JP5765367B2 - GaN結晶 - Google Patents
GaN結晶 Download PDFInfo
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- JP5765367B2 JP5765367B2 JP2013097711A JP2013097711A JP5765367B2 JP 5765367 B2 JP5765367 B2 JP 5765367B2 JP 2013097711 A JP2013097711 A JP 2013097711A JP 2013097711 A JP2013097711 A JP 2013097711A JP 5765367 B2 JP5765367 B2 JP 5765367B2
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- 239000013078 crystal Substances 0.000 title claims description 466
- 238000005259 measurement Methods 0.000 claims description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 description 274
- 150000004767 nitrides Chemical class 0.000 description 200
- 229910002601 GaN Inorganic materials 0.000 description 154
- 238000000034 method Methods 0.000 description 45
- 238000004519 manufacturing process Methods 0.000 description 25
- 238000005520 cutting process Methods 0.000 description 16
- 125000004429 atom Chemical group 0.000 description 13
- 239000007789 gas Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 8
- 125000004430 oxygen atom Chemical group O* 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 238000005092 sublimation method Methods 0.000 description 5
- 239000012808 vapor phase Substances 0.000 description 5
- 229910021480 group 4 element Inorganic materials 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005136 cathodoluminescence Methods 0.000 description 3
- 238000007716 flux method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910021098 KOH—NaOH Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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Description
本願発明にかかるIII族窒化物結晶の製造方法に用いられるIII族窒化物バルク結晶であるGaNバルク結晶を、図2を参照して、以下の方法で作製した。
まず、図3(a)を参照して、GaNバルク結晶(III族窒化物バルク結晶1)の両主面である(0001)面および(000−1)面を、研削および研磨加工して、両主面の平均粗さRaを5nmとした。ここで、表面の平均粗さRaの測定は、AFMにより行なった。
図3(a)を参照して、GaNバルク結晶(III族窒化物バルク結晶1)の両主面である(0001)面および(000−1)面を、研削および研磨加工して、両主面の平均粗さRaを50nmとしたこと以外は、参考例1と同様にして、複数のGaN結晶基板(III族窒化物結晶基板10p,10q)を切り出し、各GaN結晶基板の研削および研磨加工されていない4面を研削および研磨加工して、これら4面の平均粗さRaを5nmとした。複数のGaN結晶基板の中には、その主面の面方位が{1−100}と完全に一致していないGaN結晶基板もあったが、かかるGaN結晶基板のいずれについても、その主面の面方位は{1−100}に対するオフ角が5°以下であった。
まず、図5(a)を参照して、GaNバルク結晶(III族窒化物バルク結晶1)の両主面である(0001)面および(000−1)面を、研削および研磨加工して、両主面の平均粗さRaを5nmとした。
まず、図6(a)を参照して、GaNバルク結晶(III族窒化物バルク結晶1)の両主面である(0001)面および(000−1)面を、研削加工して、両主面の平均粗さRaを50nmとした。
まず、図7(a)を参照して、GaNバルク結晶(III族窒化物バルク結晶1)の両主面である(0001)面および(000−1)面を、研削加工して、両主面の平均粗さRaを50nmとした。
まず、図8(a)を参照して、GaNバルク結晶(III族窒化物バルク結晶1)の両主面である(0001)面および(000−1)面を、研削および研磨加工して、両主面の平均粗さRaを5nmとした。
まず、図9(a)を参照して、GaNバルク結晶(III族窒化物バルク結晶1)の両主面である(0001)面および(000−1)面を、研削および研磨加工して、両主面の平均粗さRaを5nmとした。
本願発明にかかるIII族窒化物結晶の製造方法に用いられるIII族窒化物バルク結晶であるAlNバルク結晶を以下の方法で作製した。
まず、図3(a)を参照して、AlNバルク結晶(III族窒化物バルク結晶1)の両主面である(0001)面および(000−1)面を、研削および研磨加工して、両主面の平均粗さRaを5nmとした。
まず、図3(a)を参照して、AlNバルク結晶の両主面である(0001)面および(000−1)面を、研削および研磨加工して、両主面の平均粗さRaを50nmとした。
Claims (2)
- {0001}以外の任意に特定される面方位の主面を有し、
前記特定される面方位は、{1−10X}(ここで、Xは0以上の整数)、{11−2Y}(ここで、Yは0以上の整数)および{HK−(H+K)0}(ここで、HおよびKは0以外の整数)から{1−100}および{11−20}を除いた面方位からなる群から選ばれるいずれかの結晶幾何学的に等価な面方位に対するオフ角が5°以下であり、
X線ロッキングカーブ測定において先端に分裂がない回折ピークが得られる領域と、前記X線ロッキングカーブ測定において先端に分裂がある回折ピークが得られる領域と、を含むGaN結晶。 - 前記{1−10X}(ここで、Xは0以上の整数)、{11−2Y}(ここで、Yは0以上の整数)および{HK−(H+K)0}(ここで、HおよびKは0以外の整数)から{1−100}および{11−20}を除いた面方位からなる群は、{1−102}および{11−22}からなる群である請求項1に記載のGaN結晶。
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JP2013097711A JP5765367B2 (ja) | 2006-11-17 | 2013-05-07 | GaN結晶 |
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JP2007258567A Division JP5332168B2 (ja) | 2006-11-17 | 2007-10-02 | Iii族窒化物結晶の製造方法 |
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Families Citing this family (7)
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JP5789929B2 (ja) * | 2010-08-03 | 2015-10-07 | 住友電気工業株式会社 | Iii族窒化物結晶の成長方法 |
JP6031733B2 (ja) * | 2010-09-27 | 2016-11-24 | 住友電気工業株式会社 | GaN結晶の製造方法 |
JP6479054B2 (ja) * | 2015-01-29 | 2019-03-06 | 日本碍子株式会社 | 自立基板、機能素子およびその製造方法 |
CN105483833A (zh) * | 2015-11-24 | 2016-04-13 | 北京华进创威电子有限公司 | 一种氮化铝单晶的位错腐蚀方法 |
JP6731590B2 (ja) * | 2016-05-02 | 2020-07-29 | 国立大学法人大阪大学 | 窒化物結晶基板の製造方法 |
CN108166059A (zh) * | 2017-12-21 | 2018-06-15 | 北京华进创威电子有限公司 | 一种氮化铝衬底制备及扩径生长方法 |
CN108085745A (zh) * | 2017-12-28 | 2018-05-29 | 北京华进创威电子有限公司 | 一种氮化铝晶体生长用同质衬底制备及扩径生长方法 |
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US5127983A (en) * | 1989-05-22 | 1992-07-07 | Sumitomo Electric Industries, Ltd. | Method of producing single crystal of high-pressure phase material |
JP3350992B2 (ja) * | 1993-02-05 | 2002-11-25 | 住友電気工業株式会社 | ダイヤモンドの合成方法 |
JP3968968B2 (ja) * | 2000-07-10 | 2007-08-29 | 住友電気工業株式会社 | 単結晶GaN基板の製造方法 |
JP4915128B2 (ja) * | 2005-04-11 | 2012-04-11 | 日亜化学工業株式会社 | 窒化物半導体ウエハ及びその製造方法 |
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