JP5222509B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5222509B2
JP5222509B2 JP2007236594A JP2007236594A JP5222509B2 JP 5222509 B2 JP5222509 B2 JP 5222509B2 JP 2007236594 A JP2007236594 A JP 2007236594A JP 2007236594 A JP2007236594 A JP 2007236594A JP 5222509 B2 JP5222509 B2 JP 5222509B2
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Japan
Prior art keywords
conductive pads
wiring board
wiring
chip
semiconductor device
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JP2007236594A
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English (en)
Japanese (ja)
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JP2009070965A5 (enExample
JP2009070965A (ja
Inventor
智和 石川
三香子 岡田
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2007236594A priority Critical patent/JP5222509B2/ja
Priority to TW104106919A priority patent/TWI529908B/zh
Priority to TW097123751A priority patent/TWI481007B/zh
Priority to CN201210331265.0A priority patent/CN102867821B/zh
Priority to CNA2008102109164A priority patent/CN101388389A/zh
Priority to KR1020080082975A priority patent/KR101426568B1/ko
Priority to US12/203,972 priority patent/US8159058B2/en
Publication of JP2009070965A publication Critical patent/JP2009070965A/ja
Publication of JP2009070965A5 publication Critical patent/JP2009070965A5/ja
Priority to US13/409,865 priority patent/US8698299B2/en
Application granted granted Critical
Publication of JP5222509B2 publication Critical patent/JP5222509B2/ja
Priority to US14/081,588 priority patent/US8766425B2/en
Priority to US14/281,956 priority patent/US9330942B2/en
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    • H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

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  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
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TW104106919A TWI529908B (zh) 2007-09-12 2008-06-25 半導體裝置
TW097123751A TWI481007B (zh) 2007-09-12 2008-06-25 Semiconductor device
CN201210331265.0A CN102867821B (zh) 2007-09-12 2008-08-12 半导体器件
CNA2008102109164A CN101388389A (zh) 2007-09-12 2008-08-12 半导体器件
KR1020080082975A KR101426568B1 (ko) 2007-09-12 2008-08-25 반도체장치
US12/203,972 US8159058B2 (en) 2007-09-12 2008-09-04 Semiconductor device having wiring substrate stacked on another wiring substrate
US13/409,865 US8698299B2 (en) 2007-09-12 2012-03-01 Semiconductor device with wiring substrate including lower conductive pads and testing conductive pads
US14/081,588 US8766425B2 (en) 2007-09-12 2013-11-15 Semiconductor device
US14/281,956 US9330942B2 (en) 2007-09-12 2014-05-20 Semiconductor device with wiring substrate including conductive pads and testing conductive pads

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TW200919700A (en) 2009-05-01
US20120153282A1 (en) 2012-06-21
US9330942B2 (en) 2016-05-03
US8766425B2 (en) 2014-07-01
US8159058B2 (en) 2012-04-17
TW201523836A (zh) 2015-06-16
KR20090027573A (ko) 2009-03-17
TWI529908B (zh) 2016-04-11
KR101426568B1 (ko) 2014-08-05
US8698299B2 (en) 2014-04-15
US20140252357A1 (en) 2014-09-11
US20140070214A1 (en) 2014-03-13
CN102867821A (zh) 2013-01-09
TWI481007B (zh) 2015-04-11
CN102867821B (zh) 2015-05-13
JP2009070965A (ja) 2009-04-02
CN101388389A (zh) 2009-03-18

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