JP5333416B2 - 露光装置、露光方法、及びデバイス製造方法 - Google Patents
露光装置、露光方法、及びデバイス製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
Description
R=k1・λ/NA … (1)
δ=±k2・λ/NA2 … (2)
具体的には、露光装置EXは、投影光学系PLの先端部の光学素子PLaと基板Pの表面との間に液体30を満たし、この投影光学系PLの光学素子PLaと基板Pとの間の液体30、及び投影光学系PLを介してマスクMのパターン像を基板P上に投影し、基板Pを露光する。更に露光装置EXは、後に詳述する液体30の気化を抑制する気化抑制装置の少なくとも一部を構成する気化抑制ユニット20を備えている。
マスクステージMSTはマスクMを支持するものであって、投影光学系PLの光軸AXに垂直な平面内、すなわちXY平面内で2次元移動可能及びθZ方向に微小回転可能である。マスクステージMSTはリニアモータ等で構成されるマスクステージ駆動装置MSTDにより駆動される。マスクステージ駆動装置MSTDは制御装置CONTにより制御される。マスクステージMST上には移動鏡50が設けられている。また、移動鏡50に対向する位置にはレーザ干渉計51が設けられている。マスクステージMST上のマスクMの2次元方向の位置、及び回転角はレーザ干渉計51によりリアルタイムで計測され、計測結果は制御装置CONTに出力される。制御装置CONTはレーザ干渉計51の計測結果に基づいてマスクステージ駆動装置MSTDを駆動することでマスクステージMSTに支持されているマスクMの位置決めを行う。
供給ノズル4A〜4Cは供給管3を介して液体供給装置1に接続され、回収ノズル5A、5Bは回収管6を介して液体回収装置2に接続されている。また、供給ノズル4A〜4Cと回収ノズル5A、5Bとをほぼ180°回転した配置に、供給ノズル8A〜8Cと、回収ノズル9A、9Bとが配置されている。供給ノズル4A〜4Cと回収ノズル9A、9BとはY軸方向に交互に配列され、供給ノズル8A〜8Cと回収ノズル5A、5BとはY軸方向に交互に配列され、供給ノズル8A〜8Cは供給管11を介して液体供給装置1に接続され、回収ノズル9A、9Bは回収管12を介して液体回収装置2に接続されている。
一方、矢印Xbで示す走査方向(+X方向)に基板Pを移動させて走査露光を行う場合には、供給管11、供給ノズル8A〜8C、回収管12、及び回収ノズル9A、9Bを用いて、液体供給装置1及び液体回収装置2により液体30の供給及び回収が行われる。このように、液浸ユニット10は、液体供給装置1及び液体回収装置2を用いて、基板Pの移動方向に沿って基板Pの移動方向と同一方向へ液体30を流す。この場合、例えば液体供給装置1から供給ノズル4A〜4Cを介して供給される液体30は基板Pの−X方向への移動に伴って投影光学系PLと基板Pとの間に引き込まれるようにして流れるので、液体供給装置1の供給エネルギーが小さくでも液体30を投影光学系PLと基板Pとの間に容易に供給できる。そして、走査方向に応じて液体30を流す方向を切り替えることにより+X方向あるいは−X方向のどちらの方向に基板Pを走査する場合にも、投影光学系PLと基板Pとの間を液体30で満たすことができ、高い解像度及び広い焦点深度を得ることができる。また、壁部材22の上端部と蓋部材23との間に微小隙間25が設けられているので、閉空間24内を飽和蒸気圧近くに維持しつつ、基板ステージPSTを移動することもできる。
ここで、基板ステージPSTの位置計測に用いる干渉計の計測光は閉空間61内を通過する場合があるが、閉空間61内の蒸気により計測動作に影響を与えないように、計測光の光路を伸縮自在の管状部材で覆うことができる。
また、第1、第2実施形態のような大きな閉空間24,61に限らず、液体と接触(付着)する部分を囲むように局所的な閉空間を設けるようにしてもよい。
Claims (19)
- 投影光学系と基板との間の一部を液体で満たし、前記投影光学系と前記液体とを介してパターンの像を前記基板上に投影し、前記基板を露光する露光装置であって、
加湿器を備え、
前記加湿器からの気体を前記液体の周囲に供給する露光装置。 - 前記基板上に前記液体を供給する液体供給機構と、
前記基板上の前記液体を回収する液体回収機構と、を備え、
前記液体供給機構の液体供給と前記液体回収機構の液体回収とにより前記基板上の一部の領域に前記液体で液浸領域が形成され、
前記加湿器からの気体を前記液浸領域の周囲に供給する請求項1に記載の露光装置。 - 前記投影光学系と前記基板との間の前記液体の周囲の空間を囲む隔壁部材を備え、
前記加湿器からの気体が、前記隔壁部材によって形成される閉空間に供給される請求項1又は2に記載の露光装置。 - 前記加湿器からの気体により、前記閉空間の蒸気圧を、その外側よりも高くする請求項3に記載の露光装置。
- 前記加湿器からの気体により、前記閉空間を前記液体の飽和蒸気圧にする請求項3又は4に記載の露光装置。
- 前記加湿器からの気体が、前記投影光学系の先端に供給される請求項1又は2に記載の露光装置。
- 前記加湿器からの気体が、前記基板に供給される請求項1又は2に記載の露光装置。
- 湿度センサを備え、
前記湿度センサの出力に基づいて前記加湿器が制御される請求項1〜7のいずれか一項に記載の露光装置。 - 前記加湿器からの気体は、前記液体と同じ物質の蒸気、または前記液体が気化したときに生じる蒸気と同じ組成の蒸気である請求項1〜8のいずれか一項に記載の露光装置。
- 前記液体は、純水であり、
前記加湿器の気体は、水蒸気である請求項1〜9のいずれか一項に記載の露光装置。 - 前記加湿器からの気体により、前記液体の気化を抑制する請求項1〜10のいずれか一項に記載の露光装置。
- 請求項1〜11のいずれか一項に記載の露光装置を用いるデバイス製造方法。
- 投影光学系と基板との間の一部を液体で満たし、前記投影光学系と前記液体とを介してパターンの像を前記基板上に投影し、前記基板を露光する露光方法であって、
加湿器からの気体を前記液体の周囲に供給することを含み、
前記加湿器からの気体により、前記液体の気化を抑制する露光方法。 - 前記基板上に液体供給機構から前記液体を供給することと、
前記基板上の前記液体を液体回収機構から回収することと、を含み、
前記液体供給機構の液体供給と前記液体回収機構の液体回収とにより前記基板上の一部の領域に前記液体で液浸領域が形成され、
前記加湿器からの気体を前記液浸領域の周囲に供給する請求項13に記載の露光方法。 - 前記加湿器からの気体が、前記投影光学系の先端に供給される請求項13又は14に記載の露光方法。
- 前記加湿器からの気体が、前記基板に供給される請求項13又は14に記載の露光方法。
- 前記加湿器からの気体は、前記液体と同じ物質の蒸気、または前記液体が気化したときに生じる蒸気と同じ組成の蒸気である請求項13〜16のいずれか一項に記載の露光方法。
- 前記液体は、純水であり、
前記加湿器の気体は、水蒸気である請求項13〜17のいずれか一項に記載の露光方法。 - 請求項13〜18のいずれか一項に記載の露光方法を用いるデバイス製造方法。
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JP4353179B2 (ja) | 2009-10-28 |
EP1610361B1 (en) | 2014-05-21 |
WO2004086470A1 (ja) | 2004-10-07 |
JP2009158977A (ja) | 2009-07-16 |
JP4858569B2 (ja) | 2012-01-18 |
US20080030697A1 (en) | 2008-02-07 |
US7916272B2 (en) | 2011-03-29 |
JP5626230B2 (ja) | 2014-11-19 |
KR20110097945A (ko) | 2011-08-31 |
US20060268249A1 (en) | 2006-11-30 |
KR101181688B1 (ko) | 2012-09-19 |
US8018570B2 (en) | 2011-09-13 |
US7471371B2 (en) | 2008-12-30 |
KR20050110033A (ko) | 2005-11-22 |
US20060012765A1 (en) | 2006-01-19 |
US8804095B2 (en) | 2014-08-12 |
US20070109516A1 (en) | 2007-05-17 |
US8558987B2 (en) | 2013-10-15 |
KR101345474B1 (ko) | 2013-12-27 |
EP1610361A1 (en) | 2005-12-28 |
JPWO2004086470A1 (ja) | 2006-06-29 |
US20140028987A1 (en) | 2014-01-30 |
JP2011044736A (ja) | 2011-03-03 |
KR20120049407A (ko) | 2012-05-16 |
JP5725133B2 (ja) | 2015-05-27 |
EP1610361A4 (en) | 2007-10-03 |
JP2012080148A (ja) | 2012-04-19 |
JP2014030061A (ja) | 2014-02-13 |
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