WO2018059132A1 - 抛光设备 - Google Patents

抛光设备 Download PDF

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Publication number
WO2018059132A1
WO2018059132A1 PCT/CN2017/096492 CN2017096492W WO2018059132A1 WO 2018059132 A1 WO2018059132 A1 WO 2018059132A1 CN 2017096492 W CN2017096492 W CN 2017096492W WO 2018059132 A1 WO2018059132 A1 WO 2018059132A1
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WO
WIPO (PCT)
Prior art keywords
polishing
water spray
polishing apparatus
polishing pad
hole
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PCT/CN2017/096492
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English (en)
French (fr)
Inventor
路新春
赵德文
许振杰
王同庆
李昆
Original Assignee
清华大学
天津华海清科机电科技有限公司
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Application filed by 清华大学, 天津华海清科机电科技有限公司 filed Critical 清华大学
Publication of WO2018059132A1 publication Critical patent/WO2018059132A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Definitions

  • the invention relates to a polishing apparatus.
  • the wafer size has reached a diameter of 300 mm or more, the characteristic line width has reached 22 nm, and further progress toward a smaller line width.
  • the reduction in feature line width is more critical to the quality control of the wafer flattening process. Therefore, it is particularly important to effectively clean the residue on the polishing pad during and after polishing, and to avoid the occurrence of fatal scratch defects on the wafer by the residue of the particles on the polishing pad.
  • the present invention aims to solve at least one of the above technical problems to some extent.
  • the present invention proposes a polishing apparatus which can effectively remove residues on the polishing pad and improve the product quality of the wafer.
  • a polishing apparatus includes: a polishing apparatus including: a polishing disk and a polishing pad on an upper surface of the polishing disk, the polishing device rotating in a direction of a central axis of the polishing pad;
  • the cleaning device is located above the polishing device, and the cleaning device is provided with at least one water spray hole for spraying water to the polishing pad, the spray direction of the spray hole is at an angle with the vertical direction and Opposite to the direction of rotation of the polishing apparatus.
  • the spray direction of the water spray hole is at an angle with the vertical direction and is opposite to the rotation direction of the polishing device, thereby improving the cleaning effect of the cleaning device, preventing the wafer from being scratched, and improving The product quality of the wafer.
  • polishing apparatus may further have the following additional technical features:
  • the cleaning device includes a water spray plate formed with a water passage, and the water spray hole is in communication with the water passage.
  • the bottom surface of the water spray plate is at an angle with the horizontal direction, and the water spray hole extends in a direction perpendicular to the bottom surface of the water spray plate.
  • the bottom surface of the water spray plate is parallel to the horizontal direction, and the water spray hole extends in a certain angle with the horizontal direction.
  • the polishing is performed when the bottom surface of the water spray plate is at a first angle to the horizontal direction
  • the device rotates clockwise in the direction of the central axis of the polishing pad; when the bottom surface of the water jet plate is at a second angle to the horizontal direction, the polishing device rotates counterclockwise along the central axis of the polishing pad.
  • the cleaning device further includes a support assembly, the support assembly includes: a support base; a support post, one end of the support post is connected to the support base, and the other end of the support post is upward Extending; a substrate, the substrate being connected to the other end of the support column, the water spray plate being fixed on a lower surface of the substrate.
  • the support column is provided with a mounting through hole, and the mounting through hole is provided with a cleaning tube, and the cleaning tube is in communication with the water channel.
  • the mounting through hole extends through the upper and lower end faces of the support column.
  • the cleaning device further includes: a cover plate disposed at a distance from the substrate in a vertical direction, and the cover plate is disposed at the other end of the support column.
  • the spray aperture has a spray range that is substantially equal to the radius of the polishing pad.
  • the outer periphery of the bottom surface of the water spray plate extends at least partially downwardly to form a flange.
  • the cleaning device further includes: a nozzle embedded in the water spray hole, and one end of the nozzle is beyond a bottom surface of the water spray plate, an inlet of the nozzle The radial dimension is greater than the radial dimension of the outlet of the nozzle.
  • the substrate is rotatably disposed on the support column in a horizontal direction.
  • FIG. 1 is a cross-sectional view of a polishing apparatus in accordance with one embodiment of the present invention.
  • Figure 2 is a cross-sectional view taken along line A-A of Figure 1, wherein the polishing device rotates clockwise;
  • Figure 3 is a cross-sectional view taken along line A-A of Figure 1, wherein the polishing device rotates counterclockwise;
  • FIG. 4 is a schematic structural view of a polishing apparatus in accordance with one embodiment of the present invention.
  • Polishing device 10 polishing disk 11; polishing pad 12; polishing head 13;
  • Cleaning device 20 water spray plate 21; water spray hole 211; water channel 212; flange 213; bottom surface 214; support assembly 22; support base 221; support column 222; mounting through hole 2221; substrate 223; cover plate 224; ;
  • the wafer size has reached a diameter of more than 300 mm, the characteristic line width has reached 22 nm, and further developed to a smaller line width.
  • the reduction in feature line width is more critical to the quality control of the wafer planarization process. Therefore, it is particularly important to effectively clean the residue on the polishing pad during and after polishing, and to avoid the occurrence of deadly scratch defects on the wafer by the residue of the particles on the polishing pad.
  • a polishing apparatus 100 which can be used for polishing a wafer, will be described below with reference to Figs.
  • the polishing apparatus 100 can generally include a polishing apparatus 10 and a cleaning apparatus 20.
  • the polishing apparatus 100 may be a chemical mechanical polishing apparatus, and the chemical mechanical polishing apparatus may polish the wafer by a combination of chemical etching and mechanical removal.
  • the polishing apparatus 10 in some embodiments of the present invention may generally include a polishing disk 11, a polishing pad 12 on the upper surface of the polishing disk 11, and a polishing head 13 on the polishing pad 12 along which the polishing apparatus 10 is applied
  • the center axis rotates in the direction.
  • the bottom surface 214 of the polishing head 13 is fixed with a wafer, and during the rotation of the polishing apparatus 10, the polishing head 13 is also rotated and the wafer is pressed against the polishing pad 12, thereby achieving mechanical polishing of the wafer.
  • the cleaning device 20 is located above the polishing device 10, and the cleaning device 20 is provided with at least one water spray hole 211 for spraying water to the polishing pad 12.
  • the spray direction of the water spray hole 211 is at an angle with the vertical direction and with the polishing device 10.
  • the horizontal movement direction is opposite. That is, the ejection direction of the water spray hole 211 is not perpendicular to the plane in which the polishing pad 12 is located, that is, the water ejected from the water spray hole 211 can apply a scouring force away from the polishing pad 12 to the residue on the polishing pad 12. Thereby the residue on the polishing pad 12 is effectively removed.
  • the cleaning device 20 can clean the residue on the polishing pad 12 before or after polishing, and can also clean the polishing pad 12 during the polishing process, thereby ensuring that the polishing pad 12 is always kept clean and neat, avoiding Scratch the wafer.
  • the ejection direction of the water spray hole 211 is at an angle with the vertical direction and is opposite to the rotation direction of the polishing apparatus 10, thereby improving the cleaning effect of the cleaning device 20 and avoiding The wafer is scratched, improving the quality of the wafer.
  • the cleaning device 20 may include a water spray plate 21, a support assembly 22, and a cleaning tube 40.
  • the water spray plate 21 is formed with a water passage 212 that communicates with the water passage 212.
  • the water in the cleaning tube 40 is injected into the water channel 212, and then sprayed to the polishing pad 12 through the water spray hole 211, thereby cleaning the polishing pad 12.
  • the bottom surface 214 of the water spray board 21 is at an angle with the horizontal direction, and the water spray hole 211 extends in a direction perpendicular to the bottom surface 214 of the water spray board 21.
  • the bottom surface 214 of the water spray plate 21 is not parallel to the plane of the polishing pad 12, so that the spray direction of the spray hole 211 is at an angle with the vertical direction, and the spray direction of the spray hole 211 is not perpendicular to the polishing pad 12.
  • the plane that is, the water ejected from the water spray hole 211, can apply a scouring force away from the polishing pad 12 to the residue on the polishing pad 12, thereby effectively removing the residue on the polishing pad 12.
  • the polishing apparatus 10 rotates clockwise in the direction of the central axis of the polishing pad 12; as shown in FIG. When the bottom surface 214 of the 21 is at a second angle ⁇ with respect to the horizontal direction, the polishing apparatus 10 rotates counterclockwise in the direction of the central axis of the polishing pad 12.
  • the direction in which the water spray hole 211 extends may not be perpendicular to the bottom surface 214 of the water spray plate 21.
  • the bottom surface 214 of the water spray plate 21 is parallel to the horizontal direction, and the extending direction of the water spray hole 211 is at a certain angle with the horizontal direction.
  • the bottom surface 214 of the water spray plate 21 is parallel to the plane of the polishing pad 12, whereby the spray direction of the water spray hole 211 can be made at an angle with the vertical direction, and the spray direction of the water spray hole 211 is not perpendicular to the polishing pad 12.
  • the plane in which it is sprayed that is, the water ejected from the water spray hole 211, can apply a scouring force away from the polishing pad 12 to the residue on the polishing pad 12, thereby effectively removing the residue on the polishing pad 12.
  • the spray range of the water spray holes 211 is substantially equal to the radius of the polishing pad 12.
  • the outer periphery of the bottom surface 214 of the water spray plate 21 extends at least partially downwardly to form a flange 213. Thereby, liquid sputtering can be prevented.
  • the support assembly 22 can include a support base 221 , a support post 222 , and a substrate 223 .
  • one end of the support post 222 (such as the lower end in FIG. 1) is connected to the support base 221, and the other end of the support post 222 (such as the upper end in FIG. 1) extends upward.
  • the substrate 223 is connected to the other end of the support post 222, and the water spray plate 21 is fixed to the lower surface of the substrate 223.
  • the polishing device 10 and the water spray plate 21 are disposed to face each other in the up and down direction.
  • the support post 222 is provided with a mounting through hole 2221 , and the mounting through hole 2221 is provided with a cleaning tube 40 , and the cleaning tube 40 is in communication with the water channel 212 .
  • the mounting through hole 2221 extends through the upper and lower end faces of the support post 222, that is, the support post 222 is a hollow tubular structure.
  • the cleaning pipe 40 extends from the bottom to the top, and then passes through the substrate 223 to communicate with the water channel 212, thereby realizing water supply to the water channel 212.
  • the cleaning device 20 may further include a cover plate 224.
  • the cover plate 224 is spaced apart from the substrate 223 in the vertical direction, and the cover plate 224 is installed at the other end of the support post 222. As shown in FIGS. 1 and 4, the cover 224 and the substrate Between the 223, an installation space is defined. After the chemical liquid pipe 50 passes through the mounting through hole 2221 from bottom to top, the chemical liquid pipe 50 extends along the longitudinal direction of the installation space (the horizontal direction in FIG.
  • polishing pad 12 sprays the chemical liquid, wherein the liquid outlet of the chemical liquid tube 50 can be located above the center of the polishing pad 12, thereby ensuring that the chemical liquid is uniformly dispersed on the polishing pad 12 to chemically etch the outer surface of the wafer. .
  • the substrate 223 is rotatably disposed on the support post 222 in a horizontal direction.
  • the relative positional relationship between the water spray plate 21 and the polishing pad 12 is adjusted by adjusting the angle between the substrate 223 and the support post 222.
  • the cleaning device 20 may further include: a nozzle 23.
  • the nozzle 23 is embedded in the water spray hole 211, and one end of the nozzle 23 extends beyond the bottom surface 214 of the water spray plate 21, and the radial size of the inlet of the nozzle 23 is larger than the radial size of the outlet of the nozzle 23. Thereby, the water pressure can be increased, and the residue on the polishing pad 12 can be more advantageously removed.
  • polishing apparatus 100 of the embodiment of the present invention will be understood by those skilled in the art and will not be described in detail herein.
  • the terms “installation”, “connected”, “connected”, “fixed” and the like shall be understood broadly, and may be either a fixed connection or a detachable connection, unless explicitly stated and defined otherwise. , or connected integrally; may be mechanical connection or electrical connection; may be directly connected, or may be indirectly connected through an intermediate medium, and may be internal communication between the two elements.
  • installation shall be understood broadly, and may be either a fixed connection or a detachable connection, unless explicitly stated and defined otherwise.
  • , or connected integrally may be mechanical connection or electrical connection; may be directly connected, or may be indirectly connected through an intermediate medium, and may be internal communication between the two elements.
  • the specific meanings of the above terms in the present invention can be understood on a case-by-case basis.
  • the first feature "on” or “under” the second feature may include direct contact of the first and second features, and may also include first and second features, unless otherwise specifically defined and defined. It is not in direct contact but through additional features between them.
  • the first feature “above”, “above” and “above” the second feature includes the first feature directly above and above the second feature, or merely indicating that the first feature level is higher than the second feature.
  • the first feature “below”, “below” and “below” the second feature includes the first feature directly above and above the second feature, or merely the first feature level being less than the second feature.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

一种抛光设备（100），包括：抛光装置（10），抛光装置（10）包括：抛光盘（11）以及位于抛光盘（11）上表面的抛光垫（12），抛光装置（10）沿抛光垫（12）的中心轴线方向旋转；清洗装置（20），清洗装置（20）位于抛光装置（10）的上方，清洗装置（20）设有至少一个向抛光垫（12）喷射水的喷水孔（211），喷水孔（211）的喷射方向与竖直方向呈一定夹角且与抛光装置（10）的旋转方向相对。

Description

抛光设备 技术领域
本发明涉及一种抛光设备。
背景技术
随着集成电路制造技术的发展，晶片尺寸达到直径300mm以上，特征线宽已达到22nm，并进一步向更小线宽发展。特征线宽的减小对晶片平坦化工艺的质量控制更加苛刻。因此，在抛光过程中及抛光前后需要有效清洁抛光垫上的残留物，避免抛光垫上的颗粒残留物对晶片造成致命的划痕缺陷显得尤为重要。
发明内容
本发明旨在至少在一定程度上解决上述技术问题之一。
为此，本发明提出一种抛光设备，该抛光设备可以将抛光垫上的残留物有效清除，提高晶片的产品质量。
根据本发明实施例的抛光设备包括：抛光装置，所述抛光装置包括：抛光盘以及位于所述抛光盘上表面的抛光垫，所述抛光装置沿所述抛光垫的中心轴线方向旋转；清洗装置，所述清洗装置位于所述抛光装置的上方，所述清洗装置设有至少一个向所述抛光垫喷射水的喷水孔，所述喷水孔的喷射方向与竖直方向呈一定夹角且与所述抛光装置的旋转方向相对。
根据本发明实施例的抛光设备，喷水孔的喷射方向与竖直方向呈一定夹角且与抛光装置的旋转方向相对，从而提高了清洗装置的清洗效果，避免了晶片被刮伤，提高了晶片的产品质量。
另外，根据本发明实施例的抛光设备，还可以具有如下附加的技术特征：
根据本发明的一个实施例，所述清洗装置包括：喷水板，所述喷水板形成有水道，所述喷水孔与所述水道连通。
根据本发明的一个实施例，所述喷水板的底面与水平方向呈一定夹角，所述喷水孔的延伸方向垂直于所述喷水板的底面。
根据本发明的一个实施例，所述喷水板的底面与水平方向平行，所述喷水孔的延伸方向与水平方向呈一定夹角。
根据本发明的一个实施例，当所述喷水板的底面与水平方向呈第一角度时，所述抛光 装置沿所述抛光垫的中心轴线方向顺时针方向旋转；当所述喷水板的底面与水平方向呈第二角度时，所述抛光装置沿所述抛光垫的中心轴线方向逆时针方向旋转。
根据本发明的一个实施例，所述清洗装置还包括支撑组件，所述支撑组件包括：支撑座；支撑柱，所述支撑柱的一端与所述支撑座相连，所述支撑柱的另一端向上延伸；基板，所述基板与所述支撑柱的另一端相连，所述喷水板固定在所述基板的下表面。
根据本发明的一个实施例，所述支撑柱设有安装通孔，所述安装通孔内设有清洗管，所述清洗管与所述水道相通。
根据本发明的一个实施例，所述安装通孔贯穿所述支撑柱的上下端面。
根据本发明的一个实施例，所述清洗装置还包括：盖板，所述盖板与所述基板在竖直方向间隔设置，且所述盖板安装设置于所述支撑柱的另一端。
根据本发明的一个实施例，所述喷水孔的喷射范围大等于所述抛光垫的半径。
根据本发明的一个实施例，所述喷水板底面的外周缘至少部分向下延伸形成凸缘。
根据本发明的一个实施例，所述清洗装置还包括：喷嘴，所述喷嘴嵌设在所述喷水孔内，且所述喷嘴的一端超出所述喷水板的底面，所述喷嘴的进口的径向尺寸大于所述喷嘴的出口的径向尺寸。
根据本发明的一个实施例，所述基板在水平方向上可转动地设在所述支撑柱上。
本发明的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中：
图1是根据本发明一个实施例的抛光设备的剖视图；
图2是图1中沿A-A线的剖视图，其中，抛光装置顺时针方向旋转；
图3是图1中沿A-A线的剖视图，其中，抛光装置逆时针方向旋转；
图4是根据本发明一个实施例的抛光设备的结构示意图。
附图标记：
抛光设备100；
抛光装置10；抛光盘11；抛光垫12；抛光头13；
清洗装置20；喷水板21；喷水孔211；水道212；凸缘213；底面214；支撑组件22；支撑座221；支撑柱222；安装通孔2221；基板223；盖板224；喷嘴23；
清洗管40；
化学液管50。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，旨在用于解释本发明，而不能理解为对本发明的限制。
随着集成电路制造技术的发展，晶圆尺寸达到直径300mm以上，特征线宽已达到22nm，并进一步向更小线宽发展。特征线宽的减小对晶圆平坦化工艺的质量控制更加苛刻。因此，在抛光过程中及抛光前后需要有效清洁抛光垫上的残留物，避免抛光垫上的颗粒残留物对晶圆造成致命的划痕缺陷显得尤为重要。
下面参照图1-图4描述根据本发明实施例的抛光设备100，该抛光设备100可用于对晶片的抛光。如图1-图4所示，该抛光设备100大体可以包括：抛光装置10和清洗装置20。其中，抛光设备100可以为化学机械抛光设备，化学机械抛光设备可以通过化学腐蚀作用和机械去除作用相结合的加工技术对晶片进行抛光。
具体地，在本发明一些实施例的抛光装置10大体可以包括抛光盘11、位于所述抛光盘11上表面的抛光垫12以及位于抛光垫12上的抛光头13，抛光装置10沿抛光垫12的中心轴线方向旋转。抛光头13的底面214固定有晶片，抛光装置10在旋转过程中，抛光头13也随之旋转并将晶片按压在抛光垫12上，从而实现对晶片的机械抛光。
清洗装置20位于抛光装置10的上方，清洗装置20设有至少一个向抛光垫12喷水的喷水孔211，喷水孔211的喷射方向与竖直方向呈一定夹角且与抛光装置10的水平运动方向相对。也就是说，喷水孔211的喷射方向不是垂直于抛光垫12所在的平面，即从喷水孔211内喷射出来的水可以对抛光垫12上的残留物施加远离抛光垫12的冲刷力，从而有效清除抛光垫12上的残留物。
参考图2-图4，且由于喷水孔211的喷射方向与抛光装置10的旋转方向相对，因此，可以抛光垫12和喷水孔211之间形成对射之势，有力地将抛光垫12上的残留物清洗干净。
可以理解的是，清洗装置20可以在抛光前或后对抛光垫12上的残留物进行清洗，在抛光过程中也可以对抛光垫12进行清洗，从而保证抛光垫12始终保持干净，整洁，避免对晶片刮伤。
简言之，根据本发明实施例的抛光设备100，喷水孔211的喷射方向与竖直方向呈一定夹角且与抛光装置10的旋转方向相对，从而提高了清洗装置20的清洗效果，避免了晶片被刮伤，提高了晶片的产品质量。
在本发明一些实施例中，清洗装置20可以包括：喷水板21、支撑组件22和清洗管40。喷水板21形成有水道212，喷水孔211与水道212连通。清洗管40内的水注入水道212内，然后通过喷水孔211向抛光垫12喷射，从而对抛光垫12进行清洗。
可选地，如图2和图3所示，喷水板21的底面214与水平方向呈一定夹角，喷水孔211的延伸方向垂直于喷水板21的底面214。换言之，喷水板21的底面214与抛光垫12所在平面不平行，可以使得喷水孔211的喷射方向与竖直方向呈一定夹角，喷水孔211的喷射方向不垂直于抛光垫12所在的平面，即从喷水孔211内喷射出来的水可以对抛光垫12上的残留物施加远离抛光垫12的冲刷力，从而有效清除抛光垫12上的残留物。
如图2所示，当喷水板21的底面214与水平方向呈第一角度α时，抛光装置10沿抛光垫12的中心轴线方向顺时针方向旋转；如图3所示，当喷水板21的底面214与水平方向呈第二角度β时，抛光装置10沿抛光垫12的中心轴线方向逆时针方向旋转。
可以理解的是，喷水板21的底面214与水平方向呈一定夹角时，喷水孔211的延伸方向也可以不垂直于喷水板21的底面214。
可选地，喷水板21的底面214与水平方向平行，喷水孔211的延伸方向与水平方向呈一定夹角。换言之，喷水板21的底面214与抛光垫12所在平面平行，由此可以使得喷水孔211的喷射方向与竖直方向呈一定夹角，喷水孔211的喷射方向不垂直于抛光垫12所在的平面，即从喷水孔211内喷射出来的水可以对抛光垫12上的残留物施加远离抛光垫12的冲刷力，从而有效清除抛光垫12上的残留物。
有利地，喷水孔211的喷射范围大等于抛光垫12的半径。由此，可以将抛光垫12上的残留物有效地清洗干净，提高晶片的质量。
有利地，如图2和图3所示，喷水板21的底面214的外周缘至少部分向下延伸形成凸缘213。由此，可以防止液体溅射。
其中，支撑组件22可以包括：支撑座221、支撑柱222和基板223。具体地，如图1所示，支撑柱222的一端(如图1中的下端)与支撑座221相连，支撑柱222的另一端(如图1中的上端)向上延伸。基板223与支撑柱222的另一端相连，喷水板21固定在基板223的下表面。抛光装置10与喷水板21在上下方向相对设置。
如图1所示，支撑柱222设有安装通孔2221，安装通孔2221内设有清洗管40，清洗管40与水道212相通。安装通孔2221贯穿支撑柱222的上下端面，即支撑柱222为中空的管体结构，清洗管40自下而上延伸，然后穿设基板223与水道212连通，从而实现对水道212供水。
进一步地，清洗装置20还可以包括：盖板224。盖板224与基板223在竖直方向间隔设置，且盖板224安装设置于支撑柱222的另一端。如图1和图4所示，盖板224与基板 223之间限定出安装空间，化学液管50自下而上穿过安装通孔2221内后，沿着安装空间的长度方向(如图1中的左右方向)延伸且伸出安装空间，从而向抛光垫12喷洒化学液，其中，化学液管50的出液口可以位于抛光垫12中心位置的上方，由此，保证化学液体均匀地分散在抛光垫12上，对晶片的外表面进行化学腐蚀。
可选地，基板223在水平方向上可转动地设在支撑柱222上。通过调节基板223与支撑柱222之间的角度，从而调节喷水板21与抛光垫12之间的相对位置关系。
进一步地，清洗装置20还可以包括：喷嘴23。喷嘴23嵌设在喷水孔211内，且喷嘴23的一端超出喷水板21的底面214，喷嘴23的进口的径向尺寸大于喷嘴23的出口的径向尺寸。由此，可以增大水压，更加有利于地将抛光垫12上残留物清除。
对于本发明实施例的抛光设备100的其他构成为本领域技术人所理解的，这里不再详述。
在本发明的描述中，需要理解的是，术语“上”、“下”“、底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度小于第二特征。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
尽管上面已经示出和描述了本发明的实施例，可以理解的是，上述实施例是示例性的， 不能理解为对本发明的限制，本领域的普通技术人员在不脱离本发明的原理和宗旨的情况下在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (13)

  1. 一种抛光设备，其特征在于，包括：
    抛光装置，所述抛光装置包括：抛光盘以及位于所述抛光盘上表面的抛光垫，所述抛光装置沿所述抛光垫的中心轴线方向旋转；
    清洗装置，所述清洗装置位于所述抛光装置的上方，所述清洗装置设有至少一个向所述抛光垫喷射水的喷水孔，所述喷水孔的喷射方向与竖直方向呈一定夹角且与所述抛光装置的旋转方向相对。
  2. 根据权利要求1所述的抛光设备，其特征在于，所述清洗装置包括：喷水板，所述喷水板形成有水道，所述喷水孔与所述水道连通。
  3. 根据权利要求1所述的抛光设备，其特征在于，所述喷水板的底面与水平方向呈一定夹角，所述喷水孔的延伸方向垂直于所述喷水板的底面。
  4. 根据权利要求1所述的抛光设备，其特征在于，所述喷水板的底面与水平方向平行，所述喷水孔的延伸方向与水平方向呈一定夹角。
  5. 根据权利要求4所述的抛光设备，其特征在于，当所述喷水板的底面与水平方向呈第一角度时，所述抛光装置沿所述抛光垫的中心轴线方向顺时针方向旋转；当所述喷水板的底面与水平方向呈第二角度时，所述抛光装置沿所述抛光垫的中心轴线方向逆时针方向旋转。
  6. 根据权利要求2所述的抛光设备，其特征在于，所述清洗装置还包括支撑组件，所述支撑组件包括：
    支撑座；
    支撑柱，所述支撑柱的一端与所述支撑座相连，所述支撑柱的另一端向上延伸；
    基板，所述基板与所述支撑柱的另一端相连，所述喷水板固定在所述基板的下表面。
  7. 根据权利要求6所述的抛光设备，其特征在于，所述支撑柱设有安装通孔，所述安装通孔内设有清洗管，所述清洗管与所述水道相通。
  8. 根据权利要求7所述的抛光设备，其特征在于，所述安装通孔贯穿所述支撑柱的上下端面。
  9. 根据权利要求8所述的抛光设备，其特征在于，所述清洗装置还包括：盖板，所述盖板与所述基板在竖直方向间隔设置，且所述盖板安装设置于所述支撑柱的另一端。
  10. 根据权利要求1所述的抛光设备，其特征在于，所述喷水孔的喷射范围大等于所述抛光垫的半径。
  11. 根据权利要求2所述的抛光设备，其特征在于，所述喷水板底面的外周缘至少部 分向下延伸形成凸缘。
  12. 根据权利要求1所述的抛光设备，其特征在于，所述清洗装置还包括：喷嘴，所述喷嘴嵌设在所述喷水孔内，且所述喷嘴的一端超出所述喷水板的底面，所述喷嘴的进口的径向尺寸大于所述喷嘴的出口的径向尺寸。
  13. 根据权利要求4所述的抛光设备，其特征在于，所述基板在水平方向上可转动地设在所述支撑柱上。
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