JP5252800B2 - エネルギー障壁を有するへテロ接合トランジスタおよび関連する方法 - Google Patents
エネルギー障壁を有するへテロ接合トランジスタおよび関連する方法 Download PDFInfo
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- 230000004888 barrier function Effects 0.000 title claims description 256
- 238000000034 method Methods 0.000 title description 8
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 53
- 150000004767 nitrides Chemical class 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 36
- 229910052738 indium Inorganic materials 0.000 claims description 27
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 26
- 229910045601 alloy Inorganic materials 0.000 claims description 23
- 239000000956 alloy Substances 0.000 claims description 23
- 239000000969 carrier Substances 0.000 claims description 23
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 687
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 108
- 229910002601 GaN Inorganic materials 0.000 description 104
- 230000005684 electric field Effects 0.000 description 56
- 239000000463 material Substances 0.000 description 38
- 238000010586 diagram Methods 0.000 description 31
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 29
- 229910002704 AlGaN Inorganic materials 0.000 description 28
- 230000006870 function Effects 0.000 description 21
- 239000011241 protective layer Substances 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 17
- 239000013078 crystal Substances 0.000 description 15
- 239000000370 acceptor Substances 0.000 description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 14
- 230000002829 reductive effect Effects 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 13
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 238000002161 passivation Methods 0.000 description 11
- 238000005036 potential barrier Methods 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 241001125929 Trisopterus luscus Species 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
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- 230000009467 reduction Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
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- 238000009826 distribution Methods 0.000 description 2
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- 239000002356 single layer Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 241000282836 Camelus dromedarius Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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- 239000003574 free electron Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- 230000002269 spontaneous effect Effects 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/7785—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with more than one donor layer
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Description
本明細書で使用されるとき、「III族窒化物」という用語は、窒素と周期律表のIII族の元素、通常アルミニウム(Al)、ガリウム(Ga)および/またはインジウム(In)との間で形成された半導体化合物を意味する。また、この用語は、AlGaNおよびAlInGaNのような三元および四元化合物を意味する。当業者はよく理解するように、III族元素は窒素と結合して二元(例えば、GaN)、三元(例えば、AlGaN、AlInN)、および四元(例えば、AlInGaN)化合物を形成することができる。これらの化合物はすべて、1モルの窒素が合計1モルのIII族元素と結合した実験式(empirical formula)を有する。したがって、AlxGa1−xN(0≦x≦1)のような式が、これらの化合物を記述するために使用されることが多い。簡略のために、III族元素(Al、InおよびGa)の相対的な割合の明記なしに本明細書で用語AlInGaNが使用されるとき、一般式InxAlyGazN(x+y+z=1、0≦x≦1、0≦y≦1および0≦z≦1)の化合物を意味することが理解されるだろう。したがって、本明細書で使用するとき、用語InAlGaNは、別段の明記または制限がない限り、GaN、InN、AlN、AlGaN、AlInN、InGaNおよび/またはAlInGaNを意味することができる。したがって、用語「InAlGaN」、「III族窒化物材料」および「窒化物ベースの材料」は、本明細書全体を通して同義的に使用される。
この電圧は、Eg−Ea−Edよりも必ず小さい。ここで、Egはエネルギーギャップであり、Eaは価電子帯に対するアクセプタイオン化エネルギーであり、Edは伝導帯に対するドナーイオン化エネルギーである。完全な空乏化を保証するために、障壁の電圧は、Eg−Ea−Edより間違いなく小さいように選ぶべきである。
d×Psheet×(2×10−7V・cm)<(Eg−Ea−Ed)/q (4)
d×Psheet<5×106×(Eg−Ea−Ed)/q(V−1cm−1)
比較的浅いアクセプタおよびドナーを想定すると、2Vの障壁が適切な目標であろう。
d×Psheet<107/cm×104μm/cm (5)
d×Psheet<1011μm/cm2
チャネル電荷に比べては小さいが、閉じ込めを改善することができる電界のためには十分に大きなシート電荷密度、例えば1012cm−2を選ぶと、そのとき、
d<0.1μm
Vbc=Rds*Ft*d
上記のように計算される後部閉じ込め値Vbcはまた、シート電荷密度(V/Ns*q)の単位面積当たりの閉じ込め電位を表すことができる。ここで、Vは閉じ込め電位、Nsはシート電荷、そしてqは単位電子電荷である。
Vbc(サンプル3)=(287.8Ωmm)(27.7*10−6mm)(44GHz)=0.35Ωmm2GHz
本発明の実施形態による厚さ5nmのInGaN層38を含む図23a〜cのデバイスの中で、サンプル4は、下記に計算されるように最も低い後部閉じ込め値Vbcを実現する可能性がある。
Vbc(サンプル4)=(197.8Ωmm)(27.7*10−6mm)(39GHz)=0.21Ωmm2GHz
後部障壁InGaN層を備えない図23a〜bのデバイス(コントロール1およびコントロール2)について、最も低い後部閉じ込め値Vbcが、下に示すように計算することができる。
Vbc(コントロール1)=(163.3Ωmm)(27.7*10−6mm)(44GHz)=0.20Ωmm2GHz
Vbc(コントロール2)=(137.3Ωmm)(27.7*10−6mm)(41GHz)=0.16Ωmm2GHz
本発明の実施形態によると、ヘテロ接合トランジスタは、III族窒化物のチャネル層14と、チャネル層14の上のIII族窒化物の障壁層16であってチャネル層14よりも大きいバンドギャップを有する障壁層16と、障壁層16がゲートコンタクト22とチャネル層14との間にあるようにした障壁層16の上のゲートコンタクト22と、ゲートコンタクト22の対向する側にあるソースコンタクト18およびドレインコンタクト20とを備えることができる。その上、InGaNのエネルギー障壁38をチャネル層14の上に設け、チャネル層14がエネルギー障壁38と障壁層16との間にあるようにすることができ、さらに、エネルギー障壁38は、少なくとも約0.21Ωmm2GHzの後部閉じ込め値Vbc、より詳細には少なくとも約0.3Ωmm2GHzの後部閉じ込め値Vbcを実現するように構成することができる。さらに、エネルギー障壁38は、少なくとも約35GHzのユニティ利得周波数の場合に、少なくともほぼ0.21Ωmm2GHzの後部閉じ込め値Vbcを実現するように構成することができる。
Dr=Rds*d/Lg
図23a〜cの構造において、各デバイスのゲート長Lgは約0.55μm(マイクロメートル)であり、各デバイスの間隔dは約27nmであった。本発明の実施形態による厚さ5nmのInGaN層38を備える図23a〜cのデバイスの中で、サンプル3は、下で計算されるように最も高いデバイス抵抗Drを実現する可能性がある。
Dr(サンプル3)=(287.8Ωmm)(27.7nm)/(550nm)=14.5Ωmm
本発明の実施形態による厚さ5nmのInGaN層38を備える図23a〜cのデバイスの中で、サンプル4は、下で計算されるように最も低いデバイス抵抗Drを実現する可能性がある。
Dr(サンプル4)=(197.8Ωmm)(27.7nm)/(550nm)=10Ωmm
後部障壁InGaN層を備えない図23a〜cのデバイス(コントロール1およびコントロール2)について、デバイス抵抗Drは下に示すように計算することができる。
Dr(コントロール1)=(163.3Ωmm)(27.7nm)/(550nm)=8.2Ωmm
Dr(コントロール2)=(137.3Ωmm)(27.7nm)/(550nm)=6.9Ωmm
本発明の実施形態によると、ヘテロ接合トランジスタは、III族窒化物のチャネル層14、チャネル層14の上のIII族窒化物の障壁層16であってチャネル層14よりも大きいバンドギャップを有する障壁層16を備えることができる。ゲートコンタクト22を障壁層16の上に設け、障壁層16がゲートコンタクト22とチャネル層14との間にあるようにすることができ、ソースコンタクト18およびドレインコンタクト20は、ゲートコンタクト22の対向する側に設けることができる。その上、InGaNのエネルギー障壁38をチャネル層14の上に設け、チャネル層14がエネルギー障壁38と障壁層16との間にあるようにすることができ、さらに、エネルギー障壁38は、少なくとも約9Ωmmのデバイス抵抗Rd、より詳細には少なくとも約14Ωmmのデバイス抵抗Rdを実現するように構成することができる。
Claims (10)
- ヘテロ接合トランジスタであって、
III族窒化物を含むチャネル層(14)と、
前記チャネル層に隣接したIII族窒化物を含む障壁層(16)であって、前記チャネル層のバンドギャップよりも大きなバンドギャップを有する障壁層と、
前記チャネル層に隣接したインジウムを含むIII族窒化物の第1の層(38)であって、前記チャネル層は前記障壁層と前記第1の層との間にあり、前記第1の層のインジウム(In)の濃度が前記チャネル層のインジウム(In)の濃度よりも高く、エネルギー障壁である前記第1の層と、
前記第1の層に隣接した第2の層(36)であって、前記第1の層は前記チャネル層と前記第2の層との間にあり、前記第2の層は前記第1の層より大きなバンドギャップを有するため正孔供給源領域が前記第2の層と前記第1の層との間に誘起される前記第2の層と、
前記障壁層に隣接したIII族窒化物を含むキャップ層(17)であって、前記障壁層は前記キャップ層と前記チャネル層との間にあり、前記キャップ層のGaの濃度は、前記障壁層のGaの濃度よりも高いキャップ層とを備え、
前記第1の層は、InxGa1−xN(0<x<1)の組成を有し、InN(窒化インジウム)のモル分率が4%から16%までの範囲であるInN/GaN合金の層を備える
ヘテロ接合トランジスタ。 - 前記チャネル層および前記障壁層が、協働して、前記チャネル層と前記障壁層との界面に2次元電子ガスを誘起することを特徴とする請求項1に記載のヘテロ接合トランジスタ。
- 前記第1の層は、前記チャネル層から離れるキャリアの動きを妨害することを特徴とする請求項1に記載のヘテロ接合トランジスタ。
- 前記第1の層は、量子井戸を備えることを特徴とする請求項1に記載のヘテロ接合トランジスタ。
- 前記第1の層は、1オングストロームから200オングストロームまでの範囲の厚さを有することを特徴とする請求項1に記載のヘテロ接合トランジスタ。
- 前記キャップ層の上のソースコンタクト、ドレインコンタクトおよびゲートコンタクトであって、前記キャップ層は、前記障壁層と、前記ソースコンタクト、ドレインコンタクトおよびゲートコンタクトとの間にある前記ソースコンタクト、ドレインコンタクトおよびゲートコンタクトと、
基板であって、前記第2の層が前記基板上に直接形成または前記基板上に形成された介在層の上に形成されており、前記第1の層と前記第2の層は前記基板と前記チャネル層との間にある前記基板と
をさらに備えることを特徴とする請求項1に記載のヘテロ接合トランジスタ。 - 前記障壁層は、0.1nmから10nmまでの範囲の厚さを有することを特徴とする請求項1に記載のヘテロ接合トランジスタ。
- 前記障壁層と前記第1の層とは、5nmから30nmまでの範囲の距離で隔てられていることを特徴とする請求項1に記載のヘテロ接合トランジスタ。
- 前記チャネル層はAlyGa1−yN(0≦y<1)の層を備え、前記障壁層はAlzGa1−zN(0<z≦1)の層を備え、そしてyとzは異なることを特徴とする請求項1に記載のヘテロ接合トランジスタ。
- 前記障壁層のAlの濃度は、前記チャネル層のAlの濃度よりも高いことを特徴とする請求項1に記載のヘテロ接合トランジスタ。
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EP1821344B1 (en) | 2015-09-16 |
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US20060255364A1 (en) | 2006-11-16 |
JP2012164988A (ja) | 2012-08-30 |
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US7612390B2 (en) | 2009-11-03 |
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