JP5237827B2 - 酸化インジウム系ターゲット - Google Patents
酸化インジウム系ターゲット Download PDFInfo
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- JP5237827B2 JP5237827B2 JP2008550292A JP2008550292A JP5237827B2 JP 5237827 B2 JP5237827 B2 JP 5237827B2 JP 2008550292 A JP2008550292 A JP 2008550292A JP 2008550292 A JP2008550292 A JP 2008550292A JP 5237827 B2 JP5237827 B2 JP 5237827B2
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- 229910003437 indium oxide Inorganic materials 0.000 title claims description 25
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims description 25
- 239000011777 magnesium Substances 0.000 claims description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 31
- 229910052760 oxygen Inorganic materials 0.000 claims description 31
- 239000001301 oxygen Substances 0.000 claims description 31
- 229910052749 magnesium Inorganic materials 0.000 claims description 27
- 229910052738 indium Inorganic materials 0.000 claims description 25
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 24
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 21
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 17
- 239000010408 film Substances 0.000 description 117
- 230000015572 biosynthetic process Effects 0.000 description 42
- 238000000137 annealing Methods 0.000 description 32
- 238000000034 method Methods 0.000 description 20
- 229910052718 tin Inorganic materials 0.000 description 19
- 238000005530 etching Methods 0.000 description 17
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 12
- 238000002425 crystallisation Methods 0.000 description 11
- 230000008025 crystallization Effects 0.000 description 11
- 239000000843 powder Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 238000000465 moulding Methods 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 8
- 239000000654 additive Substances 0.000 description 7
- 238000001755 magnetron sputter deposition Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000005477 sputtering target Methods 0.000 description 7
- 230000000996 additive effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000000411 transmission spectrum Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 235000006408 oxalic acid Nutrition 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910017911 MgIn Inorganic materials 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002233 thin-film X-ray diffraction Methods 0.000 description 2
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- UOVKYUCEFPSRIJ-UHFFFAOYSA-D hexamagnesium;tetracarbonate;dihydroxide;pentahydrate Chemical compound O.O.O.O.O.[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O UOVKYUCEFPSRIJ-UHFFFAOYSA-D 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229940031958 magnesium carbonate hydroxide Drugs 0.000 description 1
- OUHCLAKJJGMPSW-UHFFFAOYSA-L magnesium;hydrogen carbonate;hydroxide Chemical compound O.[Mg+2].[O-]C([O-])=O OUHCLAKJJGMPSW-UHFFFAOYSA-L 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Conductive Materials (AREA)
Description
(Mg添加ITO、Mg=0.02−Sn=0.1)
純度>99.99%のIn2O3粉、SnO2粉、および炭酸水酸化マグネシウム粉(MgO含有量41.5wt%)を用意した。
成膜例1〜3を以下の通り実施した。
ターゲット寸法 :φ=4in. t=6mm
スパッタ方式 :DCマグネトロンスパッタ
排気装置 :ロータリーポンプ+クライオポンプ
到達真空度 :5.3×10-6[Pa]
Ar圧力 :4.0×10-1[Pa]
酸素圧力:0〜1.1×10-2[Pa]
水圧力:5.0×10−6[Pa]
基板温度:室温
スパッタ電力 :130W (電力密度1.6W/cm2)
使用基板 :コーニング#1737(液晶ディスプレイ用ガラス) t=0.8mm
成膜例1〜3において、室温成膜時における最適酸素分圧にて製造した透明導電膜を、それぞれ13mm角の大きさに切り出し、これらのサンプルを大気中にて250℃で1時間アニールした。成膜例1、2のアニール前後の薄膜XRDパターンを図3に示す。また、成膜例1〜3に関し、室温成膜時と250℃アニール後の結晶状態について、アモルファスはa、結晶はcとし、これらを表2に示す。
成膜例で成膜した各透明導電膜の、室温成膜時における最適酸素分圧成膜時の抵抗率ρ(Ω・cm)を測定した。また、試験例1のアニール後のサンプルについて測定した抵抗率も測定した。これらの結果を表2に示す。
成膜例1〜3において、室温成膜における最適酸素分圧にて製造した透明導電膜を、それぞれ13mm角の大きさに切り出し、透過スペクトルを測定した。また、試験例1のアニール後の膜についても同様に透過スペクトルを測定した。これらの結果を図4に示す。また、各成膜例1〜3のアニール後の平均透過率を表2に示す。
成膜例1〜3において、室温成膜における最適酸素分圧にて製造した透明導電膜を、それぞれ10×50mmの大きさに切り出し、エッチング液としてITO−05N(シュウ酸系、関東化学(株)製)(シュウ酸濃度50g/L)を用い、温度30℃で、エッチングが可能か否かについて確認した。また、試験例1のアニール後のサンプルについても同様に確認した。これらの結果を、エッチング可を「○」、エッチング不可を「×」として表2に示す。
上述したとおり製造した表1に示す組成のターゲットを用い、これを4インチのDCマグネトロンスパッタ装置にそれぞれ装着し、基板温度を室温(約20℃)、酸素分圧を0〜3.0sccmの間で変化させながら(0〜1.1×10-2Paに相当)、各組成の透明導電膜を得た。
ターゲット寸法 :φ=4in. t=6mm
スパッタ方式 :DCマグネトロンスパッタ
排気装置 :ロータリーポンプ+クライオポンプ
到達真空度 :5.3×10-5[Pa]
Ar圧力 :4.0×10-1[Pa]
酸素圧力:0〜1.1×10-2[Pa]
水圧力:5.0×10−5[Pa]
基板温度:室温
スパッタ電力 :130W (電力密度1.6W/cm2)
使用基板 :コーニング#1737(液晶ディスプレイ用ガラス) t=0.8mm
Claims (2)
- インジウム、錫、マグネシウム及び酸素からなる酸化インジウム系ターゲットであって、錫及びマグネシウムの含有量が、インジウム1モルに対しての錫のモル比yが、インジウム1モルに対するマグネシウムのモル比xで表される(−4.1×10−2Ln(x)−9.3×10−2)の値以上であり且つ(−2.5×10−1Ln(x)−5.7×10−1)の値以下の範囲にあり、且つインジウム1モルに対しての錫のモル比yが、インジウム1モルに対するマグネシウムのモル比xで表される(1.3×10 −2 Ln(x)+2.0×10 −1 )の値以上であり且つ(−2.2×10 −3 Ln(x)+2.0×10 −1 )の値以下の範囲にあることを特徴とする酸化インジウム系ターゲット。
- 請求項1に記載の酸化インジウム系ターゲットにおいて、インジウム1モルに対するマグネシウムのモル比xが、0.01以上であることを特徴とする酸化インジウム系ターゲット。
Priority Applications (1)
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JP2008550292A JP5237827B2 (ja) | 2007-10-03 | 2008-10-03 | 酸化インジウム系ターゲット |
Applications Claiming Priority (4)
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JP2007260436 | 2007-10-03 | ||
JP2007260436 | 2007-10-03 | ||
JP2008550292A JP5237827B2 (ja) | 2007-10-03 | 2008-10-03 | 酸化インジウム系ターゲット |
PCT/JP2008/068099 WO2009044890A1 (ja) | 2007-10-03 | 2008-10-03 | 酸化インジウム系ターゲット |
Publications (2)
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JPWO2009044890A1 JPWO2009044890A1 (ja) | 2011-02-10 |
JP5237827B2 true JP5237827B2 (ja) | 2013-07-17 |
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JP2008550298A Pending JPWO2009044892A1 (ja) | 2007-10-03 | 2008-10-03 | 酸化インジウム系透明導電膜及びその製造方法 |
JP2008550296A Active JP5464319B2 (ja) | 2007-10-03 | 2008-10-03 | 酸化インジウム系ターゲット |
JP2008550297A Withdrawn JPWO2009044889A1 (ja) | 2007-10-03 | 2008-10-03 | 酸化インジウム系ターゲット |
JP2008550294A Pending JPWO2009044891A1 (ja) | 2007-10-03 | 2008-10-03 | 酸化インジウム系透明導電膜及びその製造方法 |
JP2008550292A Active JP5237827B2 (ja) | 2007-10-03 | 2008-10-03 | 酸化インジウム系ターゲット |
JP2008550302A Pending JPWO2009044893A1 (ja) | 2007-10-03 | 2008-10-03 | 酸化インジウム系透明導電膜及びその製造方法 |
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JP2008550296A Active JP5464319B2 (ja) | 2007-10-03 | 2008-10-03 | 酸化インジウム系ターゲット |
JP2008550297A Withdrawn JPWO2009044889A1 (ja) | 2007-10-03 | 2008-10-03 | 酸化インジウム系ターゲット |
JP2008550294A Pending JPWO2009044891A1 (ja) | 2007-10-03 | 2008-10-03 | 酸化インジウム系透明導電膜及びその製造方法 |
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Country Status (4)
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JP (6) | JPWO2009044892A1 (ja) |
KR (6) | KR20100063137A (ja) |
TW (6) | TWI430956B (ja) |
WO (6) | WO2009044889A1 (ja) |
Cited By (1)
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US9511417B2 (en) | 2013-11-26 | 2016-12-06 | General Electric Company | Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys |
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JP2011037679A (ja) * | 2009-08-13 | 2011-02-24 | Tosoh Corp | 複合酸化物焼結体、スパッタリングターゲット、複合酸化物非晶質膜及びその製造方法、並びに、複合酸化物結晶質膜及びその製造方法 |
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CN102191465A (zh) * | 2010-03-18 | 2011-09-21 | 中国科学院福建物质结构研究所 | 一种铟掺杂氧化锌靶材及透明导电膜的制备方法 |
KR101198786B1 (ko) | 2010-06-30 | 2012-11-07 | 현대자동차주식회사 | 가변 압축비 장치 |
JP5367659B2 (ja) * | 2010-08-31 | 2013-12-11 | Jx日鉱日石金属株式会社 | 酸化物焼結体及び酸化物半導体薄膜 |
JP5367660B2 (ja) * | 2010-08-31 | 2013-12-11 | Jx日鉱日石金属株式会社 | 酸化物焼結体及び酸化物半導体薄膜 |
JP5817327B2 (ja) | 2010-09-29 | 2015-11-18 | 東ソー株式会社 | 酸化物焼結体、その製造方法、それを用いて得られる酸化物透明導電膜及び太陽電池 |
WO2013084795A1 (ja) * | 2011-12-07 | 2013-06-13 | 東ソー株式会社 | 複合酸化物焼結体、スパッタリングターゲット、並びに酸化物透明導電膜及びその製造方法 |
US8932518B2 (en) | 2012-02-29 | 2015-01-13 | General Electric Company | Mold and facecoat compositions |
JP5996227B2 (ja) * | 2012-03-26 | 2016-09-21 | 学校法人 龍谷大学 | 酸化物膜及びその製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07161235A (ja) * | 1993-12-13 | 1995-06-23 | Matsushita Electric Ind Co Ltd | 透明導電膜およびその製造方法 |
JP2001098359A (ja) * | 1999-09-24 | 2001-04-10 | Tosoh Corp | Mg含有ITOスパッタリングターゲットおよびMg含有ITO蒸着材の製造方法 |
JP2001151572A (ja) * | 1998-10-13 | 2001-06-05 | Geomatec Co Ltd | 金属酸化物焼結体およびその用途 |
JP2002284570A (ja) * | 2001-03-23 | 2002-10-03 | Tosoh Corp | 酸化物焼結体およびスパッタリングターゲット |
JP2003055759A (ja) * | 2001-08-10 | 2003-02-26 | Tosoh Corp | Mg含有ITOスパッタリングターゲットの製造方法 |
JP2003160861A (ja) * | 2001-11-27 | 2003-06-06 | Tosoh Corp | Mg含有ITOスパッタリングターゲットの製造方法 |
JP2005194594A (ja) * | 2004-01-08 | 2005-07-21 | Tosoh Corp | スパッタリングターゲットおよびその製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0570942A (ja) * | 1991-09-11 | 1993-03-23 | Mitsubishi Materials Corp | スパツタリングによる透明導電性薄膜形成用高密度焼結ターゲツト材 |
JPH06157036A (ja) * | 1992-11-13 | 1994-06-03 | Nippon Soda Co Ltd | スズドープ酸化インジウム膜の高比抵抗化方法 |
US5433901A (en) * | 1993-02-11 | 1995-07-18 | Vesuvius Crucible Company | Method of manufacturing an ITO sintered body |
JP3366046B2 (ja) * | 1993-03-30 | 2003-01-14 | 旭硝子株式会社 | 非晶質透明導電膜 |
JP3827334B2 (ja) * | 1993-08-11 | 2006-09-27 | 東ソー株式会社 | Ito焼結体及びスパッタリングターゲット |
JPH08264023A (ja) * | 1995-03-27 | 1996-10-11 | Gunze Ltd | 透明導電膜 |
JP3943617B2 (ja) * | 1995-12-07 | 2007-07-11 | 出光興産株式会社 | 透明導電積層体およびこれを用いたタッチパネル |
JPH09175837A (ja) * | 1995-12-27 | 1997-07-08 | Idemitsu Kosan Co Ltd | 透明導電膜およびその製造方法 |
JPH1195239A (ja) * | 1997-09-25 | 1999-04-09 | Toshiba Corp | 液晶表示装置の製造方法 |
JP3806521B2 (ja) * | 1998-08-27 | 2006-08-09 | 旭硝子セラミックス株式会社 | 透明導電膜、スパッタリングターゲットおよび透明導電膜付き基体 |
JP3824289B2 (ja) * | 1998-09-11 | 2006-09-20 | Hoya株式会社 | 透明導電性薄膜 |
JP2000169219A (ja) * | 1998-12-09 | 2000-06-20 | Jiomatetsuku Kk | 金属酸化物焼結体およびその用途 |
JP4424889B2 (ja) * | 2001-06-26 | 2010-03-03 | 三井金属鉱業株式会社 | 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法 |
KR100744017B1 (ko) * | 2001-06-26 | 2007-07-30 | 미츠이 긴조쿠 고교 가부시키가이샤 | 고저항 투명 도전막용 스퍼터링 타겟 및 고저항 투명도전막의 제조방법 |
JP2003016858A (ja) * | 2001-06-29 | 2003-01-17 | Sanyo Electric Co Ltd | インジウムスズ酸化膜の製造方法 |
EP2280092A1 (en) * | 2001-08-02 | 2011-02-02 | Idemitsu Kosan Co., Ltd. | Sputtering target, transparent conductive film, and their manufacturing method |
JP3871562B2 (ja) * | 2001-12-10 | 2007-01-24 | 日東電工株式会社 | 光学素子機能を有する透明導電膜およびその製造方法 |
JP2004149883A (ja) * | 2002-10-31 | 2004-05-27 | Mitsui Mining & Smelting Co Ltd | 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法 |
JP2006134789A (ja) * | 2004-11-09 | 2006-05-25 | Idemitsu Kosan Co Ltd | 非晶質透明導電膜及び非晶質透明導電膜積層体並びにこれらの製造方法 |
JP2006318803A (ja) * | 2005-05-13 | 2006-11-24 | Sony Corp | 透明電極膜及びその製造方法 |
JP5000230B2 (ja) * | 2006-08-10 | 2012-08-15 | 出光興産株式会社 | 酸化ランタン含有酸化物ターゲット |
KR100787635B1 (ko) * | 2007-01-22 | 2007-12-21 | 삼성코닝 주식회사 | 산화인듐주석 타겟, 이의 제조 방법 및 이로부터 제조된산화인듐주석 투명 전극 |
JP4855964B2 (ja) * | 2007-02-09 | 2012-01-18 | 株式会社アルバック | Ito燒結体、itoスパッタリングターゲット及びその製造方法 |
-
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07161235A (ja) * | 1993-12-13 | 1995-06-23 | Matsushita Electric Ind Co Ltd | 透明導電膜およびその製造方法 |
JP2001151572A (ja) * | 1998-10-13 | 2001-06-05 | Geomatec Co Ltd | 金属酸化物焼結体およびその用途 |
JP2001098359A (ja) * | 1999-09-24 | 2001-04-10 | Tosoh Corp | Mg含有ITOスパッタリングターゲットおよびMg含有ITO蒸着材の製造方法 |
JP2002284570A (ja) * | 2001-03-23 | 2002-10-03 | Tosoh Corp | 酸化物焼結体およびスパッタリングターゲット |
JP2003055759A (ja) * | 2001-08-10 | 2003-02-26 | Tosoh Corp | Mg含有ITOスパッタリングターゲットの製造方法 |
JP2003160861A (ja) * | 2001-11-27 | 2003-06-06 | Tosoh Corp | Mg含有ITOスパッタリングターゲットの製造方法 |
JP2005194594A (ja) * | 2004-01-08 | 2005-07-21 | Tosoh Corp | スパッタリングターゲットおよびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9511417B2 (en) | 2013-11-26 | 2016-12-06 | General Electric Company | Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys |
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TW200926207A (en) | 2009-06-16 |
JP5464319B2 (ja) | 2014-04-09 |
JPWO2009044890A1 (ja) | 2011-02-10 |
KR20100071090A (ko) | 2010-06-28 |
KR20100063137A (ko) | 2010-06-10 |
JPWO2009044891A1 (ja) | 2011-02-10 |
KR20100063136A (ko) | 2010-06-10 |
WO2009044893A1 (ja) | 2009-04-09 |
TW200926209A (en) | 2009-06-16 |
WO2009044891A1 (ja) | 2009-04-09 |
TWI461365B (zh) | 2014-11-21 |
TW200923115A (en) | 2009-06-01 |
TWI430956B (zh) | 2014-03-21 |
WO2009044892A1 (ja) | 2009-04-09 |
KR20100067118A (ko) | 2010-06-18 |
TW200926208A (en) | 2009-06-16 |
JPWO2009044893A1 (ja) | 2011-02-10 |
KR20100063135A (ko) | 2010-06-10 |
JPWO2009044892A1 (ja) | 2011-02-10 |
TW200927657A (en) | 2009-07-01 |
JPWO2009044888A1 (ja) | 2011-02-10 |
JPWO2009044889A1 (ja) | 2011-02-10 |
WO2009044889A1 (ja) | 2009-04-09 |
WO2009044888A1 (ja) | 2009-04-09 |
TW200927658A (en) | 2009-07-01 |
KR20100071089A (ko) | 2010-06-28 |
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WO2009044890A1 (ja) | 2009-04-09 |
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