JP5332168B2 - Ｉｉｉ族窒化物結晶の製造方法 - Google Patents

Ｉｉｉ族窒化物結晶の製造方法 Download PDF

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Publication number
JP5332168B2
JP5332168B2 JP2007258567A JP2007258567A JP5332168B2 JP 5332168 B2 JP5332168 B2 JP 5332168B2 JP 2007258567 A JP2007258567 A JP 2007258567A JP 2007258567 A JP2007258567 A JP 2007258567A JP 5332168 B2 JP5332168 B2 JP 5332168B2
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Prior art keywords
crystal
group iii
iii nitride
substrates
nitride crystal
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Expired - Fee Related
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JP2007258567A
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Japanese (ja)
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JP2008143772A5 (enExample
JP2008143772A (ja
Inventor
奈保 水原
康二 上松
倫正 宮永
圭祐 谷崎
英章 中幡
成二 中畑
拓司 岡久
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2007258567A priority Critical patent/JP5332168B2/ja
Priority to EP07831826.8A priority patent/EP2083099B1/en
Priority to PCT/JP2007/072096 priority patent/WO2008059875A1/ja
Priority to KR1020097008369A priority patent/KR101410534B1/ko
Publication of JP2008143772A publication Critical patent/JP2008143772A/ja
Priority to US12/467,297 priority patent/US8258051B2/en
Publication of JP2008143772A5 publication Critical patent/JP2008143772A5/ja
Priority to US13/564,731 priority patent/US8404042B2/en
Priority to US13/762,401 priority patent/US8709923B2/en
Application granted granted Critical
Publication of JP5332168B2 publication Critical patent/JP5332168B2/ja
Priority to US14/194,830 priority patent/US8872309B2/en
Priority to US14/491,962 priority patent/US9064706B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24752—Laterally noncoextensive components

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2007258567A 2006-11-17 2007-10-02 Ｉｉｉ族窒化物結晶の製造方法 Expired - Fee Related JP5332168B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2007258567A JP5332168B2 (ja) 2006-11-17 2007-10-02 Ｉｉｉ族窒化物結晶の製造方法
EP07831826.8A EP2083099B1 (en) 2006-11-17 2007-11-14 Method of manufacturing iii-nitride crystal
PCT/JP2007/072096 WO2008059875A1 (fr) 2006-11-17 2007-11-14 Procédé de fabrication d'un cristal de nitrure d'élément du groupe iii
KR1020097008369A KR101410534B1 (ko) 2006-11-17 2007-11-14 Ⅲ족 질화물 결정의 제조 방법
US12/467,297 US8258051B2 (en) 2006-11-17 2009-05-17 Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal
US13/564,731 US8404042B2 (en) 2006-11-17 2012-08-02 Group-III nitride crystal composite
US13/762,401 US8709923B2 (en) 2006-11-17 2013-02-08 Method of manufacturing III-nitride crystal
US14/194,830 US8872309B2 (en) 2006-11-17 2014-03-03 Composite of III-nitride crystal on laterally stacked substrates
US14/491,962 US9064706B2 (en) 2006-11-17 2014-09-19 Composite of III-nitride crystal on laterally stacked substrates

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006311622 2006-11-17
JP2006311622 2006-11-17
JP2007258567A JP5332168B2 (ja) 2006-11-17 2007-10-02 Ｉｉｉ族窒化物結晶の製造方法

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JP2008143772A5 JP2008143772A5 (enExample) 2010-11-04
JP5332168B2 true JP5332168B2 (ja) 2013-11-06

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US (4) US8258051B2 (enExample)
EP (1) EP2083099B1 (enExample)
JP (1) JP5332168B2 (enExample)
KR (1) KR101410534B1 (enExample)
WO (1) WO2008059875A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015224143A (ja) * 2014-05-26 2015-12-14 株式会社サイオクス Ｉｉｉ族窒化物基板の製造方法
JP2018058737A (ja) * 2016-10-07 2018-04-12 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法
US11662374B2 (en) 2017-03-17 2023-05-30 Furukawa Co., Ltd. Group III nitride semiconductor substrate

Families Citing this family (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9202872B2 (en) 2006-04-07 2015-12-01 Sixpoint Materials, Inc. Method of growing group III nitride crystals
US9543393B2 (en) * 2006-04-07 2017-01-10 Sixpoint Materials, Inc. Group III nitride wafer and its production method
US9518340B2 (en) 2006-04-07 2016-12-13 Sixpoint Materials, Inc. Method of growing group III nitride crystals
JP5332168B2 (ja) 2006-11-17 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
US9064706B2 (en) 2006-11-17 2015-06-23 Sumitomo Electric Industries, Ltd. Composite of III-nitride crystal on laterally stacked substrates
WO2008100502A1 (en) 2007-02-12 2008-08-21 The Regents Of The University Of California Al(x)ga(1-x)n-cladding-free nonpolar iii-nitride based laser diodes and light emitting diodes
JP2009286652A (ja) 2008-05-28 2009-12-10 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶、ｉｉｉ族窒化物結晶基板および半導体デバイスの製造方法
JP2010006685A (ja) * 2008-05-28 2010-01-14 Sumitomo Electric Ind Ltd ＡｌｘＧａ１−ｘＮ単結晶および電磁波透過体
WO2010001804A1 (ja) * 2008-07-01 2010-01-07 住友電気工業株式会社 ＡｌxＧａ(1-x)Ｎ単結晶の製造方法、ＡｌxＧａ(1-x)Ｎ単結晶および光学部品
JP5012700B2 (ja) * 2008-07-01 2012-08-29 住友電気工業株式会社 Ｉｉｉ族窒化物結晶接合基板およびその製造方法ならびにｉｉｉ族窒化物結晶の製造方法
US8673074B2 (en) * 2008-07-16 2014-03-18 Ostendo Technologies, Inc. Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
JP2010042980A (ja) * 2008-07-17 2010-02-25 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶
US8502337B2 (en) * 2008-08-05 2013-08-06 Sumitomo Electric Industries, Ltd. Schottky barrier diode and method for manufacturing Schottky barrier diode
JP5112983B2 (ja) * 2008-08-06 2013-01-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体製造方法およびｉｉｉ族窒化物半導体育成用の種結晶
JP4908467B2 (ja) * 2008-08-06 2012-04-04 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体結晶の製造方法
US8829658B2 (en) 2008-09-01 2014-09-09 Sumitomo Electric Industries, Ltd. Method of manufacturing nitride substrate, and nitride substrate
JP2010068097A (ja) * 2008-09-09 2010-03-25 Sumitomo Electric Ind Ltd 弾性表面波素子
JP2010068109A (ja) * 2008-09-09 2010-03-25 Sumitomo Electric Ind Ltd 弾性表面波素子
JP4730422B2 (ja) 2008-10-24 2011-07-20 住友電気工業株式会社 Ｉｉｉ族窒化物半導体電子デバイス、ｉｉｉ族窒化物半導体電子デバイスを作製する方法、及びｉｉｉ族窒化物半導体エピタキシャルウエハ
JP5515341B2 (ja) * 2009-03-16 2014-06-11 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長方法
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
JP5509680B2 (ja) * 2009-06-01 2014-06-04 三菱化学株式会社 Ｉｉｉ族窒化物結晶及びその製造方法
WO2010140564A1 (ja) * 2009-06-01 2010-12-09 三菱化学株式会社 窒化物半導体結晶およびその製造方法
JP5446622B2 (ja) * 2009-06-29 2014-03-19 住友電気工業株式会社 Ｉｉｉ族窒化物結晶およびその製造方法
JP5888317B2 (ja) * 2009-06-29 2016-03-22 住友電気工業株式会社 Ｉｉｉ族窒化物結晶
JP2011016676A (ja) 2009-07-07 2011-01-27 Sumitomo Electric Ind Ltd 窒化物半導体基板の製造方法
JP5447289B2 (ja) * 2009-08-19 2014-03-19 三菱化学株式会社 窒化物半導体結晶およびその製造方法
JP5549158B2 (ja) * 2009-09-04 2014-07-16 住友電気工業株式会社 ＧａＮ単結晶基板およびその製造方法、ならびにＧａＮ系半導体デバイスおよびその製造方法
JP5549157B2 (ja) * 2009-09-04 2014-07-16 住友電気工業株式会社 ＧａＮ単結晶基板およびその製造方法、ならびにＧａＮ系半導体デバイスおよびその製造方法
JP5471251B2 (ja) * 2009-09-30 2014-04-16 住友電気工業株式会社 ＧａＮ単結晶基板およびＧａＮ系半導体デバイス
US8598685B2 (en) 2009-09-04 2013-12-03 Sumitomo Electric Industries, Ltd. GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof
JP5365454B2 (ja) * 2009-09-30 2013-12-11 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
JP5381581B2 (ja) * 2009-09-30 2014-01-08 住友電気工業株式会社 窒化ガリウム基板
JP5423294B2 (ja) * 2009-09-30 2014-02-19 住友電気工業株式会社 窒化物半導体発光素子
US8629065B2 (en) 2009-11-06 2014-01-14 Ostendo Technologies, Inc. Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
JP5445105B2 (ja) * 2009-12-18 2014-03-19 三菱化学株式会社 Ｉｉｉ族窒化物結晶の製造方法及びｉｉｉ族窒化物結晶
JP5573225B2 (ja) * 2010-02-26 2014-08-20 三菱化学株式会社 第１３族金属窒化物結晶の製造方法、該製造方法により得られる第１３族金属窒化物結晶および半導体デバイスの製造方法
TWI560963B (en) 2010-03-04 2016-12-01 Univ California Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/- 15 degrees in the c-direction
EP2556572A1 (en) 2010-04-05 2013-02-13 The Regents of the University of California Aluminum gallium nitride barriers and separate confinement heterostructure (sch) layers for semipolar plane iii-nitride semiconductor-based light emitting diodes and laser diodes
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
JP2012006772A (ja) * 2010-06-22 2012-01-12 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の成長方法およびｉｉｉ族窒化物結晶基板
JP2012019069A (ja) * 2010-07-08 2012-01-26 Toshiba Corp 電界効果トランジスタおよび電界効果トランジスタの製造方法
JP5757068B2 (ja) * 2010-08-02 2015-07-29 住友電気工業株式会社 ＧａＮ結晶の成長方法
JP5789929B2 (ja) * 2010-08-03 2015-10-07 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長方法
JP5620762B2 (ja) * 2010-09-09 2014-11-05 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板およびｉｉｉ族窒化物半導体基板の製造方法
JP6031733B2 (ja) 2010-09-27 2016-11-24 住友電気工業株式会社 ＧａＮ結晶の製造方法
JP5830973B2 (ja) * 2010-12-01 2015-12-09 三菱化学株式会社 ＧａＮ自立基板および半導体発光デバイスの製造方法
JP2012136418A (ja) * 2010-12-01 2012-07-19 Mitsubishi Chemicals Corp Ｉｉｉ族窒化物半導体基板とその製造方法
US8742460B2 (en) * 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
JP5678653B2 (ja) * 2010-12-28 2015-03-04 三菱化学株式会社 六方晶系半導体板状結晶の製造方法
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
JP2013087029A (ja) * 2011-10-20 2013-05-13 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の成長方法
KR101976229B1 (ko) * 2011-10-21 2019-05-07 미쯔비시 케미컬 주식회사 주기표 제 13 족 금속 질화물 반도체 결정의 제조 방법, 및 그 제조 방법에 의해 제조되는 주기표 제 13 족 금속 질화물 반도체 결정
CN104040039B (zh) 2012-01-11 2016-08-31 国立大学法人大阪大学 Iii族氮化物结晶的制造方法、iii族氮化物结晶及半导体装置
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
JP5898555B2 (ja) * 2012-04-06 2016-04-06 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板およびｉｉｉ族窒化物半導体基板の製造方法
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
WO2014051684A1 (en) 2012-09-26 2014-04-03 Sixpoint Materials, Inc. Group iii nitride wafers and fabrication method and testing method
JP2013082628A (ja) * 2013-02-12 2013-05-09 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶、ｉｉｉ族窒化物結晶基板および半導体デバイスの製造方法
US9171730B2 (en) 2013-02-15 2015-10-27 Transphorm Inc. Electrodes for semiconductor devices and methods of forming the same
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
KR102320083B1 (ko) 2013-08-08 2021-11-02 미쯔비시 케미컬 주식회사 자립 ＧａＮ 기판, ＧａＮ 결정, ＧａＮ 단결정의 제조 방법 및 반도체 디바이스의 제조 방법
JP2014001138A (ja) * 2013-09-25 2014-01-09 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板およびその製造方法、ならびにＧａＮ系半導体デバイスおよびその製造方法
JP2014001137A (ja) * 2013-09-25 2014-01-09 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板およびその製造方法、ならびにＧａＮ系半導体デバイスおよびその製造方法
CN105917035B (zh) 2014-01-17 2019-06-18 三菱化学株式会社 GaN基板、GaN基板的制造方法、GaN结晶的制造方法和半导体器件的制造方法
JP6573154B2 (ja) * 2014-06-05 2019-09-11 パナソニックＩｐマネジメント株式会社 窒化物半導体構造、窒化物半導体構造を備えた電子デバイス、窒化物半導体構造を備えた発光デバイス、および窒化物半導体構造を製造する方法
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
EP3183225A1 (en) * 2014-08-22 2017-06-28 Patrick E. Hopkins Method of forming a thermal barrier coating
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
JP5950070B1 (ja) 2014-12-16 2016-07-13 三菱化学株式会社 ＧａＮ基板
WO2017010166A1 (ja) 2015-07-14 2017-01-19 三菱化学株式会社 非極性または半極性ＧａＮウエハ
JP6547506B2 (ja) * 2015-08-05 2019-07-24 三菱ケミカル株式会社 窒化物半導体結晶の製造方法
US10364510B2 (en) 2015-11-25 2019-07-30 Sciocs Company Limited Substrate for crystal growth having a plurality of group III nitride seed crystals arranged in a disc shape
JP6604205B2 (ja) * 2016-01-05 2019-11-13 国立大学法人大阪大学 窒化物結晶基板の製造方法および結晶成長用基板
CN108604597B (zh) 2016-01-15 2021-09-17 创世舫电子有限公司 具有al(1-x)sixo栅极绝缘体的增强模式iii-氮化物器件
US10953575B2 (en) 2016-02-12 2021-03-23 The Boeing Company Enhanced systems that facilitate vacuum bag curing of composite parts
JP6203460B1 (ja) * 2016-03-08 2017-09-27 株式会社サイオクス 窒化物結晶基板
WO2017210323A1 (en) 2016-05-31 2017-12-07 Transphorm Inc. Iii-nitride devices including a graded depleting layer
JP6861490B2 (ja) * 2016-09-07 2021-04-21 株式会社サイオクス 窒化物結晶基板の製造方法および結晶成長用基板
JP6735647B2 (ja) 2016-09-29 2020-08-05 株式会社サイオクス 窒化物結晶基板の製造方法
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
TWI698546B (zh) * 2019-06-20 2020-07-11 環球晶圓股份有限公司 具有氮化鋁成核層的基板及其製造方法
JP6701418B1 (ja) * 2019-07-26 2020-05-27 Ｊｘ金属株式会社 リン化インジウム基板、及びリン化インジウム基板の製造方法
EP4104201A1 (en) 2020-02-11 2022-12-21 SLT Technologies, Inc. Improved group iii nitride substrate, method of making, and method of use
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US12224344B2 (en) * 2021-04-08 2025-02-11 Semiconductor Components Industries, Llc Method and system for control of sidewall orientation in vertical gallium nitride field effect transistors
EP4502252A4 (en) 2022-03-31 2025-09-03 Mitsubishi Chem Corp GAN CRYSTAL AND GAN SLICE

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5127983A (en) * 1989-05-22 1992-07-07 Sumitomo Electric Industries, Ltd. Method of producing single crystal of high-pressure phase material
US5443032A (en) * 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
JP3350992B2 (ja) * 1993-02-05 2002-11-25 住友電気工業株式会社 ダイヤモンドの合成方法
SE9502288D0 (sv) * 1995-06-26 1995-06-26 Abb Research Ltd A device and a method for epitaxially growing objects by CVD
US6348096B1 (en) * 1997-03-13 2002-02-19 Nec Corporation Method for manufacturing group III-V compound semiconductors
JPH1143398A (ja) * 1997-07-22 1999-02-16 Mitsubishi Cable Ind Ltd ＧａＮ系結晶成長用基板およびその用途
US6306211B1 (en) * 1999-03-23 2001-10-23 Matsushita Electric Industrial Co., Ltd. Method for growing semiconductor film and method for fabricating semiconductor device
JP3702700B2 (ja) * 1999-03-31 2005-10-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
JP4145437B2 (ja) 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP2001122693A (ja) * 1999-10-22 2001-05-08 Nec Corp 結晶成長用下地基板およびこれを用いた基板の製造方法
EP1268883A1 (en) * 2000-03-13 2003-01-02 II-VI Incorporated Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals
JP3968968B2 (ja) * 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
JP3988018B2 (ja) * 2001-01-18 2007-10-10 ソニー株式会社 結晶膜、結晶基板および半導体装置
US6939730B2 (en) * 2001-04-24 2005-09-06 Sony Corporation Nitride semiconductor, semiconductor device, and method of manufacturing the same
AUPS112202A0 (en) * 2002-03-14 2002-04-18 Commonwealth Scientific And Industrial Research Organisation Semiconductor manufacture
JP2005162526A (ja) 2003-12-02 2005-06-23 Matsushita Electric Ind Co Ltd 窒化ガリウム結晶作成方法
JP4622447B2 (ja) * 2004-01-23 2011-02-02 住友電気工業株式会社 Ｉｉｉ族窒化物結晶基板の製造方法
JP4581490B2 (ja) 2004-05-31 2010-11-17 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法、及びｉｉｉ−ｖ族窒化物系半導体の製造方法
JP4670002B2 (ja) * 2004-07-20 2011-04-13 学校法人早稲田大学 窒化物単結晶の製造方法
US7192482B2 (en) * 2004-08-10 2007-03-20 Cree, Inc. Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
JP2006137661A (ja) * 2004-10-12 2006-06-01 Sumitomo Electric Ind Ltd 窒化ガリウムウエハ
US7462505B2 (en) * 2005-02-23 2008-12-09 Tekcore Co., Ltd. Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound
JP4915128B2 (ja) * 2005-04-11 2012-04-11 日亜化学工業株式会社 窒化物半導体ウエハ及びその製造方法
JP5332168B2 (ja) * 2006-11-17 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
JP4259591B2 (ja) * 2007-01-16 2009-04-30 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法、ｉｉｉ族窒化物結晶基板およびｉｉｉ族窒化物半導体デバイス
WO2008143166A1 (ja) * 2007-05-17 2008-11-27 Mitsubishi Chemical Corporation Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板および半導体発光デバイス
JP4714192B2 (ja) * 2007-07-27 2011-06-29 住友電気工業株式会社 窒化ガリウム結晶の成長方法、窒化ガリウム結晶基板、エピウエハの製造方法およびエピウエハ
WO2009035648A1 (en) * 2007-09-14 2009-03-19 Kyma Technologies, Inc. Non-polar and semi-polar gan substrates, devices, and methods for making them
WO2009047894A1 (ja) * 2007-10-09 2009-04-16 Panasonic Corporation Iii族窒化物結晶基板の製造方法、iii族窒化物結晶基板、iii族窒化物結晶基板を用いた半導体装置
US20090278125A1 (en) * 2008-04-17 2009-11-12 Xiangfeng Duan Crystalline semiconductor films, growth of such films and devices including such films
JP2009286652A (ja) * 2008-05-28 2009-12-10 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶、ｉｉｉ族窒化物結晶基板および半導体デバイスの製造方法
JP2010042980A (ja) * 2008-07-17 2010-02-25 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶
US8048225B2 (en) * 2009-01-29 2011-11-01 Soraa, Inc. Large-area bulk gallium nitride wafer and method of manufacture
JP5446622B2 (ja) * 2009-06-29 2014-03-19 住友電気工業株式会社 Ｉｉｉ族窒化物結晶およびその製造方法
US8598685B2 (en) * 2009-09-04 2013-12-03 Sumitomo Electric Industries, Ltd. GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof
JP5397136B2 (ja) * 2009-09-30 2014-01-22 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015224143A (ja) * 2014-05-26 2015-12-14 株式会社サイオクス Ｉｉｉ族窒化物基板の製造方法
US10053796B2 (en) 2014-05-26 2018-08-21 Sumitomo Chemical Company, Limited Method for manufacturing group III nitride substrate formed of a group III nitride crystal
JP2018058737A (ja) * 2016-10-07 2018-04-12 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法
US11662374B2 (en) 2017-03-17 2023-05-30 Furukawa Co., Ltd. Group III nitride semiconductor substrate

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