JP5254037B2 - 高電圧炭化ケイ素半導体デバイスのための環境的に堅固なパッシベーション構造 - Google Patents
高電圧炭化ケイ素半導体デバイスのための環境的に堅固なパッシベーション構造 Download PDFInfo
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- JP5254037B2 JP5254037B2 JP2008550321A JP2008550321A JP5254037B2 JP 5254037 B2 JP5254037 B2 JP 5254037B2 JP 2008550321 A JP2008550321 A JP 2008550321A JP 2008550321 A JP2008550321 A JP 2008550321A JP 5254037 B2 JP5254037 B2 JP 5254037B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 62
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 60
- 238000002161 passivation Methods 0.000 title claims description 51
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 51
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 51
- 239000001257 hydrogen Substances 0.000 claims description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 22
- 230000005684 electric field Effects 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- 230000007613 environmental effect Effects 0.000 claims description 6
- 230000003071 parasitic effect Effects 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 230000002265 prevention Effects 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
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- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Description
本発明は、高電圧で動作し、したがって高電場が存在する場合の、あるいは高電界を生成または受ける炭化ケイ素(SiC)ベースの半導体デバイスに関する。通常、かかるデバイスは、ショットキー(整流)ダイオード、金属酸化膜半導体電界効果トランジスタ(metal−oxide semiconductor field−effect transistor:MOSFET)、絶縁ゲートバイポーラトランジスタ(insulated gate bipolar transistor:IGBT)、PTNダイオード、バイポーラ接合トランジスタ(bipolar junction transistor:BJT)を含むが、それらに限定される必要はない。例えば(限定としてではなく)、SiCベースのパワーデバイスは、(切り替え)電力供給、モーター制御、電力調節、ハイブリッド車技術、安全装置および電力貯蔵に有利である。
本発明は、炭化ケイ素における高電界半導体デバイスのための改良された終端構造である。構造は、高電界動作のための炭化ケイ素ベースのデバイスと、該デバイスにおける活性領域と、該活性領域のためのエッジ終端パッシベーションとを含み、該エッジ終端パッシベーションは、表面状態を満足させ、界面密度を低下させるための該デバイスの炭化ケイ素部分の少なくとも一部分上の酸化物層と、水素の取り込みを回避するため、および寄生容量を減少させ、捕捉を最小化するための該酸化物層上の窒化ケイ素の非化学量論的層と、該非化学量論的層および該酸化物層を封入するための該非化学量論的層上の窒化ケイ素の化学量論的層と、を含む。
図1は、概して10で示されたショットキーダイオードの断面概略図であり、本発明が対応する最近発見された問題を例証する。ショットキーダイオードは比較的単純(より少ない要素)な電子デバイスであるため、例証目的としては便利であるが、本発明は、種々のデバイスにうまく組み込むことができ、本明細書において記述されるものに制限されないことを理解されたい。
Claims (36)
- 炭化ケイ素における高電界半導体デバイスのための改良された終端構造であって、
高電界動作のための炭化ケイ素ベースのデバイスと、
前記炭化ケイ素ベースのデバイスにおける活性領域と、
前記活性領域のためのエッジ終端パッシベーションと
を含み、
前記エッジ終端パッシベーションは、
前記炭化ケイ素ベースのデバイスの少なくともいくつかの炭化ケイ素部分の上の酸化物層であって、表面状態を満足させ、界面密度を低下させるための酸化物層と、
前記酸化物層上の窒化ケイ素の非化学量論的層であって、水素の取り込みを回避するため、および、寄生容量を減少させ、捕捉を最小化するための窒化ケイ素の非化学量論的層と、
前記非化学量論的層上の窒化ケイ素の化学量論的層であって、前記非化学量論的層および前記酸化物層を封入するための窒化ケイ素の化学量論的層と
を含む、改良された終端構造。 - 単結晶であり、炭化ケイ素の3Cポリタイプ、4Hポリタイプ、6Hポリタイプ、15Rポリタイプから成る群から選択されるポリタイプを有する炭化ケイ素部分を含む、請求項1に記載の終端構造。
- 前記半導体デバイスは、ショットキーダイオード、金属酸化膜半導体電界効果トランジスタ、絶縁ゲートバイポーラトランジスタ、PINダイオード、バイポーラ接合トランジスタ、サイリスタから成る群から選択される、請求項1に記載の終端構造を取り込む、半導体デバイス。
- 前記活性領域は、
炭化ケイ素エピタキシャル層上のショットキー金属と、
前記炭化ケイ素エピタキシャル層を支持する炭化ケイ素基板と
を含む、請求項3に記載のショットキーダイオード。 - 前記炭化ケイ素エピタキシャルおよび前記炭化ケイ素基板は、どちらもn型であり、
前記ショットキー金属は、ニッケル、クロム、チタン、白金から成る群から選択される、請求項4に記載のショットキーダイオード。 - ソース接触部とゲート接触部とドレイン接触部とを含み、
前記エッジ終端パッシベーションは、前記接触部のうちの少なくとも1つに隣接する、請求項3に記載のMOSFET。 - 請求項6に記載のpチャネルMOSFET。
- 請求項6に記載のnチャネルMOSFET。
- ベース接触部とエミッタ接触部とコレクタ接触部とを含み、
前記エッジ終端パッシベーションは、前記接触部のうちの少なくとも1つに隣接する、請求項3に記載のバイポーラ接合トランジスタ。 - 請求項9に記載のn−p−nバイポーラ接合トランジスタ。
- 請求項9に記載のp−n−pバイポーラ接合トランジスタ。
- ベース接触部とエミッタ接触部とコレクタ接触部とを含み、
前記エッジ終端パッシベーションは、前記接触部のうちの少なくとも1つに隣接する、請求項3に記載の絶縁ゲートバイポーラトランジスタ。 - n型ドリフト領域を含む、請求項12に記載の絶縁ゲートバイポーラトランジスタ。
- p型ドリフト領域を含む、請求項12に記載の絶縁ゲートバイポーラトランジスタ。
- アノード接触部とカソード接触部とゲート接触部とを含み、
前記エッジ終端パッシベーションは、前記接触部のうちの少なくとも1つに隣接する、請求項3に記載のサイリスタ。 - アノード接触部とカソード接触部とを含み、
前記エッジ終端パッシベーションは、前記アノード接触部およびカソード接触部のうちの少なくとも1つに隣接する、請求項3に記載のp−i−nダイオード。 - 前記酸化物層は、熱酸化層である、請求項1に記載の終端構造。
- 前記熱酸化層は、約100から500オングストロームの厚さを有する二酸化ケイ素である、請求項17に記載の終端構造。
- 前記窒化ケイ素の非化学量論的層は、実質的に水素を含まない、請求項1に記載の終端構造。
- 前記窒化ケイ素の非化学量論的層は、約1000から2000オングストロームの厚さである、請求項1に記載の終端構造。
- 前記窒化ケイ素の非化学量論的層は、約1.85から1.95の屈折率を有する、請求項1に記載の終端構造。
- 前記窒化ケイ素の化学量論的層は、実質的に水素を含まない、請求項1に記載の終端構造。
- 炭化ケイ素における高電界半導体デバイスのための改良された終端構造であって、
高電界動作のための炭化ケイ素ベースのデバイスと、
前記炭化ケイ素ベースのデバイスにおける活性領域と、
前記活性領域のためのエッジ終端パッシベーションと
を含み、
前記エッジ終端パッシベーションは、
前記活性領域に隣接する炭化ケイ素部分上の酸化膜であって、前記炭化ケイ素部分と前記酸化膜との界面密度を低下させるための酸化膜と、
前記酸化膜上の第1のスパッタ非化学量論的窒化ケイ素層であって、寄生容量を減少させ、デバイス捕捉を最小化するための第1のスパッタ非化学量論的窒化ケイ素層と、
前記第1のスパッタ非化学量論的窒化ケイ素層上の第2のスパッタ非化学量論的窒化ケイ素層であって、前記終端構造を封入せずに、さらに基板から後続のパッシベーション層を位置付けるための第2のスパッタ非化学量論的窒化ケイ素層と、
前記第2のスパッタ非化学量論的窒化ケイ素層上のスパッタ化学量論的窒化ケイ素層であって、前記終端構造を封入し、前記後続のパッシベーション層の水素遮断性を向上させるためのスパッタ化学量論的窒化ケイ素層と、
前記スパッタ化学量論的窒化ケイ素層上の化学量論的窒化ケイ素の化学気相蒸着した環境障壁層であって、段差被覆および亀裂防止のための化学量論的窒化ケイ素の化学気相蒸着した環境障壁層と
を含む、改良された終端構造。 - 前記酸化膜は、熱酸化層である、請求項23に記載のパッシベーションされた半導体構造。
- 前記酸化層は、約100から500オングストロームの厚さを有する二酸化ケイ素である、請求項23に記載のパッシベーションされた半導体構造。
- 前記第1のスパッタ非化学量論的窒化ケイ素層は、実質的に水素を含まない、請求項23に記載のパッシベーションされた半導体構造。
- 前記第1のスパッタ非化学量論的窒化ケイ素層は、約1000から2000オングストロームの厚さである、請求項23に記載のパッシベーションされた半導体構造。
- 前記第1のスパッタ非化学量論的窒化ケイ素層は、約1.85から1.95の屈折率を有する、請求項23に記載のパッシベーションされた半導体構造。
- 前記第2のスパッタ非化学量論的窒化ケイ素層は、実質的に水素を含まない、請求項23に記載のパッシベーションされた半導体構造。
- 前記第2のスパッタ非化学量論的窒化ケイ素層は、約1000から3000オングストロームの厚さである、請求項23に記載のパッシベーションされた半導体構造。
- 前記第2のスパッタ非化学量論的窒化ケイ素層は、約1.85から1.95の屈折率を有する、請求項23に記載のパッシベーションされた半導体構造。
- 前記スパッタ化学量論的窒化ケイ素層は、約1000から3000オングストロームの厚さである、請求項23に記載のパッシベーションされた半導体構造。
- 前記スパッタ化学量論的窒化ケイ素層は、実質的に水素を含まない、請求項23に記載のパッシベーションされた半導体構造。
- 前記化学気相蒸着した環境障壁層は、約2000から5000オングストロームである、請求項23に記載のパッシベーションされた半導体構造。
- 前記化学気相蒸着した環境障壁層および前記スパッタ化学量論的窒化ケイ素層は、どちらもSi3N4を含む、請求項23に記載のパッシベーションされた半導体構造。
- 前記基板は、炭化ケイ素の3Cポリタイプ、4Hポリタイプ、6Hポリタイプ、15Rポリタイプから成る群から選択されるポリタイプを有する単結晶炭化ケイ素基板である、請求項23に記載のパッシベーションされた半導体構造。
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2006
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EP1972013B1 (en) | 2010-06-09 |
WO2007081528A8 (en) | 2008-10-02 |
US20070001176A1 (en) | 2007-01-04 |
CN101356649B (zh) | 2010-04-14 |
EP1972013A2 (en) | 2008-09-24 |
WO2007081528A2 (en) | 2007-07-19 |
DE602006014871D1 (de) | 2010-07-22 |
KR101012713B1 (ko) | 2011-02-09 |
JP2009522823A (ja) | 2009-06-11 |
KR20080075224A (ko) | 2008-08-14 |
ATE470955T1 (de) | 2010-06-15 |
CN101356649A (zh) | 2009-01-28 |
US20070018272A1 (en) | 2007-01-25 |
US7598576B2 (en) | 2009-10-06 |
US7696584B2 (en) | 2010-04-13 |
WO2007081528A3 (en) | 2007-09-20 |
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