WO2009044889A1 - Indium oxide target - Google Patents

Indium oxide target Download PDF

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Publication number
WO2009044889A1
WO2009044889A1 PCT/JP2008/068098 JP2008068098W WO2009044889A1 WO 2009044889 A1 WO2009044889 A1 WO 2009044889A1 JP 2008068098 W JP2008068098 W JP 2008068098W WO 2009044889 A1 WO2009044889 A1 WO 2009044889A1
Authority
WO
WIPO (PCT)
Prior art keywords
indium oxide
oxide target
indium
tin
yttrium
Prior art date
Application number
PCT/JP2008/068098
Other languages
French (fr)
Japanese (ja)
Inventor
Seiichiro Takahashi
Norihiko Miyashita
Original Assignee
Mitsui Mining & Smelting Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co., Ltd. filed Critical Mitsui Mining & Smelting Co., Ltd.
Priority to JP2008550297A priority Critical patent/JPWO2009044889A1/en
Publication of WO2009044889A1 publication Critical patent/WO2009044889A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Conductive Materials (AREA)

Abstract

Disclosed is an indium oxide target comprising an oxide sintered body which contains yttrium in addition to indium oxide and tin. This indium oxide target is characterized in that the contents of tin and yttrium are within such a range that the molar ratio y of tin relative to 1 mole of indium is not less than (-2.5 x 10-2Ln(x) - 5.8 x 10-2) but not more than (-1.0 x 10-1Ln(x) - 5.0 x 10-2), which values are expressed by using the molar ratio x of yttrium relative to 1 mole of indium.
PCT/JP2008/068098 2007-10-03 2008-10-03 Indium oxide target WO2009044889A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008550297A JPWO2009044889A1 (en) 2007-10-03 2008-10-03 Indium oxide target

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-260436 2007-10-03
JP2007260436 2007-10-03

Publications (1)

Publication Number Publication Date
WO2009044889A1 true WO2009044889A1 (en) 2009-04-09

Family

ID=40526308

Family Applications (6)

Application Number Title Priority Date Filing Date
PCT/JP2008/068097 WO2009044888A1 (en) 2007-10-03 2008-10-03 Indium oxide target
PCT/JP2008/068101 WO2009044892A1 (en) 2007-10-03 2008-10-03 Indium oxide-based transparent electroconductive film and process for producing the indium oxide-based transparent electroconductive film
PCT/JP2008/068102 WO2009044893A1 (en) 2007-10-03 2008-10-03 Indium oxide transparent conductive film and method for producing the same
PCT/JP2008/068099 WO2009044890A1 (en) 2007-10-03 2008-10-03 Indium oxide target
PCT/JP2008/068098 WO2009044889A1 (en) 2007-10-03 2008-10-03 Indium oxide target
PCT/JP2008/068100 WO2009044891A1 (en) 2007-10-03 2008-10-03 Indium oxide-based transparent electroconductive film and process for producing the indium oxide-based transparent electroconductive film

Family Applications Before (4)

Application Number Title Priority Date Filing Date
PCT/JP2008/068097 WO2009044888A1 (en) 2007-10-03 2008-10-03 Indium oxide target
PCT/JP2008/068101 WO2009044892A1 (en) 2007-10-03 2008-10-03 Indium oxide-based transparent electroconductive film and process for producing the indium oxide-based transparent electroconductive film
PCT/JP2008/068102 WO2009044893A1 (en) 2007-10-03 2008-10-03 Indium oxide transparent conductive film and method for producing the same
PCT/JP2008/068099 WO2009044890A1 (en) 2007-10-03 2008-10-03 Indium oxide target

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068100 WO2009044891A1 (en) 2007-10-03 2008-10-03 Indium oxide-based transparent electroconductive film and process for producing the indium oxide-based transparent electroconductive film

Country Status (4)

Country Link
JP (6) JP5464319B2 (en)
KR (6) KR20100063136A (en)
TW (6) TWI461365B (en)
WO (6) WO2009044888A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011037679A (en) * 2009-08-13 2011-02-24 Tosoh Corp Multiple oxide sintered compact, sputtering target, multiple oxide amorphous film and production method thereof, and multiple oxide crystalline film and production method thereof
KR20120070597A (en) * 2009-11-19 2012-06-29 가부시키가이샤 아루박 Manufacturing method and device for transparent conductive film, sputtering target and transparent conductive film
CN102191465A (en) * 2010-03-18 2011-09-21 中国科学院福建物质结构研究所 Indium-doped zinc oxide target material and preparation method of transparent conducting film
KR101198786B1 (en) 2010-06-30 2012-11-07 현대자동차주식회사 Variable compression ratio apparatus
JP5367659B2 (en) * 2010-08-31 2013-12-11 Ｊｘ日鉱日石金属株式会社 Oxide sintered body and oxide semiconductor thin film
JP5367660B2 (en) * 2010-08-31 2013-12-11 Ｊｘ日鉱日石金属株式会社 Oxide sintered body and oxide semiconductor thin film
JP5817327B2 (en) 2010-09-29 2015-11-18 東ソー株式会社 Oxide sintered body, method for producing the same, oxide transparent conductive film obtained using the same, and solar cell
CN103987678B (en) * 2011-12-07 2016-10-12 东曹株式会社 Composite oxide sintered body, sputtering target and oxidic transparent conducting film and manufacture method thereof
US8932518B2 (en) 2012-02-29 2015-01-13 General Electric Company Mold and facecoat compositions
JP5996227B2 (en) * 2012-03-26 2016-09-21 学校法人 龍谷大学 Oxide film and manufacturing method thereof
US9511417B2 (en) 2013-11-26 2016-12-06 General Electric Company Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0570942A (en) * 1991-09-11 1993-03-23 Mitsubishi Materials Corp High density sintered target material for forming electric conductive transparent thin film by sputtering
US5433901A (en) * 1993-02-11 1995-07-18 Vesuvius Crucible Company Method of manufacturing an ITO sintered body
JPH09161542A (en) * 1995-12-07 1997-06-20 Idemitsu Kosan Co Ltd Transparent conductive laminate and touch panel using the same
JP2000169219A (en) * 1998-12-09 2000-06-20 Jiomatetsuku Kk Metal oxide sintered compact and its use

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JPH06157036A (en) * 1992-11-13 1994-06-03 Nippon Soda Co Ltd Production of tin-doped indium oxide film having high resistivity
JP3366046B2 (en) * 1993-03-30 2003-01-14 旭硝子株式会社 Amorphous transparent conductive film
JP3827334B2 (en) * 1993-08-11 2006-09-27 東ソー株式会社 ITO sintered body and sputtering target
JPH07161235A (en) * 1993-12-13 1995-06-23 Matsushita Electric Ind Co Ltd Transparent conductive film and its manufacture
JPH08264023A (en) * 1995-03-27 1996-10-11 Gunze Ltd Transparent conductive film
JPH09175837A (en) * 1995-12-27 1997-07-08 Idemitsu Kosan Co Ltd Electrically conductive transparent film and its production
JPH1195239A (en) * 1997-09-25 1999-04-09 Toshiba Corp Production of liquid crystal display device
JP3806521B2 (en) * 1998-08-27 2006-08-09 旭硝子セラミックス株式会社 Transparent conductive film, sputtering target, and substrate with transparent conductive film
JP3824289B2 (en) * 1998-09-11 2006-09-20 Ｈｏｙａ株式会社 Transparent conductive thin film
JP3215392B2 (en) * 1998-10-13 2001-10-02 ジオマテック株式会社 Metal oxide sintered body and its use
JP3632524B2 (en) * 1999-09-24 2005-03-23 東ソー株式会社 Mg-containing ITO sputtering target and method for producing Mg-containing ITO vapor deposition material
JP4918737B2 (en) * 2001-03-23 2012-04-18 東ソー株式会社 Oxide sintered body and sputtering target
JP4424889B2 (en) * 2001-06-26 2010-03-03 三井金属鉱業株式会社 Sputtering target for high resistance transparent conductive film and method for producing high resistance transparent conductive film
TW570909B (en) * 2001-06-26 2004-01-11 Mitsui Mining & Smelting Co Sputtering target for forming transparent conductive film of high electric resistance and method for producing transparent conductive film of high electric resistance
JP2003016858A (en) * 2001-06-29 2003-01-17 Sanyo Electric Co Ltd Manufacturing method of indium tin oxide film
WO2003014409A1 (en) * 2001-08-02 2003-02-20 Idemitsu Kosan Co., Ltd. Sputtering target, transparent conductive film, and their manufacturing method
JP4904645B2 (en) * 2001-08-10 2012-03-28 東ソー株式会社 Method for producing Mg-containing ITO sputtering target
JP4075361B2 (en) * 2001-11-27 2008-04-16 東ソー株式会社 Method for producing Mg-containing ITO sputtering target
JP3871562B2 (en) * 2001-12-10 2007-01-24 日東電工株式会社 Transparent conductive film having optical element function and method for producing the same
JP2004149883A (en) * 2002-10-31 2004-05-27 Mitsui Mining & Smelting Co Ltd Sputtering target for high resistance transparent conductive film, and manufacturing method of high resistance transparent conductive film
JP4457669B2 (en) * 2004-01-08 2010-04-28 東ソー株式会社 Sputtering target and manufacturing method thereof
JP2006134789A (en) * 2004-11-09 2006-05-25 Idemitsu Kosan Co Ltd Amorphous transparent conductive film, amorphous transparent conductive film layered product and manufacturing method thereof
JP2006318803A (en) * 2005-05-13 2006-11-24 Sony Corp Transparent electrode film and manufacturing method of the same
JP5000230B2 (en) * 2006-08-10 2012-08-15 出光興産株式会社 Lanthanum oxide containing oxide target
KR100787635B1 (en) * 2007-01-22 2007-12-21 삼성코닝 주식회사 Indium tin oxide target, method of manufacturing the same and transparent electrode manufactured by using the same
JP4855964B2 (en) * 2007-02-09 2012-01-18 株式会社アルバック ITO sintered body, ITO sputtering target and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0570942A (en) * 1991-09-11 1993-03-23 Mitsubishi Materials Corp High density sintered target material for forming electric conductive transparent thin film by sputtering
US5433901A (en) * 1993-02-11 1995-07-18 Vesuvius Crucible Company Method of manufacturing an ITO sintered body
JPH09161542A (en) * 1995-12-07 1997-06-20 Idemitsu Kosan Co Ltd Transparent conductive laminate and touch panel using the same
JP2000169219A (en) * 1998-12-09 2000-06-20 Jiomatetsuku Kk Metal oxide sintered compact and its use

Also Published As

Publication number Publication date
TW200923115A (en) 2009-06-01
TW200926208A (en) 2009-06-16
TW200926209A (en) 2009-06-16
TWI430956B (en) 2014-03-21
JPWO2009044890A1 (en) 2011-02-10
TW200926207A (en) 2009-06-16
WO2009044891A1 (en) 2009-04-09
TWI461365B (en) 2014-11-21
TW200927658A (en) 2009-07-01
WO2009044892A1 (en) 2009-04-09
JPWO2009044888A1 (en) 2011-02-10
JP5464319B2 (en) 2014-04-09
WO2009044888A1 (en) 2009-04-09
WO2009044893A1 (en) 2009-04-09
KR20100063137A (en) 2010-06-10
KR20100063136A (en) 2010-06-10
KR20100067118A (en) 2010-06-18
JPWO2009044891A1 (en) 2011-02-10
WO2009044890A1 (en) 2009-04-09
KR20100071090A (en) 2010-06-28
KR101200386B1 (en) 2012-11-12
JPWO2009044892A1 (en) 2011-02-10
TW200927657A (en) 2009-07-01
KR20100063135A (en) 2010-06-10
JPWO2009044889A1 (en) 2011-02-10
KR20100071089A (en) 2010-06-28
JP5237827B2 (en) 2013-07-17
JPWO2009044893A1 (en) 2011-02-10

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