WO2009044888A1 - Indium oxide target - Google Patents
Indium oxide target Download PDFInfo
- Publication number
- WO2009044888A1 WO2009044888A1 PCT/JP2008/068097 JP2008068097W WO2009044888A1 WO 2009044888 A1 WO2009044888 A1 WO 2009044888A1 JP 2008068097 W JP2008068097 W JP 2008068097W WO 2009044888 A1 WO2009044888 A1 WO 2009044888A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- indium oxide
- oxide target
- mole
- indium
- less
- Prior art date
Links
- 229910003437 indium oxide Inorganic materials 0.000 title abstract 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title abstract 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Conductive Materials (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008550296A JP5464319B2 (en) | 2007-10-03 | 2008-10-03 | Indium oxide target |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007260436 | 2007-10-03 | ||
JP2007-260436 | 2007-10-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009044888A1 true WO2009044888A1 (en) | 2009-04-09 |
Family
ID=40526308
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/068099 WO2009044890A1 (en) | 2007-10-03 | 2008-10-03 | Indium oxide target |
PCT/JP2008/068098 WO2009044889A1 (en) | 2007-10-03 | 2008-10-03 | Indium oxide target |
PCT/JP2008/068100 WO2009044891A1 (en) | 2007-10-03 | 2008-10-03 | Indium oxide-based transparent electroconductive film and process for producing the indium oxide-based transparent electroconductive film |
PCT/JP2008/068097 WO2009044888A1 (en) | 2007-10-03 | 2008-10-03 | Indium oxide target |
PCT/JP2008/068102 WO2009044893A1 (en) | 2007-10-03 | 2008-10-03 | Indium oxide transparent conductive film and method for producing the same |
PCT/JP2008/068101 WO2009044892A1 (en) | 2007-10-03 | 2008-10-03 | Indium oxide-based transparent electroconductive film and process for producing the indium oxide-based transparent electroconductive film |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/068099 WO2009044890A1 (en) | 2007-10-03 | 2008-10-03 | Indium oxide target |
PCT/JP2008/068098 WO2009044889A1 (en) | 2007-10-03 | 2008-10-03 | Indium oxide target |
PCT/JP2008/068100 WO2009044891A1 (en) | 2007-10-03 | 2008-10-03 | Indium oxide-based transparent electroconductive film and process for producing the indium oxide-based transparent electroconductive film |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/068102 WO2009044893A1 (en) | 2007-10-03 | 2008-10-03 | Indium oxide transparent conductive film and method for producing the same |
PCT/JP2008/068101 WO2009044892A1 (en) | 2007-10-03 | 2008-10-03 | Indium oxide-based transparent electroconductive film and process for producing the indium oxide-based transparent electroconductive film |
Country Status (4)
Country | Link |
---|---|
JP (6) | JPWO2009044892A1 (en) |
KR (6) | KR101200386B1 (en) |
TW (6) | TW200926208A (en) |
WO (6) | WO2009044890A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011037679A (en) * | 2009-08-13 | 2011-02-24 | Tosoh Corp | Multiple oxide sintered compact, sputtering target, multiple oxide amorphous film and production method thereof, and multiple oxide crystalline film and production method thereof |
CN102191465A (en) * | 2010-03-18 | 2011-09-21 | 中国科学院福建物质结构研究所 | Indium-doped zinc oxide target material and preparation method of transparent conducting film |
WO2012043570A1 (en) | 2010-09-29 | 2012-04-05 | 東ソー株式会社 | Sintered oxide material, method for manufacturing same, sputtering target, oxide transparent electrically conductive film, method for manufacturing same, and solar cell |
JP2015158014A (en) * | 2009-11-19 | 2015-09-03 | 株式会社アルバック | Manufacturing method of transparent conductive film, manufacturing apparatus of transparent conductive film, sputtering target, and transparent conductive film |
US9511417B2 (en) | 2013-11-26 | 2016-12-06 | General Electric Company | Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys |
US9802243B2 (en) | 2012-02-29 | 2017-10-31 | General Electric Company | Methods for casting titanium and titanium aluminide alloys |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101198786B1 (en) | 2010-06-30 | 2012-11-07 | 현대자동차주식회사 | Variable compression ratio apparatus |
JP5367660B2 (en) * | 2010-08-31 | 2013-12-11 | Jx日鉱日石金属株式会社 | Oxide sintered body and oxide semiconductor thin film |
JP5367659B2 (en) * | 2010-08-31 | 2013-12-11 | Jx日鉱日石金属株式会社 | Oxide sintered body and oxide semiconductor thin film |
MY170854A (en) * | 2011-12-07 | 2019-09-10 | Tosoh Corp | Complex oxide sintered body, sputtering target, transparent conductive oxide film, and method for producing same |
JP5996227B2 (en) * | 2012-03-26 | 2016-09-21 | 学校法人 龍谷大学 | Oxide film and manufacturing method thereof |
Citations (6)
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JP2003105532A (en) * | 2001-06-26 | 2003-04-09 | Mitsui Mining & Smelting Co Ltd | Sputtering target for highly resistant transparent conductive film, and manufacturing method of highly resistant transparent conductive film |
JP2004149883A (en) * | 2002-10-31 | 2004-05-27 | Mitsui Mining & Smelting Co Ltd | Sputtering target for high resistance transparent conductive film, and manufacturing method of high resistance transparent conductive film |
JP2006318803A (en) * | 2005-05-13 | 2006-11-24 | Sony Corp | Transparent electrode film and manufacturing method of the same |
JP2008038234A (en) * | 2006-08-10 | 2008-02-21 | Idemitsu Kosan Co Ltd | Oxide target containing lanthanum oxide |
JP2008174829A (en) * | 2007-01-22 | 2008-07-31 | Samsung Corning Co Ltd | Ito target, method of manufacturing the ito target, and ito transparent electrode |
JP2008195554A (en) * | 2007-02-09 | 2008-08-28 | Ulvac Material Kk | Ito sintered compact, ito sputtering target and its manufacturing method |
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JPH0570942A (en) * | 1991-09-11 | 1993-03-23 | Mitsubishi Materials Corp | High density sintered target material for forming electric conductive transparent thin film by sputtering |
JPH06157036A (en) * | 1992-11-13 | 1994-06-03 | Nippon Soda Co Ltd | Production of tin-doped indium oxide film having high resistivity |
US5433901A (en) * | 1993-02-11 | 1995-07-18 | Vesuvius Crucible Company | Method of manufacturing an ITO sintered body |
JP3366046B2 (en) * | 1993-03-30 | 2003-01-14 | 旭硝子株式会社 | Amorphous transparent conductive film |
JP3827334B2 (en) * | 1993-08-11 | 2006-09-27 | 東ソー株式会社 | ITO sintered body and sputtering target |
JPH07161235A (en) * | 1993-12-13 | 1995-06-23 | Matsushita Electric Ind Co Ltd | Transparent conductive film and its manufacture |
JPH08264023A (en) * | 1995-03-27 | 1996-10-11 | Gunze Ltd | Transparent conductive film |
JP3943617B2 (en) * | 1995-12-07 | 2007-07-11 | 出光興産株式会社 | Transparent conductive laminate and touch panel using the same |
JPH09175837A (en) * | 1995-12-27 | 1997-07-08 | Idemitsu Kosan Co Ltd | Electrically conductive transparent film and its production |
JPH1195239A (en) * | 1997-09-25 | 1999-04-09 | Toshiba Corp | Production of liquid crystal display device |
JP3806521B2 (en) * | 1998-08-27 | 2006-08-09 | 旭硝子セラミックス株式会社 | Transparent conductive film, sputtering target, and substrate with transparent conductive film |
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JP3215392B2 (en) * | 1998-10-13 | 2001-10-02 | ジオマテック株式会社 | Metal oxide sintered body and its use |
JP2000169219A (en) * | 1998-12-09 | 2000-06-20 | Jiomatetsuku Kk | Metal oxide sintered compact and its use |
JP3632524B2 (en) * | 1999-09-24 | 2005-03-23 | 東ソー株式会社 | Mg-containing ITO sputtering target and method for producing Mg-containing ITO vapor deposition material |
JP4918737B2 (en) * | 2001-03-23 | 2012-04-18 | 東ソー株式会社 | Oxide sintered body and sputtering target |
KR100744017B1 (en) * | 2001-06-26 | 2007-07-30 | 미츠이 긴조쿠 고교 가부시키가이샤 | Sputtering target for forming transparent conductive film of high electric resistance and method for producing transparent conductive film of high electric resistance |
JP2003016858A (en) * | 2001-06-29 | 2003-01-17 | Sanyo Electric Co Ltd | Manufacturing method of indium tin oxide film |
EP2278041B1 (en) * | 2001-08-02 | 2012-05-23 | Idemitsu Kosan Co., Ltd. | Sputtering target and transparent conductive film obtainable by the target |
JP4904645B2 (en) * | 2001-08-10 | 2012-03-28 | 東ソー株式会社 | Method for producing Mg-containing ITO sputtering target |
JP4075361B2 (en) * | 2001-11-27 | 2008-04-16 | 東ソー株式会社 | Method for producing Mg-containing ITO sputtering target |
JP3871562B2 (en) * | 2001-12-10 | 2007-01-24 | 日東電工株式会社 | Transparent conductive film having optical element function and method for producing the same |
JP4457669B2 (en) * | 2004-01-08 | 2010-04-28 | 東ソー株式会社 | Sputtering target and manufacturing method thereof |
JP2006134789A (en) * | 2004-11-09 | 2006-05-25 | Idemitsu Kosan Co Ltd | Amorphous transparent conductive film, amorphous transparent conductive film layered product and manufacturing method thereof |
-
2008
- 2008-10-03 TW TW097138082A patent/TW200926208A/en unknown
- 2008-10-03 JP JP2008550298A patent/JPWO2009044892A1/en active Pending
- 2008-10-03 TW TW097138074A patent/TWI430956B/en active
- 2008-10-03 JP JP2008550297A patent/JPWO2009044889A1/en not_active Withdrawn
- 2008-10-03 JP JP2008550294A patent/JPWO2009044891A1/en active Pending
- 2008-10-03 WO PCT/JP2008/068099 patent/WO2009044890A1/en active Application Filing
- 2008-10-03 WO PCT/JP2008/068098 patent/WO2009044889A1/en active Application Filing
- 2008-10-03 KR KR1020107009350A patent/KR101200386B1/en active IP Right Grant
- 2008-10-03 KR KR1020107009344A patent/KR20100063136A/en not_active Application Discontinuation
- 2008-10-03 KR KR1020107009346A patent/KR20100067118A/en not_active Application Discontinuation
- 2008-10-03 TW TW097138068A patent/TW200926207A/en unknown
- 2008-10-03 TW TW097138073A patent/TWI461365B/en active
- 2008-10-03 KR KR1020107009349A patent/KR20100063137A/en not_active Application Discontinuation
- 2008-10-03 WO PCT/JP2008/068100 patent/WO2009044891A1/en active Application Filing
- 2008-10-03 KR KR1020107009343A patent/KR20100063135A/en not_active Application Discontinuation
- 2008-10-03 JP JP2008550292A patent/JP5237827B2/en active Active
- 2008-10-03 JP JP2008550302A patent/JPWO2009044893A1/en active Pending
- 2008-10-03 JP JP2008550296A patent/JP5464319B2/en active Active
- 2008-10-03 KR KR1020107009347A patent/KR20100071089A/en not_active Application Discontinuation
- 2008-10-03 WO PCT/JP2008/068097 patent/WO2009044888A1/en active Application Filing
- 2008-10-03 WO PCT/JP2008/068102 patent/WO2009044893A1/en active Application Filing
- 2008-10-03 TW TW097138079A patent/TW200923115A/en unknown
- 2008-10-03 TW TW097138083A patent/TW200926209A/en unknown
- 2008-10-03 WO PCT/JP2008/068101 patent/WO2009044892A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003105532A (en) * | 2001-06-26 | 2003-04-09 | Mitsui Mining & Smelting Co Ltd | Sputtering target for highly resistant transparent conductive film, and manufacturing method of highly resistant transparent conductive film |
JP2004149883A (en) * | 2002-10-31 | 2004-05-27 | Mitsui Mining & Smelting Co Ltd | Sputtering target for high resistance transparent conductive film, and manufacturing method of high resistance transparent conductive film |
JP2006318803A (en) * | 2005-05-13 | 2006-11-24 | Sony Corp | Transparent electrode film and manufacturing method of the same |
JP2008038234A (en) * | 2006-08-10 | 2008-02-21 | Idemitsu Kosan Co Ltd | Oxide target containing lanthanum oxide |
JP2008174829A (en) * | 2007-01-22 | 2008-07-31 | Samsung Corning Co Ltd | Ito target, method of manufacturing the ito target, and ito transparent electrode |
JP2008195554A (en) * | 2007-02-09 | 2008-08-28 | Ulvac Material Kk | Ito sintered compact, ito sputtering target and its manufacturing method |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011037679A (en) * | 2009-08-13 | 2011-02-24 | Tosoh Corp | Multiple oxide sintered compact, sputtering target, multiple oxide amorphous film and production method thereof, and multiple oxide crystalline film and production method thereof |
JP2015158014A (en) * | 2009-11-19 | 2015-09-03 | 株式会社アルバック | Manufacturing method of transparent conductive film, manufacturing apparatus of transparent conductive film, sputtering target, and transparent conductive film |
CN102191465A (en) * | 2010-03-18 | 2011-09-21 | 中国科学院福建物质结构研究所 | Indium-doped zinc oxide target material and preparation method of transparent conducting film |
WO2012043570A1 (en) | 2010-09-29 | 2012-04-05 | 東ソー株式会社 | Sintered oxide material, method for manufacturing same, sputtering target, oxide transparent electrically conductive film, method for manufacturing same, and solar cell |
US9399815B2 (en) | 2010-09-29 | 2016-07-26 | Tosoh Corporation | Sintered oxide material, method for manufacturing same, sputtering target, oxide transparent electrically conductive film, method for manufacturing same, and solar cell |
US9802243B2 (en) | 2012-02-29 | 2017-10-31 | General Electric Company | Methods for casting titanium and titanium aluminide alloys |
US9511417B2 (en) | 2013-11-26 | 2016-12-06 | General Electric Company | Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys |
Also Published As
Publication number | Publication date |
---|---|
WO2009044889A1 (en) | 2009-04-09 |
TW200927658A (en) | 2009-07-01 |
TW200923115A (en) | 2009-06-01 |
JPWO2009044892A1 (en) | 2011-02-10 |
JPWO2009044888A1 (en) | 2011-02-10 |
TW200926208A (en) | 2009-06-16 |
KR20100063135A (en) | 2010-06-10 |
JPWO2009044893A1 (en) | 2011-02-10 |
WO2009044891A1 (en) | 2009-04-09 |
KR20100063137A (en) | 2010-06-10 |
WO2009044892A1 (en) | 2009-04-09 |
KR101200386B1 (en) | 2012-11-12 |
KR20100071089A (en) | 2010-06-28 |
KR20100063136A (en) | 2010-06-10 |
JPWO2009044890A1 (en) | 2011-02-10 |
JP5237827B2 (en) | 2013-07-17 |
JPWO2009044891A1 (en) | 2011-02-10 |
JPWO2009044889A1 (en) | 2011-02-10 |
WO2009044893A1 (en) | 2009-04-09 |
TW200926207A (en) | 2009-06-16 |
TWI430956B (en) | 2014-03-21 |
TW200926209A (en) | 2009-06-16 |
WO2009044890A1 (en) | 2009-04-09 |
KR20100071090A (en) | 2010-06-28 |
JP5464319B2 (en) | 2014-04-09 |
TW200927657A (en) | 2009-07-01 |
KR20100067118A (en) | 2010-06-18 |
TWI461365B (en) | 2014-11-21 |
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