SE0500865L - Halvledaranordning av kiselkarbid - Google Patents

Halvledaranordning av kiselkarbid

Info

Publication number
SE0500865L
SE0500865L SE0500865A SE0500865A SE0500865L SE 0500865 L SE0500865 L SE 0500865L SE 0500865 A SE0500865 A SE 0500865A SE 0500865 A SE0500865 A SE 0500865A SE 0500865 L SE0500865 L SE 0500865L
Authority
SE
Sweden
Prior art keywords
disposed
drift layer
semiconductor device
silicon carbide
carbide semiconductor
Prior art date
Application number
SE0500865A
Other languages
English (en)
Other versions
SE527922C2 (sv
Inventor
Eiichi Okuno
Hideo Matsuki
Jun Kojima
Takeshi Endo
Yoshihito Mitsuoka
Yoshiyuki Hisada
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004122796A external-priority patent/JP4635470B2/ja
Priority claimed from JP2004185521A external-priority patent/JP2006013005A/ja
Application filed by Denso Corp filed Critical Denso Corp
Publication of SE0500865L publication Critical patent/SE0500865L/sv
Publication of SE527922C2 publication Critical patent/SE527922C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
SE0500865A 2004-04-19 2005-04-19 Halvledaranordning av kiselkarbid SE527922C2 (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004122796A JP4635470B2 (ja) 2004-04-19 2004-04-19 炭化珪素半導体装置およびその製造方法
JP2004185521A JP2006013005A (ja) 2004-06-23 2004-06-23 炭化珪素半導体基板およびその製造方法

Publications (2)

Publication Number Publication Date
SE0500865L true SE0500865L (sv) 2005-10-20
SE527922C2 SE527922C2 (sv) 2006-07-11

Family

ID=35095381

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0500865A SE527922C2 (sv) 2004-04-19 2005-04-19 Halvledaranordning av kiselkarbid

Country Status (3)

Country Link
US (2) US7365363B2 (sv)
DE (1) DE102005017814B4 (sv)
SE (1) SE527922C2 (sv)

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JP4939797B2 (ja) * 2005-11-01 2012-05-30 ルネサスエレクトロニクス株式会社 スイッチング半導体装置
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JP5017865B2 (ja) * 2006-01-17 2012-09-05 富士電機株式会社 半導体装置
CA2636776A1 (en) * 2006-01-30 2007-08-02 Sumitomo Electric Industries, Ltd. Method of manufacturing silicon carbide semiconductor device
US7728402B2 (en) * 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
KR101529331B1 (ko) * 2006-08-17 2015-06-16 크리 인코포레이티드 고전력 절연 게이트 바이폴라 트랜지스터
EP2264223A3 (en) 2006-09-14 2011-10-26 Cree, Inc. Micropipe-free silicon carbide and related method of manufacture
JP5071763B2 (ja) 2006-10-16 2012-11-14 独立行政法人産業技術総合研究所 炭化ケイ素半導体装置およびその製造方法
JP5098295B2 (ja) * 2006-10-30 2012-12-12 株式会社デンソー 炭化珪素半導体装置の製造方法
JP2008112834A (ja) * 2006-10-30 2008-05-15 Sumitomo Electric Ind Ltd 炭化ケイ素半導体装置の製造方法
JP5098294B2 (ja) * 2006-10-30 2012-12-12 株式会社デンソー 炭化珪素半導体装置の製造方法
KR20090089362A (ko) * 2006-11-10 2009-08-21 스미토모덴키고교가부시키가이샤 탄화규소 반도체 장치 및 그 제조 방법
US8198675B2 (en) 2006-11-21 2012-06-12 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device and method of manufacturing the same
JP4046140B1 (ja) * 2006-11-29 2008-02-13 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US8835987B2 (en) * 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US7981709B2 (en) * 2007-04-05 2011-07-19 Sumitomo Electric Industries, Ltd. Semiconductor device and method for fabricating the same
JP2008294171A (ja) * 2007-05-24 2008-12-04 Oki Electric Ind Co Ltd 半導体デバイス及びその製造方法
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
JP2010098189A (ja) * 2008-10-17 2010-04-30 Toshiba Corp 半導体装置
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JP4978637B2 (ja) * 2009-02-12 2012-07-18 株式会社デンソー 炭化珪素単結晶の製造方法
CN102414818B (zh) 2009-04-30 2013-03-20 松下电器产业株式会社 半导体元件、半导体装置及电力变换器
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) * 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) * 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8283973B2 (en) 2009-08-19 2012-10-09 Panasonic Corporation Semiconductor element, semiconductor device, and electric power converter
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
EP2490247A1 (en) * 2009-10-13 2012-08-22 Sumitomo Electric Industries, Ltd. Silicon carbide substrate manufacturing method and silicon carbide substrate
JP5439215B2 (ja) * 2010-02-10 2014-03-12 株式会社東芝 半導体装置および半導体装置の製造方法
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
JP2011228643A (ja) * 2010-03-30 2011-11-10 Shindengen Electric Mfg Co Ltd 半導体装置及びその製造方法
JP5616665B2 (ja) 2010-03-30 2014-10-29 ローム株式会社 半導体装置
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
KR101063935B1 (ko) 2010-07-16 2011-09-14 한국전기연구원 자기정렬법을 이용한 탄화규소 전계효과 트랜지스터 소자의 제조방법
CN102122666B (zh) * 2011-01-13 2012-11-28 电子科技大学 使用高介电常数栅介质的耐压器件
WO2012131898A1 (ja) * 2011-03-29 2012-10-04 株式会社日立製作所 炭化珪素半導体装置
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
DE112012002299T5 (de) * 2011-06-02 2014-05-15 Sumitomo Electric Industries, Ltd. Verfahren zum Herstellen eines Siliziumkarbidsubstrates
CN103918079B (zh) 2011-09-11 2017-10-31 科锐 包括具有改进布局的晶体管的高电流密度功率模块
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
JP5464192B2 (ja) * 2011-09-29 2014-04-09 株式会社デンソー 半導体装置の製造方法
JP6082911B2 (ja) * 2012-06-08 2017-02-22 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及び薄膜トランジスタの製造方法
JP6285668B2 (ja) * 2013-09-03 2018-02-28 株式会社東芝 半導体装置及びその製造方法
US9449853B2 (en) * 2013-09-04 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising electron trap layer
US10014176B2 (en) * 2014-11-18 2018-07-03 Toyo Tanso Co., Ltd. SiC substrate treatment method
KR101960209B1 (ko) 2015-02-18 2019-03-19 쇼와 덴코 가부시키가이샤 탄화규소 단결정 잉곳의 제조 방법 및 탄화규소 단결정 잉곳
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JP6768492B2 (ja) * 2016-12-26 2020-10-14 昭和電工株式会社 ＳｉＣインゴットの製造方法
CN106847879B (zh) * 2017-01-19 2021-12-03 北京世纪金光半导体有限公司 一种斜面沟道的SiC MOSFET器件及制备方法
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Also Published As

Publication number Publication date
DE102005017814B4 (de) 2016-08-11
DE102005017814A1 (de) 2005-12-22
US7968892B2 (en) 2011-06-28
US7365363B2 (en) 2008-04-29
US20050230686A1 (en) 2005-10-20
US20070281173A1 (en) 2007-12-06
SE527922C2 (sv) 2006-07-11

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