JP2005135649A - Indium oxide based transparent conductive film and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an indium oxide based transparent conductive film having a smooth surface and comparatively low resistance, and to provide its manufacturing method. <P>SOLUTION: This indium oxide based transparent conductive film formed by using an indium oxide based sputtering target contains indium oxide, tin oxide if required, and silica oxide, and it is not crystallized. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an indium oxide-based transparent conductive film having a smooth surface and relatively low resistance, and capable of patterning relatively easily by weak acid etching, and a method for manufacturing the same.

An indium oxide-tin oxide (In ₂ O ₃ —SnO ₂ composite oxide, hereinafter referred to as “ITO”) film has high visible light permeability and high conductivity, so that it is a liquid crystal display device or glass as a transparent conductive film. It is widely used for heat generation films for preventing condensation, infrared reflection films, and the like.

  Such an ITO transparent conductive film is used for various applications such as a flat panel display (FPD), but surface smoothness becomes a problem particularly in applications such as thin film lamination, such as organic EL elements.

  In general, in order to smooth the surface state of the ITO film, a method of forming an amorphous ITO film by forming the film at a low temperature is known. However, in order to maintain the amorphous film, the film is formed. Then, there is a problem that all of the film formation and post-treatment to be laminated thereon are required to be at a low temperature of, for example, 150 ° C. or lower.

  Therefore, a manufacturing method has been proposed in which an ITO film is formed and then flattened (see Patent Document 1).

  In addition, although the thing which added silicon and other elements to the ITO film | membrane as a high resistance transparent conductive film is proposed as a touch-panel use etc., the manufacturing conditions of a film | membrane and the property of a film | membrane are not mentioned in detail (patent document) 2-4).

JP 2000-106275 A (Claims) JP-A-4-206403 (Claims) JP 2003-105532 A (Claims) Japanese Patent Laying-Open No. 2003-277721 (Claims)

  In view of such circumstances, it is an object of the present invention to provide an indium oxide-based transparent conductive film having a smooth surface state and a relatively low resistance, and a method for producing the same.

  As a result of various investigations in order to solve the above-mentioned problems, the present invention is promising for indium oxide-based transparent conductive films to which silicon oxide is added, not only for high resistance applications but also for applications requiring smoothness. It was found that a transparent conductive film that is smooth and has a relatively low resistance can be obtained by manufacturing under the manufacturing conditions described above, and the present invention has been completed.

  The first aspect of the present invention is an indium oxide-based transparent conductive film formed using an indium oxide-based sputtering target, containing indium oxide and, if necessary, tin oxide and silicon oxide. The indium oxide-based transparent conductive film is not crystallized.

  In the first aspect, if the indium oxide-based transparent conductive film containing silicon oxide is not crystallized, that is, if it is amorphous, the surface is smooth and a relatively low resistance can be maintained.

  According to a second aspect of the present invention, there is provided an indium oxide-based transparent conductive film according to the first aspect, wherein the indium oxide-based transparent conductive film is formed under a temperature condition of room temperature or higher and lower than 250 ° C.

  In the second aspect, the indium oxide-based transparent conductive film formed using the indium oxide-based sputtering target containing silicon oxide is not crystallized if formed at a temperature of room temperature or higher and lower than 250 ° C. That is, it is amorphous and can maintain a relatively low resistance.

  According to a third aspect of the present invention, there is provided the indium oxide-based transparent conductive film according to the first or second aspect, which is not subjected to a heat treatment at a temperature of 250 ° C. or higher after the film formation.

  In the third embodiment, crystallization does not occur even in post-treatment after film formation, and low resistance and smoothness are maintained.

  According to a fourth aspect of the present invention, there is provided the indium oxide-based transparent conductive film according to the first or second aspect, wherein the film is not subjected to a heat treatment at a temperature higher than a crystallization temperature after film formation.

  In the fourth aspect, even after post-treatment after film formation, crystallization does not occur and smoothness is maintained.

  According to a fifth aspect of the present invention, in any one of the first to fourth aspects, the silicon is contained in an amount of 0.00001 to 0.35 mole relative to 1 mole of indium. In the membrane.

  In the fifth aspect, the crystallization temperature can be changed by changing the amount of silicon oxide added.

  According to a sixth aspect of the present invention, in any one of the first to fifth aspects, tin (Sn) is contained in an amount of 0 to 0.3 mol per mol of indium. It is in the conductive film.

  In the sixth aspect, an indium oxide-based transparent conductive film mainly containing indium oxide and containing tin oxide as necessary is obtained.

  The seventh aspect of the present invention is transparent by forming a film at room temperature or higher and lower than 250 ° C. using an indium oxide-based sputtering target containing indium oxide and, if necessary, tin oxide and containing silicon oxide. An indium oxide-based transparent conductive film manufacturing method is characterized by forming a conductive film.

  In such a seventh aspect, when an indium oxide-based transparent conductive film is formed using an indium oxide-based sputtering target containing silicon oxide, it is crystallized by forming a film at a temperature of room temperature or higher and lower than 250 ° C. That is, it is amorphous and can maintain a relatively low resistance.

  According to an eighth aspect of the present invention, in the seventh aspect, the transparent conductive film is not crystallized after being subjected to a heat treatment at a temperature of 250 ° C. or higher after film formation. It is in the manufacturing method of a film | membrane.

  In the eighth aspect, crystallization does not occur even in post-treatment after film formation, and low resistance and smoothness are maintained.

  According to a ninth aspect of the present invention, in the seventh aspect, the transparent conductive film is not crystallized after film formation without being subjected to a heat treatment at a temperature equal to or higher than a crystallization temperature. It exists in the manufacturing method of an electrically conductive film.

  In the ninth aspect, even after post-treatment after film formation, crystallization does not occur and smoothness is maintained.

  According to a tenth aspect of the present invention, in any one of the seventh to ninth aspects, the transparent conductive film is crystallized after being patterned and then heat-treated at a temperature equal to or higher than a crystallization temperature. There is a method for manufacturing an indium oxide-based transparent conductive film.

  In the tenth aspect, after patterning, it can be crystallized by heat treatment as necessary.

  According to an eleventh aspect of the present invention, in any one of the seventh to tenth aspects, the transparent conductive film is crystallized by heat treatment at a temperature equal to or higher than a crystallization temperature after film formation. It exists in the manufacturing method of an indium oxide type transparent conductive film.

  In the eleventh aspect, after film formation, it can be crystallized by heat treatment as necessary.

  A twelfth aspect of the present invention is the method for producing an indium oxide-based transparent conductive film according to any one of the seventh to eleventh aspects, wherein the transparent conductive film is formed by DC magnetron sputtering.

  In the twelfth aspect, a transparent conductive film having a smooth surface state can be produced by DC magnetron sputtering.

  According to a thirteenth aspect of the present invention, in any one of the seventh to twelfth aspects, the silicon is contained in an amount of 0.00001 to 0.35 mole relative to 1 mole of indium. It is in the manufacturing method of a film | membrane.

  In the thirteenth aspect, the crystallization temperature of the transparent conductive film to be formed can be changed by changing the amount of silicon oxide added.

  A fourteenth aspect of the present invention is the transparent indium oxide system according to any one of the seventh to thirteenth aspects, wherein tin (Sn) is contained in an amount of 0 to 0.3 mol per 1 mol of indium. It exists in the manufacturing method of an electrically conductive film.

  In the fourteenth aspect, an indium oxide-based transparent conductive film mainly containing indium oxide and containing tin oxide as required can be produced.

  As described above, according to the present invention, if the indium oxide-based transparent conductive film containing silicon oxide is not crystallized, that is, if it is amorphous, the surface is smooth and relatively low resistance is maintained. In addition, when producing an indium oxide-based transparent conductive film, an indium oxide-based sputtering target containing indium oxide and, if necessary, tin oxide, and containing silicon oxide, and at room temperature or higher is used. By performing film formation at a temperature lower than 0 ° C. and subsequent post-treatment, it is possible to obtain a transparent conductive film having a smooth planar state and a relatively low resistance.

  The sputtering target for transparent conductive film used for forming the indium oxide-based transparent conductive film of the present invention is mainly composed of indium oxide and contains tin oxide as required, and an oxide firing containing silicon oxide. The silicon oxide is not particularly limited as long as it is an oxide, a composite oxide, or a solid solution.

  The silicon oxide content is desirably in the range of 0.00001 to 0.35 mol, preferably 0.01 to 0.3 mol, per mol of indium. If it is less than this, the effect of addition is not remarkable, and if it is more than this, the formed transparent conductive film is too high in resistance.

  Moreover, tin (Sn) is 0-0.3 mol with respect to 1 mol of indium. When tin is contained, 0.001 to 0.3 mol, preferably 0.01 to 0.2 mol, more preferably 0.05 to 0.12 mol, per 1 mol of indium. It is desirable to contain. Within this range, the density and mobility of carrier electrons in the sputtering target can be appropriately controlled to keep the conductivity in a good range. Further, addition beyond this range is not preferable because the mobility of carrier electrons of the sputtering target is lowered and the conductivity is deteriorated.

  Since such a sputtering target has a resistance value that can be sputtered by DC magnetron sputtering, it can be sputtered by a relatively inexpensive DC magnetron sputtering. Of course, a high-frequency magnetron sputtering apparatus may be used. .

  By using such a sputtering target for a transparent conductive film, an indium oxide-based transparent conductive film having almost the same composition can be formed. If it is performed under a low temperature condition, preferably a temperature condition lower than 250 ° C., and thereafter not heat-treated at a temperature condition of 250 ° C. or higher, the amorphous state and the low resistance state are maintained, and the smoothness of the surface state is maintained. Maintained.

  In addition, since the crystallization temperature of the formed film contains silicon oxide, it is higher than 180 ° C. of ITO, is at least about 250 ° C., and increases as the addition amount increases, so that silicon is 1 mol of indium. When 0.35 mol is contained, the crystallization does not occur even at 600 ° C. Therefore, according to the present invention, even when film formation or heat treatment is performed at a relatively high temperature, the amorphous state of the transparent conductive film is maintained, and the smoothness of the surface state is maintained.

  On the other hand, according to the present invention, the crystallization temperature after film formation can be set to a desired temperature by changing the amount of silicon oxide added, so that heat treatment at a temperature higher than the crystallization temperature is not applied after film formation. Thus, the amorphous state that is not crystallized may be maintained to maintain the smoothness of the surface state. Alternatively, after patterning after film formation, heat treatment is performed at a temperature equal to or higher than the temperature for crystallization. The etching resistance characteristics may be changed.

  Next, although the manufacturing method of the sputtering target used by this invention is demonstrated, this is only illustrated and the manufacturing method is not specifically limited.

First, the starting material constituting the sputtering target of the present invention is generally In ₂ O ₃ , SnO ₂ , SiO ₂ powder. Furthermore, these simple substances, compounds, complex oxides, and the like may be used as raw materials. When using a simple substance or a compound, it is made to go through a process of making it oxide in advance.

  A method of mixing and molding these raw material powders at a desired mixing ratio is not particularly limited, and various conventionally known wet methods or dry methods can be used.

  Examples of the dry method include a cold press method and a hot press method. In the cold press method, a mixed powder is filled in a mold to produce a molded body, which is fired and sintered in an air atmosphere or an oxygen atmosphere. In the hot press method, the mixed powder is directly sintered in a mold.

  As the wet method, for example, it is preferable to use a filtration molding method (see JP-A-11-286002). This filtration molding method is a filtration molding die made of a water-insoluble material for obtaining a molded body by draining water from a ceramic raw material slurry under reduced pressure, and a lower molding die having one or more drain holes And a water-permeable filter placed on the molding lower mold, and a molding mold clamped from the upper surface side through a sealing material for sealing the filter, the molding lower mold, Forming mold, sealing material, and filter are assembled so that they can be disassembled respectively. Using a filtration mold that drains water in the slurry under reduced pressure only from the filter surface side, mixed powder, ion-exchanged water and organic Prepare a slurry consisting of additives, inject the slurry into a filtration mold, drain the water in the slurry only from the filter surface side, and produce a molded body. Is baked after drying and degreasing.

  In each method, the firing temperature is preferably 1300 to 1600 ° C, more preferably 1300 to 1450 ° C. Thereafter, machining for forming / processing is performed to a predetermined dimension to obtain a target.

  EXAMPLES Hereinafter, although this invention is demonstrated based on an Example, it is not limited to this.

(Sputtering target production example 1)
In ₂ O ₃ powder and SnO ₂ powder with a purity> 99.99%, and SiO ₂ powder with a purity> 99.9% were prepared. About 1.5 kg of this powder was prepared in a total amount of SnO ₂ 10 wt%, SiO ₂ 1 wt%, In ₂ O ₃ 89 wt% (Si corresponds to about 0.03 mol with respect to In 1 mol, Sn Corresponds to about 0.10 mol), and a molded body was obtained by a filtration molding method. Thereafter, the fired body was fired and sintered at 1550 ° C. for 8 hours in an oxygen atmosphere. This sintered body was processed to obtain a target having a relative density of 100% with respect to the theoretical density. The bulk resistivity of this target was 1.4 × 10 ⁻⁴ Ωcm.

(Sputtering target production example 2)
Other than the ratio of SnO ₂ 10 wt%, SiO ₂ 2 wt%, In ₂ O ₃ 88 wt% (Si is equivalent to about 0.05 mol and Sn is equivalent to about 0.10 mol with respect to 1 mol of In). Prepared a target in the same manner as in Example 1, and further formed a film in the same manner. The bulk resistivity of this target was 1.6 × 10 ⁻⁴ Ωcm.

(Sputtering target production example 3)
Other than SnO ₂ 10 wt%, SiO ₂ 5 wt%, In ₂ O ₃ 85 wt% (Si is equivalent to about 0.14 mol and Sn is equivalent to about 0.11 mol with respect to In 1 mol) Prepared a target in the same manner as in Example 1, and further formed a film in the same manner. The bulk resistivity of this target was 2.1 × 10 ⁻⁴ Ωcm.

(Sputtering target production example 4)
Other than SnO ₂ 10 wt%, SiO ₂ 10 wt%, In ₂ O ₃ 80 wt% (Si is equivalent to about 0.29 mol and Sn is equivalent to about 0.12 mol with respect to In1 mol) Prepared a target in the same manner as in Example 1, and further formed a film in the same manner. The bulk resistivity of this target was 4.0 × 10 ⁻⁴ Ωcm.

(Sputtering target comparative production example 1)
In ₂ O ₃ powder and SnO ₂ powder with a purity> 99.99% were prepared. About 1.5 kg of this powder was prepared in a total amount of SnO ₂ 10 wt% and In ₂ O ₃ 90 wt% (Sn corresponds to about 0.10 mol with respect to 1 mol of In), and was subjected to a filtration molding method. A molded body was obtained. Thereafter, the fired body was fired and sintered at 1550 ° C. for 8 hours in an oxygen atmosphere. This sintered body was processed to obtain a target having a relative density of 99.6% with respect to the theoretical density. The bulk resistivity of this target was 1.4 × 10 ⁻⁴ Ωcm.

(Examples 1-4 and Comparative Example 1)
Since the sputtering targets of Production Examples 1 to 4 are mounted on a 6-inch DC magnetron sputtering apparatus, the substrate temperature is 100 ° C., and the oxygen partial pressure is changed from 0.5 to 0.4 ccm in increments of 0.5 ccm. A contained indium oxide film (ITO-SiO ₂ ) was formed.

The sputtering conditions were as follows, and a film having a thickness of 1200 mm was obtained.
Target dimension: φ = 6 in. t = 6mm
Sputtering method: DC magnetron sputtering Exhaust device: Rotary pump + cryopump Ultimate vacuum: 4.0 × 10 ⁻⁶ [Torr]
Ar pressure: 3.0 × 10 ⁻³ [Torr]
Oxygen pressure: 1-10 × 10 ⁻⁵ [Torr]
Substrate temperature: 200 ° C
Sputtering power: 300 W (Power density 1.6 W / cm ² )
Substrate used: Corning # 1737 (glass for liquid crystal display) t = 0.8 mm

Specific resistance ρ (× 10 ⁻³ Ωcm), carrier density n (× 10 ²⁰ / cm ³ ), and carrier mobility μ [(cm / sec) / (V / cm)] of each transparent conductive film formed Was measured. The results are shown in FIGS.

As a result, the optimum oxygen partial pressure is decreased by adding SiO ₂ , and 12.8 × 10 ⁻³ Pa (2.5 ccm) when SiO ₂ is 1 wt%, 12.8 at 2 wt% and 5 wt%. It was × 10 ⁻³ Pa (3.0 ccm), and it was found that 10 wt% was 15 × 10 ⁻³ Pa (3.5 ccm), which was the same as the additive-free ITO. It was also found that the resistivity of each conductive film increased with the addition of SiO ₂ .

(Test Example 1)
In Comparative Example 1 and Examples 1 to 4, the transparent conductive films produced at the optimum oxygen partial pressure were each cut to a size of 13 mm square, and the samples were annealed for 1 hour in a nitrogen atmosphere and in the air, respectively. The annealing temperatures were 200 ° C., 250 ° C., 300 ° C., 400 ° C., 500 ° C., and 600 ° C., respectively.

Before and after annealing, the specific resistance ρ (× 10 ⁻³ Ωcm), carrier density n (× 10 ¹⁹ / cm ³ ), and carrier mobility μ [(cm / sec) / (V / cm)] were compared. As shown in FIGS. For Example 4, only the specific resistance was measured.

As a result, it was found that in ITO-SiO ₂ , the resistivity starts to increase when heated to a temperature of 250 ° C. or higher regardless of the amount of SiO ₂ added. It was also found that there was a specific resistance maximum value and a carrier density minimum value around 400 ° C. regardless of the amount of SiO ₂ added. Also, the increase in resistivity due to annealing was larger as the amount of SiO ₂ added was larger, and it was found that in Example 4 at 10 wt%, the resistivity increased by three orders of magnitude. When 10 wt% was added, the carrier density and carrier mobility could not be measured due to high resistance.

(Test Example 2)
In Comparative Example 1 and Examples 1 to 4, the transparent conductive films produced at the optimum oxygen partial pressure were each cut into a size of 13 mm square, and the samples were each annealed in the atmosphere for 1 hour. The annealing temperatures were 200 ° C., 250 ° C., 300 ° C., 400 ° C., 500 ° C., and 600 ° C., respectively.

  For each sample, X-ray diffraction (XRD) measurement was performed on the film before annealing and after annealing at each temperature. The results are shown in FIGS.

As a result, when ITO is annealed at 250 ° C., it crystallizes, but when SiO _{2 is} added, the crystallization temperature rises. When 1 wt% is added, it does not crystallize even when annealed at 250 ° C., and 300 wt. It was found that even when annealed at 600 ° C., it was not crystallized even when annealed at 600 ° C. when 5 wt% or more was added.

(Test Example 3)
In Comparative Example 1 and Examples 1 to 4, the transparent conductive films produced at the optimum oxygen partial pressure were cut out to a size of 10 × 50 mm, and the samples were each in a nitrogen atmosphere and in the atmosphere at 300 ° C. for 1 hour. Annealing was performed, and the etching rate was electrically measured before and after annealing. Etching was performed at an etching temperature of 40 ° C. using ITO-05N (oxalic acid system, manufactured by Kanto Chemical Co., Inc.) as an etchant.

The result is shown in FIG. As a result, according to the previous annealing, both after annealing, SiO ₂ adding amount is increased, the etching rate becomes faster, but additive amount of SiO ₂ is the change in etch rate before and after annealing at 2 wt% or more was little, SiO ₂ added When the amount of ITO was 1 wt% and ITO was not added, the film remained after annealing even after 15 minutes, which is 5 times the etching time. Thereby, it was confirmed that the film was crystallized by annealing, which coincided with the XRD measurement result.

(Test Example 4)
In Comparative Example 1 and Examples 1 to 4, the transparent conductive films produced at the optimum oxygen partial pressure were each cut into a size of 13 mm square, and the surface state was observed with an atomic force microscope (AFM). It was recognized that Examples 1-4 which are ITO films containing silicon are smoother than the ITO film of Comparative Example 1 containing no silicon oxide.

(Test Example 5)
In Comparative Example 1 and Examples 1 to 4, the transparent conductive films produced at the optimum oxygen partial pressure were cut into 13 mm square sizes, and the samples were annealed at 300 ° C. for 1 hour in a nitrogen atmosphere and in the air, respectively. The transmittance before and after annealing was measured.

As a result, the ITO of SiO ₂ was not added to crystallize by annealing (Comparative Example 1) and SiO ₂ amount is 1 wt% (Example 1), but increase of the transmittance in the low wavelength region was observed after annealing In the silicon oxide-containing ITO films of Examples 2 to 4, no difference was observed in the transmittance before and after annealing.

Specific Resistance ρ (× 10 ⁻³ Ωcm), Carrier Density n (× 10 ²⁰ / cm ³ ), and Carrier Mobility μ [(cm / sec) / (V / cm)] Results of the Transparent Conductive Film of Example 1 FIG. Specific Resistance ρ (× 10 ⁻³ Ωcm), Carrier Density n (× 10 ²⁰ / cm ³ ), and Carrier Mobility μ [(cm / sec) / (V / cm)] Results of the Transparent Conductive Film of Example 2 FIG. Specific Resistance ρ (× 10 ⁻³ Ωcm), Carrier Density n (× 10 ²⁰ / cm ³ ), and Carrier Mobility μ [(cm / sec) / (V / cm)] Result of the Transparent Conductive Film of Example 3 FIG. Specific Resistance ρ (× 10 ⁻³ Ωcm), Carrier Density n (× 10 ²⁰ / cm ³ ), and Carrier Mobility μ [(cm / sec) / (V / cm)] Result of the Transparent Conductive Film of Example 4 FIG. Specific Resistance ρ (× 10 ⁻³ Ωcm), Carrier Density n (× 10 ²⁰ / cm ³ ), and Carrier Mobility μ [(cm / sec) / (V / cm)] Result of Comparative Example 1 FIG. Before and after annealing of the transparent conductive film of Example 1, specific resistance ρ (× 10 ⁻³ Ωcm), carrier density n (× 10 ¹⁹ / cm ³ ), and carrier mobility μ [(cm / sec) / (V / cm)]]. Before and after annealing of the transparent conductive film of Example 2, specific resistance ρ (× 10 ⁻³ Ωcm), carrier density n (× 10 ¹⁹ / cm ³ ), and carrier mobility μ [(cm / sec) / (V / cm)]]. Before and after annealing the transparent conductive film of Example 3, the specific resistance ρ (× 10 ⁻³ Ωcm), the carrier density n (× 10 ¹⁹ / cm ³ ), and the carrier mobility μ [(cm / sec) / (V / cm)]]. Before and after annealing of the transparent conductive film of Example 4, the specific resistance ρ (× 10 ⁻³ Ωcm), the carrier density n (× 10 ¹⁹ / cm ³ ), and the carrier mobility μ [(cm / sec) / (V / cm)]]. Before and after annealing of the transparent conductive film of Comparative Example 1, specific resistance ρ (× 10 ⁻³ Ωcm), carrier density n (× 10 ¹⁹ / cm ³ ), and carrier mobility μ [(cm / sec) / (V / cm)]]. It is a figure which shows the result of having measured the X-ray diffraction (XRD) about the film | membrane before annealing of the transparent conductive film of Example 1, and the film | membrane after annealing of each temperature. It is a figure which shows the result of having measured the X-ray diffraction (XRD) about the film | membrane before annealing of the transparent conductive film of Example 2, and the film | membrane after annealing of each temperature. It is a figure which shows the result of having measured the X-ray diffraction (XRD) about the film | membrane before annealing of the transparent conductive film of Example 3, and the film | membrane after annealing of each temperature. It is a figure which shows the result of having measured the X-ray diffraction (XRD) about the film | membrane before annealing of the transparent conductive film of Example 4, and the film | membrane after annealing of each temperature. It is a figure which shows the result of having measured the X ray diffraction (XRD) about the film | membrane before annealing of the transparent conductive film of the comparative example 1, and the film | membrane after annealing of each temperature. It is a figure which shows the result of Test Example 3.

Claims (14)

An indium oxide-based transparent conductive film formed using an indium oxide-based sputtering target, characterized in that it contains indium oxide and, if necessary, tin oxide and silicon oxide, and is not crystallized. Indium oxide based transparent conductive film. 2. The indium oxide-based transparent conductive film according to claim 1, wherein the indium oxide-based transparent conductive film is formed under a temperature condition not lower than room temperature and lower than 250 ° C. 3. The indium oxide-based transparent conductive film according to claim 1, wherein the indium oxide-based transparent conductive film is not subjected to a heat treatment at a temperature of 250 ° C. or higher after film formation. 3. The indium oxide-based transparent conductive film according to claim 1, wherein the indium oxide-based transparent conductive film is not subjected to a heat treatment at a temperature higher than a crystallization temperature after film formation. 5. The indium oxide-based transparent conductive film according to claim 1, wherein 0.00001 to 0.35 mol of silicon is contained with respect to 1 mol of indium. 6. The indium oxide-based transparent conductive film according to claim 1, wherein tin (Sn) is contained in an amount of 0 to 0.3 mol with respect to 1 mol of indium. A transparent conductive film is formed by forming a film at room temperature or higher and lower than 250 ° C. using an indium oxide-based sputtering target containing indium oxide and, if necessary, tin oxide and containing silicon oxide. A method for producing an indium oxide-based transparent conductive film. 8. The method for producing an indium oxide-based transparent conductive film according to claim 7, wherein the transparent conductive film is not crystallized after being subjected to a heat treatment at a temperature of 250 ° C. or higher. 8. The method for producing an indium oxide-based transparent conductive film according to claim 7, wherein the transparent conductive film is not crystallized after being subjected to a heat treatment at a temperature equal to or higher than a crystallization temperature. 10. The method for producing an indium oxide-based transparent conductive film according to claim 7, wherein the transparent conductive film is crystallized after being patterned and heat-treated at a temperature equal to or higher than a crystallization temperature. . 11. The method for producing an indium oxide-based transparent conductive film according to claim 7, wherein the transparent conductive film is crystallized by heat treatment at a temperature equal to or higher than a crystallization temperature after film formation. The method for producing an indium oxide-based transparent conductive film according to claim 7, wherein the transparent conductive film is formed by DC magnetron sputtering. The method for producing an indium oxide-based transparent conductive film according to claim 7, wherein silicon is contained in an amount of 0.00001 to 0.35 mol with respect to 1 mol of indium. The method for producing an indium oxide-based transparent conductive film according to claim 7, wherein tin (Sn) is contained in an amount of 0 to 0.3 mol with respect to 1 mol of indium.

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