EP3673513A4 - Digital alloy based back barrier for p-channel nitride transistors - Google Patents

Digital alloy based back barrier for p-channel nitride transistors Download PDF

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Publication number
EP3673513A4
EP3673513A4 EP17922088.4A EP17922088A EP3673513A4 EP 3673513 A4 EP3673513 A4 EP 3673513A4 EP 17922088 A EP17922088 A EP 17922088A EP 3673513 A4 EP3673513 A4 EP 3673513A4
Authority
EP
European Patent Office
Prior art keywords
alloy based
back barrier
based back
nitride transistors
digital alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17922088.4A
Other languages
German (de)
French (fr)
Other versions
EP3673513A1 (en
Inventor
Rongming Chu
Yu Cao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HRL Laboratories LLC
Original Assignee
HRL Laboratories LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HRL Laboratories LLC filed Critical HRL Laboratories LLC
Publication of EP3673513A1 publication Critical patent/EP3673513A1/en
Publication of EP3673513A4 publication Critical patent/EP3673513A4/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
EP17922088.4A 2017-08-25 2017-08-25 Digital alloy based back barrier for p-channel nitride transistors Pending EP3673513A4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2017/048753 WO2019040083A1 (en) 2017-08-25 2017-08-25 Digital alloy based back barrier for p-channel nitride transistors

Publications (2)

Publication Number Publication Date
EP3673513A1 EP3673513A1 (en) 2020-07-01
EP3673513A4 true EP3673513A4 (en) 2021-04-07

Family

ID=65439473

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17922088.4A Pending EP3673513A4 (en) 2017-08-25 2017-08-25 Digital alloy based back barrier for p-channel nitride transistors

Country Status (3)

Country Link
EP (1) EP3673513A4 (en)
CN (1) CN111033750B (en)
WO (1) WO2019040083A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100276732A1 (en) * 2007-12-26 2010-11-04 Yuji Ando Semiconductor device
US20140264379A1 (en) * 2013-03-15 2014-09-18 The Government Of The United States Of America, As Represented By The Secretary Of The Navy III-Nitride P-Channel Field Effect Transistor with Hole Carriers in the Channel
US20150303290A1 (en) * 2014-04-21 2015-10-22 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6942150B2 (en) * 1993-11-24 2005-09-13 Metrologic Instruments, Inc. Web-based mobile information access terminal
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7709859B2 (en) * 2004-11-23 2010-05-04 Cree, Inc. Cap layers including aluminum nitride for nitride-based transistors
US7615774B2 (en) * 2005-04-29 2009-11-10 Cree.Inc. Aluminum free group III-nitride based high electron mobility transistors
US9711633B2 (en) * 2008-05-09 2017-07-18 Cree, Inc. Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
WO2010077984A2 (en) * 2008-12-16 2010-07-08 California Institute Of Technology Digital alloy absorber for photodetectors
US8217480B2 (en) * 2010-10-22 2012-07-10 California Institute Of Technology Barrier infrared detector
US8617927B1 (en) * 2011-11-29 2013-12-31 Hrl Laboratories, Llc Method of mounting electronic chips
US9093366B2 (en) * 2012-04-09 2015-07-28 Transphorm Inc. N-polar III-nitride transistors
US8860091B2 (en) * 2012-04-16 2014-10-14 Hrl Laboratories, Llc Group III-N HFET with a graded barrier layer
EP3285302B1 (en) * 2013-02-15 2019-09-11 AZUR SPACE Solar Power GmbH Layer structure for a group-iii-nitride normally-off transistor
US9202905B1 (en) * 2014-09-08 2015-12-01 Triquint Semiconductor, Inc. Digital alloy layer in a III-nitrade based heterojunction field effect transistor
US10347722B2 (en) * 2015-03-04 2019-07-09 Lehigh University Artificially engineered III-nitride digital alloy

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100276732A1 (en) * 2007-12-26 2010-11-04 Yuji Ando Semiconductor device
US20140264379A1 (en) * 2013-03-15 2014-09-18 The Government Of The United States Of America, As Represented By The Secretary Of The Navy III-Nitride P-Channel Field Effect Transistor with Hole Carriers in the Channel
US20150303290A1 (en) * 2014-04-21 2015-10-22 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device

Also Published As

Publication number Publication date
CN111033750A (en) 2020-04-17
WO2019040083A1 (en) 2019-02-28
EP3673513A1 (en) 2020-07-01
CN111033750B (en) 2023-09-01

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