TW200923115A - Indium oxide target - Google Patents

Abstract

This invention provides an indium oxide target having a sintered oxide which contains an indium oxide, tin and yttrium (Y), wherein the content of tin and yttrium is within the range such that, when y represents a molar ratio of tin with respect to 1 mole of indium, and x represents a molar ratio of yttrium with respect to 1 mole of indium, the value of y is in the range of (-2.5x10<SP>-2</SP>Ln(X)-5.8x10<SP>-2</SP>) or more, and (-1.0x10<SP>-1</SP>Ln(X)-5.0x10<SP>-2</SP>) or less.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an indium oxide-based target which can easily obtain an amorphous film which can be easily patterned by weak acid etching and which is easily crystallized and more The crystallized film can produce a transparent conductive film having low electrical resistance and high transmittance. [Prior Art] Indium oxide-tin oxide (composite oxide of In2〇3-Sn〇2, hereinafter referred to as "ΙΤ0") film is widely used in liquid crystal display devices because of its high visible light transmittance and high conductivity. As a transparent conductive film, a heat-producing film for preventing condensation of glass, an infrared reflecting film, or the like, there is a problem that it is difficult to form an amorphous film. On the other hand, as an amorphous film, although an indium oxide-zinc oxide (IZ0) transparent conductive film is known, such a film has a problem that transparency is inferior to that of the IT0 film and yellow. Therefore, although the applicant of the present invention has proposed an amorphous transparent conductive film which is formed into a plate under a predetermined condition by adding ruthenium to the ruthenium film (Patent Document 1), there is a tendency to increase the resistance after the addition of ruthenium. [Problem to be Solved by the Invention] In view of the above, the present invention has been made in an effort to provide an indium oxide-based target. An amorphous film can be easily obtained, which can be easily patterned by a weak 3 320651 200923115 acid etching to produce a low-resistance and high-transmission α-day crystallized (solution to problem) overshoot Transparent conductive film. In order to solve the above-mentioned problems, the fruit of the fruit has been repeatedly discussed in the "Inorganic film with excellent indium oxide and added transparency, and can be patterned by weak resistance, and it is easy to pay for it." And Gu Yijin's wish for marriage 83) Japan and Japan have already filed a patent application first (Japan is not only a film that can be formed into this: the first form is an indium oxide system, which is :::, Among them, tin and - are relative to the value of two:: &gt;&lt;1〇, 〇〇-5.8&gt;&lt;1(}-2), and ^^ is not 4 (-2.5 ΧΙΟ-2) The value below the range. .]]Ln(x)-5.〇In such a first form A, by having Y' in the specified range, the amorphous lion can be formed without the temperature of 丨_咖, then _ From =;:〇〇,,^(anneallng)4iI^, the second form of the Ming is the oxidized steel system of the i-th form: the molar ratio y of the tin relative to the indium indium The value of 320. 4 200923115 or more expressed by the ratio of (2. 6χ10, (χ) + 5. lxir) expressed by the molar ratio of ^ and tenderness. In the second form, by the prescribed range Contains Sn and Y, and The amorphous film which does not crystallize at less than 200 ° C is formed into a film. The third aspect of the present invention is an indium oxide-based target according to the first or second aspect, wherein tin is made to 1 mol of indium. The molar ratio y is 〇. 23 or less, and the molar ratio X of 钇 of 1 mole of indium is 0.08 or less. In the third aspect, Sn and Y are contained within a predetermined range. The film may be formed into a film having a specific resistance of 3.0×10 −4 Ω·cm or less after annealing at 250° C. (Effect of the Invention) According to the present invention, Sn and Y may be contained within a predetermined range, and may be less than 100° C. The film-forming temperature is such that the amorphous film is formed into a film, and the film can be crystallized by annealing at 100 to 300 ° C. Therefore, an indium oxide-based target can be provided, which can easily obtain an amorphous film, which is amorphous. The film can be easily patterned by weak acid etching, and is easily crystallized, and the film having crystallinity can be formed into a transparent conductive film having low electrical resistance and high transmittance. [Embodiment] The best form of the invention is formed. The transparent conductive film used in the indium oxide-based transparent conductive film of the present invention is splashed The target is an oxide sintered body containing indium oxide and tin and also contains antimony. The antimony may be present in a state in which the oxide is maintained, in a state of a composite oxide, or in a solid solution state. In this case, the indium oxide-based target is a target including an indium oxide-based sintered body, and is used in addition to the sputtering target 5 320651 200923115 when the film is formed into a transparent conductive film by sputtering. A target for ion plating (which may also be referred to as a pellet) used for forming a transparent conductive film by ion plating. The content of bismuth and tin is expressed by the molar ratio y of tin relative to 1 mol of indium in the molar ratio X of 钇 with respect to 1 mol of indium (-2. 5xl (T2Ln(x)-5. The value of 8χ1 (Γ2) is not less than the value of (-1. 0x10—Wx)·^. 0χ1 (Γ2), and the element is added to the transparent conductive film formed by the above-described indium oxide target. The content is the same as the content of the indium oxide-based leather used. When such an indium oxide-based target is a sputtering target, it has a degree of DC magnetron magnetophoresis. The resistance value can be compared with the inexpensive DC magnetron sputtering method. Of course, a high frequency magnetron sputtering device can also be used. By using the indium oxide target, the same composition of indium oxide can be formed. A transparent conductive film. The composition of the indium oxide-based transparent conductive film can be analyzed by ICP after all the single film is dissolved. At the same time, when the film itself is composed of components, it can be cut out by FIB or the like as needed. After the corresponding section, use an elemental analysis device attached to SEM or TEM (EDS or WDS, Aojie (Aug) In particular, the indium oxide-based target of the present invention has an amorphous state by forming a film at a temperature lower than 100 ° C because Sn and Y are contained within a predetermined range. At the same time, the amorphous film has the advantage of being etchable with a weakly acidic etchant. Here, the etching in the present specification is included in the patterning step and is used to obtain the prescribed pattern. The resistivity of the obtained transparent conductive film is different, and the resistivity is 1. OxlO—4 to 1. 0χ10_3 Ω · cm 〇 and the film formed is different, although the type and content of the element 6 320651 200923115 are different. The crystallization temperature differs depending on the content of the additive element contained therein, and although it increases as the content increases, it can be crystallized by annealing at a temperature of from 100 ° C to 300 ° C. From such a temperature The range has been used in general semiconductor processes, so it can also be crystallized in this process. At the same time, in this temperature range, it is better to crystallize at l ° ° C to 300 ° C, and Crystallize at 150 ° C to 250 ° C Preferably, it is preferably crystallized at 200 ° C to 250 ° C. The term "annealing" as used herein refers to heating at a desired temperature for a certain period of time in the atmosphere, in the environment, in a vacuum or the like. For a certain period of time, although it is generally from several minutes to several hours, if the industrial effect is the same, it is preferably in a short time. The transparent conductive film which is crystallized by such annealing can improve the transmittance on the short wavelength side of the rlj, for example, The average transmittance of the wavelength of 400 to 50 nm is set to be 85% or more, and at the same time, there is no problem that the film having a problem of yellowness is yellow. Further, generally, the transmittance on the short-wavelength side is preferably as high as possible. On the other hand, the transparent conductive film after crystallization can improve the etching resistance, and the weakly acidic etchant which can etch the amorphous film cannot be etched. Therefore, the corrosion resistance of the subsequent step and the environmental resistance of the device itself can be improved. Therefore, in the present invention, the crystallization temperature of the film to be formed can be adjusted by changing the content of the additive element. Therefore, after the film formation, heat treatment at a temperature equal to or higher than the crystallization temperature is not required, or the film is maintained in an amorphous state. Or after patterning at 7 320651 200923115, the film is heat treated at a temperature above the crystallization temperature to change its etching resistance. Here, when Ώ ν ^, such as and the content of γ, is relative to 1 mole of indium, b2 y is expressed in terms of Mohr's ratio X with respect to 1 mol of indium (-2.6 Χ π ^ When the value of &amp; 1+5·1x10 2) is equal to or higher than the value of the film, the amorphous film formed is formed into a film so that the film is not crystallized at an annealing temperature of less than 2 mm, and the annealing temperature of C or more is transparent. The conductive film is a more desirable film when considering the film forming step. f ' 亚和, when the molar ratio y of tin relative to 1 mole of indium is 0.23 to ± only 1 to 1 mole of indium, the molar Mo ratio X is 〇·08 below the content ^ ' can be formed into a film It is preferable that the film having a specific resistance after the rc annealing treatment is 3.0 x 10 -4 Ω · cm or less, particularly a low-resistance film. Next, the manufacturing method of the indium oxide-based target relating to the present invention will be described. In the example, the production method is not particularly limited. First, in the starting material which constitutes the sputtering target of the present invention, although the oxide of the constituent element is used, the monomer or compound may be used. A composite oxide or the like is used as a raw material. When a monomer or a compound is used, a step of forming an oxide may be carried out in advance. The method of mixing the raw material powder at a desired blending ratio is not particularly limited. The wet method is formed by various wet methods or dry methods known in the art. For the dry method, for example, a cold press method or a hot press method, etc. In the cold press method, it is mixed. The powder is filled in a forming mold to form a molded body, and then calcined. In the press method, the mixture 8 320651 200923115 is calcined and sintered in a molding die. For the wet method, for example, a filter molding method (refer to Japanese Laid-Open Patent Publication No. Hei No. 1-286002) is preferred. The method is a filter-type molding die composed of a water-insoluble material, which is obtained by decompressing and draining a ceramic raw material slurry to obtain a molded body, and is formed by forming a lower mold having one or more drainage holes. The water-permeable filter above the lower mold for forming is composed of a molding die that is held from above by a sealing material for sealing the filter, and the lower mold for molding, the mold for molding, and the seal. The material and the filter are assembled in a manner that can be separately decomposed, and a filter molding die which can only decompress and drain water in the slurry from the surface side of the filter is used to prepare a mixture of mixed powder, ion-exchanged water and organic additives. After the slurry, the slurry is injected into a filter molding die, and the water in the slurry is decompressed and drained only from the surface side of the filter to form a molded body, and the obtained ceramic formed body is dried and degreased. After calcination, the calcination temperature of the formed body formed by cold pressing or wet method is preferably 1,300 to 1,650 ° C, and more preferably 1,500 to 1,650 ° C. The environment is atmospheric, oxygen, non-oxidizing or vacuum. On the other hand, in the case of hot method, it is better to sinter at around 1,200 °C, and the environment is not In the oxidizing environment, the vacuum environment, etc., in each method, after the sinter is calcined, it is machined and then formed into a predetermined size. (Example) The following is an example in which a sputtering target is taken as an example. The present invention will be described, but the present invention is not limited to these examples. 320651 200923115 (minus mining #£ manufacturing example 1) (γ_ΙΤ〇) (Υ Add 1TO, Y=0. 02-Sn=0· 10) Preparation purity &gt;99. 99% of In2〇3 powder, Sn〇2 powder and purity &gt;99.99% of Y2(C〇3)3 · 3H2 tantalum powder. First, prepare a total amount of 2〇〇g of the ratio of In2〇3 powder 40. 2wt% and Y2(C〇3)3.3H2〇 powder 59.8 wt%, and mix in a ball mill after drying in the atmosphere. 6wt%, Ιη2〇3粉。 8. 6wt%, Ιη2〇3粉85. 6wt% and Sn〇2粉i〇 〇 , rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc The total amount of the sample of .8 wt% is about 1 〇kg (the composition of each metal atom is 卜 = 88. 0 at. %, Sn = 10. 〇at. %, Y = 2. 0 at. %), The powder is mixed in a ball mill, and then added as a PVA aqueous solution of viscous &amp; 后, and then mixed, and then dried, and then cold pressed to obtain a molded body. In the atmosphere, 600 〇 is heated at a rate of 60 t / hr. After defrosting, the formed body was degreased and then calcined at 15501 for 8 hours in an oxygen atmosphere. The specific conditions were as follows: from room temperature to 20 (TC/hour to 8 〇 (rc, From 8 〇 (rCg 4 〇 (rc / hour liter)

After warming to l'55 〇t, after maintaining for 8 hours, it was cooled from 1,55 (TC at 100 〇C / small (1)· to room temperature. After that, the sintered body was processed to obtain a target. 7. 02g/cm3. In the same operation, a sputtering target of Y=〇〇5_Sn=〇.1〇, γ=(). 25_Sn =0.12 was fabricated. Splashing composition of the composition shown in the figure 320651 10 200923115 [Table 1] Sample number one 〆 composition (at%) relative to 1 molar indium ratio Γτη cj 1 1 . S ny Υ S η a 1 9 4 _ 5 5. 0 . 5 ο. 0 0 s 0 . 0 5 3 a 2 — 10.0 〇. 5 ο . 0 0 fi 0 . 112 a 3 15.0 〇. 5 ο 0 0 6 0 . 1 7 8 a 4 79^-J_ 2 0.0 0.5 ο. ο ο β 0 . 2 5 2 a 5 9j^-2—— 5 . 0 1.0 o-oi] 0.053 a 6 1 0 . 0 1.0 0.011 0 . 112 a 7 — 15.0 1. 0 0.012 0. 17 9 a 8 7 9 . 0 2 0.0 1.0 〇- 0 13 0. 2 5 3 a 9 -^X-2__ 5. 〇2. 〇0 . 0 2 2 0.054 a 1 0 10.0 2.0 〇. 0 2 3 0 114 all __ 15.0 2. 〇0.024 0.181 a 1 2 -^Ts. 0 2 0.0 2. 0 0 . 0 2 6 0,256 a 1 3 ^ji-9__ 5 . 0 3. 〇0 . 0 3 3 0 . 0 5 4 a 1 4 10.0 3. 〇0 0 3 4 0.115 a 1 5 — 15.0 3. 〇0 . 0 3 7 0 . 18 3 a 1 6 2 0.0 3. 〇0 - 0 3 9 0 . 2 6 0 a 1 7 9^-9— 5.0 5 〇〇. 0 5 6 0 . 0 5 6 a 1 8 _〇10.0 5. 0 〇. 0 5 9 0 . 118 a 1 9 __ 15.0 5. 〇0 . 0 6 3 0 . 18 8 a 2 0 — — 2 0 . 0 5. 〇〇. 0 6 7 0 . 2 6 7 a 2 1 — 5 . 0 10.0 0. 118 0.059 a 2 2 •^55: 0 10.0 10.0 0. 12 5 0 , 12 5 a 2 3 15. 0 10.0 〇. 13 3 0 · 2 0 0 a 2 4 ^T〇l_〇_ 2 0.0 10.0 0 . 14 3 0 . 2 8 6 a 2 5 1~^fZo〇〇10.000 15.000 0. 200000 0. 133333 a 2 6 •^J3J00· 16. 000 0. lOfi 0. 001192 0. 190703 a 2 7 20. 000 0.010 0. 000125 0. 250031 a 2 8 22.000 0. 030 0. 000385 0. 282160 a 2 9 g2· δ〇〇17.000 0. 500 0. 006061 0. 206061 a 3 0 〇〇〇12. 000 25. 000 0. 396825 0· 190476 (film formation example 1裘3) Film formation example 1 was carried out as follows To 3. The composition of each of the production examples 1 has a composition of Y = 〇. 02 - Sn = 0. 10, Y 2 0. 05-Sn = 〇. 10 and a composition of γ = 〇. 25-Sn = 〇. As the targets of Film Formation Examples 1 to 3, respectively, and these were respectively mounted in a 4 inch DC magnetron sputtering apparatus at a substrate temperature of room temperature (about 20 Å, and while making oxygen 11 320651 200923115 When the gas partial pressure is changed between 0 and 3. Osccm (corresponding to 0 to 1. lxlO_2Pa), a transparent conductive film of each film-forming example is obtained. A film having a thickness of 1,200 A is obtained according to the following sputtering conditions. Dimensions: 0 = 4 inches vs t = 6mm Sputtering method: DC magnetron sputtering device Exhaust device: Rotary pump + cryopump Reach vacuum: 5. 3xl (T6[Pa]

Ar pressure: 4. 0x10—iPa] Oxygen pressure: 0 to 1. lxlO_2 [Pa] Water pressure: 5. Oxl (T6 [Pa] Substrate temperature: room temperature sputtering power: 130 W (power density 1. 6 W/cm2 The substrate was used: Corning # 1737 (glass for liquid crystal display) t = 0.8 mm The resistivity of the film formed by partial pressure of each oxygen gas and the specific resistance after annealing each film at 250 ° C were measured. It is shown in the figure and Fig. 2. From this result, it is known that there is an optimum oxygen partial pressure in any case. It is also known that in any case, the optimum oxygen partial pressure at room temperature is annealed at 250 ° C. The partial pressure of oxygen is different when the film formation is the lowest resistivity. Table 2 shows the partial pressure of oxygen at room temperature and the partial pressure of oxygen at the lowest resistivity after annealing at 250 ° C. Therefore, In Film Forming Examples 1 to 3, it was found that after film formation at a partial pressure of oxygen at 250 ° C and film formation at the lowest specific resistance, the film having the lowest resistivity was obtained by annealing at 250 ° C. 12 320651 200923115 曰 In Table 2 below, the optimum oxygen partial pressure change is indicated by ,, and the optimum oxygen partial pressure change is changed by &gt;&lt; (Test Example 1) ^In the film formation examples 1 to 3, the transparent conductive film which was formed by the optimum oxygen partial pressure at the time of film formation at room temperature was cut out to a size of 13 mm square, and then The samples were annealed at 250 ° C for 1 hour in the atmosphere. The film XRD patterns before and after annealing of Film Formation Examples 1 and 2 were as shown in Item 3. Meanwhile, the film formation examples ' to 3 were formed for film formation at a temperature. The crystal state after annealing at 250 ° C is as shown in Table 2, where 'a is amorphous and c is crystal. From this result, it was confirmed that when the film formation method at room temperature was 2 to 2, The film is an amorphous film, but is formed by 25 (rc annealing after 丨 annealing. On the other hand, in the film forming example 3 with a large amount of addition, even if it is amorphous, it is amorphous, and 25 (TC annealing) It is not crystallized, and it is again 300. (: Annealing is not ^, Huijijing ° (Test Example 2) For each transparent conductive film formed in each film formation example, the optimum oxygen content at the time of film formation at room temperature is measured. The specific resistance was measured by measuring the resistivity of the sample after the annealing of Test Example 1. The specific results are shown in Table 2. As a result, it was found that the resistivity was 3 〇Χΐ (Γ4 Ω·cm or less) in the film formation examples 1 and 2. However, in the film formation example 3, the specific resistance was 7.4 〇χι〇-4 ω · (10) High Test Rate (Test Example 3) 320651 13 200923115 In the film formation examples 1 to 3, the transparent conductive film produced by the optimum oxygen partial pressure at the time of film formation at room temperature was cut out to a size of 13 square squares, and then measured. The transmission spectrum was also measured, and the same transmission spectrum was also measured for the film after annealing in Test Example 1. These results are shown in Figure 4. Meanwhile, the average transmittance after annealing of each of Film Forming Examples 1 to 3 is shown in Table 2. From these results, it is understood that the transmitted light before annealing after film formation can be annealed at 250 ° C for 1 hour to shift the absorption end to the low wavelength side to improve color. (Test Example 4) In the film formation examples 1 to 3, the transparent conductive film produced by the optimum oxygen partial pressure at the time of film formation at room temperature was cut out to a size of 10×50 mm, and then ΙΤ0-05N (oxalic acid system, Kanto Chemical ( As a etchant, it was confirmed that it was possible to perform etching at a temperature of 30 ° C. At the same time, the same test was carried out for the sample after annealing in Test Example 1. As a result of the results, as shown in Table 2, "〇" means etching is possible, and "X" means etching is not possible. From the results, it was also found that since all of the film formation examples 1 to 3 were amorphous films, they were weakly acidic. 14 320651 200923115 [Table 2] Ί4 rate can be [Ο or X] | 〇o 〇辫ίΓ s CM (*5 σ&gt; r*· CO σ&gt; p- w eo ^nSg [a or .] ο ϋ to Crystallinity 成[a or c] | (0 &lt;0 to [x 10-4Q -cm] (eo resistance ratio [x10-4Q-cm] m CD 〇i CO CO optimum oxygen in film formation) Partial pressure change 1[〇 or &gt;&lt;]1 〇O o Relative to indium 1 molar ratio I 0.023 0.059 0.400 Composition [atX! &gt;- s 5 0 01 ** C? o 〇oo in CNi § CO s CO on (D added element &gt;- &gt;&gt;· sample name Y=0.02 Sn=0.10 Y=0.05 Sn=0.10 Y=0.25 Sn=0.12 Film formation example 1 Film formation example 2 3 200923115 (film formation example al To a30) using a target having the composition shown in Table 1 manufactured as described above, after separately mounting on a 4 inch DC magnetron sputtering apparatus, the substrate temperature is room temperature (about 20 ° C). When a partial pressure of oxygen was changed between 0 and 3. Osccm (corresponding to 0 to 1. lxlO_2Pa), a transparent conductive film of each composition was obtained. A film having a thickness of 1,200 A was obtained according to the following sputtering conditions. Geba size: 0 = 4 English leaves t = 6mm Sputtering method: DC magnetron splash Exhaust means: a rotary pump + ultimate vacuum freeze-pump:. 5 3xl (T5 [Pa]

Ar pressure: 4. OxlO_1 [Pa] Oxygen pressure: 0 to 1. lxlO_2 [Pa] Water pressure: 5.0xl (T5 [Pa] substrate temperature. Room temperature sputtering power · 130W (power density 1. 6 W/cm2 Use substrate: Corning # 1737 (glass for liquid crystal display) t = 0. 8_ At this time, although there are many samples, the optimum oxygen partial pressure at room temperature is formed, and the film is the lowest resistivity after annealing at 250 °C. The oxygen content varies from time to time, but depending on the composition, there is sometimes no change in the optimum oxygen partial pressure. As shown in Table 3 below, 〇 indicates the change in the optimum oxygen partial pressure, and X indicates the change in the optimum oxygen partial pressure. At the same time, the transparent conductive film produced by the optimum oxygen partial pressure at the time of film formation at room temperature was cut out to a size of 13 mm square, and then the samples were annealed at 250 ° C for 1 hour in the atmosphere. When the film is formed at room temperature and at 250 ° C, the crystal state after the lapse of 16 320651 200923115 is as shown in Table 3, a is amorphous pq ni , and 'mouth 。 day. P, the crystallization temperature of each component is measured, and the result is as follows. As shown in Table 3, the crystallization temperature is the temperature at which it is crystallized and then crystallized. The crystal form is less than 10{rc.

Further, each of the transparent conductive films which have been formed into a film is formed into a film by a suitable oxygen film at room temperature, and then the electric power (Ω.cm) of the sample which is crystallized after annealing is measured. These results are shown in Table 3. P and the same transparent guide made by the optimum oxygen partial pressure when it is formed into a film.

After Hi cuts out the size of the 13 square, it is measured for the film after annealing. "The average transmittance after annealing is as shown in Table 3. At the same time, 'the optimum reduction at room temperature will be suppressed = and ^ After the crystal, the transparent conductive film is cut out by the large = ^ t A (grass (four), Kanto Chemical Co., Ltd.) _ concentration ring 2) = 1 liquid 'confirm whether the temperature can enter (four) engraved. This etching. The table cannot be left in the moment 'X' means no. (10) Figure 5 is shown. In Fig. 5, film formation of less than (10) C can be achieved.

Crystallized samples, others are indicated by ▲. , do not w with 0 to 300 ° C of the grass of the grass = know that 'when the tin and the content of the book, is relative to 1 mole of indium molar ratio y in comparison with 1 mole of indium molar ratio x table Dry (―2.5χ1〇1η(χ)—5 8 7 B’s ear ratio x

LnCx) '^ η ιη-2\ value above, and at (-1. OxlCT1

When the temperature range is below the range of 2 cents, the material can be borrowed below (10). C and "仃" are formed in an amorphous state, and after film formation, 320651 17 200923115, and then annealed by (10) to fine t, a film can be formed into a film. Γ:,#, and the content of Y, is relative to 1 mole of tin C26 ear 2: relative to 1 mole of indium _ Moer "represented?, the film becomes filmable for annealing in less than the boot Temperature... : A more suitable film when the transparent conductive film forming step is performed at an annealing temperature of 200 C or more. However, the molar ratio y of tin relative to 1 mole of indium is 0 23; for the molar of 1 mole of indium "for the sake of heart; ◦ ' can be formed into a film of 25Gt; The females below the u·cm after the annealing treatment are better for the two „* υχιυ meaning especially low-resistance films. 320651 18 200923115 [Table 3] f

[Simple description of the map]

Fig. 1 (a) and (b) are views showing the relationship between the oxygen pressure and the specific resistance of the film formation example 2 of the present invention. Fig. 2 is a graph showing the relationship between the oxygen content of the film formation example 3 of the present invention and the specific resistance. Fig. 3 (a) and (b) are views showing a film formation example of the present invention, and a film XRD pattern of 2 before and after annealing. 320651 19 200923115 Fig. 4 (a) and (b) are diagrams showing the transmitted light of the film forming examples 1 and 2 of the present invention before and after annealing. Fig. 5 is a view showing the crystallization temperatures of the film formation examples a1 to a30 of the present invention. 20 320651

Claims (1)

200923115 VII. Patent application scope: Indium wire, which has an indium oxide bismuth, #, which has an oxidized sintered body containing yttrium oxide and lanthanum, and has a ratio of tin, tin and (iv) to 1 mol-tin. 7 is relative to the molar ratio X (a)·5χ milk η(χ)_5.δχ1(Γ2) value = upper 'and at (-1 stroke 'heart) -5.〇&gt;&lt;1〇, The value below the range. 2. Indium oxide-based target of the 1st JM of the patent application range, wherein the molar ratio y of tin relative to 1 mole of indium is relative to! Moer Indium • B. Mox 3. As in the case of the indium oxide based on the first item of the patent scope, the towel has a molar ratio of less than 23 to the molar ratio of the tin of the indium indium. The molar ratio X is 0.08 or less. In the case of the indium oxide-based target of the second aspect of the patent application, the molar ratio y of the tin of the moir steel is 0.23 or less, and the molar ratio X of the crucible is 0.08 or less. Where 'relative to 1 relative to 1 mole steel 320651 21