TWI710650B - Spattering target for transparent conductive film - Google Patents

Abstract

The spattering target for transparent conductive film of the present invention comprising an oxide sintered body, the constituent elements of the oxide sintered body are In, Sn, Si and O, or In, Si and O, the content ratio of In is 70.0 mass% or more and 85.0 mass% or less in terms of In₂O₃, the content ratio of Sn is 0 mass% or more and 10.0 mass% or less in terms of SnO₂, the content ratio of Si is 15.0 mass% or more and 20.0 mass% or less in terms of SiO₂; wherein, in the X-ray diffraction measurement of the spattering target, all of Si appears as a peak of an indium silicate compound having a tilt-by-tight type structure. The spattering target for forming conductive film of the present invention has low resistivity, can perform DC spattering, and generates less nodules and arcing. Further, by spattering, a transparent conductive film having high film resistivity and high etching processability can be formed.

Description

Sputtering target for transparent conductive film

The present invention relates to a sputtering target for a transparent conductive film. More specifically, it relates to a sputtering target for a transparent conductive film that can perform DC sputtering and can form a transparent conductive film with high etching processability.

In the transparent conductive film used in the in-cell capacitive touch panel, in order to prevent low-frequency noise from hindering the operation of the display, high resistance and high transmittance are required. Because when the conductive film is low resistance, the high frequency signal used for touch sensing will be completely blocked.

The conductive film is usually formed by sputtering a sputtering target.

High-transmittance materials mainly use ITO, but because of its low resistance, ITO cannot be used as a conductive film for in-cell capacitive touch panels.

The technology for obtaining high-resistance materials is to add insulating oxide to ITO. However, when insulating oxide is added to ITO, the etching processability becomes lower. In the application of etching conductive film, etc. It will become difficult to use.

For example, Patent Document 1 discloses a of ITO as a main raw material, containing from 7.2 to 11.2 atom% of silicon, and the specific resistance of the transparent conductive film 10 ^° to the 10 ³ Ωcm. Patent Document 2 discloses a transparent conductive film having a resistivity of 0.8 to 10×10 ^-3 Ωcm obtained by sputtering a transparent conductive film composed of indium oxide, tin oxide, and silicon oxide with a sputtering target. However, the etching processability of any conductive film is low.

In addition, many high-resistance films have been proposed, but the resistance of the target used in the film formation of the film will also increase. When the resistance of the target is high, DC power supply cannot be used for sputtering, and a high-resistance film must be made with RF power supply, so productivity is poor.

[Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 5855948

[Patent Document 2] Japanese Patent No. 4424889

The object of the present invention is to provide a sputtering target that can perform DC sputtering, produces less protrusions or arcs, and can form a transparent conductive film with high specific resistance and high etching processability.

The sputtering target for a transparent conductive film of the present invention includes an oxide sintered body, the constituent elements of the oxide sintered body are In, Sn, Si, and O, or In, Si, and O, and the content of In is based on In ₂ O _{3 When} converted to 70.0% by mass and less than 85.0% by mass, the content of Sn is 0% to 10.0% by mass in terms of SnO ₂ and the content of Si is more than 15.0% by mass and less than 2.0% by mass in terms of SiO ₂ ; Among them, in the X-ray diffraction measurement of the aforementioned sputtering target, all Si is shown as a spectrum peak of an indium silicate compound with a thortveitite type structure.

The aforementioned sputtering target for a transparent conductive film preferably has a specific resistance of 2.0×10 ² Ωcm or less.

The aforementioned sputtering target for transparent conductive film preferably has a relative density of 98.0% or more.

The constituent elements of the transparent conductive film of the present invention are In, Sn, Si, and O, or In, Si, and O, and the content of In is 73.0% by mass or more and 87.0% by mass in terms of In ₂ O ₃ , and the content of Sn It is 0 mass% or more and 9.0 mass% or less in terms of SnO ₂ and the content of Si is 13.0 mass% or more and 18.0 mass% or less in terms of SiO ₂ .

The above-mentioned transparent conductive film preferably has a specific resistance of 1.0×10 ⁰ Ωcm or more, and preferably an etching rate of more than 11.0 Å/sec.

The manufacturing method of the transparent conductive film of this invention forms a film by sputtering the said sputtering target for transparent conductive films.

In the manufacturing method of the transparent conductive film, it is preferable that the film specific resistance of the transparent conductive film is 1.0×10 ⁰ Ωcm or more, and it is preferable that the etching rate of the transparent conductive film exceeds 11.0 Å/sec.

The sputtering target for forming a conductive film of the present invention has a low specific resistance, can be used for DC sputtering, and produces less protrusions or arcs. In addition, by sputtering, a transparent conductive film with high film specific resistance and high etching processability can be formed. The manufacturing method of the transparent conductive film of the present invention can manufacture a transparent conductive film having high specific resistance and high etching processability.

Figure 1 shows the X-ray diffraction pattern of the sputtering target obtained in Example 3.

The sputtering target for a transparent conductive film of the present invention includes an oxide sintered body, the constituent elements of the oxide sintered body are In, Sn, Si, and O, or In, Si, and O, and the content of In is based on In ₂ O _{3 When} converted to 70.0% by mass or more and less than 85.0% by mass, the content of Sn is 0% to 10.0% by mass in terms of SnO ₂ and the content of Si is more than 15.0% by mass and less than 20.0% by mass in terms of SiO ₂ . Of course, a target containing an oxide sintered body like the sputtering target for a transparent conductive film of the present invention contains inevitable impurities derived from raw materials, and it is also included in the sputtering target for a transparent conductive film of the present invention It also contains unavoidable impurities. The content of inevitable impurities in the sputtering target for transparent conductive film of the present invention is usually 100 ppm or less.

Furthermore, in the present invention, the so-called constituent elements refer to constituent elements other than inevitable impurities in the sputtering target or transparent conductive film, and the content ratio of each constituent element means that the sputtering target or transparent conductive film as a whole The content ratio of each constituent element in.

The sputtering target for a transparent conductive film of the present invention is characterized by having a low Sn content or not containing Sn, and containing a relatively high concentration of Si compared to the usual ITO sputtering target.

The constituent elements of the aforementioned oxide sintered body are In, Sn, Si, and O, or In, Sn, and O. In the aforementioned oxide sintered body, the content of In is 70.0% by mass or more and less than 85.0% by mass in terms of In ₂ O ₃ , preferably 73.0% by mass or more and 84.0% by mass or less, more preferably 76.0% by mass or more and 84.0 Mass% or less, Sn content is 0 mass% or more and 10.0 mass% or less in terms of SnO ₂ , preferably 0 mass% or more and 7.0 mass% or less, more preferably 0 mass% or more and 5.0 mass% or less, Si content ratio-based terms of SiO ₂ exceeds 15.0 mass% and 20.0 mass% or less, more preferably 16.0 mass% based 20.0 mass% or less, more preferably 16.0 mass% or more based 19.0 mass% or less. In addition, the composition of the sputtering target for the transparent conductive film is the same as the composition of the oxide sintered body.

The sputtering target for a transparent conductive film containing an oxide sintered body having the aforementioned composition has a low specific resistance, so that DC sputtering is possible. The specific resistance of the aforementioned sputtering target for a transparent conductive film is preferably 2.0×10 ² Ωcm or less, more preferably 1.5×10 ² Ωcm or less, and still more preferably 1.0×10 ² Ωcm or less. Generally, when the specific resistance of the target is about 10 ² Ωcm or less, DC sputtering can be performed.

The sputtering target system for a transparent conductive film containing an oxide sintered body having the aforementioned composition can be sputtered to form a transparent conductive film with a high film specific resistance. Therefore, when the transparent conductive film obtained from the aforementioned sputtering target for transparent conductive film is used in an in-cell capacitive touch panel, it can prevent the operation of the display from being hindered by low-frequency noise. When the aforementioned sputtering target for a transparent conductive film is used, a transparent conductive film having a film specific resistance of 1.0×10 ⁰ Ωcm or more can be obtained. The film specific resistance of the aforementioned transparent conductive film is preferably 1.1×10 ⁰ Ωcm or more, more preferably 1.2×10 ⁰ Ωcm or more. The upper limit of the film specific resistance of the aforementioned transparent conductive film is not specifically defined, but it is usually 5.0×10 ⁵ Ωcm.

The sputtering target system for a transparent conductive film containing the oxide sintered body which has the said composition can form the transparent conductive film with high etching processability by sputtering. The high etching processability system can evaluate whether the etching rate is fast or not. The transparent conductive film obtained from the aforementioned sputtering target for transparent conductive film preferably has an etching rate of more than 11.0 Å/sec, more preferably 11.3 Å/sec or more, still more preferably 15.0 Å/sec or more, and still more preferably 20.0Å/sec or more. The etching rate of the transparent conductive film is in a transparent conductive film etching solution (ITO-07N manufactured by Kanto Chemical Co., Ltd.) heated to 40°C. A part of the transparent conductive film is immersed for 6 minutes to perform etching. Calculate the difference in film thickness (step difference) and etching time between the place and the unimplemented place.

The film specific resistance of the transparent conductive film obtained by sputtering a transparent conductive film containing a sintered body of oxides containing In, Sn and Si with a sputtering target will increase with the content of Sn and Si in the target Become higher. However, the etching processability of the transparent conductive film cannot be increased when the Si content is large. Therefore, in order to obtain sufficient etching processability of the transparent conductive film, the Sn content of the target must be 0% by mass or more and 10.0% by mass or less in terms of SnO ₂ . When the Sn content of the aforementioned target is 0% by mass or more and 10.0% by mass or less in terms of SnO ₂ , the specific resistance of the film becomes lower. Therefore, in order to obtain a high specific resistance of the film, the Si content of the corresponding component must be increased. Therefore, the Si content must exceed 15.0% by mass in terms of SiO ₂ . On the other hand, in order to obtain a high specific resistance of the film, it is sufficient if the Si content is 20% by mass in terms of SiO ₂ and does not need to be more than this. That is, the sputtering target for a transparent conductive film of the present invention can be combined with "Sn content of 0 mass% to 10.0 mass% in terms of SnO ₂ " and "Sn content of more than 15.0 mass% and 20.0 mass% in terms of SiO ₂ % Or less Si content" is used for DC sputtering, and through the combination thereof, the high specific resistance and high etching processability of the transparent conductive film after film formation can be achieved.

The relative density of the aforementioned sputtering target for transparent conductive film is preferably 98.0% or more, more preferably 98.5% or more, and even more preferably 99.0% or more. When the relative density is above 98.0%, there will be less protrusions or arcs, and efficient sputtering can be carried out. The upper limit of the relative density is not particularly limited, and can exceed 100%. The aforementioned relative density is a value determined by Archimedes' method.

The aforementioned sputtering target for transparent conductive film is preferably used in X-ray diffraction measurement, and all Si is displayed as the peak of an indium silicate compound having a scandium yttrium structure. That is, the target contains an indium silicate compound having a scandium yttrium type structure, and when performing X-ray diffraction measurement on the target, it is preferable that all Si is a silicic acid having a scandium type structure The spectrum peaks of the indium compound are shown, and not the spectrum peaks of Si compounds other than the indium silicate compound having a scandium structure. Examples of the indium silicate compound having a scandium yttrium type structure include compounds represented by In ₂ Si ₂ O ₇ . Examples of Si compound systems other than the indium silicate compound having a scandium yttrium type structure include SiO ₂ . When the aforementioned sputtering target for a transparent conductive film satisfies this condition, there is no partial segregation of the insulator, so the generation of arcs or protrusions is reduced.

In addition, the sputtering target for a transparent conductive film includes an indium silicate compound phase having a scandium yttrium structure, as well as, for example, In ₂ O ₃ phase, In ₄ Sn ₃ O _{12, etc.}

The aforementioned sputtering target system for a transparent conductive film can be manufactured by, for example, the following method.

First, the raw material powders are mixed. The raw material powder is usually In ₂ O ₃ powder, SnO ₂ powder, and SiO ₂ powder. In ₂ O ₃ powder, SnO ₂ powder, and SiO ₂ powder are mixed so that the contents of In, Sn, and Si in the obtained sintered body fall within the aforementioned ranges. In addition, it was confirmed that the content ratios of In ₂ O ₃ powder, SnO ₂ powder, and SiO ₂ powder in the mixed powder obtained by mixing the raw material powders are the In content converted from In ₂ O ₃ in the aforementioned oxide sintered body, respectively The ratio, the Sn content ratio in SnO ₂ conversion, and the Si content ratio in SiO ₂ conversion are consistent.

Since the particles of each raw material powder are usually aggregated, it is preferable to pulverize and mix in advance, or to pulverize while mixing.

The method of pulverizing and mixing the raw material powder is not particularly limited. For example, the raw material powder can be placed in a mortar and pulverized or mixed by a ball mill.

The obtained mixed powder can also be directly formed into a compact and sintered thereon, but a binder can be added to the mixed powder to form a compact if necessary. The binder can be the binder used in the well-known powder metallurgy method to obtain the molded body, such as polyvinyl alcohol and acrylic emulsion binder. In addition, a dispersant may be added to the mixed powder to prepare a slurry, the slurry may be sprayed and dried to produce particles, and then the particles may be shaped.

The forming method can use the method used in the past powder metallurgy method, such as cold pressing, CIP (cold isostatic pressing) and so on.

In addition, the mixed powder may be temporarily pre-pressurized to produce a preform, and then the pulverized powder obtained by pulverization may be subjected to full pressure to produce a molded body.

In addition, a wet molding method such as a slit casting method may be used to produce a molded body.

The relative density of the formed body is usually 50 to 75%.

A sintered body can be obtained by firing the obtained molded body. The firing furnace used for firing is not particularly limited as long as the cooling rate can be controlled during cooling, and it may also be a firing furnace generally used in powder metallurgy. The firing environment is suitable for an oxygen-containing environment.

From the viewpoint of increasing the density and preventing cracking, the temperature increase rate is usually 100 to 500°C/h. The firing temperature is 1300 to 1600°C, preferably 1400 to 1600°C. When the firing temperature is within the aforementioned range, a high-density sintered body can be obtained. The holding time at the aforementioned firing temperature is usually 3 to 30 hours, preferably 5 to 20 hours. When the holding time is within the aforementioned range, it is easy to obtain a high-density sintered body.

After the above-mentioned temperature maintenance is completed, the temperature in the sintering furnace is generally lowered to be 300°C/hr or less, preferably 100°C/hr or less, and then cooled.

The sintered body obtained in this way is cut into a desired shape as required and polished, etc., thereby obtaining the aforementioned sputtering target for transparent conductive film.

The shape of the sputtering target for the transparent conductive film is flat, cylindrical, etc., and is not particularly limited.

The aforementioned sputtering target for a transparent conductive film is usually used for bonding to a substrate. The substrate is usually made of Cu, Al, Ti or stainless steel. The bonding material can be the bonding material used in the bonding of conventional ITO target materials, such as In metal. The bonding method is also the same as the bonding method of the conventional ITO target.

By sputtering the aforementioned transparent conductive film sputtering target, a transparent conductive film can be formed. As described above, since the aforementioned sputtering target for a transparent conductive film has a low specific resistance, not only RF sputtering but also DC sputtering can be performed.

By sputtering the aforementioned sputtering target for a transparent conductive film, a transparent conductive film having In, Sn, Si, and O, or In, Si, and O as constituent elements can be obtained. The Sn content ratio and the Si content ratio of the obtained transparent conductive film tend to be lower than the Sn content ratio and the Si content ratio of the aforementioned sputtering target for transparent conductive film. Therefore, in the aforementioned transparent conductive film, the content of In is 73.0% by mass or more and 87.0% by mass in terms of In ₂ O ₃ , preferably 74.0% by mass or more and 87.0% by mass or less, and the content of Sn is 0 in terms of SnO ₂ Mass% or more and 9.0 mass% or less, preferably 0 mass% or more and 8.0 mass% or less, and the Si content ratio in terms of SiO ₂ is 13.0 mass% or more and 18.0 mass% or less, preferably 13.0 mass% or more and 16.0 mass% or less. The obtained transparent conductive film is as described above, and has high film specific resistance and etching processability. Also, as in the case of the sputtering target for the transparent conductive film, the transparent conductive film may also contain unavoidable impurities. The content of unavoidable impurities in the aforementioned transparent conductive film is usually 100 ppm or less.

[Example]

The measurement methods used in the following Examples and Comparative Examples are shown below.

1. The relative density of the target

The relative density of the sputtering target for transparent conductive film is measured according to the Archimedes method. Specifically, the air mass of the target is divided by the volume (the water mass of the target/the specific gravity of the water in the measured temperature), as a percentage relative to the theoretical density ρ(g/cm ³ ) according to the following formula (X) The value is regarded as the relative density (unit: %).

ρ=((C1/100)/ρ1+(C2/100)/ρ2+‧‧‧+(Ci/100)/ρi) ^-1 (X) (where C1 to Ci respectively represent the content of the constituent substances of the target (Mass%), ρ1 to ρi represent the density (g/cm ³ ) of each constituent material corresponding to C1 to Ci.)

Since the materials (raw materials) used in the manufacture of the target in the following examples and comparative examples are In ₂ O ₃ , SnO ₂ , and SiO ₂ , the theoretical density can be calculated by applying the following to formula (X), for example ρ .

C1: Mass% of In ₂ O ₃ raw material used in the target

ρ1: Density of In ₂ O ₃ (7.18g/cm ³ )

C2: The mass% of SnO ₂ raw material used in the target

ρ2: Density of SnO ₂ (6.95g/cm ³ )

C3: Mass% of SiO ₂ raw material used in the target

ρ3: Density of SiO ₂ (2.20g/cm ³ )

2. Specific resistance of target

The specific resistance of the sputtering target was measured in the AUTO RANGE mode using Loresta (registered trademark) HP MCP-T410 (series 4 probe TYPE ESP) manufactured by Mitsubishi Chemical Corporation, the probe was pressed against the surface of the processed sintered body.

3. The existence of Si in the sputtering target

The existence state of Si in the sputtering target was measured under the following conditions using an X-ray diffraction device SmartLab (registered trademark) manufactured by Rigaku Corporation.

‧Line source: CuKα line

‧Tube voltage: 40kV

‧Tube current: 30mA

‧Scan speed: 5deg/min

‧Step: 0.02deg

‧Scan range: 2θ=20 degrees to 80 degrees

4. Film specific resistance of transparent conductive film

The film specific resistance of the transparent conductive film was measured using a four-pointer K-705RS manufactured by Kyowa Riken Co., Ltd.

5. Etching rate of transparent conductive film

The etching rate of the transparent conductive film was etched by immersing a part of the transparent conductive film in a transparent conductive film etching solution (ITO-07N manufactured by Kanto Chemical Co., Ltd.) heated to 40°C for 6 minutes, and using KLA- The stylus-type surface profile measuring instrument P-15 manufactured by Tencor Corporation measured the height difference between the etching place and the unetched place, and calculated by dividing the height difference by the etching time.

6. The content ratio of In, Sn and Si in the transparent conductive film

The measurement uses a transparent conductive film formed on a copper foil. The content ratio of In and Sn was measured by the acid decomposition ICP-OES method using the ICP emission spectrophotometer 720 ICP-OES manufactured by Agilent Technologies, and the content ratio of Si was measured by Hitachi U-2900 spectrophotometer manufactured by Hitachi Ltd. Molybdenum blue absorptiometry (molybdenum blue absorptiometry) is used for the determination.

[Examples and Comparative Examples]

(Manufacturing of Sputtering Target)

The In ₂ O ₃ powder, SnO ₂ powder, and SiO ₂ powder were mixed at the ratio shown in Table 1 using a ball mill to prepare mixed powder.

To the aforementioned mixed powder, add 6% by mass of polyvinyl alcohol diluted to 4% by mass relative to the mixed powder, use a mortar to fully impregnate the powder with polyvinyl alcohol, and pass through a 5.5-mesh sieve. The obtained powder was pre-pressurized under the condition of 200 kg/cm ² , and then the obtained preform was crushed in a mortar. The obtained pulverized material was filled in a press mold, and molded at a press pressure of 1 t/cm ² for 60 seconds to obtain a molded body.

Place the obtained molded body in a sintering furnace, flow oxygen in the furnace at 1L/h, set the sintering environment as an oxygen flow environment, set the heating rate to 350°C/h, and the sintering temperature to 1550°C. Firing is carried out in a way that the holding time of the making temperature is 9h. After that, it was cooled at a temperature drop rate of 100°C/h. In addition, in Comparative Example 7, the firing temperature was set to 1250°C.

In the above manner, an oxide sintered body is obtained.

This oxide sintered body was cut to produce a sputtering target. The relative density and specific resistance of the sputtering target and the existence state of Si in the sputtering target were measured by the above methods. The results are shown in Table 1.

In the "Presence of Si" in Table 1, the notation of "In ₂ Si ₂ O ₇ "means that in the X-ray diffraction measurement, all Si in the sputtering target is based on the peak of In ₂ Si ₂ O ₇ In the display, the notation of "SiO ₂ +In ₂ Si ₂ O ₇ "means that all Si in the sputtering target is displayed with the spectrum peaks of SiO ₂ and In ₂ Si ₂ O ₇ .

In addition, the X-ray diffraction pattern of the sputtering target obtained in Example 3 is shown in Figure 1. In Figure 1, the black circles represent the peaks of In ₂ O ₃ and the black triangles represent the peaks of In ₂ Si ₂ O ₇ . It can be confirmed from Figure 1 that all Si in the sputtering target obtained in Example 3 is present as Si in In ₂ Si ₂ O ₇ which is an indium silicate compound having a scandium-type structure.

(Manufacture of transparent conductive film)

The aforementioned sputtering target was joined to a copper support plate with In solder, and sputtering was performed under the following conditions to form a transparent conductive film with a film thickness of 1000 Å on a glass substrate for measurement of specific resistance and etching rate. A transparent conductive film of 15000Å is formed on a copper foil with a thickness of 1.1mm to measure the Sn content and Si content of the transparent conductive film. In addition, in Comparative Example 6, the specific resistance of the target was high and no discharge occurred, so DC sputtering could not be performed. In addition, the target system of Comparative Example 7 often generated arcs and protrusions, and could not form a stable film. Therefore, film formation evaluation cannot be performed either.

Device: DC magnetron spattering device (magnetron spattering device), exhaust system refrigeration pump, rotary pump

Reaching vacuum degree: 1×10 ^-4 Pa

Sputtering pressure: 0.4Pa

Oxygen flow rate: 0 to 3.0sccm

The film specific resistance, etching rate, In content ratio, Sn content ratio, and Si content ratio of the obtained transparent conductive film were measured by the above-mentioned method. The conditions of the oxygen flow rate are suitably adjusted to obtain an amorphous transparent conductive film and the specific resistance of the film is the lowest. The results are shown in Table 1.

The drawings in this case only show the X-ray diffraction pattern of the sputtering target, and are not sufficient to represent the technical features of the invention claimed in the scope of the patent application in this case. Therefore, there is no designated representative diagram in this case.

Claims (8)

A sputtering target for a transparent conductive film contains an oxide sintered body. The constituent elements of the oxide sintered body are In, Sn, Si, and O, or In, Si, and O, and the content of In is based on In ₂ O ₃ Converted to 70.0% by mass or more and less than 85.0% by mass, the content of Sn is 0% to 10.0% by mass in terms of SnO ₂ and the content of Si is more than 15.0% by mass and less than 20.0% by mass in terms of SiO ₂ ; Among them, in the X-ray diffraction measurement of the aforementioned sputtering target, all Si is displayed as the spectrum peak of an indium silicate compound having a scandium yttrium structure. The sputtering target for a transparent conductive film as described in item 1 of the scope of the patent application has a specific resistance of 2.0×10 ² Ωcm or less. The sputtering target for transparent conductive film as described in item 1 or 2 of the scope of patent application has a relative density of 98.0% or more. A transparent conductive film whose constituent elements are In, Sn, Si, and O, or In, Si, and O, and the content of In is 73.0% by mass or more and 87.0% by mass in terms of In ₂ O ₃ , and the content of Sn is SnO ₂ is 0 mass% or more and 9.0 mass% or less, the Si content is 13.0 mass% or more and 18.0 mass% or less in SiO ₂ conversion, and the film specific resistance is 1.0×10 ⁰ Ωcm or more and 5.0×10 ⁵ Ωcm or less. For the transparent conductive film described in item 4 of the scope of patent application, the etching rate calculated from the etching performed by the transparent conductive film etching solution (ITO-07N manufactured by Kanto Chemical Co., Ltd.) heated to 40°C exceeds 11.0 Å/sec. A manufacturing method of transparent conductive film is applied for patent by sputtering A film is formed around the sputtering target for a transparent conductive film described in any one of items 1 to 3. The method for manufacturing a transparent conductive film as described in item 6 of the scope of patent application, wherein the film specific resistance of the transparent conductive film is 1.0×10 ⁰ Ωcm or more and 5.0×10 ⁵ Ωcm or less. The method for manufacturing a transparent conductive film as described in item 6 or 7 of the scope of patent application, wherein the transparent conductive film is heated to 40°C with a transparent conductive film etching solution (ITO-07N manufactured by Kanto Chemical Co., Ltd.) The calculated etching rate of the etching is more than 11.0Å/sec.

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