ATE470955T1 - Umweltverträgliche passivierungsstrukturen für hochspannungs-siliciumcarbid- halbleiterbauelemente - Google Patents

Umweltverträgliche passivierungsstrukturen für hochspannungs-siliciumcarbid- halbleiterbauelemente

Info

Publication number
ATE470955T1
ATE470955T1 AT06847921T AT06847921T ATE470955T1 AT E470955 T1 ATE470955 T1 AT E470955T1 AT 06847921 T AT06847921 T AT 06847921T AT 06847921 T AT06847921 T AT 06847921T AT E470955 T1 ATE470955 T1 AT E470955T1
Authority
AT
Austria
Prior art keywords
high voltage
silicon carbide
environmentally friendly
semiconductor components
carbide semiconductor
Prior art date
Application number
AT06847921T
Other languages
English (en)
Inventor
Iii Allan Ward
Jason Henning
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE470955T1 publication Critical patent/ATE470955T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/045—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide passivating silicon carbide surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AT06847921T 2006-01-10 2006-12-21 Umweltverträgliche passivierungsstrukturen für hochspannungs-siliciumcarbid- halbleiterbauelemente ATE470955T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/328,550 US7598576B2 (en) 2005-06-29 2006-01-10 Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
PCT/US2006/048817 WO2007081528A2 (en) 2006-01-10 2006-12-21 Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices

Publications (1)

Publication Number Publication Date
ATE470955T1 true ATE470955T1 (de) 2010-06-15

Family

ID=38117229

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06847921T ATE470955T1 (de) 2006-01-10 2006-12-21 Umweltverträgliche passivierungsstrukturen für hochspannungs-siliciumcarbid- halbleiterbauelemente

Country Status (8)

Country Link
US (2) US7598576B2 (de)
EP (1) EP1972013B1 (de)
JP (1) JP5254037B2 (de)
KR (1) KR101012713B1 (de)
CN (1) CN101356649B (de)
AT (1) ATE470955T1 (de)
DE (1) DE602006014871D1 (de)
WO (1) WO2007081528A2 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7525122B2 (en) * 2005-06-29 2009-04-28 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
EP1746661A1 (de) * 2005-07-22 2007-01-24 ABB Technology AG Leistungshalbleiteranordnung
US8178843B2 (en) * 2005-12-01 2012-05-15 Bae Systems Information And Electronic Systems Integration Inc. Polycrystalline heterostructure infrared detector
JP5294238B2 (ja) * 2007-08-28 2013-09-18 独立行政法人物質・材料研究機構 電子素子
JP5446161B2 (ja) * 2007-08-31 2014-03-19 住友電気工業株式会社 ショットキーバリアダイオードおよびその製造方法
JP5541842B2 (ja) * 2008-03-18 2014-07-09 新電元工業株式会社 炭化珪素ショットキダイオード
JP5445899B2 (ja) * 2008-08-26 2014-03-19 住友電気工業株式会社 ショットキーバリアダイオード
US7800196B2 (en) * 2008-09-30 2010-09-21 Northrop Grumman Systems Corporation Semiconductor structure with an electric field stop layer for improved edge termination capability
EP2448378A1 (de) 2010-10-26 2012-05-02 ATOTECH Deutschland GmbH Verbundtoffbaumaterialien zum Einbetten aktiver Komponenten
US20130334501A1 (en) * 2011-09-15 2013-12-19 The Regents Of The University Of California Field-Effect P-N Junction
KR101279199B1 (ko) * 2011-09-21 2013-06-26 주식회사 케이이씨 반도체 소자 및 이의 제조 방법
US8994073B2 (en) 2012-10-04 2015-03-31 Cree, Inc. Hydrogen mitigation schemes in the passivation of advanced devices
US9812338B2 (en) 2013-03-14 2017-11-07 Cree, Inc. Encapsulation of advanced devices using novel PECVD and ALD schemes
US9991399B2 (en) 2012-10-04 2018-06-05 Cree, Inc. Passivation structure for semiconductor devices
JP2014138111A (ja) * 2013-01-17 2014-07-28 Fujitsu Ltd 半導体装置及びその製造方法、電源装置、高周波増幅器
JP6069059B2 (ja) * 2013-03-22 2017-01-25 住友電気工業株式会社 炭化珪素半導体装置
US9425153B2 (en) * 2013-04-04 2016-08-23 Monolith Semiconductor Inc. Semiconductor devices comprising getter layers and methods of making and using the same
GB2516425B (en) * 2013-07-17 2015-12-30 Gurulogic Microsystems Oy Encoder and decoder, and method of operation
US9590048B2 (en) 2013-10-31 2017-03-07 Infineon Technologies Austria Ag Electronic device
US9123791B2 (en) 2014-01-09 2015-09-01 Infineon Technologies Austria Ag Semiconductor device and method
US20150255362A1 (en) 2014-03-07 2015-09-10 Infineon Technologies Ag Semiconductor Device with a Passivation Layer and Method for Producing Thereof
US9401708B2 (en) 2014-05-20 2016-07-26 General Electric Company Gate drive unit and method for controlling a gate drive unit
JP2016081981A (ja) * 2014-10-14 2016-05-16 株式会社日立製作所 半導体装置及びその製造方法
JP2017017145A (ja) * 2015-06-30 2017-01-19 株式会社東芝 半導体装置
CN105185820B (zh) * 2015-08-18 2017-12-12 华中科技大学 一种基于碳化硅的半导体断路开关及其制备方法
JP6300773B2 (ja) 2015-10-23 2018-03-28 三菱電機株式会社 半導体圧力センサ
CN108475665B (zh) 2015-11-05 2022-05-27 日立能源瑞士股份公司 功率半导体器件
CN106409663A (zh) * 2016-06-20 2017-02-15 中国工程物理研究院电子工程研究所 一种制备高阻断电压碳化硅功率器件的方法
EP3267187B1 (de) * 2016-07-08 2020-04-15 Volvo Car Corporation Siliciumcarbidbasierter feldeffektgassensor für hochtemperaturanwendungen
KR102419085B1 (ko) * 2016-09-26 2022-07-07 한국전기연구원 전력 반도체 소자
US9998109B1 (en) 2017-05-15 2018-06-12 Cree, Inc. Power module with improved reliability
JP2019145616A (ja) 2018-02-19 2019-08-29 株式会社東芝 半導体装置
DE102018121897A1 (de) * 2018-09-07 2020-03-12 Infineon Technologies Ag Halbleitervorrichtung mit einem silizium und stickstoff enthaltenden bereich und herstellungsverfahren
DE102019131238A1 (de) 2018-12-06 2020-06-10 Infineon Technologies Ag Passivierungsstruktur enthaltende halbleitervorrichtung und herstellungsverfahren
CN110752256B (zh) * 2019-10-22 2021-04-06 深圳第三代半导体研究院 一种碳化硅肖特基钳位晶体管及其制备方法
FR3107988B1 (fr) * 2020-03-05 2023-11-10 St Microelectronics Tours Sas Formation d'un thyristor, triac ou diode de suppression de tensions transitoires
CN112309840A (zh) * 2020-09-27 2021-02-02 东莞南方半导体科技有限公司 一种碳化硅功率器件终端区表面钝化方法
TWI822438B (zh) * 2022-11-02 2023-11-11 台亞半導體股份有限公司 碳化矽檢光閘流體與製造方法

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2268355B1 (de) 1974-04-16 1978-01-20 Thomson Csf
US3895127A (en) * 1974-04-19 1975-07-15 Rca Corp Method of selectively depositing glass on semiconductor devices
US4551353A (en) * 1981-12-30 1985-11-05 Unitrode Corporation Method for reducing leakage currents in semiconductor devices
JPS61170067A (ja) * 1985-01-23 1986-07-31 Nec Corp 半導体装置
US4717641A (en) * 1986-01-16 1988-01-05 Motorola Inc. Method for passivating a semiconductor junction
US4799100A (en) * 1987-02-17 1989-01-17 Siliconix Incorporated Method and apparatus for increasing breakdown of a planar junction
JPH02187030A (ja) * 1989-01-13 1990-07-23 Kawasaki Steel Corp 半導体装置への保護膜の形成方法
US5332697A (en) 1989-05-31 1994-07-26 Smith Rosemary L Formation of silicon nitride by nitridation of porous silicon
JPH04186675A (ja) * 1990-11-16 1992-07-03 Matsushita Electron Corp 半導体装置
IE920778A1 (en) 1991-03-12 1992-09-23 Du Pont Method for specific binding assays using a releasable ligand
US5612260A (en) * 1992-06-05 1997-03-18 Cree Research, Inc. Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures
US5430324A (en) 1992-07-23 1995-07-04 Siliconix, Incorporated High voltage transistor having edge termination utilizing trench technology
SE9500013D0 (sv) * 1995-01-03 1995-01-03 Abb Research Ltd Semiconductor device having a passivation layer
US5972801A (en) 1995-11-08 1999-10-26 Cree Research, Inc. Process for reducing defects in oxide layers on silicon carbide
JP3183190B2 (ja) * 1995-12-14 2001-07-03 株式会社デンソー 半導体装置の製造方法
DE19722859C1 (de) * 1997-05-31 1998-10-15 Dresden Ev Inst Festkoerper Oberflächenwellenresonator
US6316820B1 (en) 1997-07-25 2001-11-13 Hughes Electronics Corporation Passivation layer and process for semiconductor devices
US6825501B2 (en) 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
JP2974003B2 (ja) * 1998-04-22 1999-11-08 富士電機株式会社 半導体装置およびその製造方法
US6303969B1 (en) 1998-05-01 2001-10-16 Allen Tan Schottky diode with dielectric trench
TW471049B (en) 1998-05-22 2002-01-01 United Microelectronics Corp Metal gate structure and manufacturing method for metal oxide semiconductor
US6281521B1 (en) * 1998-07-09 2001-08-28 Cree Research Inc. Silicon carbide horizontal channel buffered gate semiconductor devices
US6246076B1 (en) 1998-08-28 2001-06-12 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
US6972436B2 (en) 1998-08-28 2005-12-06 Cree, Inc. High voltage, high temperature capacitor and interconnection structures
JP4361625B2 (ja) 1998-10-05 2009-11-11 東京エレクトロン株式会社 半導体装置及びその製造方法
US6242784B1 (en) * 1999-06-28 2001-06-05 Intersil Corporation Edge termination for silicon power devices
TW474024B (en) 1999-08-16 2002-01-21 Cornell Res Foundation Inc Passivation of GaN based FETs
US6903373B1 (en) 1999-11-23 2005-06-07 Agere Systems Inc. SiC MOSFET for use as a power switch and a method of manufacturing the same
US6373076B1 (en) * 1999-12-07 2002-04-16 Philips Electronics North America Corporation Passivated silicon carbide devices with low leakage current and method of fabricating
US6586781B2 (en) 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
US6939756B1 (en) * 2000-03-24 2005-09-06 Vanderbilt University Inclusion of nitrogen at the silicon dioxide-silicon carbide interace for passivation of interface defects
US6630413B2 (en) 2000-04-28 2003-10-07 Asm Japan K.K. CVD syntheses of silicon nitride materials
US6686616B1 (en) * 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
JP2001352056A (ja) * 2000-06-08 2001-12-21 Fuji Electric Co Ltd 半導体装置
US6396090B1 (en) 2000-09-22 2002-05-28 Industrial Technology Research Institute Trench MOS device and termination structure
US6767843B2 (en) 2000-10-03 2004-07-27 Cree, Inc. Method of N2O growth of an oxide layer on a silicon carbide layer
US6610366B2 (en) 2000-10-03 2003-08-26 Cree, Inc. Method of N2O annealing an oxide layer on a silicon carbide layer
JP2002134504A (ja) * 2000-10-30 2002-05-10 Fuji Electric Co Ltd 半導体装置およびその製造方法
US6573128B1 (en) 2000-11-28 2003-06-03 Cree, Inc. Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
JP4011848B2 (ja) * 2000-12-12 2007-11-21 関西電力株式会社 高耐電圧半導体装置
US6528373B2 (en) 2001-02-12 2003-03-04 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
JP4852792B2 (ja) * 2001-03-30 2012-01-11 株式会社デンソー 半導体装置の製造方法
US6849882B2 (en) 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US6797586B2 (en) 2001-06-28 2004-09-28 Koninklijke Philips Electronics N.V. Silicon carbide schottky barrier diode and method of making
KR100920434B1 (ko) 2001-07-24 2009-10-08 크리, 인코포레이티드 절연 게이트 갈륨 비소 질화물/갈륨 질화물계 고전자이동도 트랜지스터
US7022378B2 (en) * 2002-08-30 2006-04-04 Cree, Inc. Nitrogen passivation of interface states in SiO2/SiC structures
US6956239B2 (en) * 2002-11-26 2005-10-18 Cree, Inc. Transistors having buried p-type layers beneath the source region
US6747338B1 (en) * 2002-11-27 2004-06-08 Analog Devices, Inc. Composite dielectric with improved etch selectivity for high voltage MEMS structures
EP1634323A4 (de) 2003-06-13 2008-06-04 Univ North Carolina State Komplexe oxide zur verwendung in halbleiterbauelementen und diesbezügliche verfahren
US7053425B2 (en) * 2003-11-12 2006-05-30 General Electric Company Gas sensor device
DE10358985B3 (de) * 2003-12-16 2005-05-19 Infineon Technologies Ag Halbleiterbauelement mit einem pn-Übergang und einer auf einer Oberfläche aufgebrachten Passivierungsschicht
US7045404B2 (en) 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
DE102004012884B4 (de) * 2004-03-16 2011-07-21 IXYS Semiconductor GmbH, 68623 Leistungs-Halbleiterbauelement in Planartechnik
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
US7550783B2 (en) 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7332795B2 (en) 2004-05-22 2008-02-19 Cree, Inc. Dielectric passivation for semiconductor devices
US7297995B2 (en) * 2004-08-24 2007-11-20 Micron Technology, Inc. Transparent metal shielded isolation for image sensors
US7345309B2 (en) * 2004-08-31 2008-03-18 Lockheed Martin Corporation SiC metal semiconductor field-effect transistor
US20060118892A1 (en) * 2004-12-02 2006-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and Structures to Produce a Strain-Inducing Layer in a Semiconductor Device
US20060145190A1 (en) 2004-12-31 2006-07-06 Salzman David B Surface passivation for III-V compound semiconductors
US7525122B2 (en) * 2005-06-29 2009-04-28 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides

Also Published As

Publication number Publication date
WO2007081528A8 (en) 2008-10-02
US7598576B2 (en) 2009-10-06
EP1972013A2 (de) 2008-09-24
US7696584B2 (en) 2010-04-13
WO2007081528A2 (en) 2007-07-19
US20070001176A1 (en) 2007-01-04
EP1972013B1 (de) 2010-06-09
KR20080075224A (ko) 2008-08-14
JP5254037B2 (ja) 2013-08-07
JP2009522823A (ja) 2009-06-11
CN101356649A (zh) 2009-01-28
CN101356649B (zh) 2010-04-14
WO2007081528A3 (en) 2007-09-20
US20070018272A1 (en) 2007-01-25
DE602006014871D1 (de) 2010-07-22
KR101012713B1 (ko) 2011-02-09

Similar Documents

Publication Publication Date Title
ATE470955T1 (de) Umweltverträgliche passivierungsstrukturen für hochspannungs-siliciumcarbid- halbleiterbauelemente
JP2010157636A5 (de)
GB2503830A (en) Silicon carbide semiconductor device with a gate electrode
TW200715629A (en) Thin film transistor and organic electroluminescence display device
FR2914501B1 (fr) Dispositif photovoltaique a structure a heterojonctions interdigitee discontinue
DE602006007899D1 (de) CCD mit Register zur Ladungsvervielfachung
SE0500865L (sv) Halvledaranordning av kiselkarbid
SG149774A1 (en) Buried contact devices for nitride-based films and manufacture therof
EP2620983A4 (de) Halbleiterelement und herstellungsverfahren dafür
GB2455669A (en) Stressed field effect transistor and methods for its fabrication
JP2011077509A5 (ja) トランジスタ
SE0700896L (sv) Halvledarkomponent i kiselkarbid
WO2009063588A1 (ja) 半導体装置及びその製造方法
SG148972A1 (en) Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector
JP2009157366A5 (de)
TW200616031A (en) High voltage lateral diffused MOSFET device
JP2011066246A5 (de)
TW200644221A (en) Method of forming an integrated power device and structure
DE602006011501D1 (de) Rotationsscherspannung für ladungsträgermobilitäts-modifikation
WO2011151681A3 (ja) 半導体装置およびこれを用いた半導体リレー
GB2492524A (en) Monolayer dopant embedded stressor for advanced cmos
GB2495166A (en) Single-junction photovoltaic cell
TW200407609A (en) Semiconductor device, electro-optic device, electronic apparatus, and manufacturing method of semiconductor device
TW200746392A (en) Semiconductor device
ATE550782T1 (de) Erhobene sti-struktur und superdamaszen-technik für erhöhte nmosfet-lesitung mit eingebettetem siliziumkohlenstoff

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties