cleaning method requires manual operation, which is time-consuming and labor-intensive, and cannot guarantee the cleaning effect of the wafer electrodes.
  • FIG. 1 is a schematic structural diagram of a wafer electrode cleaning device provided by an embodiment of the present application.
  • An embodiment of the present application provides a wafer electrode cleaning device, including a confluence housing 1, a cover and a cover 2 and fluid delivery assembly 3.
  • the confluence housing 1 is a hollow structure, including a support table 11 , a confluence cavity 12 and a discharge port 13 .
  • the confluence cavity 12 is located between the support base 11 and the discharge port 13 , and the confluence cavity 12 extends from the support base 11 to the discharge port 13 . shrinking trend.
  • the wafer electrode 4 is placed on the support table 11, and the fluid delivery assembly 3 can provide the cleaning medium 5 for cleaning the wafer electrode 4. Since the wafer electrode 4 itself has a plurality of through holes 41, the cleaning medium 5 will pass through the wafer electrode 4 Enter into the manifold cavity 12 of the manifold housing 1 . The cleaning medium 5 entering the confluence cavity 12 moves downward along the inner wall of the confluence cavity 12.
  • the confluence housing 1 plays the role of supporting the wafer electrodes 4 and the confluence conveying the cleaning medium 5 at the same time.
  • the confluence cavity 12 itself may have a pyramid structure or a stepped structure, which is not limited in this application.
  • the cover 2 is a hollow structure, including an inlet 21, a diffusion cavity 22 and a connecting portion 23.
  • the cover 2 is connected to the support table 11 through the connecting portion 23, and the diffusion cavity 22 is located between the inlet 21 and the connecting portion 23.
  • the diffusion cavity The direction of 22 from the inlet 21 to the connecting portion 23 is gradually increasing.
  • the existence of the cover 2 avoids the phenomenon that the cleaning medium 5 is sprayed into the area outside the wafer electrode 4 due to operational errors, wherein the connection part 23 and the inlet 21 of the cover 2 are located at the two ends of the diffusion chamber 22 respectively,
  • the support table 11 and the discharge port 13 are located at the two ends of the confluence chamber 12 respectively.
  • the support table 11 is not only used to place the wafer electrodes 4, but also used to connect the cover 2.
  • connection between the connection part 23 and the support table 11 includes: It is not limited to bolt connection and snap connection, as long as the detachable connection between the cover cover 2 and the manifold housing 1 is satisfied.
  • the connecting portion 23 is connected with the support table 11 so that the cover 2 and the manifold casing 1 are combined to form a complete casing, and the diffusion chamber 22 communicates with the manifold chamber 12 .
  • the cleaning medium 5 first enters into the diffusion chamber 22 through the inlet 21. Since the cross-sectional size of the diffusion chamber 22 gradually increases in the direction from the inlet 21 to the connecting portion 23, the cleaning medium 5 sprayed from the inlet 21 Under the influence of pressure and the like, it will expand and spread and spray on the surface of the wafer electrode 4 . Through this design, the spraying area of the cleaning medium 5 on the wafer electrode 4 can be enlarged, and the cleaning effect of the wafer electrode 4 can be improved.
  • the fluid conveying assembly 3 supplies the cleaning medium 5 to the confluence housing 1 through the cover 2 , the fluid conveying assembly 3 is connected to the inlet 21 , and the cleaning medium 5 is expanded and sprayed to the wafer to be cleaned on the support table 11 through the diffusion chamber 22 electrode 4.
  • the fluid delivery assembly 3 is responsible for supplying the cleaning medium 5, and the cleaning medium 5 may be in a gaseous structure or a liquid structure.
  • the cleaning medium 5 may be water or IPA, etc.
  • the cleaning medium 5 cleans the wafer electrode 4 and removes impurities on the surface of the wafer electrode 4 .
  • the cleaning medium 5 can be CDA (Compressed Dry Air), that is, compressed dry air. At this time, the cleaning medium 5 is sprayed on the surface of the wafer electrode 4 through the inlet 21 to dry the wafer electrode 4
  • CDA Compressed Dry Air
  • both the cover 2 and the bus housing 1 are transparent structures.
  • the relevant personnel first place the wafer electrode 4 on the support table 11 of the bus housing 1 , and then fix the cover 2 and the bus housing 1 by means of bolts, etc., and the fluid conveying component 3 supplies the cleaning medium 5 .
  • the cover 2 and the bus housing 1 are both transparent structures, the relevant personnel can clearly see the flow trajectory of the cleaning medium 5 and the cleaning state of the surface of the wafer electrode 4 .
  • the cover 2 is manually removed, and the wafer electrode 4 located on the support table 11 is turned over, and then the cover 2 is fixed with the bus housing 1, so that the wafer Both sides of the electrode 4 are cleaned.
  • the shape of the outer shell of the cover 2 and the collector shell 1 can be a columnar structure or a polygonal structure.
  • the outlets 13 are located at the tops of the cones of the cover 2 and the manifold housing 1 respectively. This design reduces material usage and facilitates manual disassembly and retrieval.
  • a wafer electrode cleaning device includes a confluence housing 1 , a cover 2 and a fluid conveying assembly 3 .
  • the confluence housing 1 and the cover 2 are fixed into one body, and the wafer electrodes 4 are placed on the confluence.
  • the fluid delivery assembly 3 supplies the cleaning medium 5 to the manifold housing 1 via the cover 2 . Since the direction of the diffusion chamber 22 from the inlet 21 to the connection portion 23 is gradually increasing, and the direction of the confluence chamber 12 from the support table 11 to the discharge port 13 is gradually decreasing, the cleaning medium 5 will first enter the diffusion chamber 22 .
  • the cleaning device of the present application replaces the traditional manual cleaning method, and ensures the cleaning effect while saving manpower.
  • the support table 11 is disposed on the inner wall of the confluence cavity 12 and extends toward the center of the confluence cavity 12 , and the contact surface between the support table 11 and the wafer electrode 4 is the first surface 111 , the orthographic projection of the support table 11 on the first surface 111 is an annular structure 112 .
  • the support table 11 is arranged inside the confluence chamber 12 , and a channel for the cleaning medium 5 to pass through is arranged at the central position of the support table 11 .
  • the size of the orthographic projection ring structure 112 of the support table 11 on the first surface 111 in this embodiment is the size of the support table 11 . Determined by wafer electrode 4 .
  • the size of the outer ring 1121 of the ring structure 112 is larger than the cross-sectional size of the wafer electrode 4
  • the size of the inner ring 1122 of the ring structure 112 is smaller than the cross-sectional size of the wafer electrode 4
  • the plurality of through holes on the wafer electrode 4 The orthographic projections of 41 on the first surface 111 are all located in the inner ring of the annular structure. This design enables the wafer electrode 4 to be stably placed on the support table 11 and avoids accumulation of the cleaning medium 5 in the diffusion chamber 22 .
  • a side of the support table 11 away from the bus chamber 12 may also be provided with a positioning member 14 , and there are more than two positioning members 14 located on the outer peripheral side of the wafer electrode 4 for limiting The movement of the wafer electrode 4 avoids uneven spraying caused by displacement of the wafer electrode 4 during the cleaning process.
  • the maximum cross-sectional dimension of the confluence cavity 12 is smaller than the maximum cross-sectional dimension of the diffusion cavity 22 , and the support table 11 is disposed on the outer wall of the confluence cavity 12 and faces away from the confluence The direction of the cavity 12 extends.
  • the maximum cross-sectional size of the diffusion cavity 22 is larger than the cross-sectional size of the wafer electrode 4, so that the diffusion cavity 22 can completely cover the wafer electrode 4; and the maximum cross-sectional size of the confluence cavity 12 is smaller than the cross-sectional size of the wafer electrode 4, so that the wafer electrode 4 can be placed on the support table 11 .
  • the cleaning device may further include a support member 6 , and the support member 6 is disposed on the outer side of the confluence chamber 12 and is fixedly connected to the support table 11 .
  • the support member 6 plays a supporting role for the entire cleaning device.
  • the support member 6 is provided with a plurality of and installed around the outside of the confluence chamber 12. One side of the support table 11 is connected with the connecting portion 23, and the other side is fixed with the support member 6.
  • the present application does not limit the structure and quantity of the support members 6, as long as the support members 6 can meet the support requirements of the cleaning device.
  • the size of the outlet 13 is larger than the size of the inlet 21 , so that the flow rate of the cleaning medium 5 at the outlet 13 is not less than the flow rate of the cleaning medium at the inlet 21 .
  • the cleaning medium 5 enters the diffusion chamber 22 through the inlet 21 and leaves the confluence chamber 12 through the outlet 13 .
  • the discharge flow rate of the cleaning medium 5 is not less than the inlet flow rate.
  • the design that the size of the discharge port 13 is larger than the size of the inlet port 21 can increase the discharge flow rate of the cleaning medium 5 .
  • the tapering trend of the confluence cavity 12 is greater than the increasing trend of the diffusion cavity 22, that is, the inclination angle of the inner wall of the confluence cavity 12 is greater than the inclination angle of the inner wall of the diffusion cavity 22, thereby increasing the moving speed of the cleaning medium 5 in the confluence cavity 12, Avoid accumulation of cleaning media 5, which will affect the internal pressure of the cleaning device.
  • the diffusion cavity 22 is a cone structure, and the centerline of the inlet 21 is coincident with the axis of the diffusion cavity 22 , so that the cleaning medium 5 can be sprayed evenly on the surface of the wafer electrode 4 . Since the diffusion cavity 22 has a pyramid structure, the cleaning medium 5 is sprayed on the surface of the wafer electrode 4 in an umbrella-shaped structure in the diffusion cavity 22 .
  • the center line of the inlet 21 coincides with the center of the wafer electrode 4 , in other words, the inlet 21 is on the first surface
  • the center point of the orthographic projection on 111 coincides with the center point of the orthographic cephalogram of the wafer electrode 4 on the first surface 111 .
  • a sealing ring 7 is provided at the connection between the connecting portion 23 and the support table 11 , and the sealing ring 7 is provided at the connection between the confluence housing 1 and the cover 2 to enhance sealing. effect. Since wafer production needs to ensure a strict particle environment, otherwise the produced wafers will have defects, and the wafer electrode 4 is an important part in the wafer production process, so it is necessary to avoid excessive particle impurities on the wafer electrode 4, The arrangement of the sealing ring 7 is used to separate the cleaning device from the outside air, so as to ensure that the wafer electrode 4 is in a relatively airtight environment, thereby improving the reliability of the device.
  • the fluid delivery assembly 3 includes a fluid driving member 31 , a first pipe 32 and a second pipe 33 , one end of the first pipe 32 is connected with the fluid driving member 31 , and the other end is connected with the inlet 21 , the second pipe 33 communicates with the discharge port 13 , the cleaning medium 5 enters the diffusion chamber 22 through the fluid driving element 31 and the first pipe 32 , and is transported to the outside through the confluence chamber 12 and the second pipe 33 .
  • the fluid driving member 31 is used to provide the cleaning medium 5 to the cleaning device. According to the different components of the cleaning medium 5 in actual situations, the fluid driving member 31 may adopt different devices. For example, when the cleaning medium 5 is a liquid fluid, the fluid driving member 31 may be a suction pump; when the cleaning medium 5 is a gaseous fluid, the fluid driving member 31 may be a high-pressure air pump.
  • the first pipe 32 is used to communicate the fluid driving member 31 and the diffusion chamber 22 and move the cleaning medium 5 from the fluid driving member 31 to the diffusion chamber 22 , and the second pipe 33 communicates the confluence chamber 12 with the outside.
  • the second pipeline 33 may be connected to a fluid recovery device, which is not shown in the figure, so as to recover and reuse the cleaning medium 5 .
  • a filter 34 is provided on the first pipe 32 for separating impurities in the cleaning medium 5 .
  • the filter 34 performs a preliminary filtering process on the cleaning medium 5 supplied by the fluid driving element 31, so that the cleaning medium 5 entering the diffusion chamber 22 meets the requirements of a clean environment.
  • a filter 34 may also be provided on the second pipeline 33 to filter the used cleaning medium 5 again to facilitate subsequent recycling.
  • a control valve 35 is provided on the first pipeline to control the flow of the cleaning medium 5 to ensure that the flow of the cleaning medium 5 can be completely sprayed on the surface of the wafer electrode 4 and will not be in the confluence chamber 12 . accumulation occurs inside.
  • the present application does not limit the specific positions of the control valve 35 and the filter 34 on the first pipeline 32 .
  • the embodiment of the present application provides a cleaning device for wafer electrodes, which does not require manual cleaning.
  • the cleaning device includes a confluence housing, a cover and a fluid conveying assembly.
  • the confluence housing and the cover are fixed into one body, and the crystal
  • the round electrodes are placed on the support table of the manifold housing, and the fluid delivery assembly supplies the manifold housing with cleaning medium via the cover. Since the direction of the diffusion cavity from the inlet to the connection portion is gradually increasing, the cleaning medium will first expand and diffuse when entering the diffusion cavity, and then spray evenly on the surface of the wafer electrode, which improves the spraying effect of the wafer electrode.
  • the center line of the inlet of the cover and the axis of the diffusion cavity are coincident. Compared with the traditional cleaning method, the uniformity of the cleaning medium sprayed on the surface of the wafer electrode is improved, and the edge position of the wafer electrode surface cannot be obtained. The problem of cleaning, which in turn enhances the cleaning effect.

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Abstract

本申请提供了一种晶圆电极的清洁装置，包括汇流壳体、盖合罩以及流体输送组件。汇流壳体为中空结构，包括有支撑台、汇流腔和排出口，汇流腔位于支撑台与排出口之间，汇流腔由支撑台至排出口的方向呈渐缩趋势。盖合罩为中空结构，包括有进口、扩散腔和连接部，盖合罩通过连接部连接于支撑台，扩散腔位于进口与连接部之间，扩散腔由进口至连接部的方向呈逐渐增大的趋势。流体输送组件经由盖合罩向汇流壳体供应清洁介质，流体输送组件与进口连接设置，清洁介质经由扩散腔膨化喷淋至支撑台上待清洁的晶圆电极。本申请的清洁装置替代了传统人工清洁方法，在节约人力的同时保证了清洁效果。

Description

晶圆电极的清洁装置
相关申请的交叉引用
本申请要求享有于2021年4月1日提交的名称为“晶圆电极的清洁装置”的中国专利申请202120671706.6的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本申请涉及晶电浆刻蚀设备技术领域，尤其涉及晶圆电极的清洁装置。
背景技术
传统的晶圆刻蚀设备通常配合电极一起使用，刻蚀设备包括有上电极、与上电极相对设置的下电极、冷却板、电源等等。使用过程中上电极与下电极部之间形成高压电场，驱动电浆对位于下电极上的晶元进行轰击，以达到蚀刻的目的。
晶圆刻蚀过程需要处于一个清洁度较高的环境，因此需要间歇性地对晶圆电极进行清洁，而传统的清洁方式往往为人工操作，浪费人力并且很难保证晶圆电极的清洁程度。
发明内容
本申请实施例的目的是提供一种晶圆电极的清洁装置，该清洁装置能够对晶圆电极实现自动清洁，并且提高晶圆电极的清洁效果。
为此，本申请实施例提供了一种晶圆电极的清洁装置，包括汇流壳体、盖合罩以及流体输送组件。汇流壳体为中空结构，包括有支撑台、汇流腔和排出口，汇流腔位于支撑台与排出口之间，汇流腔由支撑台至排出口的方向呈渐缩趋势。
盖合罩为中空结构，包括有进口、扩散腔和连接部，盖合罩通过连接 部连接于支撑台，扩散腔位于进口与连接部之间，扩散腔由进口至连接部的方向呈逐渐增大的趋势。
流体输送组件经由盖合罩向汇流壳体供应清洁介质，流体输送组件与进口连接设置，清洁介质经由扩散腔膨化喷淋至支撑台上待清洁的晶圆电极。
根据本申请实施例的一个方面，支撑台设置于汇流腔内壁上并向汇流腔中心位置方向延伸，支撑台与晶圆电极的接触面为第一表面，支撑台在第一表面的正投影为环形结构。
根据本申请实施例的一个方面，沿进口至排出口的方向，汇流腔的最大截面尺寸小于扩散腔的最大截面尺寸，支撑台设置于汇流腔外壁上并沿背离汇流腔方向延伸。
根据本申请实施例的一个方面，清洁装置还包括支撑件，支撑件设置于汇流腔的外侧，并与支撑台固定连接。
根据本申请实施例的一个方面，排出口尺寸大于进口尺寸，以使清洁介质在排出口的流速不小于清洁介质在进口处的流速。
根据本申请实施例的一个方面，扩散腔为锥体结构，进口的中心线与扩散腔的轴线重合，以使清洁介质均匀喷淋在晶圆电极的表面。
根据本申请实施例的一个方面，连接部与支撑台连接处设置有密封圈。
根据本申请实施例的一个方面，流体输送组件包括流体驱动件、第一管道和第二管道，第一管道的一端与流体驱动件相连，另一端与进口连通，第二管道与排出口连通，清洁介质通过流体驱动件及第一管道进入至扩散腔，并通过汇流腔及第二管道输送至外界。
根据本申请实施例的一个方面，第一管道设置有过滤器，用于分离清洁介质内的杂质。
根据本申请实施例的一个方面，第一管道设置有控制阀，用于控制清洁介质的流量。
本申请实施例的一种晶圆电极的清洁装置，包括汇流壳体、盖合罩以及流体输送组件，汇流壳体与盖合罩固定成一体，晶圆电极放置在汇流壳体的支撑台上，流体输送组件经由盖合罩向汇流壳体供应清洁介质。由于 扩散腔由进口至连接部的方向呈逐渐增大的趋势，并且汇流腔由支撑台至排出口的方向呈渐缩趋势，因此清洁介质进入扩散腔时首先会膨化扩散，然后均匀喷淋在晶圆电极表面，并穿过晶圆电极在汇流腔内汇聚，最终通过排出口离开清洁装置。本申请的清洁装置替代了传统人工清洁方法，在节约人力的同时保证了清洁效果。
附图说明
从下面结合附图对本申请的具体实施方式的描述中可以更好地理解本申请，其中，通过阅读以下参照附图对非限制性实施例所作的详细描述，本申请的其它特征、目的和优点将会变得更明显，相同或相似的附图标记表示相同或相似的特征。
图1是本申请实施例提供的晶圆电极的清洁装置的结构示意图；
图2是图1所示的清洁装置的俯视图；
图3是本申请实施例提供的清洁装置的又一种结构示意图；
图4是本申请实施例提供的清洁装置的还一种结构示意图；
图5是图1所示结构的局部放大图；
图6是本申请实施例提供的清洁装置的还一种结构示意图。
附图标记说明：
1、汇流壳体；11、支撑台；111、第一表面；112、环形结构；1121、外圈；1122、内圈；12、汇流腔；13、排出口；14、定位件；
2、盖合罩；21、进口；22、扩散腔；23、连接部；
3、流体输送组件；31、流体驱动件；32、第一管道；33、第二管道；34、过滤器；35、控制阀
4、晶圆电极；41、通孔；
5、清洁介质；
6、支撑件；
7、密封圈。
具体实施方式
下面将详细描述本申请的各个方面的特征和示例性实施例，为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及具体实施例，对本申请进行进一步详细描述。应理解，此处所描述的具体实施例仅意在解释本申请，而不是限定本申请。对于本领域技术人员来说，本申请可以在不需要这些具体细节中的一些细节的情况下实施。下面对实施例的描述仅仅是为了通过示出本申请的示例来提供对本申请更好的理解。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
传统的晶圆电极清洁方法通常先使用湿布擦拭晶圆电极，然后使用IPA(Isopropyl alcohol)清洗晶圆电极，即利用异丙醇和水共溶的原理将晶圆电极表面的水分去除，最后人工通过气体喷枪将压缩气体喷涂在晶圆电极上，实现清洁效果。这种清洁方法需要人工进行手动操作，费时费力，并且无法保证晶圆电极的清洁效果。
请参阅图1，图1为本申请实施例提供的一种晶圆电极的清洁装置的结构示意图，本申请实施例提供了一种晶圆电极的清洁装置，包括汇流壳体1、盖合罩2和流体输送组件3。
汇流壳体1为中空机构，包括有支撑台11、汇流腔12和排出口13，汇流腔12位于支撑台11与排出口13之间，汇流腔12由支撑台11至排出口13的方向呈缩减趋势。晶圆电极4放置在支撑台11上，流体输送组件3可以提供清洁晶圆电极4的清洁介质5，由于晶圆电极4本身具有多个通孔41，因此清洁介质5会穿过晶圆电极4进入至汇流壳体1的汇流腔12内。进入至汇流腔12内的清洁介质5顺着汇流腔12的腔体内壁向下移动，由 于汇流腔12的截面大小在支撑台11至排出口13的方向上逐渐减小，因此一开始进入汇流腔12内的多股清洁介质5最终会汇聚成同一股流体，并通过排出口13离开清洁装置，在这个过程中汇流壳体1同时起到支撑晶圆电极4和汇流输送清洁介质5的作用。可选地，汇流腔12本身可以为锥体结构或阶梯状等结构，本申请对此不作限定。
盖合罩2为中空结构，包括有进口21、扩散腔22和连接部23，盖合罩2通过连接部23连接于支撑台11，扩散腔22位于进口21与连接部23之间，扩散腔22由进口21至连接部23的方向呈逐渐增大的趋势。盖合罩2的存在避免了由于操作失误导致清洁介质5喷射到晶圆电极4之外区域的现象出现，其中，盖合罩2的连接部23与进口21分别位于扩散腔22的两端，支撑台11和排出口13分别位于汇流腔12的两端，支撑台11除了用于放置晶圆电极4外，还用于连接盖合罩2，连接部23与支撑台11的连接方式包括但不限于螺栓连接以及卡合连接，只要满足盖合罩2与汇流壳体1之间可拆卸连接即可。连接部23与支撑台11相连从而使得盖合罩2与汇流壳体1结合形成一个完整壳体，扩散腔22与汇流腔12连通。清洁装置工作时，清洁介质5首先通过进口21进入至扩散腔22内，由于扩散腔22的截面大小在进口21至连接部23方向上逐渐增大，因此从进口21处喷出的清洁介质5会在压强等作用影响下膨化扩散并喷淋在晶圆电极4的表面。通过这种设计可以扩大清洁介质5在晶圆电极4上的喷淋面积，提高晶圆电极4的清洁效果。
流体输送组件3，经由盖合罩2向汇流壳体1供应清洁介质5，流体输送组件3与进口21连接设置，清洁介质5经由扩散腔22膨化喷淋至支撑台11上待清洁的晶圆电极4。流体输送组件3负责供应清洁介质5，清洁介质5可以为气态结构，也可以为液态结构。当清洁介质5为液态结构时，清洁介质5可以为水或者IPA等，清洁介质5对晶圆电极4进行清洗，并将晶圆电极4表面的杂质去除。当清洁介质5为气态结构时，清洁介质5可以为CDA(Compressed Dry Air)，即压缩干燥空气，此时清洁介质5经由进口21喷射在晶圆电极4的表面，对晶圆电极4进行干燥清洁，本申请对清洁介质5的组成成分不作限定。
在一些可选实施例中，盖合罩2与汇流壳体1均为透明结构。使用时，相关人员先将晶圆电极4放置在汇流壳体1的支撑台11上，然后通过螺栓等方式将盖合罩2与汇流壳体1固定，流体输送组件3供应清洁介质5。此时由于盖合罩2与汇流壳体1均为透明结构，因此相关人员可以很清晰地看出清洁介质5的流动轨迹，以及对晶圆电极4表面的清洁状态。晶圆电极4的一面清洁完成后，人工卸下盖合罩2，并将位于支撑台11上的晶圆电极4翻面，然后将盖合罩2与汇流壳体1固定，从而对晶圆电极4的双面均实现清洁。另外对于盖合罩2与汇流壳体1的外壳形状可以为柱状结构或多边体等结构，示例性地，盖合罩2与汇流壳体1的外壳形状均为锥状结构，进口21和排出口13分别位于盖合罩2与汇流壳体1的锥顶位置处。这种设计可以减少材料使用，并且有利于人工拆卸取拿。
本申请实施例的一种晶圆电极的清洁装置，包括汇流壳体1、盖合罩2以及流体输送组件3，汇流壳体1与盖合罩2固定成一体，晶圆电极4放置在汇流壳体1的支撑台11上，流体输送组件3经由盖合罩2向汇流壳体1供应清洁介质5。由于扩散腔22由进口21至连接部23的方向呈逐渐增大的趋势，并且汇流腔12由支撑台11至排出口13的方向呈渐缩趋势，因此清洁介质5进入扩散腔22时首先会膨化扩散，然后均匀喷淋在晶圆电极4表面，并穿过晶圆电极4的通孔41在汇流腔12内汇聚，最终通过排出口13离开清洁装置。本申请的清洁装置替代了传统人工清洁方法，在节约人力的同时保证了清洁效果。
请参阅图1和图2，在一些实施例中，支撑台11设置于汇流腔12内壁上并向汇流腔12中心位置方向延伸，支撑台11与晶圆电极4的接触面为第一表面111，支撑台11在第一表面111的正投影为环形结构112。支撑台11设置于汇流腔12内部，并且在支撑台11中央位置处设置有供清洁介质5通过的通道，本实施例中的支撑台11在第一表面111的正投影环形结构112的尺寸大小由晶圆电极4决定。具体地说，环形结构112的外圈1121尺寸大于晶圆电极4的截面尺寸，而环形结构112的内圈1122尺寸小于晶圆电极4的截面尺寸，另外晶圆电极4上的多个通孔41在第一表面111的正投影均位于环形结构的内圈中。这种设计可以使得晶圆电极4平稳放置 在支撑台11上，并且避免清洁介质5在扩散腔22中堆积。
请参阅图3，在本实施例中，支撑台11背离汇流腔12的一侧还可以设置有定位件14，定位件14设置有两个以上并且位于晶圆电极4的外周侧，用于限制晶圆电极4的移动，避免在清洁过程中，晶圆电极4发生移位造成喷淋不均匀。
请参阅图4，在一些实施例中，沿进口21至排出口13方向，汇流腔12的最大截面尺寸小于扩散腔22的最大截面尺寸，支撑台11设置于汇流腔12外壁上并沿背离汇流腔12的方向延伸。其中，扩散腔22的最大截面尺寸大于晶圆电极4的截面尺寸，以使扩散腔22可以将晶圆电极4完全罩住；而汇流腔12的最大截面尺寸小于晶圆电极4的截面尺寸，以使晶圆电极4可以放置在支撑台11上。
在本实施例中，清洁装置还可以包括支撑件6，支撑件6设置于汇流腔12的外侧并与支撑台11固定连接。支撑件6对整个清洁装置起到支撑作用，支撑件6设置有多个并围绕安装在汇流腔12的外侧，支撑台11的一面与连接部23相连接，另一面与支撑件6相固定，本申请对支撑件6的结构和数量不作限定，只要支撑件6可以满足清洁装置的支撑需要即可。
在一些实施例中，排出口13尺寸大于进口21尺寸，以使清洁介质5在排出口13的流速不小于清洁介质在进口21处的流速。清洁介质5通过进口21进入扩散腔22，通过排出口13离开汇流腔12。为了避免清洁介质5在汇流腔12和扩散腔22内形成堆积，因此需要清洁介质5的排出流速不小于进入流速。而排出口13尺寸大于进口21尺寸的设计可以提高清洁介质5的排出流速。可选地，汇流腔12的渐缩趋势大于扩散腔22的增大趋势，即汇流腔12内壁的倾斜角度大于扩散腔22的内壁倾斜角度，进而增加汇流腔12内清洁介质5的移动速率，避免出现清洁介质5堆积，对清洁装置内部压强产生影响。
在一些实施例中，扩散腔22为锥体结构，进口21的中心线与扩散腔22的轴线重合，以使清洁介质5可以均匀喷淋在晶圆电极4表面。由于扩散腔22为锥体结构，因此清洁介质5在扩散腔22内呈现伞状结构喷淋在晶圆电极4表面上。由于晶圆电极4设置于支撑台11的中央位置，而支撑 台11中心与扩散腔22的轴线向重合，因此进口21的中心线与晶圆电极4中心重合，换言之，进口21在第一表面111上的正投影中心点与晶圆电极4在第一表面111的正头影中心点重合。这种设计可以提高清洁介质5在晶圆电极4表面喷淋的均匀性，避免出现晶圆电极4表面边缘位置处无法得到清洁的问题，进而增强清洁效果。
请参阅图5，在一些实施例中，连接部23与支撑台11的连接处设置有密封圈7，密封圈7设置于汇流壳体1与盖合罩2的连接处，起到增强密封的作用。由于晶圆生产需要保证严格的微粒环境，否则生产出的晶圆会出现缺陷，而晶圆电极4是晶圆生产过程中的重要部件，因此需要避免晶圆电极4上出现过多微粒杂质，密封圈7的设置用于将清洁装置与外部空气间隔开，保证晶圆电极4处于一个相对密闭的环境，从而提高装置可靠性。
请参阅图6，在一些实施例中，流体输送组件3包括流体驱动件31、第一管道32和第二管道33，第一管道32的一端与流体驱动件31相连，另一端与进口21连通，第二管道33与排出口13连通，清洁介质5通过流体驱动件31及第一管道32进入至扩散腔22，并通过汇流腔12及第二管道33输送至外界。
流体驱动件31用于向清洁装置提供清洁介质5，根据实际情况中清洁介质5的成分不同，流体驱动件31可以采用不同设备。例如，当清洁介质5为液态流体时，流体驱动件31可以为抽水泵；当清洁介质5为气态流体时，流体驱动件31可以为高压气泵。第一管道32用于连通流体驱动件31与扩散腔22，并将清洁介质5从流体驱动件31移动到扩散腔22内，第二管道33将汇流腔12与外界连通。可选地，第二管道33可以与流体回收设备相连，流体回收设备未在图中示出，进而对清洁介质5进行回收再利用。
在本实施例中，第一管道32上设置有过滤器34，用于分离清洁介质5内的杂质。过滤器34对流体驱动件31供应的清洁介质5进行初步过滤处理，使得进入扩散腔22的清洁介质5符合洁净环境需要。可选地，第二管道33上也可以设置有过滤器34，对于已经使用过的清洁介质5进行再次过滤，方便后续回收利用。
在本实施例中，第一管道上设置有控制阀35，用于控制清洁介质5的 流量，保证清洁介质5的流量可以完全喷淋在晶圆电极4表面的同时，不会在汇流腔12内出现堆积现象。另外本申请对控制阀35与过滤器34在第一管道32上的具体位置不作限定。
由此，本申请实施例提供了一种晶圆电极的清洁装置，无需人工手动清洁，清洁装置包括汇流壳体、盖合罩以及流体输送组件，汇流壳体与盖合罩固定成一体，晶圆电极放置在汇流壳体的支撑台上，流体输送组件经由盖合罩向汇流壳体供应清洁介质。由于扩散腔由进口至连接部的方向呈逐渐增大的趋势，因此清洁介质进入扩散腔时首先会膨化扩散，然后均匀喷淋在晶圆电极表面，提高了晶圆电极的喷淋效果。并且本申请中盖合罩的进口中心线与扩散腔的轴线重合，相较于传统清洁方法，提高了清洁介质在晶圆电极表面喷淋的均匀性，避免出现晶圆电极表面边缘位置无法得到清洁的问题，进而增强了清洁效果。
本领域技术人员应能理解，上述实施例均是示例性而非限制性的。在不同实施例中出现的不同技术特征可以进行组合，以取得有益效果。本领域技术人员在研究附图、说明书及权利要求书的基础上，应能理解并实现所揭示的实施例的其他变化的实施例。在权利要求书中，术语“包括”并不排除其他装置或步骤；物品没有使用数量词修饰时旨在包括一个/种或多个/种物品，并可以与“一个/种或多个/种物品”互换使用”；术语“第一”、“第二”用于标示名称而非用于表示任何特定的顺序。权利要求中的任何附图标记均不应被理解为对保护范围的限制。权利要求中出现的多个部分的功能可以由一个单独的硬件或软件模块来实现。某些技术特征出现在不同的从属权利要求中并不意味着不能将这些技术特征进行组合以取得有益效果。

Claims (10)

  1. 一种晶圆电极的清洁装置，包括：
    汇流壳体，中空结构，所述汇流壳体包括支撑台、汇流腔和排出口，所述汇流腔位于所述支撑台与所述排出口之间，所述汇流腔由所述支撑台至所述排出口的方向呈渐缩趋势；
    盖合罩，中空结构，所述盖合罩包括进口、扩散腔和连接部，所述盖合罩通过所述连接部连接于所述支撑台，所述扩散腔位于所述进口与所述连接部之间，所述扩散腔由所述进口至所述连接部的方向呈逐渐增大的趋势；
    流体输送组件，经由所述盖合罩向所述汇流壳体供应清洁介质，所述流体输送组件与所述进口连接设置，所述清洁介质经由所述扩散腔膨化喷淋至所述支撑台上待清洁的晶圆电极。
  2. 根据权利要求1所述的清洁装置，其中，所述支撑台设置于所述汇流腔内壁上并向所述汇流腔中心位置方向延伸，所述支撑台与所述晶圆电极的接触面为第一表面，所述支撑台在所述第一表面的正投影为环形结构。
  3. 根据权利要求1所述的清洁装置，其中，沿所述进口至所述排出口的方向，所述汇流腔的最大截面尺寸小于所述扩散腔的最大截面尺寸，所述支撑台设置于所述汇流腔外壁上并沿背离所述汇流腔的方向延伸。
  4. 根据权利要求3所述的清洁装置，还包括支撑件，所述支撑件设置于所述汇流腔外侧，并与所述支撑台固定连接。
  5. 根据权利要求1所述的清洁装置，其中，所述排出口尺寸大于所述进口尺寸，以使所述清洁介质在所述排出口的流速不小于所述清洁介质在所述进口处的流速。
  6. 根据权利要求1所述的清洁装置，其中，所述扩散腔为锥体结构，所述进口的中心线与所述扩散腔的轴线重合，以使所述清洁介质均匀喷淋在所述晶圆电极表面。
  7. 根据权利要求1所述的清洁装置，其中，所述连接部与所述支撑台连接处设置有密封圈。
  8. 根据权利要求1所述的清洁装置，其中，所述流体输送组件包括流体驱动件、第一管道和第二管道，所述第一管道一端与所述流体驱动件相连，另一端与所述进口连通，所述第二管道与所述排出口连通，所述清洁介质通过所述流体驱动件及第一管道进入至所述扩散腔，并通过所述汇流腔及所述第二管道输送至外界。
  9. 根据权利要求8所述的清洁装置，其中，所述第一管道设置有过滤器，用于分离所述清洁介质内的杂质。
  10. 根据权利要求8所述的清洁装置，其中，所述第一管道设置有控制阀，用于控制所述清洁介质的流量。
PCT/CN2021/086370 2021-04-01 2021-04-12 晶圆电极的清洁装置 WO2022205495A1 (zh)

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