DE602006014871D1 - Umweltverträgliche passivierungsstrukturen für hochspannungs-siliciumcarbid-halbleiterbauelemente - Google Patents
Umweltverträgliche passivierungsstrukturen für hochspannungs-siliciumcarbid-halbleiterbauelementeInfo
- Publication number
- DE602006014871D1 DE602006014871D1 DE602006014871T DE602006014871T DE602006014871D1 DE 602006014871 D1 DE602006014871 D1 DE 602006014871D1 DE 602006014871 T DE602006014871 T DE 602006014871T DE 602006014871 T DE602006014871 T DE 602006014871T DE 602006014871 D1 DE602006014871 D1 DE 602006014871D1
- Authority
- DE
- Germany
- Prior art keywords
- high voltage
- silicon carbide
- semiconductor elements
- carbide semiconductor
- voltage silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000002161 passivation Methods 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
- 239000000463 material Substances 0.000 abstract 3
Classifications
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/045—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide passivating silicon carbide surfaces
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/328,550 US7598576B2 (en) | 2005-06-29 | 2006-01-10 | Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
PCT/US2006/048817 WO2007081528A2 (en) | 2006-01-10 | 2006-12-21 | Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006014871D1 true DE602006014871D1 (de) | 2010-07-22 |
Family
ID=38117229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006014871T Active DE602006014871D1 (de) | 2006-01-10 | 2006-12-21 | Umweltverträgliche passivierungsstrukturen für hochspannungs-siliciumcarbid-halbleiterbauelemente |
Country Status (8)
Country | Link |
---|---|
US (2) | US7598576B2 (de) |
EP (1) | EP1972013B1 (de) |
JP (1) | JP5254037B2 (de) |
KR (1) | KR101012713B1 (de) |
CN (1) | CN101356649B (de) |
AT (1) | ATE470955T1 (de) |
DE (1) | DE602006014871D1 (de) |
WO (1) | WO2007081528A2 (de) |
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US7855401B2 (en) * | 2005-06-29 | 2010-12-21 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
US7525122B2 (en) * | 2005-06-29 | 2009-04-28 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
EP1746661A1 (de) * | 2005-07-22 | 2007-01-24 | ABB Technology AG | Leistungshalbleiteranordnung |
US8178843B2 (en) * | 2005-12-01 | 2012-05-15 | Bae Systems Information And Electronic Systems Integration Inc. | Polycrystalline heterostructure infrared detector |
JP5294238B2 (ja) * | 2007-08-28 | 2013-09-18 | 独立行政法人物質・材料研究機構 | 電子素子 |
JP5446161B2 (ja) * | 2007-08-31 | 2014-03-19 | 住友電気工業株式会社 | ショットキーバリアダイオードおよびその製造方法 |
JP5541842B2 (ja) * | 2008-03-18 | 2014-07-09 | 新電元工業株式会社 | 炭化珪素ショットキダイオード |
JP5445899B2 (ja) * | 2008-08-26 | 2014-03-19 | 住友電気工業株式会社 | ショットキーバリアダイオード |
US7800196B2 (en) * | 2008-09-30 | 2010-09-21 | Northrop Grumman Systems Corporation | Semiconductor structure with an electric field stop layer for improved edge termination capability |
EP2448378A1 (de) | 2010-10-26 | 2012-05-02 | ATOTECH Deutschland GmbH | Verbundtoffbaumaterialien zum Einbetten aktiver Komponenten |
US20130334501A1 (en) * | 2011-09-15 | 2013-12-19 | The Regents Of The University Of California | Field-Effect P-N Junction |
KR101279199B1 (ko) * | 2011-09-21 | 2013-06-26 | 주식회사 케이이씨 | 반도체 소자 및 이의 제조 방법 |
US9991399B2 (en) | 2012-10-04 | 2018-06-05 | Cree, Inc. | Passivation structure for semiconductor devices |
US8994073B2 (en) | 2012-10-04 | 2015-03-31 | Cree, Inc. | Hydrogen mitigation schemes in the passivation of advanced devices |
US9812338B2 (en) | 2013-03-14 | 2017-11-07 | Cree, Inc. | Encapsulation of advanced devices using novel PECVD and ALD schemes |
JP2014138111A (ja) * | 2013-01-17 | 2014-07-28 | Fujitsu Ltd | 半導体装置及びその製造方法、電源装置、高周波増幅器 |
JP6069059B2 (ja) * | 2013-03-22 | 2017-01-25 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
US9425153B2 (en) | 2013-04-04 | 2016-08-23 | Monolith Semiconductor Inc. | Semiconductor devices comprising getter layers and methods of making and using the same |
GB2516425B (en) * | 2013-07-17 | 2015-12-30 | Gurulogic Microsystems Oy | Encoder and decoder, and method of operation |
US9590048B2 (en) | 2013-10-31 | 2017-03-07 | Infineon Technologies Austria Ag | Electronic device |
US9123791B2 (en) | 2014-01-09 | 2015-09-01 | Infineon Technologies Austria Ag | Semiconductor device and method |
US20150255362A1 (en) | 2014-03-07 | 2015-09-10 | Infineon Technologies Ag | Semiconductor Device with a Passivation Layer and Method for Producing Thereof |
US9401708B2 (en) | 2014-05-20 | 2016-07-26 | General Electric Company | Gate drive unit and method for controlling a gate drive unit |
JP2016081981A (ja) * | 2014-10-14 | 2016-05-16 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
JP2017017145A (ja) * | 2015-06-30 | 2017-01-19 | 株式会社東芝 | 半導体装置 |
CN105185820B (zh) * | 2015-08-18 | 2017-12-12 | 华中科技大学 | 一种基于碳化硅的半导体断路开关及其制备方法 |
JP6300773B2 (ja) | 2015-10-23 | 2018-03-28 | 三菱電機株式会社 | 半導体圧力センサ |
CN108475665B (zh) * | 2015-11-05 | 2022-05-27 | 日立能源瑞士股份公司 | 功率半导体器件 |
CN106409663A (zh) * | 2016-06-20 | 2017-02-15 | 中国工程物理研究院电子工程研究所 | 一种制备高阻断电压碳化硅功率器件的方法 |
EP3267187B1 (de) * | 2016-07-08 | 2020-04-15 | Volvo Car Corporation | Siliciumcarbidbasierter feldeffektgassensor für hochtemperaturanwendungen |
KR102419085B1 (ko) * | 2016-09-26 | 2022-07-07 | 한국전기연구원 | 전력 반도체 소자 |
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JP2019145616A (ja) * | 2018-02-19 | 2019-08-29 | 株式会社東芝 | 半導体装置 |
DE102018121897A1 (de) | 2018-09-07 | 2020-03-12 | Infineon Technologies Ag | Halbleitervorrichtung mit einem silizium und stickstoff enthaltenden bereich und herstellungsverfahren |
DE102019131238A1 (de) | 2018-12-06 | 2020-06-10 | Infineon Technologies Ag | Passivierungsstruktur enthaltende halbleitervorrichtung und herstellungsverfahren |
CN110752256B (zh) * | 2019-10-22 | 2021-04-06 | 深圳第三代半导体研究院 | 一种碳化硅肖特基钳位晶体管及其制备方法 |
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-
2006
- 2006-01-10 US US11/328,550 patent/US7598576B2/en active Active
- 2006-08-02 US US11/462,016 patent/US7696584B2/en active Active
- 2006-12-21 KR KR1020087016786A patent/KR101012713B1/ko active IP Right Grant
- 2006-12-21 CN CN2006800508116A patent/CN101356649B/zh active Active
- 2006-12-21 AT AT06847921T patent/ATE470955T1/de not_active IP Right Cessation
- 2006-12-21 JP JP2008550321A patent/JP5254037B2/ja active Active
- 2006-12-21 EP EP06847921A patent/EP1972013B1/de active Active
- 2006-12-21 WO PCT/US2006/048817 patent/WO2007081528A2/en active Application Filing
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Also Published As
Publication number | Publication date |
---|---|
WO2007081528A2 (en) | 2007-07-19 |
US7696584B2 (en) | 2010-04-13 |
KR20080075224A (ko) | 2008-08-14 |
US7598576B2 (en) | 2009-10-06 |
KR101012713B1 (ko) | 2011-02-09 |
CN101356649B (zh) | 2010-04-14 |
EP1972013B1 (de) | 2010-06-09 |
US20070018272A1 (en) | 2007-01-25 |
ATE470955T1 (de) | 2010-06-15 |
CN101356649A (zh) | 2009-01-28 |
WO2007081528A8 (en) | 2008-10-02 |
JP2009522823A (ja) | 2009-06-11 |
US20070001176A1 (en) | 2007-01-04 |
EP1972013A2 (de) | 2008-09-24 |
WO2007081528A3 (en) | 2007-09-20 |
JP5254037B2 (ja) | 2013-08-07 |
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