JP6082911B2 - 薄膜トランジスタ及び薄膜トランジスタの製造方法 - Google Patents
薄膜トランジスタ及び薄膜トランジスタの製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 147
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000010410 layer Substances 0.000 claims description 425
- 239000004065 semiconductor Substances 0.000 claims description 206
- 239000010408 film Substances 0.000 claims description 117
- 239000000758 substrate Substances 0.000 claims description 39
- 230000007547 defect Effects 0.000 claims description 34
- 238000001312 dry etching Methods 0.000 claims description 33
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- 229910052799 carbon Inorganic materials 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 21
- 239000000460 chlorine Substances 0.000 claims description 17
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 15
- 229910052801 chlorine Inorganic materials 0.000 claims description 15
- 239000011368 organic material Substances 0.000 claims description 13
- 239000002344 surface layer Substances 0.000 claims description 8
- 230000004075 alteration Effects 0.000 claims description 5
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- 239000011241 protective layer Substances 0.000 description 119
- 229910021417 amorphous silicon Inorganic materials 0.000 description 44
- 229910021419 crystalline silicon Inorganic materials 0.000 description 33
- 238000005401 electroluminescence Methods 0.000 description 28
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- 238000010586 diagram Methods 0.000 description 22
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000001257 hydrogen Substances 0.000 description 14
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- 238000005530 etching Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000000059 patterning Methods 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
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- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000004364 calculation method Methods 0.000 description 7
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- 230000002093 peripheral effect Effects 0.000 description 6
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- 238000003917 TEM image Methods 0.000 description 4
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- 229910052698 phosphorus Inorganic materials 0.000 description 4
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
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- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 3
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 238000002425 crystallisation Methods 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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- 239000011734 sodium Substances 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Description
以下、本発明の実施の形態に係る薄膜トランジスタ及びその製造方法について、図面を参照しながら説明する。なお、以下で説明する実施の形態は、いずれも本発明の好ましい一具体例を示すものである。したがって、以下の実施の形態で示される数値、形状、材料、構成要素、構成要素の配置位置および接続形態、ステップ、ステップの順序などは、一例であって本発明を限定する主旨ではない。よって、以下の実施の形態における構成要素のうち、本発明の最上位概念を示す独立請求項に記載されていない構成要素については、本発明の課題を達成するのに必ずしも必要ではないが、より好ましい形態を構成するものとして説明される。
次に、本発明の実施の形態の変形例に係る薄膜トランジスタ10Aについて、図12を用いて説明する。図12は、本発明の実施の形態の変形例に係る薄膜トランジスタの構成を模式的に示した図であり、(a)は(b)のA−A’線の断面図、(b)は透過平面図である。
以上、本発明に係る薄膜トランジスタ及び薄膜トランジスタの製造方法について、実施の形態及び変形例に基づいて説明したが、本発明は上記の実施の形態及び変形例に限定されるものではない。
2、31G、32G ゲート電極
3 ゲート絶縁層
4 結晶質シリコン半導体層
4F 結晶質シリコン半導体膜
5 非晶質シリコン半導体層
5F 非晶質シリコン半導体膜
6、6A 保護層
7 コンタクト層
7F コンタクト層用膜
8S、31S、32S ソース電極
8D、31D、32D ドレイン電極
8F ソースドレイン金属膜
9 パッシベーション層
10、10A 薄膜トランジスタ
20 有機EL表示装置
21 アクティブマトリクス基板
22 画素
23 有機EL素子
24 陽極
25 有機EL層
26 陰極
27 ゲート線
28 ソース線
29 電源線
31 駆動トランジスタ
32 スイッチングトランジスタ
33 コンデンサ
40 半導体層
40F 半導体膜
61 非変質層
62 変質層
Claims (10)
- 基板上に位置するゲート電極と、
前記ゲート電極上に位置するゲート絶縁層と、
前記ゲート絶縁層を間に介して、前記ゲート電極と対向する半導体層と、
前記半導体層上に位置する、有機材料を含むエッチストッパ層と、
互いに対向して配置され、前記エッチストッパ層上に少なくとも一部が位置するソース電極及びドレイン電極と、を備え、
前記エッチストッパ層は、前記ソース電極及び前記ドレイン電極から露出した領域における表面層が変質することによって生成された、少なくとも一部が前記半導体層と接する変質層を有し、
前記変質層は、前記エッチストッパ層の材料と前記半導体層を区画するときのドライエッチングの原料ガスとが結びついた層であり、
前記半導体層の欠陥密度をNt(cm−3)とし、前記エッチストッパ層における前記ソース電極及び前記ドレイン電極から露出した領域の端部のテーパ角をθ(°)とすると、
Log10Nt≦0.0556θ+16.86
の関係式を満たす、
薄膜トランジスタ。 - 前記変質層は、膜厚が30nm以上である、
請求項1に記載の薄膜トランジスタ。 - 前記変質層の密度は、前記エッチストッパ層のうち前記ドライエッチングにより変質しなかった部分である非変質層の密度よりも高い、
請求項1又は2に記載の薄膜トランジスタ。 - 前記変質層に含まれる塩素の濃度は、前記非変質層に含まれる塩素の濃度の少なくとも10倍以上である、
請求項3に記載の薄膜トランジスタ。 - 前記変質層に含まれる炭素の濃度は、前記非変質層に含まれる炭素の濃度の少なくとも1/100以下である、
請求項3又は4に記載の薄膜トランジスタ。 - 基板を準備する工程と、
前記基板上にゲート電極を形成する工程と、
前記ゲート電極上にゲート絶縁層を形成する工程と、
前記ゲート絶縁層上に半導体膜を形成する工程と、
前記半導体膜上に有機材料を含むエッチストッパ層を形成する工程と、
前記エッチストッパ層上に少なくとも一部が位置するように、ソース電極及びドレイン電極を互いに対向配置して形成する工程と、
前記半導体膜をドライエッチングして、区画された半導体層を形成する工程と、を含み、
前記半導体層を形成する工程において、前記エッチストッパ層は、前記ドライエッチングによって、当該エッチストッパ層の前記ソース電極及び前記ドレイン電極から露出した領域における表面層が変質層に変質するとともに、前記露出した領域の端部がテーパ角を有するようにエッチングされ、
前記半導体層の欠陥密度をNt(cm−3)とし、前記テーパ角をθ(°)とすると、
Log10Nt≦0.0556θ+16.86
の関係式を満たす、
薄膜トランジスタの製造方法。 - 前記変質層は、膜厚が30nm以上である、
請求項6に記載の薄膜トランジスタの製造方法。 - 前記変質層の密度は、前記エッチストッパ層のうち前記ドライエッチングにより変質しなかった部分である非変質層の密度よりも高い、
請求項6又は7に記載の薄膜トランジスタの製造方法。 - 前記変質層に含まれる塩素の濃度は、前記非変質層に含まれる塩素の濃度の少なくとも10倍以上である、
請求項8に記載の薄膜トランジスタの製造方法。 - 前記変質層に含まれる炭素の濃度は、前記非変質層に含まれる炭素の濃度の少なくとも1/100以下である、
請求項8又は9に記載の薄膜トランジスタの製造方法。
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