JP4473807B2 - 積層半導体装置及び積層半導体装置の下層モジュール - Google Patents
積層半導体装置及び積層半導体装置の下層モジュール Download PDFInfo
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- JP4473807B2 JP4473807B2 JP2005312332A JP2005312332A JP4473807B2 JP 4473807 B2 JP4473807 B2 JP 4473807B2 JP 2005312332 A JP2005312332 A JP 2005312332A JP 2005312332 A JP2005312332 A JP 2005312332A JP 4473807 B2 JP4473807 B2 JP 4473807B2
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Description
図1は本発明の第1の実施形態に係る積層半導体装置用の下層モジュールの断面構成を示している。図1において、端子、電極及び配線等の個数及び形状については省略又は図示しやすい個数及び形状等としている。また、以下のすべての図において同様の省略等を行っている。
図3は第1の実施形態の第1変形例に係る下層モジュールの断面構成を示している。図3において図1と同一の構成要素には同一の符号を附すことにより説明を省略する。図3に示すように本変形例の下層モジュールは、第1の半導体チップ21の第1のチップ端子22と、第1の基板11の第1のチップ接続端子13とをワイヤリード24により接続している。
図4は第1の実施形態の第2変形例に係る下層モジュールの断面構成を示している。図4において図1と同一の構成要素には同一の符号を附すことにより説明を省略する。図4に示すように本変形例の下層モジュールは、2個の第1の半導体チップ21が隣り合わせに第1の基板11の上に保持されている。例えば、第1の半導体チップ21として、デジタルシグナルプロセッサ(DSP)チップ21Aと電源チップ21Bとが保持されている。また、CPUチップと不揮発メモリチップとの組み合わせ等、他の複数のチップの組み合わせとしてもよい。
図5は第1の実施形態の第3変形例に係る下層モジュールの断面構成を示している。図5において図1と同一の構成要素には同一の符号を附すことにより説明を省略する。図5に示すように本変形例の下層モジュールは、複数の第1の半導体チップ21が積層されて第1の基板11の上に保持されている。例えば、本変形例の第1の半導体チップ21は、DSPチップ21Cと半導体メモリチップ21Dとが積層されており、DSPチップ21Cはフリップチップ方式により実装され、半導体メモリチップ21Dはワイヤボンディング方式により実装されている。
図6は第1の実施形態の第4変形例に係る下層モジュールの断面構成を示している。図6において図1と同一の構成要素には同一の符号を附すことにより説明を省略する。図6に示すように本変形例の下層モジュールは、上層モジュール接続端子14と接続された表面配線31が設けられておらず、貫通導体34と非貫通導体33とが上層モジュール接続端子14に直接接続されており、第1のチップ接続端子13と上層モジュール接続端子14とは、非貫通導体33及び埋め込み配線32を介在させて電気的に接続されている。従って、チップ保持面12の第1の半導体チップ21保持領域よりも外側の部分においては、表面配線31を設ける必要がなく、配線パターンの設計の自由度を大幅に向上させることができる。また、貫通導体34と非貫通導体33とが、上層モジュール接続端子14の直下に設けられている。上層モジュール接続端子14直下の領域は、通常空きスペースとなっているので、このように配線領域として活用することにより、配線スペースを確保することが可能となる。
以下に、本発明の第2の実施形態について図面を参照して説明する。図8は本発明の第2の実施形態に係る積層半導体装置の断面構成を示している。図8において図1と同一の構成要素には同一の符号を附すことにより説明を省略する。本実施形態の積層半導体装置は、下層モジュール10の上に上層モジュール60が積層されて形成されている。本実施形態において下層モジュール10は、第1の実施形態の第1変形例に係る下層モジュールと同一である。上層モジュール60は、第2の基板61と、第2の基板61の上に保持された第2の半導体チップ71とにより構成されている。
図9に示すように方形状の第2の半導体チップ71の主面側の中央部には、集積回路形成領域(図示せず)が設けられ、集積回路形成領域を囲むように複数の第2のチップ端子72が形成されている。なお、第2のチップ端子は集積回路形成領域内に配置されていてもよい。
以下に、第2の実施形態の一変形例について図面を参照して説明する。図10は本変形例に係る積層半導体装置の断面構成を示している。図10において図8と同一の構成要素には同一の符号を附すことにより説明を省略する。本変形例においては上層モジュール60は、第2の基板61と、第2の基板61の上に保持された半導体チップ71A及び半導体チップ71Bとにより構成されている。
11 第1の基板
12 チップ保持面
13 第1のチップ接続端子
13C バンプ接続端子
13D ワイヤ接続端子
14 上層モジュール接続端子
15 外部基板接続端子
16 突起電極
18 絶縁膜(ソルダレジスト)
21 第1の半導体チップ
21A DSPチップ
21B 電源チップ
21C DSPチップ
21D 半導体メモリチップ
22 第1のチップ端子
23 突起電極
24 ワイヤリード
31 表面配線
32 埋め込み配線
33 非貫通導体
34 貫通導体
41 導電性接着材
42 アンダーフィル樹脂
43 保護樹脂
45 保護樹脂
60 上層モジュール
61 第2の基板
62 第2のチップ保持面
63 第2のチップ接続端子
63A バンプ端子
63B ワイヤ端子
64 下層モジュール接続端子
71 第2の半導体チップ
72 第2のチップ端子
73 突起電極
74 ワイヤリード
81 表面配線
82 貫通導体
91 導電性接続部材
Claims (10)
- 複数の第1のチップ端子を有する第1の半導体チップと、
前記第1の半導体チップの平面寸法よりも大きい第1のチップ保持面を有し、前記第1のチップ保持面の上に前記第1の半導体チップを保持した第1の基板とを備え、
前記第1の基板は、
前記第1のチップ保持面の上に設けられ、前記各第1のチップ端子と電気的に接続された複数の第1のチップ接続端子と、
前記第1のチップ保持面の上における前記第1の半導体チップの保持領域の外側部分に設けられた複数の上層モジュール接続端子と、
前記第1のチップ保持面と反対側の面の上に設けられた複数の外部基板接続端子と、
前記第1の基板に埋め込まれた埋め込み配線と、
前記第1の基板を貫通しないように形成された第1非貫通導体及び第2非貫通導体と、
前記第1の基板を貫通する貫通導体とを有し、
前記各上層モジュール接続端子は、前記第1のチップ接続端子と対応する前記外部基板接続端子との間にそれぞれ電気的に接続され、
前記第1のチップ接続端子と前記埋め込み配線とは、前記第1非貫通導体を介して電気的に接続され、
前記埋め込み配線と前記上層モジュール接続端子とは、前記第2非貫通導体を介して電気的に接続され、
前記上層モジュール接続端子と前記外部接続端子とは、前記貫通導体を介して接続され、
前記各第1のチップ接続端子は、前記外部基板接続端子とそれぞれ電気的に接続されていることを特徴とする積層半導体装置の下層モジュール。 - 前記各外部基板接続端子には、外部基板と接続可能な突起電極が設けられていることを特徴とする請求項1に記載の積層半導体装置の下層モジュール。
- 前記第2非貫通導体及び貫通導体は、前記上層モジュール接続端子の下側に設けられていることを特徴とする請求項1又は2に記載の積層半導体装置の下層モジュール。
- 前記第2非貫通導体及び貫通導体は、前記上層モジュール接続端子の下面における平面的に最も離れた2つの領域の互いに異なる側とそれぞれ接していることを特徴とする請求項3に記載の積層半導体装置の下層モジュール。
- 複数の第1のチップ端子を有する第1の半導体チップと、前記第1の半導体チップの平面寸法よりも大きい第1のチップ保持面を有し、前記第1のチップ保持面の上に前記第1の半導体チップを保持した第1の基板とを含む下層モジュールと、
複数の第2のチップ端子を有する第2の半導体チップと、前記第2の半導体チップの平面寸法よりも大きい第2のチップ保持面を有し、前記第2のチップ保持面の上に前記第2の半導体チップを保持した第2の基板とを含む上層モジュールとを備え、
前記第1の基板は、
前記第1のチップ保持面に設けられ、前記各第1のチップ端子と電気的に接続された複数の第1のチップ接続端子と、
前記第1のチップ保持面における前記第1の半導体チップの保持領域の外側部分に設けられた複数の上層モジュール接続端子と、
それぞれが前記第1のチップ保持面と反対側の面に設けられた複数の外部基板接続端子と、
前記第1の基板に埋め込まれた埋め込み配線と、
前記第1の基板を貫通しないように形成された第1非貫通導体及び第2非貫通導体と、
前記第1の基板を貫通する貫通導体とを有し、
前記各上層モジュール接続端子は、前記第1のチップ接続端子と対応する前記外部基板接続端子との間にそれぞれ電気的に接続され、
前記第1のチップ接続端子と前記埋め込み配線とは、前記第1非貫通導体を介して電気的に接続され、
前記埋め込み配線と前記上層モジュール接続配線とは、前記第2非貫通導体を介して電気的に接続され、
前記上層モジュール接続端子と前記外部接続端子とは、前記貫通導体を介して接続され、
前記各第1のチップ接続端子は、前記外部基板接続端子とそれぞれ電気的に接続され、
前記第2の基板は、
前記第2のチップ保持面に設けられ、前記複数の第2のチップ端子のいずれかと電気的に接続された複数の第2のチップ接続端子と、
前記第2のチップ保持面と反対側の面に設けられ、前記複数の第2のチップ接続端子のいずれかと電気的に接続された複数の下層モジュール接続端子を有し、
前記下層モジュールと前記上層モジュールとは、前記第1のチップ保持面と、前記第2のチップ保持面と反対側の面とを対向させて積層され、
前記各下層モジュール接続端子は、前記複数の上層モジュール接続端子のいずれかと電気的に接続されていることを特徴とする積層半導体装置。 - 前記各第2のチップ端子は、対応する前記第2のチップ接続端子とフリップチップ方式、ワイヤボンディング方式又はテープオートメーテッドボンディング方式によりそれぞれ電気的に接続されていることを特徴とする請求項5に記載の積層型半導体装置。
- 前記第2の半導体チップは、前記第2のチップ保持面の上に複数保持されていることを特徴とする請求項5又は6に記載の積層半導体装置。
- 前記複数の第2の半導体チップは、2個の前記第2の半導体チップが前記第2のチップ端子が設けられた面と反対側の面を互いに対向させて積層された積層チップとして前記第2のチップ保持面に保持されており、
前記2個の第2の半導体チップの一方の前記各第2のチップ端子は、対応する前記第2のチップ接続端子とフリップチップ方式によりそれぞれ電気的に接続されており、
前記2個の第2の半導体チップの他方の前記各第2のチップ端子は、対応する前記第2のチップ接続端子とワイヤボンディング方式又はテープオートメーテッドボンディング方式によりそれぞれ電気的に接続されていることを特徴とする請求項7に記載の積層半導体装置。 - 前記第2の基板は、ガラスエポキシ樹脂、ポリイミド樹脂、アラミド樹脂又はセラミックからなることを特徴とする請求項5から8のいずれか1項に記載の積層半導体装置。
- 前記第1の基板と前記第2の基板とは、同一の材料からなることを特徴とする請求項9に記載の積層半導体装置。
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2005
- 2005-10-27 JP JP2005312332A patent/JP4473807B2/ja active Active
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2006
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- 2006-07-04 CN CNA2006101007427A patent/CN1956189A/zh active Pending
- 2006-08-10 KR KR1020060075540A patent/KR20070045901A/ko not_active Application Discontinuation
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US20070096291A1 (en) | 2007-05-03 |
CN1956189A (zh) | 2007-05-02 |
JP2007123466A (ja) | 2007-05-17 |
US7498668B2 (en) | 2009-03-03 |
KR20070045901A (ko) | 2007-05-02 |
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