JP5225862B2 - 高圧ガスアニーリング装置及び方法 - Google Patents
高圧ガスアニーリング装置及び方法 Download PDFInfo
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- JP5225862B2 JP5225862B2 JP2008554126A JP2008554126A JP5225862B2 JP 5225862 B2 JP5225862 B2 JP 5225862B2 JP 2008554126 A JP2008554126 A JP 2008554126A JP 2008554126 A JP2008554126 A JP 2008554126A JP 5225862 B2 JP5225862 B2 JP 5225862B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
Claims (7)
- 半導体製造のために加圧・加熱下に半導体ウェハー又は半導体デバイスのアニーリングを行う装置であって、
非金属材料製の内側容器の内部空間として、アニーリング処理ガスとしての第1のガスが閉じ込められて第1のガス圧力を維持するように設計された内側チャンバーと、
金属材料製の外側容器と前記内側容器との間に構成され、内側チャンバーを包み込むとともに、第2のガスが閉じ込められて第2のガス圧力を維持するように設計された外側チャンバーと、
アニーリング処理の終了後に、内側チャンバーから第1のガスを排出するために、前記内側容器の一部から延びて、外側チャンバー内の空間及び前記外側容器を貫く第1の排気路(29,147)と、
アニーリング処理の終了後に、外側チャンバーから第2のガスを排出するために、第1の排気路(29,147)が貫く箇所に近接した箇所にて、前記外側容器を貫いて延びる第2の排気路(35,135)と、
一方の端部が、前記外側容器の外面の近傍にて、第1の排気路(29,147)及び第2の排気路(35,135)のいずれにも接続する第1の排気放出管(44,157)とからなる高圧ガスアニーリング装置。 - 第1の排気路(29,147)及び第2の排気路(35,135)と、第1の排気放出管(44,157)との接続箇所に配置され、開いた際に、前記の第1のガス圧力及び第2のガス圧力を同時に解除する圧力コントロールバルブ(41,137)と、
圧力コントロールバルブ(41,137)の直後の箇所で、第1の排気放出管(42,157)に接続する窒素注入ライン(56,161)と
をさらに含むことを特徴とする請求項1に記載の高圧ガスアニーリング装置。 - 第1の排気放出管(42,157)の他方の端部に接続される希釈タンク(43,151)と、
第2の排気放出管(44,158)を介して希釈タンク(43,151)に接続された燃焼スクラバー(45,152)と、
燃焼スクラバー(45,152)に接続し、燃焼後の混合ガスを装置の外側に流す第3の排気放出管(53,159)とをさらに含むことを特徴とする請求項1または2に記載の高圧ガスアニーリング装置。 - 請求項1〜3のいずれかに記載の高圧ガスアニーリング装置を用いて、半導体製造のために加圧・加熱下に半導体ウェハー又は半導体デバイスのアニーリングを行う方法であって、
内側チャンバー内に閉じ込められた第1のガスを第1の圧力にて保持し、外側チャンバー内に閉じ込められた第2のガスを第2の圧力にて保持し、
チャンバー内へとガスを加えること、及び、圧力コントロールバルブ(41,137)を用いてチャンバーからの排気を行うことの少なくとも一方によって、内側チャンバー内の第1のガスの量、及び、外側チャンバー内の第2のガスの量のうちの少なくとも一方を調整または変更するにあたり、第1の圧力と第2の圧力との圧力差が2気圧以下、または、その他の所定範囲内になるようにし、
アニーリング処理が完了した際に、圧力コントロールバルブ(41,137)を用いて第1のガス及び第2のガスを第1の排気放出管(42,157)中へと排出するとともに、この中で混合させることを特徴とする高圧ガスアニーリング方法。 - 前記第1のガスが、水素、重水素、フッ素、塩素、及びアンモニアのうちの少なくとも一つであり、前記第2のガスが窒素その他の不活性ガスであることを特徴とする請求項4の高圧ガスアニーリング方法。
- 前記第1のガスが、1〜99%の重水素を含むフォーミング・ガスであり、前記第1の圧力が25気圧を超えることを特徴とする請求項4または5に記載の高圧ガスアニーリング方法。
- 圧力差が設定範囲外であるならば、警報を出すか、装置をシャットダウンするか、またはその他の緊急手段を講じることを特徴とする請求項4〜6のいずれかに記載の高圧ガスアニーリング方法。
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US11/351,816 | 2006-02-10 | ||
US11/351,816 US20070187386A1 (en) | 2006-02-10 | 2006-02-10 | Methods and apparatuses for high pressure gas annealing |
PCT/KR2007/000232 WO2007091784A1 (en) | 2006-02-10 | 2007-01-12 | Methods and apparatuses for high pressure gas annealing |
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2006
- 2006-02-10 US US11/351,816 patent/US20070187386A1/en not_active Abandoned
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2007
- 2007-01-12 WO PCT/KR2007/000232 patent/WO2007091784A1/en active Application Filing
- 2007-01-12 CN CNA2007800050808A patent/CN101385131A/zh active Pending
- 2007-01-12 JP JP2008554126A patent/JP5225862B2/ja active Active
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2009
- 2009-02-04 US US12/322,665 patent/US8481123B2/en active Active
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2013
- 2013-07-03 US US13/935,434 patent/US8936834B2/en active Active
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US8481123B2 (en) | 2013-07-09 |
US20130302916A1 (en) | 2013-11-14 |
US20070187386A1 (en) | 2007-08-16 |
US8936834B2 (en) | 2015-01-20 |
US20090148965A1 (en) | 2009-06-11 |
WO2007091784A1 (en) | 2007-08-16 |
JP2009539231A (ja) | 2009-11-12 |
CN101385131A (zh) | 2009-03-11 |
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